S1J-HE3 [VISHAY]
DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode;![S1J-HE3](http://pdffile.icpdf.com/pdf2/p00296/img/icpdf/S1J-HE3_1792520_icpdf.jpg)
型号: | S1J-HE3 |
厂家: | ![]() |
描述: | DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode 光电二极管 |
文件: | 总4页 (文件大小:344K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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S1A thru S1M
Vishay General Semiconductor
Surface Mount Glass Passivated Rectifier
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
IR
1.0 A
50 V to 1000 V
40 A, 30 A
1.0 µA, 5.0 µA
1.1 V
VF
Tj max.
150 °C
DO-214AC (SMA)
Features
Mechanical Data
• Low profile package
Case: DO-214AC (SMA)
• Ideal for automated placement
• Glass passivated chip junction
• Low forward voltage drop
• Low leakage current
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
• High forward surge capability
Polarity: Color band denotes cathode end
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in general purpose rectification of power sup-
plies, inverters, converters and freewheeling diodes
for consumer, automotive and Telecommunication
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
S1A
SA
50
S1B
SB
S1D
SD
S1G
SG
S1J
SJ
S1K
SK
S1M
SM
Unit
Device marking code
Maximum recurrent peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
100
200
400
600
800
1000
V
V
V
A
A
35
50
70
140
200
280
400
1.0
420
600
560
800
700
Maximum DC blocking voltage
100
1000
Maximum average forward rectified current (see fig.1)
IF(AV)
IFSM
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
40
30
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
°C
Document Number 88711
06-Sep-05
www.vishay.com
1
S1A thru S1M
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Test condition
at 1.0 A
Symbol
VF
S1A
S1B
S1D
1.0
S1G
1.1
S1J
S1K
S1M
Unit
V
Maximum instantaneous
forward voltage
Maximum DC reverse current
at Rated DC blocking voltage
TA = 25 °C
TA= 125 °C
IR
trr
5.0
µA
µs
pF
50
Typical reverse recovery time at IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
1.8
Typical junction capacitance
at 4.0 V, 1 MHz
CJ
12
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Typical thermal resistance (1)
Symbol
RθJA
S1A
S1B
S1D
75
S1G
S1J
S1K
S1M
Unit
85
30
°C/W
RθJL
27
Notes:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B.
with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
1.2
1.0
0.8
0.6
0.4
0.2
0
100
10
0
TL = 110 °C
8.3 ms Single Half Sine-Wave
Resistive or Inductive Load
S1(A-J)
S1(A-J)
S1(K,M)
S1(K,M)
0.2 x 0.2" (5.0 x 5.0mm)
Thick Copper Pad Areas
0
20
40
60
80
100
120 140
160
1
10
Number of Cycles at 60 Hz
100
Lead Temperature (°C)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
Document Number 88711
06-Sep-05
2
S1A thru S1M
Vishay General Semiconductor
80
100
10
1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
TJ = 25 °C
10
1
Pulse Width = 300 µs
1% Duty Cycle
0.1
0.01
0.4
0.8
1.2
1.6
2.0
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
1000
10
TJ = 125 °C
1
0.1
S1(K,M)
100
10
1
TJ = 75 °C
S1(A-J)
0.01
0.001
Units Mounted on
T
J
= 25 °C
60
0.20 x 0.20" (5.0 x 5.0mm)
x 0.5 mil. Inches (0.013mm)
Thick Copper Land Areas
0
20
40
80
100
0.01
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t, Pulse Duration (sec.)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Transient Thermal Impedance
Package outline dimensions in inches (millimeters)
DO-214AC (SMA)
Cathode Band
Mounting Pad Layout
0.074 MAX.
(1.88 MAX.)
0.066 MIN.
(1.68 MIN.)
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
0.177 (4.50)
0.157 (3.99)
0.060 MIN.
(1.52 MIN.)
0.012 (0.305)
0.006 (0.152)
0.208
(5.28) REF
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Document Number 88711
06-Sep-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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