SI7390DP-T1 [VISHAY]
N-Channel 30-V (D-S) Fast Switching WFET; N通道30 -V （D -S ）快速开关WFET
| 型号： | SI7390DP-T1 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30-V (D-S) Fast Switching WFET |
| 文件： | 总5页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si7390DP
Vishay Siliconix
®
New Product
N-Channel 30-V (D-S) Fast Switching WFET
FEATURES
PRODUCT SUMMARY
•
Extremely Low Qgd WFET Technology
VDS (V)
rDS(on) (Ω)
ID (A)
15
for Low Switching Losses
Available
0.0095 @ VGS = 10 V
0.0135 @ VGS = 4.5 V
•
•
TrenchFET® Power MOSFET
New Low Thermal Resistance PowerPAK®
Package with Low 1.07-mm Profile
100 % Rg Tested
RoHS*
30
13
COMPLIANT
•
APPLICATIONS
•
High-Side DC/DC Conversion
PowerPAK SO-8
- Notebook
- Server
S
- Workstation
6.15 mm
5.15 mm
1
S
•
Point-of-Load Conversion
2
S
3
G
4
D
D
8
D
7
D
6
D
G
5
Bottom View
S
N-Channel MOSFET
Ordering Information: Si7390DP-T1
Si7390DP-T1—E3 (Lead (Pb)-Free)
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
20
V
VGS
TA = 25°C
TA = 70°C
15
12
9
7
Continuous Drain Current (TJ = 150°C)a
ID
A
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
IDM
IS
50
4.1
5
1.5
1.8
1.1
TA = 25°C
Maximum Power Dissipationa
PD
W
T
A = 70°C
3.2
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b,c
TJ, Tstg
–55 to 150
260
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
Typical
20
Maximum
Unit
t ≤ 10 sec
Steady State
Steady State
25
70
Maximum Junction-to-Ambient (MOSFET)a
Maximum Junction-to-Case (Drain)
53
°C/W
RthJC
2.1
3.2
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Solder Profile ( http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72214
S-51773-Rev. C, 31-Oct-05
www.vishay.com
1
Si7390DP
Vishay Siliconix
New Product
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250 µA
0.8
3.0
100
1
V
VDS = 0 V, VGS
=
20 V
nA
VDS = 30 V, VGS = 0 V
DS = 30 V, VGS = 0 V, TJ = 70°C
VDS ≥ 5 V, VGS = 10 V
IDSS
ID(on)
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
V
5
40
VGS = 10 V, ID = 15 A
0.0075
0.0105
45
0.0095
0.0135
Drain-Source On-State Resistancea
rDS(on)
Ω
V
GS = 4.5 V, ID = 13 A
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
gfs
VDS = 15 V, ID = 15 A
IS = 4.1 A, VGS = 0 V
S
V
VSD
0.7
1.1
15
Total Gate Charge
Qg
Qgs
Qgd
Rg
10
3.5
2.1
0.8
16
7
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
VDS = 15 V, VGS = 4.5 V, ID = 15 A
nC
0.2
1.4
30
12
70
25
60
Ω
td(on)
tr
td(off)
tf
V
DD = 15 V, RL = 15 Ω
ID ≅ 1 A, VGEN = 10 V, RG = 6 Ω
Turn-Off Delay Time
Fall Time
43
14
35
ns
Source-Drain Reverse Recovery Time
Notes
trr
IF = 2.7 A, di/dt = 100 A/µs
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C unless noted
50
40
30
20
10
0
50
40
30
20
10
0
V
= 10 thru 4 V
GS
3 V
T
= 125˚C
C
25˚C
-55˚C
3.0
0.0
0.5
1.0
1.5
2.0
2.5
3.5
0
1
2
3
4
5
V
- Gate-to-Source Voltage (V)
V
- Drain-to-Source Voltage (V)
GS
DS
Output Characteristics
Transfer Characteristics
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2
Document Number: 72214
S-51773-Rev. C, 31-Oct-05
Si7390DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C unless noted
1800
1500
1200
900
600
300
0
0.030
0.024
0.018
0.012
0.006
0.000
C
iss
V
= 4.5 V
= 10 V
GS
C
oss
V
GS
C
rss
0
6
12
18
24
30
0
10
20
30
40
50
V
- Drain-to-Source Voltage (V)
I
D
- Drain Current (A)
DS
On-Resistance vs. Drain Current
Capacitance
6
5
4
3
2
1
0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
= 12.5 A
V
= 10 V
GS
DS
I
D
I = 12.5 A
D
0
3
6
9
12
15
-50
-25
0
25
50
75
100 125 150
Q
g
- Total Gate Charge (nC)
T
J
- Junction Temperature (˚C)
Gate Charge
On-Resistance vs. Junction Temperature
0.040
50
10
0.032
0.024
0.016
0.008
0.000
T = 150˚C
J
I
D
= 12.5 A
1
T = 25˚C
J
0.1
0
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V
- Gate-to-Source Voltage (V)
V
- Source-to-Drain Voltage (V)
GS
SD
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72214
S-51773-Rev. C, 31-Oct-05
www.vishay.com
3
Si7390DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C unless noted
0.6
100
80
0.4
I
D
= 250 A
0.2
-0.0
-0.2
-0.4
-0.6
-0.8
60
40
20
0
-50
-25
0
25
50
75
100 125 150
0.01
0.1
1
10
100
600
Time (sec)
T
J
- Temperature (˚C)
Single Pulse Power
Threshold Voltage
100
Limited by r
10
DS(on)
10 ms
100 ms
1
1 s
10 s
0.1
T
= 25˚C
C
Single Pulse
dc
0.01
0.1
1
10
100
V
- Drain-to-Source Voltage (V)
DS
Safe Operating Area, Junction-to-Case
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 125˚C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
600
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4
Document Number: 72214
S-51773-Rev. C, 31-Oct-05
Si7390DP
Vishay Siliconix
New Product
TYPICAL CHARACTERISTICS 25 °C unless noted
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedance, Junction-to-Case
10
1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72214.
Document Number: 72214
S-51773-Rev. C, 31-Oct-05
www.vishay.com
5
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