SIZ790DT-T1-GE3 [VISHAY]
Dual N-Channel 30 V (D-S) MOSFETs with Schottky Diode; 双N沟道30 V （ DS ）的MOSFET与肖特基二极管
| 型号： | SIZ790DT-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | Dual N-Channel 30 V (D-S) MOSFETs with Schottky Diode |
| 文件： | 总14页 (文件大小：209K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
SiZ790DT
Vishay Siliconix
Dual N-Channel 30 V (D-S) MOSFETs with Schottky Diode
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
Definition
VDS (V)
RDS(on) (Ω)
ID (A) Qg (Typ.)
16a
16a
SkyFET® Monolithic TrenchFET®
Power MOSFETs and Schottky Diode
100 % Rg Tested
0.0093 at VGS = 10 V
0.0130 at VGS = 4.5 V
0.0047 at VGS = 10 V
0.0059 at VGS = 4.5 V
•
Channel-1
Channel-2
30
7.7 nC
•
•
35a
35a
100 % UIS Tested
30
17 nC
• Compliant to RoHS Directive 2002/95/EC
V
/D
IN 1
APPLICATIONS
PowerPAIR® 6 x 3.7
•
System Power
- Notebook
- Server
G
G
/
HS
G1
2
3.73 mm
D1
Pin 1
GHS
1
1
D1
3
•
•
POL
1
VIN
2
VIN
N-Channel 1
MOSFET
VIN
Synchronous Buck
Converter
V
S /D
/
SW
D1
3
1
2
S1/D2
S2
G2
Schottky
Diode
VSW
G
G
/
GLS
GND
LS
S2
6
6.00 mm
2
6
5
GND
N-Channel 2
MOSFET
5
4
4
Ordering Information: SiZ790DT-T1-GE3 (Lead (Pb)-free and Halogen-free)
GND/S
2
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Channel-1
Channel-2
Unit
VDS
30
20
Drain-Source Voltage
Gate-Source Voltage
V
VGS
16a
16a
12.9b, c
10.3b, c
70
16a
3.2b, c
35a
35a
23.4b, c
18.7b, c
100
35a
3.8b, c
30
T
C = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
ID
Continuous Drain Current (TJ = 150 °C)
A
IDM
IS
Pulsed Drain Current (t = 300 µs)
TC = 25 °C
TA = 25 °C
Continuous Source Drain Diode Current
IAS
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
16
L = 0.1 mH
EAS
13
45
mJ
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
27
48
17
31
PD
Maximum Power Dissipation
W
3.9b, c
2.5b, c
4.6b, c
3b, c
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Channel-1
Typ. Max.
Channel-2
Typ. Max.
27
2.6
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
RthJA
Unit
t ≤ 10 s
Steady State
24
32
20
2
°C/W
RthJC
3.5
4.6
Notes:
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/ppg?73257). The PowerPAIR is a leadless package. The end of the lead terminal is exposed copper (not
plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required
to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 67 °C/W for channel-1 and 65 °C/W for channel-2.
Document Number: 67669
S11-0607-Rev. A, 04-Apr-11
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ790DT
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VGS = 0 V, ID = 250 µA
Ch-1
Ch-2
Ch-1
30
30
1
VDS
Drain-Source Breakdown Voltage
V
GS = 0 V, ID = 250 µA
VDS = VGS, ID = 250 µA
DS = VGS, ID = 250 µA
V
2.2
VGS(th)
Gate Threshold Voltage
Gate Source Leakage
V
Ch-2
Ch-1
Ch-2
Ch-1
1.1
2.2
100
100
1
IGSS
VDS = 0 V, VGS
=
20 V
nA
µA
VDS = 30 V, VGS = 0 V
DS = 30 V, VGS = 0 V
V
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
50
200
5
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currentb
V
V
DS = 30 V, VGS = 0 V, TJ = 55 °C
DS = 30 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
140
1400
15
20
A
Ω
S
VDS ≥ 5 V, VGS = 10 V
VGS = 10 V, ID = 15 A
0.0075 0.0093
0.0038 0.0047
0.0105 0.0130
0.0048 0.0059
48
V
GS = 10 V, ID = 20 A
Drain-Source On-State Resistanceb
V
V
GS = 4.5 V, ID = 13 A
GS = 4.5 V, ID = 20 A
VDS = 15 V, ID = 15 A
Forward Transconductanceb
V
DS = 15 V, ID = 20 A
85
Dynamica
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
830
1980
185
455
80
Ciss
Coss
Crss
Input Capacitance
Channel-1
DS = 15 V, VGS = 0 V, f = 1 MHz
V
Output Capacitance
pF
Channel-2
DS = 10 V, VGS = 0 V, f = 1 MHz
V
Reverse Transfer Capacitance
165
VDS = 15 V, VGS = 10 V, ID = 15 A
15.6
24
V
DS = 15 V, VGS = 10 V, ID = 20 A
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
36
7.7
17
2.6
5.7
3
54
12
26
Qg
Total Gate Charge
Channel-1
nC
V
V
DS = 15 V, VGS = 4.5 V, ID = 15 A
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Channel-2
DS = 15 V, VGS = 4.5 V, ID = 20 A
5
0.2
0.2
1
2
f = 1 MHz
Ω
0.9
1.8
