PN4392 [VISHAY]
N-Channel JFETs; N沟道JFET的
| 型号： | PN4392 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel JFETs |
| 文件： | 总7页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N/PN/SST4391 Series
Vishay Siliconix
N-Channel JFETs
2N4391
2N4392
2N4393
PN4391
PN4392
PN4393
SST4391
SST4392
SST4393
PRODUCT SUMMARY
Part Number VGS(off) (V) rDS(on) Max (ꢀ ) ID(off) Typ (pA) tON Typ (ns)
2N/PN/SST4391
2N/PN/SST4392
2N/PN/SST4393
30
60
5
5
5
4
4
4
–4 to –10
–2 to –5
–0.5 to –3
100
FEATURES
BENEFITS
APPLICATIONS
D Low On-Resistance: 4391<30
ꢀ
D Low Error Voltage
D Analog Switches
D Choppers
D Fast Switching—tON: 4 ns
D High-Speed Analog Circuit Performance
D Negligible “Off-Error,” Excellent Accuracy
D Good Frequency Response, Low Glitches
D Eliminates Additional Buffering
D High Off-Isolation: ID(off) with Low
D Sample-and-Hold
D Normally “On” Switches
D Current Limiters
D Commutators
Leakage
D Low Capacitance: < 3.5 pF
D Low Insertion Loss
DESCRIPTION
The 2N/PN/SST4391 series features many of the superior
characteristics of JFETs which make it a good choice for
demanding analog switching applications and for specialized
amplifier circuits.
The 2N series hermetically-sealed TO-206AA (TO-18) can is
available with processing per MIL-S-19500 (see Military
Information). Both the PN, TO-226AA (TO-92), and SST,
TO-236 (SOT-23), series are available in tape-and-reel for
automated assembly (see Packaging Information). For similar
dual products, see the 2N5564/5565/5566 data sheet.
TO-206AA
(TO-18)
TO-226AA
(TO-92)
TO-236
(SOT-23)
S
1
2
D
S
1
2
D
S
1
2
3
G
3
G
3
D
G and Case
Top View
Top View
Top View
2N4391
2N4392
2N4393
PN4391
PN4392
PN4393
SST4391 (CA)*
SST4392 (CB)*
SST4393 (CC)*
*Marking Code for TO-236
For applications information see AN104 and AN106
.
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
www.vishay.com
7-1
2N/PN/SST4391 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage:
Operating Junction Temperature :
(2N/PN Prefixes) . . . . . . . . . . . . . . . . . . . –40 V
(2N Prefix) . . . . . . . . . . . . . . . . . . –55 to 200 _C
(SST Prefix) . . . . . . . . . . . . . . . . . . . . . . . –35 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 _C
(PN/SST Prefixes) . . . . . . . . . . . –55 to 150 _C
a
Power Dissipation :
Notes
(2N Prefix) . . . . . . . . . . (T = 25_C) 1800 mW
C
b
(PN/SST Prefixes) . . . . . . . . . . . . . . . 350 mW
Storage Temperature :
(2N Prefix) . . . . . . . . . . . . . . . . . . –65 to 200 _C
a. Derate 10 mW/_C above 25_C
(PN/SST Prefixes) . . . . . . . . . . . –55 to 150 _C
b. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
