SF1600-TR [VISHAY]
Ultrafast Avalanche Sinterglass Diode; 超快雪崩二极管Sinterglass型号: | SF1600-TR |
厂家: | VISHAY |
描述: | Ultrafast Avalanche Sinterglass Diode |
文件: | 总4页 (文件大小:119K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SF1200, SF1600
Vishay Semiconductors
www.vishay.com
Ultrafast Avalanche Sinterglass Diode
FEATURES
• Very low switching losses
• Glass passivated
• High reverse voltage
• Hermetically
envelope
sealed
axial-leaded
glass
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
949539
APPLICATIONS
MECHANICAL DATA
• Switched mode power supplies
• High-frequency inverter circuits
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
ORDERING INFORMATION (Example)
DEVICE NAME
ORDERING CODE
TAPED UNITS
MINIMUM ORDER QUANTITY
SF1600
SF1600-TR
5000 per 10" tape and reel
5000 per ammopack
25 000
25 000
SF1600
SF1600-TAP
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
SOD-57
SF1200
V
R = 1200 V; IF(AV) = 1 A
R = 1600 V; IF(AV) = 1 A
SF1600
V
SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
See electrical characteristics
tp = 10 ms, half sine wave
PART
SF1200
SF1600
SYMBOL
VALUE
1200
1600
30
UNIT
V
R = VRRM
R = VRRM
IFSM
V
V
A
Reverse voltage = repetitive peak
reverse voltage
V
Peak forward surge current
Average forward current
Half sine wave, VR = VRRM
,
IF(AV)
1
10
A
RthJA = 45 K/W
Max. pulse energy in avalanche
mode, non repetitive (inductive load
switch off
I
(BR)R = 400 mA, inductive load
ER
mJ
°C
Junction and storage temperature
range
Tj = Tstg
- 55 to + 175
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
45
UNIT
Junction ambient
Lead length l = 10 mm, TL = constant
RthJA
K/W
Rev. 1.8, 11-Sep-12
Document Number: 86059
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SF1200, SF1600
Vishay Semiconductors
www.vishay.com
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
V
Forward voltage
IF = 1 A
VF
IR
-
-
-
-
-
-
-
3.4
5
VR = VRRM
-
-
μA
μA
V
Reverse current
VR = VRRM, Tj = 125 °C
IR
50
-
SF1200
SF1600
V(BR)R
V(BR)R
trr
1250
1650
-
Reverse breakdown voltage
Reverse recovery time
lR = 100 μA
-
V
IF = 0.5 A, IR = 1 A, iR = 0.25 A
75
ns
TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)
100
10
1000
100
10
VR = VRRM
Tj = 175 °C
1
Tj = 25 °C
0.1
0.01
0.001
16463
1
25
50
75
100
125
150
175
5
0
1
2
3
4
6
7
8
9
16464
Tj - Junction Temperature (°C)
VF - Forward Voltage (V)
Fig. 1 - Forward Current vs. Forward Voltage
Fig. 3 - Reverse Current vs. Junction Temperature
700
VR = VRRM
VR = VRRM
half sine wave
1.0
0.8
0.6
0.4
0.2
0.0
600
500
PR - Limit
at 100 % VR
RthJA = 45 K/W
400
300
200
100
0
l = 10 mm
PR - Limit
at 80 % VR
RthJA = 100 K/W
PCB: d = 25 mm
25
50
75
100
125
150
175
0
20 40 60 80 100 120 140 160 180
16465
Tj - Junction Temperature (°C)
Tamb - Ambient Temperature (°C)
15789
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Reverse Power Dissipation vs. Junction Temperature
Rev. 1.8, 11-Sep-12
Document Number: 86059
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SF1200, SF1600
Vishay Semiconductors
www.vishay.com
30
25
20
15
10
5
f = 1 MHz
0
0.1
1.0
10.0
100.0
16466
VR - ReverseVoltage (V)
Fig. 5 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
26 (1.024) min.
26 (1.024) min.
4 (0.157) max.
20543
Rev. 1.8, 11-Sep-12
Document Number: 86059
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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