SI4810DY-T1-E3 [VISHAY]
Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8;
| 型号： | SI4810DY-T1-E3 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 光电二极管 晶体管 |
| 文件： | 总6页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4810DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
0.0135 @ V = 10 V
10
8
GS
30
0.020 @ V = 4.5 V
GS
SCHOTTKY PRODUCT SUMMARY
VSD (V)
Diode Forward Voltage
VDS (V)
IF (A)
30
0.53 V @ 3.0 A
4.0
D
D
D
D
SO-8
S
S
S
G
D
D
D
D
1
2
3
4
8
7
6
5
Ordering Information:
Si4810DY
Si4810DY-T1 (with Tape and Reel)
G
N-Channel MOSFET
Schottky Diode
S
Top View
S
S
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)
A
Parameter
Symbol
Limit
Unit
Drain-Source Voltage (MOSFET)
Reverse Voltage (Schottky)
30
30
V
DS
V
Gate-Source Voltage (MOSFET)
V
GS
"20
T
= 25_C
= 70_C
10
8
A
a, b
Continuous Drain Current (T = 150_C) (MOSFET)
I
J
D
T
A
Pulsed Drain Current (MOSFET)
I
I
50
DM
A
a, b
Continuous Source Current (MOSFET Diode Conduction)
Average Foward Current (Schottky)
I
S
2.3
I
4.0
F
Pulsed Foward Current (Schottky)
50
FM
T
= 25_C
= 70_C
= 25_C
= 70_C
2.5
A
a, b
Maximum Power Dissipation (MOSFET)
T
A
1.6
P
W
D
T
A
2.0
a, b
Maximum Power Dissipation (Schottky)
T
A
1.3
Operating Junction and Storage Temperature Range
T , T
J
-55 to 150
_C
stg
THERMAL RESISTANCE RATINGS
Parameter
Device
Symbol
Typical
Maximum
Unit
MOSFET
Schottky
MOSFET
Schottky
50
60
a
Maximum Junction-to-Ambient (t v 10 sec)
R
thJA
C/W
70
80
a
Maximum Junction-to-Ambient (t = steady state)
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Document Number: 70802
S-31062—Rev. F, 26-May-03
www.vishay.com
2-1
Si4810DY
Vishay Siliconix
MOSFET + SCHOTTKY SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
J
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V
V
= V , I = 250 mA
1
V
GS(th)
DS
GS
D
V
= 0 V, V = "20 V
GS
I
DS
"100
nA
GSS
V
= 30 V, V = 0 V
0.007
1.5
0.100
10
DS
GS
Zero Gate Voltage Drain Current
(MOSFET + Schottky)
V
V
= 30 V, V = 0 V, T = 100_C
I
mA
DS
GS
J
DSS
= 30 V, V = 0 V, T = 125_C
6.5
20
DS
GS
J
a
On-State Drain Current
I
V
DS
w 5 V, V = 10 V
20
A
W
S
V
D(on)
GS
V
= 10 V, I = 10 A
0.0105
0.0155
0.0135
0.020
GS
D
a
Drain-Source On-State Resistance
r
DS(on)
V
= 4.5 V, I = 5 A
D
GS
a
Forward Transconductance
g
fs
V
= 15 V, I = 10 A
28
DS
D
I
S
= 3.0 A, V = 0 V
0.485
0.420
0.53
0.47
GS
a
Schottky Diode Forward Voltage
V
SD
I
S
= 3.0 A, V = 0 V, T = 125_C
GS
J
Dynamicb
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Q
20
8
30
g
Q
Q
V
= 15 V, V = 5 V, I = 10 A
nC
gs
gd
DS
GS
D
7
R
g
0.5
1.0
15
8
1.6
30
15
90
40
70
W
t
d(on)
t
r
V
= 15 V, R = 15 W
L
= 10 V, R = 6 W
GEN G
DD
I
D
^ 1 A, V
Turn-Off Delay Time
Fall Time
t
45
18
36
ns
d(off)
t
f
Source-Drain Reverse Recovery Time
t
rr
I = 3.0 A, di/dt = 100 A/ms
F
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Document Number: 70802
S-31062—Rev. F, 26-May-03
www.vishay.com
2-2
Si4810DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
50
50
40
30
20
10
0
V
GS
= 10 thru 5 V
40
30
20
10
0
4 V
T
= 125_C
C
25_C
3 V
-55_C
0
1
2
3
4
5
0
1
2
3
4
5
V
DS
- Drain-to-Source Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
3500
2800
2100
1400
700
0.05
0.04
0.03
0.02
0.01
0.00
C
(MOSFET)
iss
V
= 4.5 V
GS
C
oss
(MOSFET + Schottky)
V
GS
= 10 V
C
(MOSFET)
10
rss
0
0
10
20
30
40
50
0
5
15
20
25
30
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
10
8
1.6
1.4
1.2
1.0
0.8
0.6
V
= 15 V
= 10 A
V
= 10 V
DS
GS
I
D
I = 10 A
D
6
4
2
0
0
8
16
24
32
40
-50
-25
0
25
50
75
100 125 150
Q
- Total Gate Charge (nC)
T
- Junction Temperature (_C)
g
J
Document Number: 70802
S-31062—Rev. F, 26-May-03
www.vishay.com
2-3
Si4810DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
50
10
0.10
0.08
0.06
0.04
0.02
0.00
T
= 150_C
J
I
D
= 9.0 A
T
= 25_C
J
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
2
4
6
8
10
V
SD
- Source-to-Drain Voltage (V)
V
GS
- Gate-to-Source Voltage (V)
Reverse Current (Schottky)
Single Pulse Power
80
60
40
20
0
30
10
1
30 V
0.1
10 V
0.01
20 V
0.001
0.0001
0
25
50
75
100
125
150
0.01
0.10
1.00
Time (sec)
10.00
T
- Temperature (_C)
J
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
0.02
2. Per Unit Base = R
= 70_C/W
thJA
(t)
3. T
- T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
-4
-3
-2
-1
10
10
10
10
Square Wave Pulse Duration (sec)
1
10
30
Document Number: 70802
S-31062—Rev. F, 26-May-03
www.vishay.com
2-4
Si4810DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Ambient (Schottky)
2
1
Duty Cycle = 0.5
0.2
0.1
Notes:
P
DM
0.1
0.05
0.02
t
1
t
2
t
t
1
2
1. Duty Cycle, D =
2. Per Unit Base = R
= 80_C/W
thJA
(t)
3. T
- T = P
A
Z
JM
DM thJA
4. Surface Mounted
Single Pulse
0.01
-4
-3
-2
-1
10
10
10
10
1
10
30
Square Wave Pulse Duration (sec)
Document Number: 70802
S-31062—Rev. F, 26-May-03
www.vishay.com
2-5
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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