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SIHL640-E3 [VISHAY]

Power MOSFET; 功率MOSFET
SIHL640-E3
型号： SIHL640-E3
厂家： VISHAY    VISHAY
描述：

Power MOSFET
功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
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IRL640, SiHL640  
Vishay Siliconix  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
200  
• Repetitive Avalanche Rated  
• Logic-Level Gate Drive  
Available  
RDS(on) (Ω)  
Qg (Max.) (nC)  
Qgs (nC)  
VGS = 5.0 V  
0.18  
RoHS*  
66  
9.0  
COMPLIANT  
• RDS(on) Specified at VGS = 4 V and 5 V  
• Fast Switching  
Q
gd (nC)  
38  
Configuration  
Single  
• Ease of Paralleling  
• Simple Drive Requirements  
• Lead (Pb)-free Available  
D
TO-220  
DESCRIPTION  
Third generation Power MOSFETs from Vishay provides the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and cost  
effectiveness.  
The TO-220 package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 50 W. The low thermal resistance  
and low package cost of the TO-220 contribute to its wide  
acceptance throughout the industry.  
G
S
D
G
S
N-Channel MOSFET  
ORDERING INFORMATION  
Package  
TO-220  
IRFL640PbF  
SiHL640-E3  
IRFL640  
Lead (Pb)-free  
SnPb  
SiHL640  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
UNIT  
Gate-Source Voltage  
VGS  
10  
V
TC = 25 °C  
TC =100°C  
17  
Continuous Drain Current  
VGS at 5.0 V  
ID  
A
11  
Pulsed Drain Currenta  
IDM  
68  
Linear Derating Factor  
1.0  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
580  
10  
EAR  
13  
125  
mJ  
W
Maximum Power Dissipation  
T
C = 25 °C  
PD  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
5.0  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
300d  
°C  
for 10 s  
6-32 or M3 screw  
10  
lbf · in  
N · m  
Mounting Torque  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 3.0 mH, RG = 25 Ω IAS = 17 A (see fig. 12).  
c. ISD ≤ 17 A, dI/dt ≤ 150 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.  
d. 1.6 mm from case.  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 91305  
S-Pending-Rev. A, 17-Jul-08  
www.vishay.com  
1
WORK-IN-PROGRESS  
IRL640, SiHL640  
Vishay Siliconix  
THERMAL RESISTANCE RATINGS  
PARAMETER  
SYMBOL  
TYP.  
MAX.  
62  
UNIT  
Maximum Junction-to-Ambient  
Case-to-Sink, Flat, Greased Surface  
Maximum Junction-to-Case (Drain)  
RthJA  
RthCS  
RthJC  
-
0.50  
-
-
°C/W  
1.0  
SPECIFICATIONS TJ = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNIT  
Static  
Drain-Source Breakdown Voltage  
VDS Temperature Coefficient  
Gate-Source Threshold Voltage  
Gate-Source Leakage  
VDS  
ΔVDS/TJ  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
Reference to 25 °C, ID = 1 mA  
VDS = VGS, ID = 250 µA  
VGS = ± 10  
200  
-
-
-
V
V/°C  
V
-
1.0  
-
0.27  
-
-
-
-
-
-
-
2.0  
± 100  
25  
nA  
VDS = 200 V, VGS = 0 V  
-
Zero Gate Voltage Drain Current  
Drain-Source On-State Resistance  
IDSS  
µA  
VDS = 160 V, VGS = 0 V, TJ = 125 °C  
-
250  
0.18  
0.27  
-
VGS = 5.0 V  
GS = 4.0 V  
ID = 10 Ab  
ID = 8.5 Ab  
-
RDS(on)  
gfs  
Ω
V
-
Forward Transconductance  
Dynamic  
VDS = 50 V, ID = 10 Ab  
16  
S
VGS = 0 V  
VDS = 25 V  
Input Capacitance  
Ciss  
Coss  
Crss  
-
-
-
1800  
400  
-
-
-
Output Capacitance  
Reverse Transfer Capacitance  
pF  
120  
f = 1.0 MHz, see fig. 5  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Qg  
Qgs  
Qgd  
-
-
-
-
-
-
66  
9.0  
38  
ID = 17 A, VDS = 160 V,  
see fig. 6 and 13b  
VGS = 5.0 V  
nC  
Turn-On Delay Time  
Rise Time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
8.0  
83  
44  
52  
-
-
-
-
V
DD = 100 V, ID = 17 A  
ns  
Turn-Off Delay Time  
Fall Time  
R
G = 4.6 Ω, RD = 5.7 Ω, see fig. 10b  
