SI4890BDY [VISHAY]
N-Channel 30-V (D-S) MOSFET;
| 型号： | SI4890BDY |
| 厂家： | 
VISHAY |
| 描述： | N-Channel 30-V (D-S) MOSFET |
| 文件： | 总7页 (文件大小：93K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4890BDY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
•
Halogen-free According to IEC 61249-2-21
VDS (V)
RDS(on) (Ω)
Qg (Typ.)
I
D (A)a
16
Available
TrenchFET® Power MOSFET
100 % Rg and UIS Tested
0.012 at VGS = 10 V
0.016 at VGS = 4.5 V
•
•
30
10 nC
14
APPLICATIONS
•
Notebook
- System Power
- Adapter Switch
SO-8
•
DC/DC
D
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
G
Top View
S
Ordering Information: Si4890BDY-T1-E3 (Lead (Pb)-free)
Si4890BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
A
Parameter
Symbol
VDS
Limit
30
Unit
Drain-Source Voltage
Gate-Source Voltage
V
VGS
25
T
C = 25 °C
TC = 70 °C
A = 25 °C
16
12.9
Continuous Drain Current (TJ = 150 °C)
ID
10.7b, c
8.6b, c
60
T
TA = 70 °C
A
IDM
IS
Pulsed Drain Current
TC = 25 °C
5.1
2.2b, c
20
Continuous Source-Drain Diode Current
T
A = 25 °C
L = 0.1 mH
C = 25 °C
TC = 70 °C
A = 25 °C
TA = 70 °C
IAS
Single Pulse Avalanche Current
Avalanche Energy
EAS
mJ
W
20
T
5.7
3.6
PD
Maximum Power Dissipation
2.5b, c
1.6b, c
T
TJ, Tstg
Operating Junction and Storage Temperature Range
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
RthJA
RthJF
Typical
40
Maximum
Unit
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
50
22
°C/W
18
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 90 °C/W.
Document Number: 69502
S09-0540-Rev. B, 06-Apr-09
www.vishay.com
1
New Product
Si4890BDY
Vishay Siliconix
SPECIFICATIONS T = 25 °C, unless otherwise noted
J
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
VGS = 0 V, ID = 250 µA
ID = 250 µA
Drain-Source Breakdown Voltage
30
V
V
DS Temperature Coefficient
36
mV/°C
VGS(th) Temperature Coefficient
- 6.2
VDS = VGS , ID = 250 µA
Gate-Source Threshold Voltage
Gate-Source Leakage
1.4
30
2.6
100
1
V
IGSS
VDS = 0 V, VGS
=
25 V
nA
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 5 V, VGS = 10 V
IDSS
ID(on)
RDS(on)
gfs
Zero Gate Voltage Drain Current
On-State Drain Currenta
µA
A
10
VGS = 10 V, ID = 10 A
0.009
0.012
30
0.012
0.016
Drain-Source On-State Resistancea
Forward Transconductancea
Ω
S
VGS = 4.5 V, ID = 8 A
VDS = 15 V, ID = 10 A
Dynamicb
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
1535
255
106
22
V
DS = 15 V, VGS = 0 V, f = 1 MHz
pF
V
DS = 15 V, VGS = 10 V, ID = 10 A
33
15
Qg
Total Gate Charge
10
nC
Qgs
Qgd
Rg
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
VDS = 15 V, VGS = 4.5 V, ID = 10 A
f = 1 MHz
4.3
2.6
0.77
20
1.5
40
20
40
16
22
16
40
16
Ω
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
10
V
DD = 15 V, RL = 1.5 Ω
ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
20
8
ns
Turn-On Delay Time
Rise Time
11
8
V
DD = 15 V, RL = 1.5 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
Turn-Off Delay Time
Fall Time
20
8
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
ISM
VSD
trr
TC = 25 °C
IS = 3 A
5.1
60
A
Pulse Diode Forward Currenta
Body Diode Voltage
0.76
24
1.1
40
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ns
nC
Qrr
ta
18
30
IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C
14
ns
tb
10
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 69502
S09-0540-Rev. B, 06-Apr-09
New Product
Si4890BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
2.0
1.5
1.0
0.5
0
V
GS
= 10 V thru 5 V
4 V
40
30
20
10
0
T
C
= 25 °C
T
C
= 125 °C
3 V
T
J
= - 55 °C
4
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
0.016
0.014
0.012
0.010
0.008
0.006
2000
1600
1200
800
400
0
C
iss
V
V
= 4.5 V
= 10 V
GS
GS
C
oss
C
rss
0
10
20
30
40
50
0
6
12
18
24
30
I
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
D
On-Resistance vs. Drain Current and Gate Voltage
Capacitance
1.8
1.5
1.2
0.9
0.6
10
I
= 10 A
I
= 10 A
D
D
V
= 10 V
DS
V
GS
= 10 V
8
6
4
2
0
V
DS
= 15 V
V
DS
= 20 V
V
GS
= 4.5 V
- 50 - 25
0
25
50
75
100 125 150
0
5
10
15
20
25
T - Junction Temperature (°C)
J
Q - Total Gate Charge (nC)
g
On-Resistance vs. Junction Temperature
Gate Charge
Document Number: 69502
S09-0540-Rev. B, 06-Apr-09
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3
New Product
Si4890BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
0.08
0.06
0.04
0.02
0
100
I
= 10 A
D
10
T
J
= 25 °C
T
J
= 150 °C
1
0.1
0.01
T
= 125 °C
A
T
= 25 °C
A
0.001
0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
5
6
7
8
9
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
0.6
0.3
120
96
72
48
24
0
0
I
= 5 mA
D
- 0.3
- 0.6
- 0.9
- 1.2
I
= 250 mA
D
- 50 - 25
0
25
50
75
100 125 150
0.001
0.01
0.1
1
10
Time (s)
T
J
- Temperature (°C)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
100
Limited by R
*
DS(on)
10
1 ms
10 ms
1
100 ms
1 s
10 s
0.1
DC
T
A
= 25 °C
Single Pulse
0.01
0.1
1
10
100
V
DS
- Drain-to-Source Voltage (V)
* V > minimum V at which R
is specified
DS(on)
GS
GS
Safe Operating Area, Junction-to-Ambient
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Document Number: 69502
S09-0540-Rev. B, 06-Apr-09
New Product
Si4890BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
18
14
11
7
4
0
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
Current Derating*
7.0
5.6
4.2
2.8
1.4
0
1.80
1.44
1.08
0.72
0.36
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
- Case Temperature (°C)
T
A
- Ambient Temperature (°C)
Power, Junction-to-Foot
Power, Junction-to-Ambient
* The power dissipation PD is based on TJ(max) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 69502
S09-0540-Rev. B, 06-Apr-09
www.vishay.com
5
New Product
Si4890BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
P
DM
t
1
0.05
0.02
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 65 °C/W
thJA
(t)
3. T - T = P
Z
JM
A
DM thJA
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
1
10
100
1000
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?69502.
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Document Number: 69502
S09-0540-Rev. B, 06-Apr-09
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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