SI7455DP [VISHAY]
P-Channel 80-V (D-S) MOSFET;
| 型号： | SI7455DP |
| 厂家： | 
VISHAY |
| 描述： | P-Channel 80-V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：98K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si7455DP
Vishay Siliconix
P-Channel 80-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a
- 28
Available
0.025 at VGS = - 10 V
0.029 at VGS = - 6 V
•
TrenchFET® Power MOSFET
- 80
65 nC
- 28
PowerPAK SO-8
S
S
6.15 mm
5.15 mm
1
S
2
G
S
3
G
4
D
8
D
7
D
6
D
5
D
P-Channel MOSFET
Bottom View
Ordering Information: Si7455DP-T1-E3 (Lead (Pb)-free)
Si7455DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
Limit
- 80
20
Unit
VDS
Drain-Source Voltage
Gate-Source Voltage
V
VGS
- 28a
- 28a
TC = 25 °C
C = 70 °C
T
Continuous Drain Current (TJ = 150 °C)
ID
- 10.5b, c
TA = 25 °C
TA = 70 °C
- 8.4b, c
- 60
- 28a
- 4.3b, c
- 45
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
TA = 25 °C
Continuous Source-Drain Diode Current
IAS
Avalanche Current
L = 0.1 mH
EAS
Single-Pulse Avalanche Energy
101
83.3
53.3
5.2b, c
3.3b, c
mJ
W
TC = 25 °C
TC = 70 °C
TA = 25 °C
TA = 70 °C
PD
Maximum Power Dissipation
TJ, Tstg
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d, e
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, f
Maximum Junction-to-Case (Drain)
Symbol
RthJA
Typical
Maximum
Unit
t ≤ 10 s
Steady State
19
24
°C/W
RthJC
1.2
1.5
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 65 °C/W.
Document Number: 73430
S09-0273-Rev. C, 16-Feb-09
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1
Si7455DP
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = - 250 µA
ID = - 250 µA
Drain-Source Breakdown Voltage
- 80
V
V
DS Temperature Coefficient
- 80
7.3
- 3
mV/°C
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
VDS = VGS, ID = - 250 µA
- 2
- 4
100
- 1
V
IGSS
VDS = 0 V, VGS
=
20 V
nA
VDS = - 80 V, VGS = 0 V
DS = - 80 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = - 10 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
- 10
VGS = - 10 V, ID = - 10.5 A
0.020
0.024
30
0.025
0.029
Drain-Source On-State Resistancea
Ω
S
V
GS = - 6 V, ID = - 9.7 A
Forward Transconductancea
VDS = - 15 V, ID = - 10.5 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
5160
320
220
102
65
VDS = - 40 V, VGS = 0 V, f = 1 MHz
pF
VDS = - 40 V, VGS = - 10 V, ID = - 10.5 A
155
100
Qg
Total Gate Charge
nC
Ω
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
V
DS = - 40 V, VGS = - 6 V, ID = - 10.5 A
f = 1 MHz
22
29
4
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
15
25
75
50
V
DD = - 40 V, RL = 4.76 Ω
ns
ID ≅ - 8.4 A, VGEN = - 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
90
135
100
45
65
Turn-On Delay Time
Rise Time
30
185
70
280
105
100
V
DD = - 40 V, RL = 4.76 Ω
ns
ID ≅ - 8.4 A, VGEN = - 6 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
65
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode
Current
Pulse Diode Forward Currenta
IS
TC = 25 °C
IS = - 8.4 A
- 28
A
ISM
VSD
trr
- 60
- 1.2
90
Body Diode Voltage
- 0.8
60
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
150
45
235
IF = - 8.4 A, dI/dt = 100 A/µs, TJ = 25 °C
ns
tb
15
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73430
S09-0273-Rev. C, 16-Feb-09
Si7455DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
20
16
12
8
V
GS
= 10 V thru 6 V
50
40
30
20
10
0
5 V
T
A
= 125 °C
25 °C
4
4 V
- 55 °C
0
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
- Gate-to-Source Voltage (V)
V
DS
- Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.030
0.025
0.020
0.015
0.010
8000
7000
6000
5000
4000
3000
2000
1000
0
V
GS
= 6 V
C
iss
V
GS
= 10 V
C
oss
C
rss
0
10
20
30
40
50
60
0
10
20
30
40
50
60
70
80
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
2.0
1.7
1.4
1.1
0.8
0.5
10
I
D
= 10.5 A
I
D
= 10.5 A
8
6
4
2
0
V
GS
= 10 V, 6 V
V
= 40 V
DS
V
DS
= 64 V
- 50 - 25
0
25
50
75
100 125 150
0
20
40
60
80
100
120
Q
g
- Total Gate Charge (nC)
T - Junction Temperature (°C)
J
Gate Charge
On-Resistance vs. Junction Temperature
Document Number: 73430
S09-0273-Rev. C, 16-Feb-09
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3
Si7455DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
60
0.05
0.04
0.03
0.02
0.01
0.00
T
A
= 125 °C
T
J
= 150 °C
10
T
A
= 25 °C
T
J
= 25 °C
1
0.0
4
5
6
7
8
9
10
0.2
0.4
0.6
0.8
1.0
1.2
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
3.8
3.5
3.2
2.9
2.6
2.3
2.0
60
50
I
D
= 250 µA
40
30
20
10
0
- 50 - 25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
T
J
- Temperature (°C)
Time (s)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by
R
*
DS(on)
100 µs
10
1
1 ms
10 ms
100 ms
1 s
0.1
0.01
10 s
DC
T
= 25 °C
A
Single Pulse
0.001
0.1
1
10
100
1000
V
- Drain-to-Source Voltage (V)
DS
* V > minimum V at which R
is specified
GS
GS
DS(on)
Safe Operating Area, Junction-to-Ambient
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Document Number: 73430
S09-0273-Rev. C, 16-Feb-09
Si7455DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
100
80
60
40
20
0
40
30
Package Limited
20
10
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
C
- Case Temperature (°C)
Power Derating
Current Derating*
100
10
L x I
A
T
=
A
BV -V
DD
1
0.0001
0.001
0.01
0.1
1
T
A
- Time In Avalanche (s)
Single Pulse Avalanche Capability
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73430
S09-0273-Rev. C, 16-Feb-09
www.vishay.com
5
Si7455DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
t
1
0.02
t
2
t
t
1
1. Duty Cycle, D =
2
2. Per Unit Base = R
= 65 °C/W
thJA
(t)
Single Pulse
0.01
3. T - T = P
JM
Z
A
DM thJA
4. Surface Mounted
-2
-1
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
100
1000
2
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
0.1
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73430.
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Document Number: 73430
S09-0273-Rev. C, 16-Feb-09
Legal Disclaimer Notice
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Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Revision: 13-Jun-16
Document Number: 91000
1
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