MBRF30H35CT-E3/45 [VISHAY]

DIODE 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode;
MBRF30H35CT-E3/45
型号: MBRF30H35CT-E3/45
厂家: VISHAY    VISHAY
描述:

DIODE 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode

局域网 功效 瞄准线 二极管
文件: 总5页 (文件大小:154K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MBR30HxxCT, MBRF30HxxCT, MBRB30HxxCT  
www.vishay.com  
Vishay General Semiconductor  
Dual Common Cathode Schottky Rectifier  
High Barrier Technology for Improved High Temperature Performance  
FEATURES  
TO-220AB  
ITO-220AB  
• Power pack  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• Low leakage current  
3
• High forward surge capability  
• High frequency operation  
3
2
2
1
1
MBR30HxxCT  
MBRF30HxxCT  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
245 °C (for TO-263AB package)  
PIN 1  
PIN 2  
PIN 1  
PIN 2  
CASE  
PIN 3  
PIN 3  
• Solder bath temperature 275 °C maximum, 10 s, per  
JESD 22-B106 (for TO-220AB and ITO-220AB package)  
TO-263AB  
K
• AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
2
1
TYPICAL APPLICATIONS  
MBRB30HxxCT  
PIN 1  
K
For use in low voltage, high frequency rectifier of switching  
mode power supplies, freewheeling diodes, DC/DC  
converters, or polarity protection application.  
PIN 2  
HEATSINK  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Case: TO-220AB, ITO-220AB, TO-263AB  
IF(AV)  
2 x 15 A  
Molding compound meets UL 94 V-0 flammability rating  
VRRM  
IFSM  
VF  
35 V, 45 V, 50 V, 60 V  
150 A  
Base P/N-E3  
-
RoHS-compliant, commercial grade  
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified  
0.56 V, 0.59 V  
80 μA, 60 μA  
175 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD 22-B102  
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix  
IR  
TJ max.  
TO-220AB, ITO-220AB,  
TO-263AB  
meets JESD 201 class 2 whisker test  
Package  
Polarity: As marked  
Diode variations  
Dual Common Cathode  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
VRRM  
VRWM  
VDC  
35  
35  
35  
45  
45  
45  
50  
50  
50  
60  
60  
60  
V
V
V
total device  
per diode  
30  
15  
Maximum average forward rectified  
current (fig. 1)  
IF(AV)  
A
Peak forward surge current 8.3 ms single half  
sine-wave superimposed on rated load per diode  
IFSM  
IRRM  
ERSM  
150  
A
A
Peak repetitive reverse surge current per diode  
at tp = 2 μs, 1 kHz  
1.0  
25  
0.5  
20  
Peak non-repetitive reverse energy   
(8/20 μs waveform)  
mJ  
Revision: 13-Aug-13  
Document Number: 88866  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
MBR30HxxCT, MBRF30HxxCT, MBRB30HxxCT  
www.vishay.com  
Vishay General Semiconductor  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL MBR30H35CT MBR30H45CT MBR30H50CT MBR30H60CT UNIT  
Non-repetitive avalanche energy per diode   
EAS  
VC  
80  
25  
mJ  
kV  
at 25 °C, IAS = 4 A, L = 10 mH  
Electrostatic discharge capacitor voltage human  
body model: C = 100 pF, R = 1.5 k  
Voltage rate of change (rated VR)  
dV/dt  
10 000  
V/μs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 175  
Isolation voltage (ITO-220AB only)  
from terminal to heatsink t = 1 min  
VAC  
1500  
V
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
MBR30H35CT  
MBR30H45CT  
MBR30H50CT  
MBR30H60CT  
PARAMETER  
TEST CONDITIONS  
SYMBOL  
UNIT  
IF = 15 A  
