MBRF2560CT-E3/45 [VISHAY]
DIODE 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode;
| 型号： | MBRF2560CT-E3/45 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 15 A, 60 V, SILICON, RECTIFIER DIODE, TO-220AB, ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode 局域网 功效 瞄准线 二极管 |
| 文件： | 总5页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR25xxCT, MBRF25xxCT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
FEATURES
TO-220AB
ITO-220AB
• Power pack
• Guardring for overvoltage protection
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
3
3
2
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106
2
1
1
MBR2535CT
MBR2545CT
PIN 1
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
MBRF2545CT
PIN 1
PIN 2
PIN 2
CASE
PIN 3
PIN 3
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
2 x 12.5 A
35 V, 45 V
150 A
MECHANICAL DATA
Case: TO-220AB, ITO-220AB
Epoxy meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix meets JESD 201 class 1A whisker test
VF
0.73 V at 30 A
150 °C
TJ max.
Package
TO-220AB, ITO-220AB
Common cathode
Diode variation
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VRRM
MBR2535CT
MBR2545CT
UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
35
35
35
45
45
45
VRWM
VDC
V
Maximum DC blocking voltage
total device
25
Maximum average forward rectified current
IF(AV)
A
at TC = 130 °C
per diode
12.5
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode
IFSM
IRRM
ERSM
VC
150
1.0
25
A
Peak repetitive reverse surge current per diode
at tp = 2 μs, 1 kHz
Peak non-repetitive reverse energy (8/20 μs waveform)
per diode
mJ
Electrostatic discharge capacitor voltage human body model: C = 100 pF,
R = 1.5 k
25
kV
Voltage rate of change (rated VR)
dV/dt
TJ
10 000
V/μs
Operating junction temperature range
-65 to +150
-65 to +175
1500
°C
V
Storage temperature range
TSTG
VAC
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
Revision: 28-Nov-17
Document Number: 88675
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR25xxCT, MBRF25xxCT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
MBR2535CT
MBR2545CT
UNIT
T
T
T
C = 25 °C
C = 125 °C
C = 25 °C
0.82
0.73
0.2
V
Maximum instantaneous forward voltage
(1)
IF = 30 A
VF
per diode
Maximum instantaneous reverse current at
blocking voltage per diode
(1)
IR
mA
TC = 125 °C
40
Note
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
UNIT
Typical thermal resistance from junction to case per diode
RJC
1.5
4.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
ITO-220AB
TO-220AB
PREFERRED P/N
MBR2545CT-E3/45 (1)
MBRF2545CT-E3/45
MBR2545CT-E3/4W
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
1.85
1.99
1.85
45
45
Tube
Tube
Tube
50/tube
4W
50/tube
Note
(1)
35 V device available in TO-220AB package only
Revision: 28-Nov-17
Document Number: 88675
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR25xxCT, MBRF25xxCT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)
30
24
18
12
6
100
10
Resistive or Inductive Load
TJ = 125 °C
1
TJ = 75 °C
0.1
0.01
0.001
TJ = 25 °C
0
0
100
0
20
40
60
80
100
50
150
Percent of Rated Peak Reverse Voltage (%)
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Fig. 4 - Typical Reverse Characteristics Per Diode
150
125
100
75
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
1000
50
25
100
0
0.1
1
10
1
10
100
100
Reverse Voltage (V)
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
100
10
TJ = 150 °C
10
Pulse Width = 300 µs
1 % Duty Cycle
1.0
TJ = 25 °C
1
0.1
0.01
0.1
0.1
1
10
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
0.01
100
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 28-Nov-17
Document Number: 88675
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBR25xxCT, MBRF25xxCT
www.vishay.com
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.415 (10.54) max.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.154 (3.91)
0.148 (3.74)
0.370 (9.40)
0.360 (9.14)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.603 (15.32)
0.573 (14.55)
0.635 (16.13)
0.625 (15.87)
PIN
2 3
0.350 (8.89)
0.330 (8.38)
1
0.160 (4.06)
0.140 (3.56)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.560 (14.22)
0.530 (13.46)
0.105 (2.67)
0.095 (2.41)
0.035 (0.90)
0.028 (0.70)
0.104 (2.65)
0.096 (2.45)
0.022 (0.56)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
ITO-220AB
0.404 (10.26)
0.384 (9.75)
0.190 (4.83)
0.170 (4.32)
0.076 (1.93) REF.
0.076 (1.93) REF.
0.110 (2.79)
0.100 (2.54)
7° REF.
45° REF.
0.140 (3.56) DIA.
0.135 (3.43) DIA.
0.125 (3.17) DIA.
0.122 (3.08) DIA.
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
0.580 (14.73)
7° REF.
PIN
0.350 (8.89)
0.330 (8.38)
1
2
3
7° REF.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.028 (0.71)
0.020 (0.51)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.205 (5.21)
0.195 (4.95)
Revision: 28-Nov-17
Document Number: 88675
4
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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