4391
4392
4393
Parameter
Static
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
Gate-Source
Breakdown Voltage
V
I
= –1 ꢁA, V = 0 V
–55
–40
–4
–40
–2
–40
(BR)GSS
G
DS
V
V
V
= 20 V
= 15 V
2N/PN: I = 1 nA
D
DS
DS
Gate-Source
Cutoff Voltage
V
–10
–5
–0.5
–3
GS(off)
SST: I = 10 nA
D
2N
50
50
50
150
150
25
25
25
75
5
5
5
30
60
Saturation Drain
Current
PN
SST
100
I
V
= 20 V, V = 0 V
mA
pA
nA
DSS
DS
GS
b
2N/SST
PN
–5
–5
–13
–1
–3
–5
5
–100
–1000
–200
–200
–100
–1000
–200
–200
–100
–1000
–200
–200
V
V
= –20 V
GS
= 0 V
DS
2N: T = 150_C
Gate Reverse Current
Gate Operating Current
I
A
GSS
PN:
T
A
= 100_C
= 125_C
SST:
T
A
I
G
V
= 15 V, I = 10 mA
DG D
2N: V = –5 V
100
1
GS
pA
2N: V = –7 V
5
100
GS
2N: V = –12 V
5
100
GS
V
= 20 V
DS
PN: V = –5 V
0.005
0.005
0.005
5
GS
PN: V = –7 V
1
nA
pA
GS
PN: V = –12 V
1
GS
SST V = 10 V, V = –10 V
100
100
200
100
200
DS
GS
Drain Cutoff Current
I
D(off)
2N: V = –5 V
13
13
13
1
GS
V
T
= 20 V
DS
2N: V = –7 V
GS
= 150_C
A
2N: V = –12 V
200
200
GS
PN: V = –5 V
200
0.4
GS
nA
V
T
= 20 V
DS
PN: V = –7 V
1
200
GS
= 100_C
A
PN: V = –12 V
1
GS
V
T
= 10 V
DS
SST: V = –10 V
3
GS
= 125_C
A
I
I
= 3 mA
= 6 mA
= 12 mA
0.25
0.3
D
Drain-Source
On-Voltage
0.4
V
V
= 0 V
GS
V
D
DS(on)
I
0.35
0.4
30
1
D
Drain-Source
On-Resistance
r
V
= 0 V, I = 1 mA
60
1
100
1
ꢀ
DS(on)
GS
DS
D
2N
0.7
0.7
Gate-Source
Forward Voltage
I
G
= 1 mA
= 0 V
V
V
GS(F)
V
PN/SST
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
www.vishay.com
7-2
2N/PN/SST4391 Series
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
4391
4392
4393
Parameter
Dynamic
Symbol
Test Conditions
Typa Min Max Min Max Min Max Unit
Common-Source
Forward Transconductance
g
6
mS
ꢁS
ꢀ
fs
V
= 20 V, I = 1 mA, f = 1 kHz
D
DS
Common-Source
Output Conductance
g
os
25
Drain-Source
On-Resistance
r
V
= 0 V, I = 0 mA , f = 1 kHz
30
60
100
DS(on)
GS
D
2N
12
12
14
16
14
16
14
16
Common-Source
Input Capacitance
V
= 20 V, V = 0 V
GS
f = 1 MHz
DS
PN
C
iss
SST
13
2N: V = –5 V
3.3
3.2
2.8
3.5
3.4
3.0
3.6
3.5
3.1
3.5
5
GS
2N: V = –7 V
3.5
5
GS
2N: V = –12 V
3.5
5
GS
pF
PN: V = –5 V
GS
Common-Source
Reverse Transfer
Capacitance
V
= 0 V
DS
PN: V = –7 V
C
rss
GS
f = 1 MHz
PN: V = –12 V
GS
SST: V = –5 V
GS
SST: V = –7 V
GS
SST: V = –12 V
GS
Equivalent Input
Noise Voltage
V
= 10 V, I = 10 mA
f = 1 kHz
nV⁄
√Hz
DS
D
e
n
3
Switching
2N/PN
SST
2
2
15
5
15
5
15
5
t
t
d(on)
Turn-On Time
2N/PN
SST
2
t
r
V
= 10 V
= 0 V
2
DD
V
ns
GS(H)
2N/PN
SST
6
20
15
35
20
50
30
See Switching Circuit
d(off)
6
Turn-Off Time
Notes
2N/PN
SST
13
13
t
f
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NCB
b. Pulse test: PW v300 ꢁs duty cycle v3%.
