SQ4483EY [VISHAY]
Automotive P-Channel 30 V (D-S) 175 °C MOSFET;
| 型号： | SQ4483EY |
| 厂家： | 
VISHAY |
| 描述： | Automotive P-Channel 30 V (D-S) 175 °C MOSFET |
| 文件： | 总10页 (文件大小：206K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SQ4431EY
Vishay Siliconix
www.vishay.com
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• AEC-Q101 Qualifiedc
- 30
RDS(on) () at VGS = - 10 V
RDS(on) () at VGS = - 4.5 V
0.030
0.052
- 10.8
Single
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
ID (A)
Configuration
S
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
D
P-Channel MOSFET
Top View
ORDERING INFORMATION
Package
SO-8
SQ4431EY-T1-GE3
Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
- 30
V
VGS
20
TC = 25 °C
- 10.8
Continuous Drain Current
ID
T
C = 125 °C
- 6.2
Continuous Source Current (Diode Conduction)
Pulsed Drain Currenta
IS
- 5.4
A
IDM
IAS
- 43.2
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
- 21
L = 0.1 mH
TC = 25 °C
EAS
22
mJ
W
6
Maximum Power Dissipationa
PD
T
C = 125 °C
2
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to + 175
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
RthJA
LIMIT
92
UNIT
Junction-to-Ambient
PCB Mountb
°C/W
Junction-to-Foot (Drain)
RthJF
25
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. When mounted on 1" square PCB (FR-4 material).
S13-1183-Rev. C, 20-May-13
Document Number: 65527
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4431EY
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Static
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS
VGS(th)
IGSS
VGS = 0, ID = - 250 μA
- 30
-
-
V
VDS = VGS, ID = - 250 μA
- 1.5
- 2.0
- 2.5
VDS = 0 V, VGS
=
20 V
-
-
100
- 1
nA
μA
A
VGS = 0 V
VGS = 0 V
VDS = - 30 V
VDS = - 30 V, TJ = 125 °C
VDS = - 30 V, TJ = 175 °C
VDS- 5 V
-
-
-
Zero Gate Voltage Drain Current
On-State Drain Currenta
IDSS
-
- 50
- 150
-
VGS = 0 V
-
-
ID(on)
VGS = - 10 V
- 40
-
V
GS = - 4.5 V
ID = - 5 A
-
-
-
-
-
0.045
0.022
0.027
0.035
25
0.052
0.030
0.032
0.042
-
V
GS = - 10 V
ID = - 6 A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V
VGS = - 10 V
ID = - 6 A, TJ = 125 °C
ID = - 6 A, TJ = 175 °C
Forward Transconductanceb
Dynamicb
gfs
VDS = - 15 V, ID = - 6 A
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Chargec
Gate-Source Chargec
Gate-Drain Chargec
Gate Resistance
Turn-On Delay Timec
Rise Timec
Turn-Off Delay Timec
Fall Timec
Ciss
Coss
Crss
Qg
-
-
1010
243
167
25
1265
VGS = 0 V
VDS = - 15 V, f = 1 MHz
-
-
pF
-
-
-
Qgs
Qgd
Rg
V
GS = - 10 V
VDS = - 15 V, ID = - 7.2 A
f = 1 MHz
-
4
-
nC
-
5
-
1.5
-
3.36
10
5.5
-
td(on)
tr
td(off)
tf
-
12
-
VDD = - 15 V, RL = 15
ID - 1 A, VGEN = - 10 V, Rg = 6
ns
-
33
-
-
15
-
Source-Drain Diode Ratings and Characteristicsb
Pulsed Currenta
ISM
-
-
- 40
-
A
V
Forward Voltage
VSD
IF = - 2.1 A, VGS = 0
- 0.8
- 1.1
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S13-1183-Rev. C, 20-May-13
Document Number: 65527
2
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4431EY
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
30
24
18
12
6
30
24
18
12
6
V
= 10 V thru 5 V
GS
