SIRA24DP-T1-GE3 [VISHAY]
Power Field-Effect Transistor,;
| 型号： | SIRA24DP-T1-GE3 |
| 厂家： | 
VISHAY |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SiRA24DP
Vishay Siliconix
www.vishay.com
N-Channel 25 V (D-S) MOSFET
FEATURES
• TrenchFET® Gen IV power MOSFET
PowerPAK® SO-8 Single
D
D
7
8
• Optimized Qg, Qgd, and Qgd/Qgs ratio reduces
switching related power loss
D
6
D
5
• 100 % Rg and UIS tested
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
1
2
S
3
S
S
APPLICATIONS
D
4
G
1
• Synchronous rectification
• High power density DC/DC
Top View
Bottom View
PRODUCT SUMMARY
VDS (V)
RDS(on) max. () at VGS = 10 V
• Synchronous buck converter
G
25
• Load switching
0.00140
0.00240
17.2
RDS(on) max. () at VGS = 4.5 V
S
Qg typ. (nC)
ID (A)
60 a, g
N-Channel MOSFET
Configuration
Single
ORDERING INFORMATION
Package
Lead (Pb)-free and halogen-free
PowerPAK SO-8 Single
SiRA24DP-T1-GE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
25
+20 / -16
60 a
60 a
44.5 b, c
35.6 b, c
150
56.8
4.5 b, c
UNIT
Drain-source voltage
Gate-source voltage
VDS
VGS
V
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Continuous drain current (TJ = 150 °C)
ID
A
Pulsed drain current (t = 100 μs)
IDM
IS
TC = 25 °C
TA = 25 °C
Continuous source-drain diode current
Single pulse avalanche current
Single pulse avalanche energy
IAS
EAS
30
45
62.5
40
L = 0.1 mH
mJ
W
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
Maximum power dissipation
PD
5 b, c
3.2 b, c
-55 to +150
260
Operating junction and storage temperature range
Soldering recommendations (peak temperature) c
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Maximum junction-to-ambient b
SYMBOL
RthJA
RthJC
TYPICAL
20
MAXIMUM
UNIT
t 10 s
Steady state
25
2
°C/W
Maximum junction-to-case (drain)
1.7
Notes
a. Package limited.
b. Surface mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See solder profile (www.vishay.com/doc?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed
and is not required to ensure adequate bottom side solder interconnection.
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under steady state conditions is 70 °C/W.
g. TC = 25 °C.
S16-2084-Rev. A, 10-Oct-16
Document Number: 75453
1
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRA24DP
Vishay Siliconix
www.vishay.com
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-source breakdown voltage
VDS
VDS/TJ
VGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 μA
ID = 10 mA
25
-
-
-
-
V
VDS temperature coefficient
21
mV/°C
VGS(th) temperature coefficient
Gate-source threshold voltage
Gate-source leakage
ID = 250 μA
-
-4.8
-
VDS = VGS , ID = 250 μA
VDS = 0 V, VGS = +20 / -16 V
VDS = 25 V, VGS = 0 V
VDS = 25 V, VGS = 0 V, TJ = 70 °C
VDS 10 V, VGS = 10 V
VGS = 10 V, ID = 15 A
1
-
-
-
-
-
-
2.1
100
1
V
IGSS
nA
-
Zero gate voltage drain current
On-state drain current a
IDSS
ID(on)
RDS(on)
gfs
μA
A
-
15
-
40
-
0.00115 0.00140
0.00195 0.00240
Drain-source on-state resistance a
S
V
GS = 4.5 V, ID = 10 A
-
Forward transconductance a
Dynamic b
VDS = 15 V, ID = 15 A
-
75
-
Input capacitance
Ciss
Coss
Crss
-
-
2650
1015
197
36.5
17.2
7.4
3.3
0.75
12
-
-
Output capacitance
Reverse transfer capacitance
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 10 V, ID = 15 A
VDS = 10 V, VGS = 4.5 V, ID = 15 A
f = 1 MHz
pF
-
-
-
55
26
-
Total gate charge
Qg
-
nC
Gate-source charge
Gate-drain charge
Qgs
Qgd
Rg
-
-
-
Gate resistance
0.2
-
1.35
24
46
36
20
36
84
34
34
Turn-on delay time
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Rise time
-
23
VDD = 10 V, RL = 1 , ID 15 A,
VGEN = 10 V, Rg = 1
Turn-off delay time
-
18
Fall time
-
10
ns
Turn-on delay time
-
18
Rise time
-
42
V
DD = 10 V, RL = 1 , ID 15 A,
VGEN = 4.5 V, Rg = 1
Turn-off delay time
-
17
Fall time
-
17
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
Pulse diode forward current
Body diode voltage
IS
ISM
VSD
trr
TC = 25 °C
-
-
-
-
-
-
-
-
-
56.8
150
1.1
64
40
-
A
IS = 5 A, VGS = 0 V
0.73
32
20
17
15
V
Body diode reverse recovery time
Body diode reverse recovery charge
Reverse recovery fall time
