S2B-HE3 [VISHAY]

DIODE 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN, Rectifier Diode;
S2B-HE3
型号: S2B-HE3
厂家: VISHAY    VISHAY
描述:

DIODE 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN, Rectifier Diode

文件: 总4页 (文件大小:337K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
S2A thru S2M  
Vishay General Semiconductor  
Surface Mount Glass Passivated Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
1.5 A  
50 V to 1000 V  
50 A  
1.0 µA  
VF  
1.15 V  
Tj max.  
150 °C  
DO-214AA (SMB)  
Features  
Mechanical Data  
• Low profile package  
Case: DO-214AA (SMB)  
• Ideal for automated placement  
• Glass passivated chip junction  
• Low forward voltage drop  
• Low leakage current  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• High forward surge capability  
Polarity: Color band denotes cathode end  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260°C 40 seconds  
Typical Applications  
For use in general purpose rectification of power sup-  
plies, inverters, converters and freewheeling diodes  
for consumer, automotive and Telecommunication  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol S2A  
S2B  
SB  
S2D  
SD  
S2G  
SG  
S2J  
SJ  
S2K  
SK  
S2M  
SM  
Unit  
Device marking code  
SA  
50  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
100  
200  
400  
600  
800  
1000  
V
V
V
A
A
35  
50  
70  
140  
200  
280  
400  
1.5  
50  
420  
600  
560  
800  
700  
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current at TL= 100 °C  
IF(AV)  
IFSM  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
Operating and storage temperature range  
TJ,TSTG  
- 55 to + 150  
°C  
Document Number 88712  
15-Aug-05  
www.vishay.com  
1
S2A thru S2M  
Vishay General Semiconductor  
Electrical Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Test condition  
Symbol S2A  
VF  
S2B  
S2D  
S2G  
1.15  
S2J  
S2K  
S2M  
Unit  
V
Maximum instantaneous  
forward voltage  
at 1.5 A  
Maximum DC reverse  
current at Rated DC  
blocking voltage  
TA= 25 °C  
TA= 125 °C  
IR  
1.0  
125  
µA  
Typical reverse recovery  
time  
at IF = 0.5 A, IR = 1.0 A,  
Irr = 0.25 A  
trr  
2.0  
16  
µs  
pF  
Typical junction  
capacitance  
at 4.0 V, 1 MHz  
CJ  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Typical thermal resistance (1)  
Symbol S2A  
RθJA  
RθJL  
S2B  
S2D  
S2G  
S2J  
S2K  
S2M  
Unit  
53  
16  
°C/W  
Notes:  
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B.  
with 0.3 x 0.3" (8.0 x 8.0 mm) copper pad areas  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
50  
Resistive or Inductive Load  
TL = 100 °C  
8.3 ms Single Half Sine-Wave  
1.5  
40  
30  
1.0  
20  
60 Hz Resistive or  
Inductive Load  
0.5  
10  
0
P. C. B. M o unted  
0.27 x 0.27” (7.0 x 7.0 mm)  
Copper Pad Areas  
0
50 60 70 80 90 100 110 120 130 140 150  
Lead Temperature (°C)  
1
10  
100  
Number of Cycles at 60 Hz  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
www.vishay.com  
Document Number 88712  
15-Aug-05  
2
S2A thru S2M  
Vishay General Semiconductor  
10  
100  
10  
1
Tj = 150 °C  
Tj = 125 °C  
1
Tj = 25 °C  
0.1  
0.01  
0.1  
1
10  
100  
1.1  
Instantaneous Forward Voltage (V)  
0.5  
0.7  
0.9  
0.3  
1.3  
Reverse Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Typical Junction Capacitance  
1000  
100  
10  
1
Tj = 150 °C  
100  
Tj = 125 °C  
10  
1
Tj = 25 °C  
0.10  
0.01  
0
20  
40  
60  
80  
100  
0.01  
0.1  
1
10  
100  
t - Pulse Duration (sec)  
Percent of Rated Peak Reverse Voltage (%)  
Figure 4. Typical Reverse Characteristics  
Figure 6. Typical Transient Thermal Impedance  
Package outline dimensions in inches (millimeters)  
DO-214AA (SMB)  
Mounting Pad Layout  
Cathode Band  
0.085 MAX.  
(2.159 MAX.)  
0.086 (2.20)  
0.155 (3.94)  
0.130 (3.30)  
0.077 (1.95)  
0.086 MIN.  
(2.18 MIN.)  
0.180 (4.57)  
0.060 MIN.  
(1.52 MIN.)  
0.160 (4.06)  
0.012 (0.305)  
0.006 (0.152)  
0.220 REF  
0.096 (2.44)  
0.084 (2.13)  
0.060 (1.52)  
0.030 (0.76)  
0.008 (0.2)  
0 (0)  
0.220 (5.59)  
0.205 (5.21)  
Document Number 88712  
15-Aug-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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