SA2B-M3/5AT [VISHAY]
DIODE RECTIFIER DIODE, Rectifier Diode;
| 型号： | SA2B-M3/5AT |
| 厂家： | 
VISHAY |
| 描述： | DIODE RECTIFIER DIODE, Rectifier Diode 光电二极管 |
| 文件： | 总4页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SA2B-M3, SA2D-M3, SA2G-M3, SA2J-M3, SA2K-M3, SA2M-M3
www.vishay.com
Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
DO-214AC (SMA)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer
and telecommunication.
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
VRRM
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - RoHS-compliant, commercial grade
IFSM
IR
55 A
3.0 μA
0.854 V
VF at IF = 2.0 A
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
TJ max.
Package
150 °C
DO-214AC (SMA)
Single die
Diode variations
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SA2B
SA2D
2D
SA2G
2G
SA2J
2J
SA2K
2K
SA2M
2M
UNIT
Device marking code
2B
Max. repetitive peak reverse voltage
Average forward current
VRRM
IF(AV)
100
200
400
600
800
1000
V
A
2.0
55
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
IFSM
A
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
0.911
0.954
0.805
0.854
0.19
MAX.
UNIT
IF = 1.0 A
-
1.1
-
TJ = 25 °C
IF = 2.0 A
IF = 1.0 A
IF = 2.0 A
(1)
Instantaneous forward voltage
VF
V
TJ = 125 °C
0.95
3
TJ = 25 °C
(2)
Reverse current
Rated VR
IR
μA
TJ = 125 °C
28
90
IF = 0.5 A, IR = 1.0 A,
Typical reverse recovery time
Typical junction capacitance
trr
1.5
11
-
-
μs
Irr = 0.25 A
4.0 V, 1 MHz
CJ
pF
Notes
(1)
(2)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
Revision: 19-Feb-16
Document Number: 89930
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SA2B-M3, SA2D-M3, SA2G-M3, SA2J-M3, SA2K-M3, SA2M-M3
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SA2B
SA2D
SA2G
SA2J
SA2K
SA2M
UNIT
(1)
RJA
80
12
Typical thermal resistance
°C/W
(1)
RJL
Note
(1)
Thermal resistance from junction to ambient and from junction to lead, PCB mounted on 0.79" x 0.79" (20 mm x 20 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
SA2J-M3/61T
0.064
0.064
61T
5AT
1800
7500
7" diameter plastic tape and reel
13" diameter plastic tape and reel
SA2J-M3/5AT
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
3.0
2.5
2.0
1.5
1.0
0.5
0
70
60
50
40
30
20
10
0
8.3 ms Single Half Sine-Wave
Resistive or Inductive Load
Lead Temperature
Ambient Temperature
P.C.B. Mounted on
0.79" x 0.79" (20 mm x 20 mm)
Copper Pad Areas
0
25
50
75
100
125
150
175
1
10
100
Number of Cycles at 50 Hz
Lead Temperature (°C)
Fig. 1 - Max. Forward Current Derating Curve
Fig. 3 - Max. Non-Repetitive Peak Forward Surge Current
2.5
2.0
1.5
1.0
0.5
0
10
D = 0.8
D = 0.5
TJ = 150 °C
TJ = 125 °C
D = 0.3
D = 0.2
D = 1.0
D = 0.1
1
TJ = 25 °C
T
D = tp/T
tp
0.1
0
0.5
Average Forward Current (A)
0.5
0.7
0.9
1.1
1.3
1.0
1.5
2.0
2.5
Instantaneous Forward Voltage (V)
Fig. 2 - Forward Power Loss Characteristics
Fig. 4 - Typical Instantaneous Forward Characteristics
Revision: 19-Feb-16
Document Number: 89930
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SA2B-M3, SA2D-M3, SA2G-M3, SA2J-M3, SA2K-M3, SA2M-M3
www.vishay.com
Vishay General Semiconductor
1000
100
10
100
Junction to Ambient
TJ = 150 °C
TJ = 125 °C
10
1
TJ = 25 °C
0.1
0.01
1
0.01
10
20
30
40
50
60
70
80
90 100
0.1
1
10
100
1000
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 5 - Typical Reverse Leakage Characteristics
Fig. 7 - Typical Transient Thermal Impedance
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
0.1
1
10
100
Reverse Voltage (V)
Fig. 6 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 19-Feb-16
Document Number: 89930
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 08-Feb-17
Document Number: 91000
1
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