SMF78A/G2 [VISHAY]
Trans Voltage Suppressor Diode, 1000W, Unidirectional, 1 Element, Silicon, DO-219AA, PLASTIC, SMF, 2 PIN;
| 型号： | SMF78A/G2 |
| 厂家： | 
VISHAY |
| 描述： | Trans Voltage Suppressor Diode, 1000W, Unidirectional, 1 Element, Silicon, DO-219AA, PLASTIC, SMF, 2 PIN 局域网 光电二极管 |
| 文件： | 总3页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMF5.0A thru SMF188A
New Product
Vishay Semiconductors
formerly General Semiconductor
Surface Mount TransZorb®
Transient Voltage Suppressors
Stand-off Voltage 5.0 to 188V
Peak Pulse Power
1000W (8/20ms pulse)
200W (10/1000ms pulse)
DO-219 (SMF)
Cathode Band
Top View
Mounting Pad Layout
1.2
1.6
1.8 ± 0.1
1.0 ± 0.2
1.2
Dimensions in
millimeters
2.8 ± 0.1
0.60 ± 0.25
3.7 ± 0.2
5°
0.98 ± 0.1
5°
0.05 - 0.30
Z
Detail Z
enlarged
Features
• For surface mounted applications.
• Low-profile package
0.00 – 0.10
• Optimized for LAN protection applications
• Ideal for ESD protection of data lines in accordance
with IEC 1000-4-2 (IEC801-2)
Mechanical Data
Case: Low-profile plastic case
Terminals: Solder plated, solderable per
MIL-STD-750, Method 2026
• Ideal for EFT protection of data lines in accor-
dance with IEC 1000-4-4 (IEC801-4)
• Glass passivated junction
• Low incremental surge resistance, excellent
clamping capability
• 200W peak pulse power capability with a 10/1000µs
waveform, repetition rate (duty cycle): 0.01%
(150W above 78V)
• Very fast response time
• High temperature soldering guaranteed:
250°C/10 seconds at terminals
Polarity: The band denotes the cathode, which is
positive with respect to the anode under normal
TVS operation
Mounting Position: Any
Weight: approx. 0.01g
Packaging codes-options:
G1-10K per 13” reel (8mm tape), 50K/box
G2-3K per 7” reel (8mm tape), 30K/box
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
Value
Unit
Peak pulse power dissipation with a 10/1000µs waveform(1)
8/20µs waveform
200
1000
PPPM
W
Peak pulse current with a 10/1000µs waveform(1)
IPPM
See Next Table
20
A
Peak forward surge current 8.3ms single half sine-wave
uni-directional only
IFSM
A
Operating junction and storage temperature range
TJ, TSTG
–55 to +150
°C
Note: (1) Non-repetitive current pulse and derated above TA = 25°
Rating is 150W (10/1000µs pulse) above 78V
Document Number 88433
12-Sep-02
www.vishay.com
1
SMF5.0A thru SMF188A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. VF = 3.5V at IF = 12A (uni-directional only)
Breakdown
Voltage at I
Maximum
Reverse Leakage Peak Pulse Surge
at V Current I
Maximum
Maximum
Clamping
Device
Marking
Code
Test
Current
I (mA)
T
Stand-off
Voltage
T
V
(V)
Voltage at I
(BR)
WM
PPM
PPM
Device Type
SMF5.0A
SMF6.0A
SMF6.5A
SMF7.0A
SMF7.5A
SMF8.0A
SMF8.5A
SMF9.0A
SMF10A
SMF11A
SMF12A
SMF13A
SMF14A
SMF15A
SMF16A
SMF17A
SMF18A
SMF20A
SMF22A
SMF24A
SMF26A
SMF28A
SMF30A
SMF33A
SMF36A
SMF40A
SMF43A
SMF45A
SMF48A
SMF51A
Min(1)
6.40
6.67
7.22
7.78
8.33
8.89
9.44
10.0
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
50.0
53.3
56.7
V
WM
(V)
I (µA)
(A) (2,3)
16.3
14.6
13.4
12.5
11.6
11.0
10.4
9.7
V (V)
C
D
AE
AG
AK
AM
AP
AR
AT
10
10
5.0
400
400
250
100
50
9.2
6.0
6.5
7.0
7.5
8.0
8.5
9.0
10
11
12
13
14
15
16
17
18
20
22
24
26
28
30
33
36
40
43
45
48
51
10.3
11.2
12.0
12.9
13.6
14.4
15.4
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
72.7
77.4
82.4
10
10
1.0
1.0
1.0
1.0
1.0
1'0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
25
10
AV
AX
AZ
BE
BG
BK
BM
BP
BR
BT
BV
BX
BZ
CE
CG
CK
CM
CP
CR
CT
CV
CX
CZ
5.0
2.5
2.5
2.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
8.8
8.2
7.5
7.0
6.5
6.1
5.8
5.4
5.1
4.6
4.2
3.9
3.6
3.3
3.1
2.8
2.6
2.3
2.2
2.1
1.9
1.8
Notes: (1) V(BR) measured after IT applied for 300µs square wave pulse or equivalent
(2) Surge current waveform: 10/1000µs
(3) SMF78A and below can withstand higher currents (to 200W for10/1000µs pulse), but VC must be increased by approximately 5% (Ipp = 200W/VC)
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
www.vishay.com
2
Document Number 88433
12-Sep-02
SMF5.0A thru SMF188A
Vishay Semiconductors
formerly General Semiconductor
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified. VF = 3.5V at IF = 12A (uni-directional only)
Breakdown
Voltage
Maximum
Reverse Leakage Peak Pulse Surge
at V Current I
Maximum
Maximum
Clamping
Device
Marking
Code
Test
Current
Stand-off
Voltage
V
(BR)
(V)
Voltage at I
WM
PPM
PPM
Device Type
SMF54A
SMF58A
SMF60A
SMF64A
SMF70A
SMF75A
SMF78A
SMF85A
SMF90A
SMF100A
SMF110A
SMF120A
SMF130A
SMF150A
SMF160A
SMF170A
SMF188A
(Min)(1)
60.0
64.4
66.7
71.1
77.8
83.3
86.7
94.4
100
at I (mA)
V
WM
(V)
I (µA)
(A) (2,3)
1.7
1.6
1.5
1.5
1.3
1.2
1.2
1.1
1.0
0.9
0.8
0.8
0.7
0.6
0.6
0.5
0.5
V (V)
C
T
D
RE
RG
RK
RM
RP
RR
RT
RV
RX
RZ
SE
SG
SK
SM
SP
SR
SS
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
54
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
87.1
93.6
96.8
103
113
121
126
137
146
162
177
193
209
243
259
275
328
58
60
64
70
75
78
85
90
111
100
110
120
130
150
160
170
188
122
133
144
167
178
189
209
Notes: (1) V(BR) measured after IT applied for 300µs square wave pulse or equivalent
(2) Surge current waveform: 10/1000µs
(3) SMF78A and below can withstand higher currents (to 250W for10/1000µs pulse), but VC must be increased by approximately 5% (Ipp = 250W/VC)
(4) All terms and symbols are consistent with ANSI/IEEE C62.35
Document Number 88433
12-Sep-02
www.vishay.com
3
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SMF78CA-T1-LF
Trans Voltage Suppressor Diode, 1000W, 78V V(RWM), Bidirectional, 1 Element, Silicon,
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