S2B-HE3 [VISHAY]
DIODE 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN, Rectifier Diode;型号: | S2B-HE3 |
厂家: | VISHAY |
描述: | DIODE 1.5 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN, Rectifier Diode |
文件: | 总4页 (文件大小:337K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
S2A thru S2M
Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
IR
1.5 A
50 V to 1000 V
50 A
1.0 µA
VF
1.15 V
Tj max.
150 °C
DO-214AA (SMB)
Features
Mechanical Data
• Low profile package
Case: DO-214AA (SMB)
• Ideal for automated placement
• Glass passivated chip junction
• Low forward voltage drop
• Low leakage current
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
• High forward surge capability
Polarity: Color band denotes cathode end
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260°C 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
for consumer, automotive and Telecommunication
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol S2A
S2B
SB
S2D
SD
S2G
SG
S2J
SJ
S2K
SK
S2M
SM
Unit
Device marking code
SA
50
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
100
200
400
600
800
1000
V
V
V
A
A
35
50
70
140
200
280
400
1.5
50
420
600
560
800
700
Maximum DC blocking voltage
100
1000
Maximum average forward rectified current at TL= 100 °C
IF(AV)
IFSM
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating and storage temperature range
TJ,TSTG
- 55 to + 150
°C
Document Number 88712
15-Aug-05
www.vishay.com
1
S2A thru S2M
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Test condition
Symbol S2A
VF
S2B
S2D
S2G
1.15
S2J
S2K
S2M
Unit
V
Maximum instantaneous
forward voltage
at 1.5 A
Maximum DC reverse
current at Rated DC
blocking voltage
TA= 25 °C
TA= 125 °C
IR
1.0
125
µA
Typical reverse recovery
time
at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
trr
2.0
16
µs
pF
Typical junction
capacitance
at 4.0 V, 1 MHz
CJ
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Typical thermal resistance (1)
Symbol S2A
RθJA
RθJL
S2B
S2D
S2G
S2J
S2K
S2M
Unit
53
16
°C/W
Notes:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B.
with 0.3 x 0.3" (8.0 x 8.0 mm) copper pad areas
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
50
Resistive or Inductive Load
TL = 100 °C
8.3 ms Single Half Sine-Wave
1.5
40
30
1.0
20
60 Hz Resistive or
Inductive Load
0.5
10
0
P. C. B. M o unted
0.27 x 0.27” (7.0 x 7.0 mm)
Copper Pad Areas
0
50 60 70 80 90 100 110 120 130 140 150
Lead Temperature (°C)
1
10
100
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
Document Number 88712
15-Aug-05
2
S2A thru S2M
Vishay General Semiconductor
10
100
10
1
Tj = 150 °C
Tj = 125 °C
1
Tj = 25 °C
0.1
0.01
0.1
1
10
100
1.1
Instantaneous Forward Voltage (V)
0.5
0.7
0.9
0.3
1.3
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
1000
100
10
1
Tj = 150 °C
100
Tj = 125 °C
10
1
Tj = 25 °C
0.10
0.01
0
20
40
60
80
100
0.01
0.1
1
10
100
t - Pulse Duration (sec)
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-214AA (SMB)
Mounting Pad Layout
Cathode Band
0.085 MAX.
(2.159 MAX.)
0.086 (2.20)
0.155 (3.94)
0.130 (3.30)
0.077 (1.95)
0.086 MIN.
(2.18 MIN.)
0.180 (4.57)
0.060 MIN.
(1.52 MIN.)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.220 REF
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Document Number 88712
15-Aug-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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