IF = 15 A  
IF = 30 A  
IF = 30 A  
TC = 25 °C  
TC = 125 °C  
TC = 25 °C  
TC = 125 °C  
TJ = 25 °C  
TJ = 125 °C  
-
0.49  
-
0.62  
0.56  
0.73  
0.67  
80  
-
0.55  
-
0.68  
0.59  
0.83  
0.71  
60  
Maximum instantaneous forward voltage  
per diode (1)  
VF  
V
0.62  
-
0.68  
-
μA  
Maximum reverse current per diode at  
working peak reverse voltage (2)  
IR  
5.0  
15  
4.0  
15  
mA  
Notes  
(1)  
Pulse test: 300 μs pulse width, 1 % duty cycle  
Pulse test: Pulse width 40 ms  
(2)  
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
MBR  
MBRF  
MBRB  
UNIT  
Typical thermal resistance junction to  
case per diode  
RJC  
1.5  
4.5  
1.5  
°C/W  
ORDERING INFORMATION (Example)  
PACKAGE  
TO-220AB  
ITO-220AB  
TO-263AB  
TO-263AB  
TO-220AB  
ITO-220AB  
TO-263AB  
TO-263AB  
PREFERRED P/N  
UNIT WEIGHT (g)  
PACKAGE CODE  
BASE QUANTITY  
50/tube  
DELIVERY MODE  
Tube  
MBR30H45CT-E3/45  
1.85  
1.99  
1.35  
1.35  
1.85  
1.99  
1.35  
1.35  
45  
45  
45  
81  
45  
45  
45  
81  
MBRF30H45CT-E3/45  
MBRB30H45CT-E3/45  
MBRB30H45CT-E3/81  
MBR30H45CTHE3/45 (1)  
MBRF30H45CTHE3/45 (1)  
MBRB30H45CTHE3/45 (1)  
MBRB30H45CTHE3/81 (1)  
50/tube  
Tube  
50/tube  
Tube  
800/teel  
Tape and reel  
Tube  
50/tube  
50/tube  
Tube  
50/tube  
Tube  
800/teel  
Tape and reel  
Note  
(1)  
AEC-Q101 qualified  
Revision: 13-Aug-13  
Document Number: 88866  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
MBR30HxxCT, MBRF30HxxCT, MBRB30HxxCT  
www.vishay.com  
Vishay General Semiconductor  
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)  
40  
30  
20  
10  
0
100  
10  
TJ = 150 °C  
MBR, MBRB  
1
TJ = 125 °C  
MBRF  
0.1  
0.01  
MBR30H35CT, MBR30H45CT  
MBR30H50CT, MBR30H60CT  
0.001  
0.0001  
TJ = 25 °C  
80  
75  
100  
125  
150  
175  
0
25  
50  
0
20  
40  
60  
100  
Case Temperature (°C)  
Percent of Rated Peak Reverse Voltage (%)  
Fig. 1 - Forward Derating Curve  
Fig. 4 - Typical Reverse Characteristics Per Diode  
150  
125  
100  
75  
10 000  
TJ = TJ Max.  
8.3 ms Single Half Sine-Wave  
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mVp-p  
1000  
50  
25  
MBR30H35CT - MBR30H45CT  
MBR30H50CT - MBR30H60CT  
0
100  
1
10  
100  
0.1  
1
10  
100  
Number of Cycles at 60 Hz  
Reverse Voltage (V)  
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge  
Current Per Diode  
Fig. 5 - Typical Junction Capacitance Per Diode  
100  
10  
TJ = 150 °C  
10  
TJ = 25 °C  
1
1
TJ = 125 °C  
0.1  
MBR30H35CT, MBR30H45CT  
MBR30H50CT, MBR30H60CT  
0.01  
0.1  
0.01  
0.1  
1
10  
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0  
Instantaneous Forward Voltage (V)  
t - Pulse Duration (s)  
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode  
Fig. 6 - Typical Transient Thermal Impedance Per Diode  
Revision: 13-Aug-13  
Document Number: 88866  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
MBR30HxxCT, MBRF30HxxCT, MBRB30HxxCT  
www.vishay.com  
Vishay General Semiconductor  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
TO-220AB  
ITO-220AB  
0.190 (4.83)  
0.170 (4.32)  
0.110 (2.79)  
0.100 (2.54)  
0.404 (10.26)  
0.384 (9.75)  
0.415 (10.54) MAX.  
0.185 (4.70)  
0.175 (4.44)  
0.055 (1.39)  
0.045 (1.14)  
0.370 (9.40)  
0.360 (9.14)  
0.154 (3.91)  
0.148 (3.74)  
0.076 (1.93) REF.  
0.076 (1.93) REF.  