V
= 4 V
GS
T
= 125 °C
C
T
= 25 °C
C
V
= 3 V
6
GS
T
4
= - 55 °C
6
C
0
0
0
0
0
2
V
4
8
10
15
30
0
2
V
8
10
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
DS
GS
Output Characteristics
Transfer Characteristics
25
20
15
10
5
0.15
0.12
0.09
0.06
0.03
0.00
TC = - 55 °C
TC = 125 °C
TC = 25 °C
VGS = 4.5 V
VGS = 10 V
0
3
6
9
12
0
6
12
18
24
30
ID - Drain Current (A)
ID - Drain Current (A)
Transconductance
On-Resistance vs. Drain Current
2000
1500
1000
500
0
10
8
I
= 7.2 A
D
V
= 15 V
DS
6
C
iss
4
C
oss
2
C
rss
0
5
10
15
20
25
0
5
10
15
20
25
VDS - Drain-to-Source Voltage (V)
Qg - Total Gate Charge (nC)
Capacitance
Gate Charge
S13-1183-Rev. C, 20-May-13
Document Number: 65527
3
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4431EY
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
- 30
- 32
- 34
- 36
- 38
- 40
1.8
1.5
1.2
0.9
0.6
I
= 1 mA
I = 7 A
D
D
V
= 10 V
GS
V
= 4.5 V
GS
- 50 - 25
0
25
50
75 100 125 150 175
- 50 - 25
0
25
50
75 100 125 150 175
T
- Junction Temperature (°C)
T
- Junction Temperature (°C)
J
J
On-Resistance vs. Junction Temperature
On-Resistance vs. Junction Temperature
100
10
0.25
0.20
0.15
0.10
0.05
0.00
T
= 150 °C
J
1
T
= 25 °C
J
0.1
T
= 150 °C
0.01
J
T
= 25 °C
8
J
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
10
V
- Source-to-Drain Voltage (V)
V
- Gate-to-Source Voltage (V)
SD
GS
Source Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.1
0.8
0.5
I
= 250 μA
D
I
= 1 mA
D
0.2
- 0.1
- 0.4
- 50 - 25
0
25
50
75 100 125 150 175
T
- Temperature (°C)
J
Threshold Voltage
S13-1183-Rev. C, 20-May-13
Document Number: 65527
4
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4431EY
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
I
Limited
DM
100
10
1
Limited by
R
DS(on)
*
1 ms
10 ms
100 ms
1 s
10 s, DC
0.1
T
= 25 °C
C
Single Pulse
BVDSS Limited
0.01
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V
GS
minimum V at which R is specified
GS
DS(on)
Safe Operating Area
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
1
1. Duty Cycle, D =
t
0.02
2
2. Per Unit Base = R
= 92 °C/W
thJA
(t)
3. T - T = P
JM
Z
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
S13-1183-Rev. C, 20-May-13
Document Number: 65527
5
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SQ4431EY
Vishay Siliconix
www.vishay.com
THERMAL RATINGS (TA = 25 °C, unless otherwise noted)
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot
Note
•
The characteristics shown in the two graphs
- Normalized Transient Thermal Impedance Junction-to-Ambient (25 °C)
- Normalized Transient Thermal Impedance Junction-to-Foot (25 °C)
are given for general guidelines only to enable the user to get a “ball park” indication of part capabilities. The data are extracted from single
pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part
mounted on printed circuit board - FR4, size 1" x 1" x 0.062", double sided with 2 oz. copper, 100 % on both sides. The part capabilities
can widely vary depending on actual application parameters and operating conditions.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65527.