D
Between lead,  
Internal Drain Inductance  
Internal Source Inductance  
LD  
LS  
-
-
4.5  
7.5  
-
-
6 mm (0.25") from  
package and center of  
die contact  
nH  
G
S
Drain-Source Body Diode Characteristics  
MOSFET symbol  
showing the  
integral reverse  
p - n junction diode  
D
Continuous Source-Drain Diode Current  
IS  
-
-
-
17  
68  
A
G
Pulsed Diode Forward Currenta  
ISM  
-
-
S
TJ = 25 °C, IS = 17 A, VGS = 0 Vb  
2.0  
470  
4.8  
V
Body Diode Voltage  
VSD  
trr  
-
-
-
Body Diode Reverse Recovery Time  
Body Diode Reverse Recovery Charge  
Forward Turn-On Time  
310  
3.2  
ns  
µC  
TJ = 25 °C, IF = 17 A, dI/dt = 100 A/µsb  
Qrr  
ton  
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.  
www.vishay.com  
2
Document Number: 91305  
S-Pending-Rev. A, 17-Jul-08  
IRL640, SiHL640  
Vishay Siliconix  
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted  
Fig. 1 - Typical Output Characteristics, TC = 25 °C  
Fig. 3 - Typical Transfer Characteristics  
Fig. 4 - Normalized On-Resistance vs. Temperature  
Fig. 2 - Typical Output Characteristics, TC = 150 °C  
Document Number: 91305  
S-Pending-Rev. A, 17-Jul-08  
www.vishay.com  
3
IRL640, SiHL640  
Vishay Siliconix  
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage  
Fig. 7 - Typical Source-Drain Diode Forward Voltage  
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage  
Fig. 8 - Maximum Safe Operating Area  
www.vishay.com  
4
Document Number: 91305  
S-Pending-Rev. A, 17-Jul-08  
IRL640, SiHL640  
Vishay Siliconix  
RD  
VDS  
VGS  
D.U.T.  
RG  
+
V
-
DD  
5.0 V  
Pulse width ≤ 1 µs  
Duty factor ≤ 0.1 %  
Fig. 10a - Switching Time Test Circuit  
VDS  
90 %  
10 %  
VGS  
td(on) tr  
td(off) tf  
Fig. 9 - Maximum Drain Current vs. Case Temperature  
Fig. 10b - Switching Time Waveforms  
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case  
L
VDS  
VDS  
Vary tp to obtain  
required IAS  
tp  
VDD  
D.U.T  
RG  
+
-
VDD  
VDS  
IAS  
5.0 V  
0.01 Ω  
tp  
IAS  
Fig. 12a - Unclamped Inductive Test Circuit  
Fig. 12b - Unclamped Inductive Waveforms  
Document Number: 91305  
S-Pending-Rev. A, 17-Jul-08  
www.vishay.com  
5
IRL640, SiHL640  
Vishay Siliconix  
Fig. 12c - Maximum Avalanche Energy vs. Drain Current  
Current regulator  
Same type as D.U.T.  
50 kΩ  
QG  
5.0 V  
12 V  
0.2 µF  
0.3 µF  
+
-
QGS  
QGD  
VDS  
D.U.T.  
VG  
VGS  
3 mA  
Charge  
IG  
Current sampling resistors  
Fig. 13b - Gate Charge Test Circuit  
ID  
Fig. 13a - Basic Gate Charge Waveform  
www.vishay.com  
6
Document Number: 91305  
S-Pending-Rev. A, 17-Jul-08  
IRL640, SiHL640  
Vishay Siliconix  
Peak Diode Recovery dV/dt Test Circuit  
+
Circuit layout considerations  
• Low stray inductance  
• Ground plane  
D.U.T  
• Low leakage inductance  
current transformer  
-
+
-
-
+
RG  
• dV/dt controlled by RG  
+
-
• Driver same type as D.U.T.  
• ISD controlled by duty factor "D"  
• D.U.T. - device under test  
VDD  
Driver gate drive  
P.W.  
P.W.  
Period  
Period  
D =  
V
= 10 V*  
GS  
D.U.T. I waveform  
SD  
Reverse  
recovery  
current  
Body diode forward  
current  
dI/dt  
D.U.T. V waveform  
DS  
Diode recovery  
dV/dt  
V
DD  
Re-applied  
voltage  
Body diode  
forward drop  
Inductor current  
I
SD  
Ripple ≤ 5 %  
* VGS = 5 V for logic level devices  
Fig. 14 - For N-Channel  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon  
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and  
reliability data, see http://www.vishay.com/ppg?91305.  
Document Number: 91305  
S-Pending-Rev. A, 17-Jul-08  
www.vishay.com  
7
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

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