S1A-E3/61T [VISHAY]
DIODE GEN PURP 50V 1A DO214AC;
| 型号： | S1A-E3/61T |
| 厂家： | 
VISHAY |
| 描述： | DIODE GEN PURP 50V 1A DO214AC |
| 文件： | 总4页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S1A, S1B, S1D, S1G, S1J, S1K, S1M
www.vishay.com
Vishay General Semiconductor
Surface-Mount Glass Passivated Rectifier
FEATURES
Available
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Low forward voltage drop
• Low leakage current
• High forward surge capability
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
SMA (DO-214AC)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Cathode
Anode
ADDITIONAL RESOURCES
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes for consumer,
automotive, and telecommunication.
3
D
3D Models
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Case: SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant and
AEC-Q101 qualified
IF(AV)
1.0 A
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
VRRM
IFSM
40 A, 30 A
5 mJ
EAS
IR
VF
1.0 μA, 5.0 μA
1.1 V
(“_X” denotes revision code e.g. A, B,.....)
TJ max.
150 °C
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Package
SMA (DO-214AC)
Single
Circuit configuration
Polarity: color band denotes cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL S1A
S1B
SB
S1D
SD
S1G
SG
S1J
SJ
S1K
SK
S1M UNIT
Device marking code
SA
SM
Maximum recurrent peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
V
V
V
A
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
100
1000
IF(AV)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
40
30
A
Non-repetitive peak reverse avalanche energy
at 25 °C, IAS = 1 A, L = 10 mH
EAS
5
mJ
°C
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
Revision: 21-Feb-2020
Document Number: 88711
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
S1A, S1B, S1D, S1G, S1J, S1K, S1M
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
S1A
S1B
S1D
S1G
S1J
S1K
S1M
UNIT
Maximum instantaneous
forward voltage
1.0 A
VF
1.1
V
TA = 25 °C
1.0
5.0
Maximum DC reverse current
at rated DC blocking voltage
IR
μA
TA = 125 °C
50
1.8
12
IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A
Typical reverse recovery time
Typical junction capacitance
trr
μs
4.0 V, 1 MHz
CJ
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
S1A
S1B
S1D
75
S1G
S1J
S1K
S1M
UNIT
RθJA
85
30
Typical thermal resistance (1)
°C/W
RθJL
27
Note
(1)
Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
1800
DELIVERY MODE
S1J-E3/61T
0.064
61T
5AT
H
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
S1J-E3/5AT
0.064
7500
S1JHE3_A/H (1)
S1JHE3_A/I (1)
S1J-M3/61T
0.064
1800
0.064
I
7500
0.064
61T
5AT
H
1800
S1J-M3/5AT
0.064
7500
S1JHM3_A/H (1)
S1JHM3_A/I (1)
0.064
1800
0.064
I
7500
Note
(1)
AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1.2
1.0
0.8
0.6
0.4
0.2
0
100
10
0
TL = 110 °C
8.3 ms Single Half Sine-Wave
Resistive or Inductive Load
S1A thru S1J
S1A thru S1J
S1K, S1M
S1K, S1M
0.2" x 0.2" (5.0 mm x 5.0 mm)
Thick Copper Pad Areas
1
10
100
0
20
40
60
80
100
120 140
160
Lead Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve
Revision: 21-Feb-2020
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
Document Number: 88711
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
S1A, S1B, S1D, S1G, S1J, S1K, S1M
www.vishay.com
Vishay General Semiconductor
100
10
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
Pulse Width = 300 μs 1% Duty Cycle
1
10
TJ = 25 °C
TJ = -40 °C
0.1
0.01
1
0.01
0.4
0.8
1.2
1.6
0.1
1
10
100
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
1000
10
TJ = 150 °C
1
S1K, S1M
100
10
TJ = 75 °C
0.1
TJ = 25 °C
S1A thru S1J
0.01
Units Mounted on
0.20" x 0.20" (5.0 mm x 5.0 mm)
x 0.5 Mil. Inches (0.013 mm)
Thick Copper Land Areas
TJ = -40 °C
1
0.01
0.001
0.1
1
10
100
0
20
40
60
80
100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
SMA (DO-214AC)
Cathode Band
Mounting Pad Layout
0.074 (1.88)
MAX.
0.066 (1.68)
MIN.
0.110 (2.79)
0.100 (2.54)
0.065 (1.65)
0.049 (1.25)
0.177 (4.50)
0.157 (3.99)
0.060 (1.52)
MIN.
0.012 (0.305)
0.006 (0.152)
0.208 (5.28)
REF.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 21-Feb-2020
Document Number: 88711
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Revision: 09-Jul-2021
Document Number: 91000
1
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