S13-1183-Rev. C, 20-May-13
Document Number: 65527
6
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ordering Information
www.vishay.com
Vishay Siliconix
SO-8
Ordering codes for the SQ rugged series power MOSFETs in the SO-8 package:
DATASHEET PART NUMBER
SQ4005EY
SQ4050EY
SQ4182EY
SQ4184EY
SQ4282EY
SQ4284EY
SQ4401EY
SQ4410EY
SQ4425EY
SQ4431EY
SQ4435EY
SQ4470EY
SQ4483BEEY
SQ4483EY
SQ4532AEY
SQ4840EY
SQ4850EY
SQ4917EY
SQ4920EY
SQ4937EY
SQ4940AEY
SQ4946AEY
SQ4949EY
SQ4961EY
SQ9407EY
SQ9945BEY
OLD ORDERING CODE a
-
NEW ORDERING CODE
SQ4005EY-T1_GE3
SQ4050EY-T1_GE3
SQ4182EY-T1_GE3
SQ4184EY-T1_GE3
SQ4282EY-T1_GE3
SQ4284EY-T1_GE3
SQ4401EY-T1_GE3
SQ4410EY-T1_GE3
SQ4425EY-T1_GE3
SQ4431EY-T1_GE3
SQ4435EY-T1_GE3
SQ4470EY-T1_GE3
SQ4483BEEY-T1_GE3
SQ4483EY-T1_GE3
SQ4532AEY-T1_GE3
SQ4840EY-T1_GE3
SQ4850EY-T1_GE3
SQ4917EY-T1_GE3
SQ4920EY-T1_GE3
SQ4937EY-T1_GE3
SQ4940AEY-T1_GE3
SQ4946AEY-T1_GE3
SQ4949EY-T1_GE3
SQ4961EY-T1_GE3
SQ9407EY-T1_GE3
SQ9945BEY-T1_GE3
SQ4050EY-T1-GE3
SQ4182EY-T1-GE3
SQ4184EY-T1-GE3
SQ4282EY-T1-GE3
SQ4284EY-T1-GE3
SQ4401EY-T1-GE3
SQ4410EY-T1-GE3
SQ4425EY-T1-GE3
SQ4431EY-T1-GE3
SQ4435EY-T1-GE3
SQ4470EY-T1-GE3
SQ4483BEEY-T1-GE3
-
-
SQ4840EY-T1-GE3
SQ4850EY-T1-GE3
SQ4917EY-T1-GE3
SQ4920EY-T1-GE3
SQ4937EY-T1-GE3
SQ4940AEY-T1-GE3
SQ4946AEY-T1-GE3
SQ4949EY-T1-GE3
SQ4961EY-T1-GE3
SQ9407EY-T1-GE3
SQ9945BEY-T1-GE3
Note
a. Old ordering code is obsolete and no longer valid for new orders
Revision: 21-Oct-15
Document Number: 66624
1
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW): 8-LEAD
JEDEC Part Number: MS-012
8
6
7
2
5
4
E
H
1
3
S
h x 45
D
C
0.25 mm (Gage Plane)
A
All Leads
0.101 mm
q
e
B
A
1
L
0.004"
MILLIMETERS
Max
INCHES
DIM
A
Min
Min
Max
1.35
0.10
0.35
0.19
4.80
3.80
1.75
0.20
0.51
0.25
5.00
4.00
0.053
0.004
0.014
0.0075
0.189
0.150
0.069
0.008
0.020
0.010
0.196
0.157
A1
B
C
D
E
e
1.27 BSC
0.050 BSC
H
h
5.80
0.25
0.50
0°
6.20
0.50
0.93
8°
0.228
0.010
0.020
0°
0.244
0.020
0.037
8°
L
q
S
0.44
0.64
0.018
0.026
ECN: C-06527-Rev. I, 11-Sep-06
DWG: 5498
Document Number: 71192
11-Sep-06
www.vishay.com
1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-8
0.172
(4.369)
0.028
(0.711)
0.022
0.050
(0.559)
(1.270)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
www.vishay.com
22
Document Number: 72606
Revision: 21-Jan-08
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
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or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Revision: 13-Jun-16
Document Number: 91000
1
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