Reverse recovery rise time
ns
nC
Qrr
ta
IF = 10 A, dI/dt = 100 A/μs, TJ = 25 °C
ns
tb
-
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-2084-Rev. A, 10-Oct-16
Document Number: 75453
2
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRA24DP
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
150
120
90
60
30
0
10000
1000
100
150
120
90
60
30
0
10000
1000
100
VGS = 10 V thru 4 V
TC = 25 °C
VGS = 3 V
TC = 125 °C
TC = -55 °C
VGS = 2 V
10
10
0
0.5
1
1.5
2
2.5
0
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
2nd line
VGS - Gate-to-Source Voltage (V)
2nd line
Output Characteristics
Transfer Characteristics
Axis Title
Axis Title
0.0030
0.0024
0.0018
0.0012
0.0006
0
10000
1000
100
3200
2560
1920
1280
640
10000
1000
100
Ciss
VGS = 4.5 V
Coss
VGS = 10 V
Crss
10
0
10
0
20
40
60
80
100
0
5
10
15
20
25
ID - Drain Current (A)
2nd line
VDS - Drain-to-Source Voltage (V)
2nd line
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
Axis Title
Axis Title
10
8
10000
1000
100
1.7
1.5
1.3
1.1
0.9
0.7
10000
1000
100
ID = 15 A
ID = 10 A
VGS = 10 V
6
VGS = 4.5 V
4
VDS = 5 V, 10 V, 15 V
2
0
10
10
0
8
16
24
32
40
-50 -25
0
25
50
75 100 125 150
Qg - Total Gate Charge (nC)
2nd line
TJ - Junction Temperature (°C)
2nd line
Gate Charge
On-Resistance vs. Junction Temperature
S16-2084-Rev. A, 10-Oct-16
Document Number: 75453
3
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRA24DP
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
Axis Title
100
10
10000
1000
100
0.4
0.2
0
10000
TJ = 150 °C
1000
1
TJ = 25 °C
ID = 5 mA
-0.2
-0.4
-0.6
-0.8
0.1
100
ID = 250 μA
0.01
0.001
10
10
0
0.2
0.4
0.6
0.8
1.0
1.2
-50 -25
0
25
50
75 100 125 150
VSD - Source-to-Drain Voltage (V)
2nd line
TJ - Temperature (°C)
2nd line
Source-Drain Diode Forward Voltage
Threshold Voltage
Axis Title
Axis Title
0.010
0.008
0.006
0.004
0.002
0
10000
1000
100
200
160
120
80
10000
1000
100
ID = 15 A
TJ = 125 °C
40
TJ = 25 °C
10
0
10
0
2
4
6
8
10
0.001
0.01
0.1
1
10
VGS - Gate-to-Source Voltage (V)
2nd line
Time (s)
2nd line
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Axis Title
1000
10000
IDM limited
100
10
ID limited
1000
1 ms
Limited by
(1)
RDS(on)
10 ms
1
100 ms
100
1 s
10 s
0.1
TC = 25 °C
Single pulse
BVDSS limited
0.01
10
0.01
0.1
VDS - Drain-to-Source Voltage (V)
> minimum VGS at which RDS(on) is specified
1
10
100
(1)
V
GS
Safe Operating Area, Junction-to-Ambient
S16-2084-Rev. A, 10-Oct-16
Document Number: 75453
4
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRA24DP
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
175
10000
1000
100
140
105
Package limited
70
35
0
10
0
35
70
105
140
175
TC - Case Temperature (°C)
2nd line
Current Derating a
Axis Title
Axis Title
75
60
45
30
15
0
10000
2.5
2.0
1.5
1.0
0.5
0
10000
1000
100
1000
100
10
10
0
25
50
75
100
125
150
0
25
50
75
100
125
150
TC - Case Temperature (°C)
2nd line
TA - Ambient Temperature (°C)
2nd line
Power, Junction-to-Case
Power, Junction-to-Ambient
Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
S16-2084-Rev. A, 10-Oct-16
Document Number: 75453
5
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SiRA24DP
Vishay Siliconix
www.vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Axis Title
1
10000
1000
100
Duty Cycle = 0.5
0.2
Notes:
PDM
0.1
0.1
t1
0.05
t2
1. Duty cycle, D =
t1
t2
2. Per unit base = RthJA = 70 °C/W
0.02
(t)
3. TJM - TA = PDMZthJA
Single pulse
4. Surface mounted
0.01
0.0001
10
1000
0.001
0.01
0.1
1
10 100
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Ambient
Axis Title
1
10000
1000
100
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single pulse
0.1
0.01
0.0001
10
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
2nd line
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?75453.
S16-2084-Rev. A, 10-Oct-16
Document Number: 75453
6
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
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Vishay
Disclaimer
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Revision: 08-Feb-17
Document Number: 91000
1
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