S391D-GS18 [VISHAY]

DIODE SILICON, PIN DIODE, DO-213AA, GLASS, MINIMELF-2, PIN Diode;
S391D-GS18
型号: S391D-GS18
厂家: VISHAY    VISHAY
描述:

DIODE SILICON, PIN DIODE, DO-213AA, GLASS, MINIMELF-2, PIN Diode

衰减器 测试 二极管
文件: 总3页 (文件大小:62K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
S391D  
Vishay Semiconductors  
VISHAY  
RF PIN Diode - Single in MiniMELF SOD-80  
Features  
• Wide frequency range 10 MHz to 1 GHz  
Applications  
Current controlled HF resistance in adjustable  
attenuators  
Mechanical Data  
Case: MiniMELF Glass Case (SOD-80)  
Weight: approx. 31 mg  
Cathode Band Color: Black  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 2.5 k per 7" reel (8 mm tape), 12.5 k/box  
Parts Table  
Part  
Type differentiation  
= 30 V  
Ordering code  
Remarks  
S391D  
V
LL4150-GS18 or LL4150-GS08 Tape and Reel  
R
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
Parameter  
amb  
Test condition  
Symbol  
Value  
30  
Unit  
V
Reverse voltage  
Forward current  
V
R
I
50  
mA  
F
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
500  
Unit  
K/W  
Junction ambient  
on PC board  
50 mm x 50 mm x 1.6 mm  
R
thJA  
Junction temperature  
T
125  
°C  
°C  
j
Storage temperature range  
T
- 55 to + 125  
stg  
Electrical Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Min  
Typ.  
Max  
1
Unit  
V
Forward voltage  
Reverse current  
Diode capacitance  
I = 20 mA  
V
F
F
V
= 30 V  
I
50  
nA  
pF  
R
R
f = 100 MHz, V = 0  
C
0.5  
R
D
Document Number 85569  
Rev. 1.4, 14-May-04  
www.vishay.com  
1
S391D  
Vishay Semiconductors  
VISHAY  
Parameter  
Test condition  
Symbol  
Min  
40  
Typ.  
4
Max  
60  
Unit  
Differential forward resistance  
Reverse impedance  
f = 100 MHz, I = 1.5 mA  
r
F
f
f = 100 MHz, V = 0  
z
5
k  
µs  
R
r
Minority carrier lifetime  
I
= 10 mA, I = 10 mA  
τ
F
R
Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
100  
10  
T
amb  
= 25°C  
1
Scattering Limit  
0.1  
0.01  
2.0  
0
0.4  
0.8  
1.2  
1.6  
V
- Forward Voltage ( V )  
95 9735  
F
Fig. 1 Forward Current vs. Forward Voltage  
Package Dimensions in mm (Inches)  
Cathode indification  
0.47 max.  
(0.02)  
3.5 0.2 (0.14 0.008)  
ISO Method E  
Mounting Pad Layout  
2.50 (0.098) max  
1.25 (0.049) min  
5 (0.197) ref  
96 12070  
www.vishay.com  
2
Document Number 85569  
Rev. 1.4, 14-May-04  
S391D  
Vishay Semiconductors  
VISHAY  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and  
operatingsystems with respect to their impact on the health and safety of our employees and the public, as  
well as their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the  
use of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 85569  
Rev. 1.4, 14-May-04  
www.vishay.com  
3

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