SI4719CY [VISHAY]
Battery Disconnect Switch; 蓄电池断路开关
| 型号： | SI4719CY |
| 厂家： | 
VISHAY |
| 描述： | Battery Disconnect Switch |
| 文件： | 总8页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Si4719CY
Vishay Siliconix
Battery Disconnect Switch
FEATURES
D Solution for Bi-Directional Blocking
D Two Independent Inputs
Bi-Directional Conduction Switch
D Includes Precision Voltage Circuitry
D 6- to 30-V Operation
D Ultra Low Power Consumption in Off State
D Ground Referenced Logic Level Inputs
D Integrated Low rDS(on) MOSFET
D Level-Shifted Gate Drive with Internal MOSFET
(Leakage Current Only)
D Logic Supply Voltage is Not Required
DESCRIPTION
The Si4719CY is two level-shifted p-channel MOSFETs.
Operatingtogether, these MOSFETs can be used as a reverse
blocking switch for battery disconnect applications. It is a
solutionfor multiple battery technology designs or designsthat
require isolation from the power bus during charging.
The Si4719CY is available in a 16-pin SOIC package and is
rated for the commercial temperature range of –25 to 85_C.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
5
9, 10, 11
IN
1
D
1
Logic
and
Gate
Drive
ESD
Level
Shift
12
6
GND
G
1
7, 8
V
GS
S
1
1
Limiter
Half a circuit shown here.
Document Number: 70669
S-59510—Rev. B, 31-Aug-98
www.vishay.com S FaxBack 408-970-5600
2-1
Si4719CY
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
b
Voltage Referenced to GND
a
Power Dissipation (t = 10 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4 W
V , V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 32 V
(t = steady state) . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.5 W
S
D
V
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 30 V
Notes
SD
a.
V
≤ 30 V
SD DC
, V
IN1 IN2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to 15 V
b. Device mounted with all leads soldered to 1” x 1” FR4 with laminated
copper PC board.
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 V
GS
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
RECOMMENDED OPERATING RANGE
V , V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 V to 30 V
Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 to 85_C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –25 to 150_C
S
D
V , V
IN1 IN2
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 V to 13.2 V
I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0 A to 6 A
DS
SPECIFICATIONS
Limits
Tempa
Minb
Typc
Maxb
Unit
W
Parameter
Symbol
Specific Test Conditions
On-Resistance
r
DS
V
S
= 10 V, I = 1 A, V = H
Room
Room
0.028
0.040
1
D
IN
Leakage Current
I
V
DS
= 10 V
DS(off)
I
S
Room
Room
1
GND
mA
(off)
Power Consumption
V = 21 V
S
I
S
1.0
10
GND
(on)
Input Voltage Low
Input Voltage High
Input Current
V
Full
3.3
INL
V
= 10 V and V = 21 V
V
S
S
V
Full
4.5
2.2
INH
INH
I
V
IN
= 5.0 V
Room
Room
Room
Room
Room
Room
Room
Room
25
50
10
2
mA
Turn-On Delay
IN
t
2.9
ON(IN)
V
S
= 10 V, R = 5 W, Test Circuit 1
L
to D or S
Turn-Off Delay
t
1.15
1.15
0,73
24
OFF(IN)
ms
d
Break-Before-Make
t
BBM
Rise Time
t
t
1.4
50
RISE
FALL
Fall Time
ns
V
Voltage Across Pin 6 and 7
Forward Diode
V
V
= 30 V
= –1 A
10.2
18
GS
SD
S
V
I
D
1.1
Notes
a. Room = 25_C, Full = as determined by the operating temperature suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Guaranteed by design, not subject to production testing.
Document Number: 70669
S-59510—Rev. B, 31-Aug-98
www.vishay.com S FaxBack 408-970-5600
2-2
Si4719CY
Vishay Siliconix
TIMING DIAGRAMS
10 V
SOURCE
50%
50%
V
V
IN
0 V
90%
10%
90%
10%
DRAIN
D
5 W
t
t
OFF(IN)
ON(IN)
t
r
t
f
TEST CIRCUIT 1
PIN CONFIGURATION
SO-16
D
D
S
S
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
2
2
2
2
1
2
TRUTH TABLE
2
VIN1
VIN2
Switch 1
Switch 2
D
G
2(OUT)
GND
IN
IN
2
0
0
1
1
0
1
0
1
Off
Off
On
On
Off
On
Off
On
GND
1
G
D
1
1(OUT)
S
1
D
1
S
1
D
1
Top View
Order Number: Si4719CY
PIN DESCRIPTION
Pin Number
Symbol
Description
1, 2, 3
4, 12
5
D
Drain connection for MOSFET-2.
Ground
2
GND
IN
Logic input, IN . High level turns on the switch.
1
1
6
G
1(OUT)
Gate output to MOSFET-1.
7, 8
S
Source connection for MOSFET-1
Drain connection for MOSFET-1.
1
9, 10, 11
13
D
1
IN
Logic input, IN . High level turns on the switch.
2
2
14
G
2(OUT)
Gate output to MOSFET-2.
15, 16
S
2
Source connection for MOSFET-2.
