S1J-HE3 [VISHAY]

DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode;
S1J-HE3
型号: S1J-HE3
厂家: VISHAY    VISHAY
描述:

DIODE 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214AC, LEAD FREE, PLASTIC, SMA, 2 PIN, Signal Diode

光电二极管
文件: 总4页 (文件大小:344K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
S1A thru S1M  
Vishay General Semiconductor  
Surface Mount Glass Passivated Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
IR  
1.0 A  
50 V to 1000 V  
40 A, 30 A  
1.0 µA, 5.0 µA  
1.1 V  
VF  
Tj max.  
150 °C  
DO-214AC (SMA)  
Features  
Mechanical Data  
• Low profile package  
Case: DO-214AC (SMA)  
• Ideal for automated placement  
• Glass passivated chip junction  
• Low forward voltage drop  
• Low leakage current  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
• High forward surge capability  
Polarity: Color band denotes cathode end  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
Typical Applications  
For use in general purpose rectification of power sup-  
plies, inverters, converters and freewheeling diodes  
for consumer, automotive and Telecommunication  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameter  
Symbol  
S1A  
SA  
50  
S1B  
SB  
S1D  
SD  
S1G  
SG  
S1J  
SJ  
S1K  
SK  
S1M  
SM  
Unit  
Device marking code  
Maximum recurrent peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
100  
200  
400  
600  
800  
1000  
V
V
V
A
A
35  
50  
70  
140  
200  
280  
400  
1.0  
420  
600  
560  
800  
700  
Maximum DC blocking voltage  
100  
1000  
Maximum average forward rectified current (see fig.1)  
IF(AV)  
IFSM  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
40  
30  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Document Number 88711  
06-Sep-05  
www.vishay.com  
1
S1A thru S1M  
Vishay General Semiconductor  
Electrical Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Test condition  
at 1.0 A  
Symbol  
VF  
S1A  
S1B  
S1D  
1.0  
S1G  
1.1  
S1J  
S1K  
S1M  
Unit  
V
Maximum instantaneous  
forward voltage  
Maximum DC reverse current  
at Rated DC blocking voltage  
TA = 25 °C  
TA= 125 °C  
IR  
trr  
5.0  
µA  
µs  
pF  
50  
Typical reverse recovery time at IF = 0.5 A, IR = 1.0 A,  
Irr = 0.25 A  
1.8  
Typical junction capacitance  
at 4.0 V, 1 MHz  
CJ  
12  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameter  
Typical thermal resistance (1)  
Symbol  
RθJA  
S1A  
S1B  
S1D  
75  
S1G  
S1J  
S1K  
S1M  
Unit  
85  
30  
°C/W  
RθJL  
27  
Notes:  
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B.  
with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0
100  
10  
0
TL = 110 °C  
8.3 ms Single Half Sine-Wave  
Resistive or Inductive Load  
S1(A-J)  
S1(A-J)  
S1(K,M)  
S1(K,M)  
0.2 x 0.2" (5.0 x 5.0mm)  
Thick Copper Pad Areas  
0
20  
40  
60  
80  
100  
120 140  
160  
1
10  
Number of Cycles at 60 Hz  
100  
Lead Temperature (°C)  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
www.vishay.com  
Document Number 88711  
06-Sep-05  
2
S1A thru S1M  
Vishay General Semiconductor  
80  
100  
10  
1
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50mVp-p  
TJ = 25 °C  
10  
1
Pulse Width = 300 µs  
1% Duty Cycle  
0.1  
0.01  
0.4  
0.8  
1.2  
1.6  
2.0  
0.01  
0.1  
1
10  
100  
Instantaneous Forward Voltage (V)  
Reverse Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Typical Junction Capacitance  
1000  
10  
TJ = 125 °C  
1
0.1  
S1(K,M)  
100  
10  
1
TJ = 75 °C  
S1(A-J)  
0.01  
0.001  
Units Mounted on  
T
J
= 25 °C  
60  
0.20 x 0.20" (5.0 x 5.0mm)  
x 0.5 mil. Inches (0.013mm)  
Thick Copper Land Areas  
0
20  
40  
80  
100  
0.01  
0.1  
1
10  
100  
Percent of Rated Peak Reverse Voltage (%)  
t, Pulse Duration (sec.)  
Figure 4. Typical Reverse Leakage Characteristics  
Figure 6. Typical Transient Thermal Impedance  
Package outline dimensions in inches (millimeters)  
DO-214AC (SMA)  
Cathode Band  
Mounting Pad Layout  
0.074 MAX.  
(1.88 MAX.)  
0.066 MIN.  
(1.68 MIN.)  
0.065 (1.65)  
0.049 (1.25)  
0.110 (2.79)  
0.100 (2.54)  
0.177 (4.50)  
0.157 (3.99)  
0.060 MIN.  
(1.52 MIN.)  
0.012 (0.305)  
0.006 (0.152)  
0.208  
(5.28) REF  
0.090 (2.29)  
0.078 (1.98)  
0.060 (1.52)  
0.030 (0.76)  
0.008 (0.203)  
0 (0)  
0.208 (5.28)  
0.194 (4.93)  
Document Number 88711  
06-Sep-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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