RS2J-HE3 [VISHAY]

DIODE 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN, Rectifier Diode;
RS2J-HE3
型号: RS2J-HE3
厂家: VISHAY    VISHAY
描述:

DIODE 1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AA, LEAD FREE, PLASTIC, SMB, 2 PIN, Rectifier Diode

功效 光电二极管
文件: 总4页 (文件大小:310K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
RS2A thru RS2K  
Vishay General Semiconductor  
Surface Mount Fast Switching Rectifier  
Major Ratings and Characteristics  
IF(AV)  
VRRM  
IFSM  
trr  
1.5 A  
50 V to 800 V  
50 A  
150 ns, 250 ns, 500 ns  
1.3 V  
VF  
Tj max.  
150 °C  
DO-214AA (SMB)  
Features  
Mechanical Data  
• Low profile package  
Case: DO-214AA (SMB)  
• Ideal for automated placement  
• Glass passivated chip junction  
• Fast switching for high efficiency  
• High forward surge capability  
• Meets MSL level 1, per J-STD-020C  
• Solder Dip 260 °C, 40 seconds  
Epoxy meets UL-94V-0 Flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade (AEC Q101 qualified)  
Polarity: Color band denotes cathode end  
Typical Applications  
For use in fast switching rectification of power supply,  
inverters, converters, and freewheeling diodes for  
consumer, automotive and Telecommunication  
Maximum Ratings  
(TA = 25 °C unless otherwise noted)  
Parameters  
Symbols  
RS2A  
RA  
RS2B  
RB  
RS2D  
RD  
RS2G  
RG  
RS2J  
RJ  
RS2K  
RK  
Units  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
50  
100  
200  
400  
600  
800  
V
V
V
A
A
35  
50  
70  
140  
200  
280  
400  
420  
600  
500  
800  
Maximum DC blocking voltage  
100  
Maximum average forward rectified current at TL= 100 °C  
IF(AV)  
IFSM  
1.5  
50  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
Document Number 88708  
16-Aug-05  
www.vishay.com  
1
RS2A thru RS2K  
Vishay General Semiconductor  
Electrical Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameters  
Test condition  
at 1.5 A  
Symbols  
VF  
RS2A  
RS2B  
RS2D  
RS2G  
RS2J  
250  
RS2K  
500  
Units  
V
Maximum instantaneous  
forward voltage  
1.3  
Maximum DC reverse  
current at rated DC  
blocking voltage  
TA= 25 °C  
TA= 125 °C  
IR  
5.0  
µA  
200  
Maximum reverse  
recovery time  
IF = 0.5 A, IR = 1.0 A,  
Irr = 0.25 A  
trr  
150  
20  
ns  
pF  
Typical junction  
capacitance  
at 4.0 V, 1 MHz  
CJ  
17  
Thermal Characteristics  
(TA = 25 °C unless otherwise noted)  
Parameters  
Typical thermal resistance (1)  
Symbols  
RθJA  
RθJL  
RS2A  
RS2B  
RS2D  
RS2G  
RS2J  
RS2K  
Units  
°C/W  
55  
18  
Notes:  
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B.  
with 0.27 x 0.27" (7.0 x 7.0 mm) copper pad  
Ratings and Characteristics Curves  
(TA = 25 °C unless otherwise noted)  
50  
Resistive or Inductive Load  
TL = 100 °C  
8.3 ms Single Half Sine-Wave  
1.5  
40  
30  
1.0  
20  
0.5  
10  
0
P. C. B. M o unted  
0.27 x 0.27” (7.0 x 7.0 mm)  
Copper Pad Areas  
0
1
10  
Number of Cycles at 60 HZ  
100  
50 60 70 80 90 100 110 120 130 140 150 160  
Lead Temperature (°C)  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current  
www.vishay.com  
Document Number 88708  
16-Aug-05  
2
RS2A thru RS2K  
Vishay General Semiconductor  
20  
10  
100  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50mVp-p  
Pulse Width = 300µs  
1% Duty Cycle  
1
RS2A-RS2G  
TJ = 25 °C  
10  
RS2J-RS2K  
0.1  
0.01  
1
0.4  
0.6  
0.8  
1.0  
1.2  
1.4  
1.6  
1.8  
1
10  
100  
Instantaneous Forward Voltage (V)  
Reverse Voltage (V)  
Figure 3. Typical Instantaneous Forward Characteristics  
Figure 5. Typical Junction Capacitance  
100  
TJ = 125 °C  
10  
1
TJ = 25 °C  
0.1  
0
20  
40  
60  
80  
100  
Percent of Rated Peak Reverse Voltage (%)  
Figure 4. Typical Reverse Characteristics  
Package outline dimensions in inches (millimeters)  
DO-214AA (SMB)  
Mounting Pad Layout  
Cathode Band  
0.085 MAX.  
(2.159 MAX.)  
0.086 (2.20)  
0.155 (3.94)  
0.130 (3.30)  
0.077 (1.95)  
0.086 MIN.  
(2.18 MIN.)  
0.180 (4.57)  
0.060 MIN.  
(1.52 MIN.)  
0.160 (4.06)  
0.012 (0.305)  
0.006 (0.152)  
0.220 REF  
0.096 (2.44)  
0.084 (2.13)  
0.060 (1.52)  
0.030 (0.76)  
0.008 (0.2)  
0 (0)  
0.220 (5.59)  
0.205 (5.21)  
Document Number 88708  
16-Aug-05  
www.vishay.com  
3
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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