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
www.vishay.com
7-3
2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
On-Resistance vs. Drain Current
100
80
100
80
200
160
rDS @ ID = 1 mA, VGS = 0 V
T
A
= 25_C
IDSS @ VDS = 20 V, VGS = 0 V
IDSS
VGS(off) = –2 V
rDS
60
40
120
80
60
40
–4 V
–8 V
20
0
40
0
20
0
0
–2
–4
–6
–8
–10
1
10
ID – Drain Current (mA)
100
VGS(off) – Gate-Source Cutoff Voltage (V)
Turn-On Switching
On-Resistance vs. Temperature
5
200
160
t approximately independent of ID
r
VDD = 5 V, RG = 50 W
VGS(L) = –10 V
ID = 1 mA
rDS changes X 0.7%/_C
4
t
r
120
80
40
0
3
2
1
0
t
@
d(on)
V
= –2 V
GS(off)
I
D = 12 mA
–4 V
–8 V
t
@
d(on)
I
D = 3 mA
0
–10
–55 –35 –15
5
25 45
65
85 105 125
–2
–4
–6
–8
T
A
– Temperature (_C)
VGS(off) – Gate-Source Cutoff Voltage (V)
Turn-Off Switching
Capacitance vs. Gate-Source Voltage
30
30
24
t
independent of device VGS(off)
VDD = 5 V, VGS(L) = –10 V
d(off)
f = 1 MHz
V
DS = 0 V
24
18
12
6
18
12
6
VGS(off) = –2 V
t
f
t
d(off)
Ciss
VGS(off) = –8 V
Crss
0
0
0
2
4
6
8
10
0
–4
–8
–12
–16
–20
ID – Drain Current (mA)
VGS – Gate-Source Voltage (V)
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
www.vishay.com
7-4
2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Forward Transconductance and Output onductance
vs. Gate-Source Cutoff Voltage*
Noise Voltage vs. Frequency
100
50
500
g
V
and g @ V = 20 V
os DS
fs
VDS = 10 V
= 0 V, f = 1 kHz
GS
40
30
20
10
400
g
g
fs
os
200
10
ID = 1 mA
200
100
0
ID = 10 mA
1
0
100
10
0
–2
–4
–6
–8
–10
10
100
1 k
10 k
100 k
f – Frequency (Hz)
VGS(off) – Gate-Source Cutoff Voltage (V)
Gate Leakage Current
Common-Gate Input Admittance
10 nA
IGSS @ 125_C
VDG = 10 V
D = 10 mA
= 25_C
I
T
I
D
= 10 mA
T
A
= 125_C
g
ig
A
1 nA
1 mA
100 pA
10 pA
1 pA
b
ig
1 mA
10 mA
I
@ 25_C
GSS
1
T
A
= 25_C
I
@ I
D
G(on)
0.1 pA
0.1
100
200
500
1000
0
6
12
18
24
30
VDG – Drain-Gate Voltage (V)
f – Frequency (MHz)
Common-Gate Forward Admittance
Common-Gate Reverse Admittance
100
10
VDG = 10 V
D = 10 mA
= 25_C
VDG = 10 V
D = 10 mA
= 25_C
I
T
I
T
A
A
–g
fg
b
fg
–b
rg
1.0
10
1
g
fg
–g
rg
+g
rg
0.1
0.01
0.1
100
200
500
1000
100
200
500
1000
f – Frequency (MHz)
f – Frequency (MHz)
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
www.vishay.com
7-5
2N/PN/SST4391 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Transconductance vs. Drain Current
Common-Gate Output Admittance
100
10
1
100
10
VGS(off) = –2 V
VDS = 10 V
f = 1 kHz
VDG = 10 V
D = 10 mA
I
T
= 25_C
A
b
og
T
A
= –55_C
25_C
g
og
125_C
1
0.1
0.1
1.0
10
100
200
500
1000
f – Frequency (MHz)
ID – Drain Current (mA)
Output Characteristics
Transfer Characteristics
100
80
100
80
VGS(off) = –4 V
VGS(off) = –4 V
VDS = 20 V
T
A
= –55_C
VGS = 0 V
60
40
20
0
60
40
20
0
25_C
–0.5 V
–1.0 V
–1.5 V
–2.0 V
125_C
–1
–2.5 V
0
10
0
–5
2
4
6
8
–2
–3
–4
V
DS – Drain-Source Voltage (V)
V
GS – Gate-Source Voltage (V)
VDD
R
L
SWITCHING TIME TEST CIRCUIT
OUT
4391
–12 V
800 ꢀ
12 mA
4392
–7 V
4393
–5 V
VGS(H)
V
GS(L)
VGS(L)
R *
1600 ꢀ
6 mA
3000 ꢀ
3 mA
L
1 kΩ
51 Ω
51 Ω
I
D(on)
*Non-inductive
V
IN
INPUT PULSE
SAMPLING SCOPE
Scope
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
Rise Time 0.4 ns
Input Resistance 10 Mꢀ
Input Capacitance 1.5 pF
See Typical Characteristics curves for changes.
Document Number: 70241
S-04028—Rev. F, 04-Jan-01
www.vishay.com
7-6
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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