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
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Document Number: 67669
S11-0607-Rev. A, 04-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ790DT
Vishay Siliconix
SPECIFICATIONS (T = 25 °C, unless otherwise noted)
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Dynamica
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
10
20
15
15
15
25
7
20
40
30
30
30
50
15
20
10
20
30
20
35
50
15
20
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Channel-1
DD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
V
Channel-2
DD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
V
10
5
ns
Turn-On Delay Time
Rise Time
Channel-1
DD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
10
15
10
17
25
7
V
Channel-2
DD = 15 V, RL = 1.5 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
V
10
Drain-Source Body Diode Characteristics
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
16
35
IS
TC = 25 °C
Continuous Source-Drain Diode Current
A
V
70
Pulse Diode Forward Currenta
Body Diode Voltage
ISM
100
1.2
IS = 10 A, VGS = 0 V
0.8
VSD
I
S = 2 A, VGS = 0 V
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
0.38
15
20
6
0.48
30
trr
Qrr
ta
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
ns
40
Channel-1
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
12
nC
15
9
32
Channel-2
IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C
10.5
6
ns
tb
Reverse Recovery Rise Time
9.5
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 67669
S11-0607-Rev. A, 04-Apr-11
www.vishay.com
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ790DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
70
60
50
40
30
20
10
0
20
16
12
8
VGS = 10 V thru 4 V
TC = 25 °C
VGS = 3 V
TC = 125 °C
4
TC = - 55 °C
2.5 3.0
0
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
1.5
2.0
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.014
0.012
0.010
0.008
0.006
0.004
1200
1000
800
600
400
200
0
Ciss
VGS = 4.5 V
VGS = 10 V
Coss
Crss
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
Capacitance
On-Resistance vs. Drain Current
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
VGS = 10 V
ID = 15 A
ID = 15.2 A
VDS = 7.5 V
8
6
4
2
0
VGS = 4.5 V
VDS = 15 V
VDS = 24 V
0
3
6
9
12
15
18
- 50 - 25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
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Document Number: 67669
S11-0607-Rev. A, 04-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ790DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.030
0.025
0.020
0.015
0.010
0.005
0.000
100
10
1
ID = 15 A
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
50
40
30
20
10
0
2.0
1.8
1.6
1.4
1.2
1.0
0.8
ID = 250 μA
0.001
0.01
0.1
1
10
100
1000
- 50 - 25
0
25
50
75
100 125 150
Time (s)
TJ - Temperature (°C)
Single Pulse Power
Threshold Voltage
1000
100
10
Limited by RDS(on)
*
100 μs
1 ms
1
10 ms
100 ms
1 s
10 s
DC
TA = 25 °C
Single Pulse
0.1
BVDSS Limited
10
0.01
0.1
1
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 67669
S11-0607-Rev. A, 04-Apr-11
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ790DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
40
30
20
10
0
30
25
20
15
10
5
Package Limited
0
0
25
50
75
100
125
150
25
50
75
100
125
150
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
6
Document Number: 67669
S11-0607-Rev. A, 04-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ790DT
Vishay Siliconix
CHANNEL-1 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
P
0.1
0.1
DM
t
0.05
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 67 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Document Number: 67669
S11-0607-Rev. A, 04-Apr-11
www.vishay.com
7
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ790DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
20
16
12
8
100
80
60
40
20
0
VGS = 10 V thru 4 V
VGS = 3 V
TC = 25 °C
TC = 125 °C
4
TC = - 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0.0
0.5
1.0
1.5
2.0
100
40
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
