SD103B-TAP [VISHAY]
Small Signal Schottky Barrier Diodes; 小信号肖特基势垒二极管
| 型号： | SD103B-TAP |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Schottky Barrier Diodes |
| 文件： | 总4页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SD103A–SD103C
Vishay Semiconductors
Small Signal Schottky Barrier Diodes
Features
Integrated protection ring
against static discharge
Low capacitance
Low leakage current
Low forward voltage drop
Applications
94 9367
HF–Detector
Protection circuit
Small battery charger
AC–DC / DC–DC converters
Order Instruction
Type
Type Differentiation
V =40 V, V @I 20mA max. 0.37 V
Ordering Code
Remarks
Ammopack
Tape and Reel
Ammopack
Tape and Reel
Ammopack
Tape and Reel
SD103A–TAP
SD103A–TR
SD103B–TAP
SD103B–TR
SD103C–TAP
SD103C–TR
SD103A
SD103B
SD103C
R
F
F
V =30 V, V @I 20mA max. 0.37 V
R
F
F
V =20 V, V @I 20mA max. 0.37 V
R
F
F
Absolute Maximum Ratings
T = 25 C
j
Parameter
Test Conditions
Type
Symbol
Value
40
30
Unit
V
V
SD103A
SD103B
SD103C
V
R
V
R
V
R
Reverse voltage
20
V
Peak forward surge current
Power dissipation
Junction temperature
Storage temperature range
t =300 s, square pulse
I
P
15
400
125
A
mW
C
p
FSM
l=4 mm, T =constant
L
tot
T
j
T
–65...+150
C
stg
Maximum Thermal Resistance
T = 25 C
j
Parameter
Junction ambient
Test Conditions
l=4 mm, T =constant
Symbol
R
thJA
Value
250
Unit
K/W
L
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1 (4)
Document Number 85633
Rev. 1, 22-Nov-00
SD103A–SD103C
Vishay Semiconductors
Electrical Characteristics
T = 25 C
j
Parameter
Test Conditions
Type
Symbol Min Typ Max Unit
SD103A
SD103B
SD103C
SD103A
SD103B
SD103C
V
V
V
40
30
20
V
V
V
A
A
A
(BR)R
(BR)R
(BR)R
Reverse Breakdown
Voltage
I =10 A
R
V = 30 V
I
R
I
R
I
R
5
5
5
R
Leakage current
V = 20 V
R
V = 10 V
R
I =20mA
V
V
C
0.37
0.6
V
V
pF
ns
F
F
F
D
Forward voltage drop
I =200mA
F
Junction capacitance V = 0 V, f= 1MHz
50
10
R
Reverse recovery time I =I =50 to 200mA, recover to 0.1 I
t
rr
F
R
R
Characteristics (Tj = 25 C unless otherwise specified)
1000
10000
1000
100
10
100
10
1
0.1
0.01
0.001
1
0
100 200 300 400 500 600 700 800 9001000
– Forward Voltage ( mV )
0
20 40 60 80 100 120 140 160
T – Junction Temperature ( °C )
16765
V
16767
F
j
Figure 1. Forward Current vs. Forward Voltage
Figure 3. Reverse Current vs. Junction Temperature
5
30
f=1MHz
25
4
3
2
1
0
20
15
10
5
0
0
0.5
1.0
1.5
2.0
0
5
10
V – Reverse Voltage ( V )
R
15
20
25
30
16766
V
– Forward Voltage ( V )
16768
F
Figure 2. Forward Current vs. Forward Voltage
Figure 4. Diode Capacitance vs. Reverse Voltage
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2 (4)
Document Number 85633
Rev. 1, 22-Nov-00
SD103A–SD103C
Vishay Semiconductors
25
20
15
10
5
0
0.1
1.0
t – Pulse width ( ms )
10.0
p
16769
Figure 5. Typ. Non Repetitive Forward Surge Current
vs. Pulse width
Dimensions in mm
Cathode Identification
0.55 max.
technical drawings
according to DIN
specifications
1.7 max.
94 9366
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
26 min.
3.9 max.
26 min.
Weight max. 0.3g
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3 (4)
Document Number 85633
Rev. 1, 22-Nov-00
SD103A–SD103C
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Semiconductors products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4 (4)
Document Number 85633
Rev. 1, 22-Nov-00
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