S3M-E3/7 [VISHAY]

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN;
S3M-E3/7
型号: S3M-E3/7
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN

光电二极管
文件: 总4页 (文件大小:335K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
S3A thru S3M  
Vishay General Semiconductor  
Surface Mount Glass Passivated Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
3.0 A  
50 V to 1000 V  
100 A  
10 µA  
VF  
1.15 V  
Tj max.  
150 °C  
DO-214AB (SMC)  
Features  
Mechanical Data  
• Low profile package  
Case: DO-214AB (SMC)  
• Ideal for automated placement  
• Glass passivated chip junction  
• Low forward voltage drop  
• Low leakage current  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• High forward surge capability  
Polarity: Color band denotes cathode end  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
Typical Applications  
For use in general purpose rectification of power sup-  
plies, inverters, converters and freewheeling diodes  
for consumer, automotive and Telecommunication  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol S3A  
S3B  
SB  
S3D  
SD  
S3G  
SG  
S3J  
SJ  
S3K  
SK  
S3M  
SM  
Unit  
Device marking code  
SA  
50  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
100  
200  
400  
600  
800  
1000  
V
V
V
A
35  
50  
70  
140  
200  
280  
400  
3.0  
420  
600  
560  
800  
700  
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current at TL= 103 °C (1)  
IF(AV)  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
100  
A
Operating junction and storage temperature range  
TJ,TSTG  
- 55 to + 150  
°C  
Document Number 88713  
06-Sep-05  
www.vishay.com  
1
S3A thru S3M  
Vishay General Semiconductor  
Electrical Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Test condition  
Symbol S3A  
VF  
S3B  
S3D  
S3G  
1.15  
S3J  
S3K  
S3M  
Unit  
V
Maximum instantaneous forward at 2.5 A  
voltage  
Maximum DC reverse current at  
rated DC blocking voltage  
TA= 25 °C  
IR  
trr  
10  
250  
µA  
µs  
pF  
TA= 125 °C  
Typical reverse recovery time  
at IF = 0.5 A, IR = 1.0 A,  
Irr = 0.25 A  
2.5  
60  
Typical junction capacitance  
at 4.0 V, 1 MHz  
CJ  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Typical thermal resistance (1)  
Symbol S3A  
RθJA  
RθJL  
S3B  
S3D  
S3G  
S3J  
S3K  
S3M  
Unit  
47  
13  
°C/W  
Notes:  
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.3 x 0.3" (8.0 x 8.0 mm) copper pad area  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
3.5  
3.0  
200  
100  
Resistive or Inductive Load  
TL = 75 °C  
8.3 ms Single Half Sine-Wave  
2.5  
2.0  
1.5  
1.0  
P.C.B. mounted on  
0.3 x 0.3" (8.0 x 8.0mm)  
Copper Pad areas  
0.5  
0
10  
50 60 70 80 90 100 110 120 130 140 150 160  
Lead Temperature (°C)  
1
10  
100  
Number of Cycles at 60 Hz  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
www.vishay.com  
Document Number 88713  
06-Sep-05  
2
S3A thru S3M  
Vishay General Semiconductor  
100  
100  
TJ = 25 °C  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50mVp-p  
Pulse Width = 300 µs  
1% Duty Cycle  
10  
1
0.1  
0.01  
10  
0.6  
0.7  
0.8  
0.9  
1.0  
1.1  
1.2  
1.3  
1
10  
100  
Instantaneous Forward Voltage (V)  
Reverse Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Typical Junction Capacitance  
100  
100  
10  
1
Mounted on 0.20 x 0.27" (5 x 7mm)  
Copper Pad Areas  
10  
1
TJ = 125 °C  
TJ = 25 °C  
0.1  
0.1  
0
20  
40  
60  
80  
100  
0.01  
0.1  
t, Pulse Duration (sec.)  
Figure 6. Typical Transient Thermal Impedance  
1
10  
100  
Percent of Rated Peak Reverse Voltage (%)  
Figure 4. Typical Reverse Characteristics  
Package outline dimensions in inches (millimeters)  
DO-214AB (SMC)  
Mounting Pad Layout  
Cathode Band  
0.185 MAX.  
(4.69 MAX.)  
0.126 (3.20)  
0.114 (2.90)  
0.246 (6.22)  
0.220 (5.59)  
0.126 MIN.  
(3.20 MIN.)  
0.280 (7.11)  
0.060 MIN.  
(1.52 MIN.)  
0.260 (6.60)  
0.012 (0.305)  
0.006 (0.152)  
0.320 REF  
0.103 (2.62)  
0.079 (2.06)  
0.060 (1.52)  
0.030 (0.76)  
0.008 (0.2)  
0 (0)  
0.320 (8.13)  
0.305 (7.75)  
Document Number 88713  
06-Sep-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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