Document Number: 70669
S-59510—Rev. B, 31-Aug-98
www.vishay.com S FaxBack 408-970-5600
2-3
Si4719CY
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
On-Resistance vs. Drain Current
On-Resistance vs. Source Voltage
0.10
0.050
0.040
0.030
0.020
0.010
0.000
0.08
0.06
0.04
0.02
0
V
S
= 10 V
I
S
= 1 A
0
3
6
9
12
15
18
21
0
1
2
3
4
5
6
I
S
(A)
V (V)
S
Normalized On-Resistance vs.
Junction Temperature
Output Capacitance vs. Source Voltage
1.8
1200
900
600
300
0
V
I
= 10 V
= 1 A
S
S
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
IN
= 0 V
–50 –25
0
25
50
75
100 125 150
0
5
10
15
(V)
20
25
30
T – Junction Temperature (_C)
J
V
S
On-Supply Current vs. Source Voltage
Off-Supply Current vs. Source Voltage
10.000
1.000
0.100
0.010
0.001
10.000
1.000
0.100
0.010
0.001
T = 150_C
J
T = 150_C
J
T = 25_C
J
T = 25_C
J
0
5
10
15
(V)
20
25
30
0
5
10
15
(V)
20
25
30
V
V
S
S
Document Number: 70669
S-59510—Rev. B, 31-Aug-98
www.vishay.com S FaxBack 408-970-5600
2-4
Si4719CY
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Drain-Source Diode Forward Voltage
Input Voltage Trip Point vs. Temperature
10
4.30
4.25
4.20
4.15
4.10
4.05
4.0
V
S
= 21 V
T = 150_C
J
V
S
= 10 V
T = 25_C
J
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
–50
–25
0
25
50
75
100
125
125
125
150
150
150
V
– Source-to-Drain Voltage (V)
T = Ambient Temperature (_C)
A
SD
Turn-On Delay vs. Temperature
Turn-off Delay vs. Temperature
4.0
3.6
3.2
2.8
2.4
2.0
1.6
1.4
1.2
1.0
0.8
0.6
V
= 10 V
Rl = 5 W
V = 10 V
S
Rl = 5 W
S
–50
–25
0
25
50
75
100
125
150
–50
–25
0
25
50
75
100
Temperature (_C)
Temperature (_C)
Rise Time vs. Temperature
Fall Time vs. Temperature
32
30
28
26
24
22
20
18
1.0
0.9
0.8
0.7
0.6
0.5
V
S
= 10 V
Rl = 5 W
V = 10 V
S
Rl = 5 W
–50
–25
0
25
50
75
100
125
150
–50
–25
0
25
50
75
100
Temperature (_C)
Temperature (_C)
Document Number: 70669
S-59510—Rev. B, 31-Aug-98
www.vishay.com S FaxBack 408-970-5600
2-5
Si4719CY
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Single Pulse Power
40
30
20
10
0
0.01
0.1
1
10
100
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
P
DM
0.1
0.05
t
1
t
2
t
t
1
1. Duty Cycle, D =
2
0.02
2. Per Unit Base = R
= 83.3_C/W
thJA
(t)
3. T – T = P
Z
JM
A
DM thJA
Single Pulse
4. Surface Mounted
0.01
–4
–3
–2
–1
10
10
10
10
1
10
100
Square Wave Pulse Duration (sec)
Document Number: 70669
S-59510—Rev. B, 31-Aug-98
www.vishay.com S FaxBack 408-970-5600
2-6
Si4719CY
Vishay Siliconix
APPLICATION DRAWINGS
Si4719CY
Si4435DY
D
1
S
1
Battery 1
Logic In 1
G
1
Drive
Si4435DY
D
2
S
2
DC/DC
Battery 2
Logic In 2
G
2
Drive
FIGURE 1
S
1
G
1
S
2
G
2
Drive
Drive
Si4719CY
D
1
D
2
Logic In
Battery 2
DC/DC
S
1
G
1
S
2
G
2
Si4719CY
Drive
Drive
D
1
D
2
Logic In
Battery 1
FIGURE 2
Document Number: 70669
S-59510—Rev. B, 31-Aug-98
www.vishay.com S FaxBack 408-970-5600
2-7
Si4719CY
Vishay Siliconix
APPLICATION DRAWINGS
1/2 Si4719
AC/DC
Display
Power
1/2 Si4719
Charger
Logic In
Drive
7 – 30 V
3 – 5 Cell
Li-Ion
5 V
3.3 V
Logic In
Drive
DC/DC
FIGURE 3: Low-Cost Laptop PC
1/2 Si4719
1/2 Si4719
Display
Power
AC/DC
Charger
Logic In
Logic In
Drive
Drive
5 V
DC/DC
3.3 V
1/2 Si4719
1/2 Si4719
7 – 30 V
3 – 5 Cell
Li-Ion
Si6415
Logic In
Drive
Logic In
Drive
7 – 30 V
3 – 5 Cell
Li-Ion
1/2 Si4719
1/2 Si4719
Si6415
Logic In
Drive
Logic In
Drive
FIGURE 4: High-Performance Laptop PC
Document Number: 70669
S-59510—Rev. B, 31-Aug-98
www.vishay.com S FaxBack 408-970-5600
2-8
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