7° REF.  
0.113 (2.87)  
0.103 (2.62)  
45° REF.  
0.140 (3.56) DIA.  
0.125 (3.17) DIA.  
0.135 (3.43) DIA.  
0.122 (3.08) DIA.  
0.145 (3.68)  
0.135 (3.43)  
0.671 (17.04)  
0.651 (16.54)  
0.600 (15.24)  
7° REF.  
0.580 (14.73)  
PIN  
0.603 (15.32)  
0.573 (14.55)  
0.635 (16.13)  
0.625 (15.87)  
0.350 (8.89)  
0.330 (8.38)  
PIN  
0.350 (8.89)  
0.330 (8.38)  
1
2
3
1
2
3
7° REF.  
0.160 (4.06)  
0.140 (3.56)  
1.148 (29.16)  
1.118 (28.40)  
0.191 (4.85)  
0.171 (4.35)  
0.560 (14.22)  
0.530 (13.46)  
0.110 (2.79)  
0.100 (2.54)  
0.110 (2.79)  
0.100 (2.54)  
0.057 (1.45)  
0.045 (1.14)  
0.057 (1.45)  
0.045 (1.14)  
0.560 (14.22)  
0.530 (13.46)  
0.057 (1.45)  
0.045 (1.14)  
0.105 (2.67)  
0.095 (2.41)  
0.035 (0.89)  
0.025 (0.64)  
0.035 (0.90)  
0.028 (0.70)  
0.205 (5.20)  
0.195 (4.95)  
0.025 (0.64)  
0.015 (0.38)  
0.105 (2.67)  
0.095 (2.41)  
0.028 (0.71)  
0.020 (0.51)  
0.104 (2.65)  
0.096 (2.45)  
0.022 (0.56)  
0.014 (0.36)  
0.205 (5.21)  
0.195 (4.95)  
TO-263AB  
Mounting Pad Layout  
0.411 (10.45)  
0.380 (9.65)  
0.245 (6.22)  
MIN.  
0.190 (4.83)  
0.160 (4.06)  
0.42 (10.66) MIN.  
0.055 (1.40)  
0.045 (1.14)  
K
0.33 (8.38) MIN.  
0.055 (1.40)  
0.047 (1.19)  
0.360 (9.14)  
0.320 (8.13)  
0.624 (15.85)  
0.670 (17.02)  
0.591 (15.00)  
1
K
2
0.591 (15.00)  
0 to 0.01 (0 to 0.254)  
0.110 (2.79)  
0.090 (2.29)  
0.021 (0.53)  
0.014 (0.36)  
0.15 (3.81) MIN.  
0.037 (0.940)  
0.027 (0.686)  
0.08 (2.032) MIN.  
0.105 (2.67)  
0.095 (2.41)  
0.140 (3.56)  
0.110 (2.79)  
0.105 (2.67)  
0.095 (2.41)  
0.205 (5.20)  
0.195 (4.95)  
Revision: 13-Aug-13  
Document Number: 88866  
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of  
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding  
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a  
particular product with the properties described in the product specification is suitable for use in a particular application.  
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over  
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for  
such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document  
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Revision: 13-Jun-16  
Document Number: 91000  
1

相关型号:

MBRF30H35CT-HE3/45

DIODE 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode
VISHAY

MBRF30H35CT/45

Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 35V V(RRM), Silicon, TO-220AB, PLASTIC, ITO-220AB, 3 PIN
VISHAY

MBRF30H35CT/45-E3

DIODE 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode
VISHAY

MBRF30H35CTHE3/45

DIODE 15 A, 35 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode
VISHAY

MBRF30H45CT

Dual Common-Cathode Schottky Rectifier
VISHAY

MBRF30H45CT-E3

DIODE 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode
VISHAY

MBRF30H45CT-E3/45

Dual Common-Cathode Schottky Rectifier
VISHAY

MBRF30H45CT-HE3/45

DIODE 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode
VISHAY

MBRF30H45CT/45-E3

DIODE 15 A, 45 V, SILICON, RECTIFIER DIODE, TO-220AB, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode
VISHAY

MBRF30H45CTHE3/45

Dual Common-Cathode Schottky Rectifier
VISHAY

MBRF30H50CT

Dual Common-Cathode Schottky Rectifier
VISHAY

MBRF30H50CT-HE3/45

DIODE 15 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode
VISHAY