Output Characteristics
2500
2000
1500
1000
500
0.0060
0.0055
0.0050
0.0045
0.0040
0.0035
0.0030
Ciss
VGS = 4.5 V
VGS = 10 V
Coss
Crss
0
0
5
10
15
20
25
30
0
20
40
60
80
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
10
8
1.8
1.6
1.4
1.2
1.0
0.8
0.6
ID = 20 A
VDS = 7.5 V
ID = 20 A
VGS = 10 V
6
VGS = 4.5 V
VDS = 15 V
VDS = 24 V
4
2
0
0
10
20
30
- 50 - 25
0
25
50
75
100 125 150
Qg - Total Gate Charge (nC)
TJ - Junction Temperature (°C)
Gate Charge
On-Resistance vs. Junction Temperature
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Document Number: 67669
S11-0607-Rev. A, 04-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ790DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
1
0.010
0.008
0.006
0.004
0.002
0.000
ID = 20 A
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
TJ = 25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0
2
4
6
8
10
VSD - Source-to-Drain Voltage (V)
VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source
1.E-01
1.E-02
1.E-03
1.E-04
1.E-05
1.E-06
1.E-07
1.E-08
50
40
30
20
10
0
VR = 30 V
VR = 20 V
VR = 10 V
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
1000
TJ - Temperature (°C)
Time (s)
Reverse Current vs. Junction Temperature
Single Pulse Power
1000
Limited by RDS(on)
*
100
10
100 μs
1 ms
10 ms
100 ms
1
1 s
10 s
TA = 25 °C
Single Pulse
0.1
DC
BVDSS Limited
10
0.01
0.01
0.1
1
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area, Junction-to-Ambient
Document Number: 67669
S11-0607-Rev. A, 04-Apr-11
www.vishay.com
9
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ790DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
80
60
40
20
0
50
40
30
20
10
0
Package Limited
25
50
75
100
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
TC - Case Temperature (°C)
Current Derating*
Power, Junction-to-Case
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
www.vishay.com
10
Document Number: 67669
S11-0607-Rev. A, 04-Apr-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
SiZ790DT
Vishay Siliconix
CHANNEL-2 TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
1
Duty Cycle = 0.5
0.2
Notes:
P
0.1
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 65 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
Single Pulse
0.001
4. Surface Mounted
0.01
0.0001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
0.1
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?67669.
Document Number: 67669
S11-0607-Rev. A, 04-Apr-11
www.vishay.com
11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
PowerPAIRTM 6 x 3.7 CASE OUTLINE
A
K2
Pin 4
K2
D
0.10
C
2X
Pin 6
Pin 5
Pin 4
Pin 5
Pin 6
D1
Pin #1 Ident
(Optional)
D1
0.10
C
Pin 1
Pin 2
Pin 3
Pin 3
Pin 2
Pin 1
2X
e
b
BACK SIDE VIEW
b1
0.10
C
C
C
0.08
Z
Z
MILLIMETERS
INCHES
DIM.
A
MIN.
0.70
0.00
0.46
0.20
0.18
3.65
2.41
5.92
2.62
0.87
NOM.
0.75
MAX.
0.80
0.05
0.56
0.38
0.23
3.81
2.65
6.08
2.72
0.97
MIN.
NOM.
0.030
MAX.
0.032
0.002
0.022
0.015
0.009
0.150
0.104
0.239
0.107
0.038
0.028
0.000
0.018
0.008
0.007
0.144
0.095
0.233
0.103
0.034
A1
b
-
-
0.51
0.020
b1
C
0.25
0.010
0.20
0.008
D
3.73
0.147
D1
E
2.53
0.100
6.00
0.236
E1
E2
e
2.67
0.105
0.92
0.036
1.27 BSC
0.45 TYP.
0.66 TYP.
0.60 TYP.
0.43
0.05 BSC
0.018 TYP.
0.026 TYP.
0.024 TYP.
0.017
K
K1
K2
L
0.38
0.48
0.015
0.019
ECN: S-82772-Rev. B, 17-Nov-08
DWG: 5979
Document Number: 69028
17-Nov-08
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PAD Pattern
Vishay Siliconix
RECOMMENDED PAD FOR PowerPAIR™ 6 x 3.7
0.3520
(8.941)
0.0220
(0.559)
0.0190
(0.483)
0, 0.11
0.0170
(0.432)
0.1040
(2.642)
0, 0.03
0.4390
(11.151)
0, 0
0.0220
(0.559)
0, - 0.0645
0.0170
(0.432)
0.0380
(0.965)
- 0.05, - 0.11
0, - 0.11
0.0500
(1.27)
1
Recommended PAD for PowerPAIR 6 x 3.7
Dimensions in inches (mm)
Keep-out 0.3520 (8.94) x 0.4390 (11.151)
Document Number: 65278
Revision: 04-Aug-09
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1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
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1
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