SM8S33AHE3_A/I [VISHAY]
Trans Voltage Suppressor Diode, 5200W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB, ROHS COMPLIANT, PLASTIC PACKAGE-1;
| 型号： | SM8S33AHE3_A/I |
| 厂家： | 
VISHAY |
| 描述： | Trans Voltage Suppressor Diode, 5200W, 33V V(RWM), Unidirectional, 1 Element, Silicon, DO-218AB, ROHS COMPLIANT, PLASTIC PACKAGE-1 局域网 光电二极管 |
| 文件： | 总5页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM8S10A thru SM8S43A
Vishay General Semiconductor
www.vishay.com
Surface Mount PAR® Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• TJ = 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
DO-218AB
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
VBR
11.1 V to 52.8 V
TYPICAL APPLICATIONS
VWM
10 V to 43 V
6600 W
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
P
PPM (10 x 1000 μs)
P
PPM (10 x 10 000 μs)
5200 W
PD
8 W
IFSM
700 A
MECHANICAL DATA
Case: DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“X” denotes revision code e.g. A, B, ...)
TJ max.
Polarity
Package
175 °C
Uni-directional
DO-218AB
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity: heatsink is anode
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
PPPM
VALUE
6600
UNIT
with 10/1000 μs waveform
Peak pulse power dissipation
W
with 10/10 000 μs waveform
5200
Power dissipation on infinite heatsink at TC = 25 °C (fig. 1)
Peak pulse current with 10/1000 μs waveform
PD
8.0
W
A
(1)
IPPM
See next table
700
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
IFSM
A
TJ, TSTG
-55 to +175
°C
Note
(1)
Non-repetitive current pulse derated above TA = 25 °C
Revision: 04-Nov-16
Document Number: 88387
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM8S10A thru SM8S43A
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
BREAKDOWN
VOLTAGE
MAXIMUM
REVERSE
LEAKAGE
AT VWM
MAXIMUM REVERSE
LEAKAGE
MAX. PEAK
MAXIMUM
TEST
CURRENT
IT
STAND-OFF
VOLTAGE
VWM
PULSE CURRENT CLAMPING
DEVICE
TYPE
V
BR (V)
AT VWM
AT 10/1000 μs
WAVEFORM
(A)
VOLTAGE
AT IPPM
VC (V)
TJ = 175 °C
I
(mA)
(V)
MIN.
MAX.
ID (μA)
D (μA)
250
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
SM8S10A
SM8S11A
SM8S12A
SM8S13A
SM8S14A
SM8S15A
SM8S16A
SM8S17A
SM8S18A
SM8S20A
SM8S22A
SM8S24A
SM8S26A
SM8S28A
SM8S30A
SM8S33A
SM8S36A
SM8S40A
SM8S43A
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
20.0
22.2
24.4
26.7
28.9
31.1
33.3
36.7
40.0
44.4
47.8
12.3
13.5
14.7
15.9
17.2
18.5
19.7
20.9
22.1
24.5
26.9
29.5
31.9
34.4
36.8
40.6
44.2
49.1
52.8
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
10.0
11.0
12.0
13.0
14.0
15.0
16.0
17.0
18.0
20.0
22.0
24.0
26.0
28.0
30.0
33.0
36.0
40.0
43.0
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
388
363
332
307
284
270
254
239
226
204
186
170
157
145
136
124
114
102
95.1
17.0
18.2
19.9
21.5
23.2
24.4
26.0
27.6
29.2
32.4
35.5
38.9
42.1
45.4
48.4
53.3
58.1
64.5
69.4
Note
•
For all types maximum VF = 1.8 V at IF = 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance, junction to case
RJC
0.90
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
13" diameter plastic tape and reel,
anode towards the sprocket hole
SM8S10AHE3_A/I (1)
2.605 750
I
Note
(1)
AEC-Q101 qualified
Revision: 04-Nov-16
Document Number: 88387
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM8S10A thru SM8S43A
Vishay General Semiconductor
www.vishay.com
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
8.0
6.0
4.0
2.0
0
10 000
1000
50
150
200
0
100
10
100
Pulse Width (ms) - ½ IPP Exponential Waveform
Case Temperature (°C)
Fig. 1 - Power Derating Curve
Fig. 4 - Reverse Power Capability
6000
5000
4000
3000
2000
1000
0
100
10
RθJA
RθJC
1
0.1
0.01
50
75
Case Temperature (°C)
150
175
0.01
0.1
1
10
100
25
100
125
t - Pulse Width (s)
Fig. 2 - Load Dump Power Characteristics
Fig. 5 - Typical Transient Thermal Impedance
(10 ms Exponential Waveform)
150
100
50
100 000
10 000
1000
tr = 10 μs
TJ = 25 °C
Pulse Width (td) is
Defined as the Point
Where the Peak Current
Decays to 50 % of IPPM
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Peak Value
IPPM
Measured at Zero Bias
Half Value - IPP
IPPM
2
Measured at Stand-Off
Voltage VWM
td
0
10
30
40
0
20
t - Time (ms)
10
15
20
25
30
35
40
45
VWM - Reverse Stand-Off Voltage (V)
Fig. 3 - Pulse Waveform
Fig. 6 - Typical Junction Capacitance
Revision: 04-Nov-16
Document Number: 88387
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SM8S10A thru SM8S43A
Vishay General Semiconductor
www.vishay.com
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-218AB
0.628 (16.0)
0.592 (15.0)
0.539 (13.7)
Mounting Pad Layout
0.150 (3.8)
0.126 (3.2)
0.524 (13.3)
0.116 (3.0)
0.093 (2.4)
0.091 (2.3)
0.067 (1.7)
0.413 (10.5) 0.342 (8.7)
0.374 (9.5) 0.327 (8.3)
0.413 (10.5)
0.374 (9.5)
0.116 (3.0)
0.093 (2.4)
0.366 (9.3)
0.343 (8.7)
0.406 (10.3)
0.366 (9.3)
0.343 (8.7)
0.382 (9.7)
Lead 1
0.606 (15.4)
0.583 (14.8)
0.197 (5.0)
0.185 (4.7)
0.138 (3.5)
0.098 (2.5)
0.098 (2.5)
0.059 (1.5)
0.028 (0.7)
0.020 (0.5)
0.016 (0.4) MIN.
Lead 2/Metal Heatsink
Revision: 04-Nov-16
Document Number: 88387
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
Vishay
Disclaimer
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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