MBRF2090CT-M3/4W [VISHAY]
DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode;
| 型号： | MBRF2090CT-M3/4W |
| 厂家： | 
VISHAY |
| 描述： | DIODE 10 A, 90 V, SILICON, RECTIFIER DIODE, TO-220AB, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN, Rectifier Diode 局域网 功效 瞄准线 二极管 |
| 文件： | 总4页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBRF2090CT, MBRF20100CT
www.vishay.com
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
TMBS®
ITO-220AB
• Trench MOS Schottky technology
• Low power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
•
Solder bath temperature 275 °C max. 10 s, per JESD 22-B106
3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
2
1
MBRF2090CT
MBRF20100CT
PIN 1
PIN 2
TYPICAL APPLICATIONS
PIN 3
For use in high frequency rectifier of switching mode power
supplies, freewheeling diodes, DC/DC converters or polarity
protection application.
PRIMARY CHARACTERISTICS
MECHANICAL DATA
IF(AV)
2 x 10 A
Case: ITO-220AB
Molding compound meets UL 94 V-0 flammability rating
VRRM
90 V, 100 V
150 A
IFSM
Base P/N-M3
- halogen-free, RoHS-compliant, and
commercial grade
VF at IF = 10 A
TJ max.
Package
0.65 V
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
150 °C
ITO-220AB
Diode variation
Dual common cathode
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBRF2090CT
MBRF20100CT
UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
VRRM
90
90
90
100
100
100
V
V
V
VRWM
VDC
total device
per diode
20
10
Maximum average forward rectified current
IF(AV)
A
A
at TC = 133 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
Voltage rating of change (rated VR)
dV/dt
TJ, TSTG
VAC
10 000
V/μs
°C
Operating junction and storage temperature range
Isolation voltage from terminal to heatsink t = 1 min
-65 to +150
1500
V
Revision: 17-Aug-15
Document Number: 89319
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRF2090CT, MBRF20100CT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
0.80
0.65
0.75
100
UNIT
TC = 25 °C
IF = 10 A
IF = 20 A
(1)
Maximum instantaneous forward voltage per diode
VF
V
TC = 125 °C
TJ = 25 °C
μA
Maximum reverse current per diode
at working peak reverse voltage
(2)
IR
TJ = 100 °C
6.0
mA
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
Pulse test: Pulse width 40 ms
(2)
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBRF
UNIT
Typical thermal resistance per diode
RJC
3.5
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
4W
BASE QUANTITY
DELIVERY MODE
ITO-220AB
MBRF20100CT-M3/4W
1.75
50/tube
Tube
RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)
20
16
12
8
160
140
120
100
80
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
4
60
Resistive or Inductive Load
50
40
0
150
1
10
Number of Cycles at 60 Hz
100
0
100
Case Temperature (°C)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Maximum Non-Repetititve Peak Forward Surge
Current Per Diode
Revision: 17-Aug-15
Document Number: 89319
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MBRF2090CT, MBRF20100CT
www.vishay.com
Vishay General Semiconductor
100
10
10 000
TJ = 25 °C
f = 1 MHz
Vsig = 50 mVp-p
TJ = 150 °C
1000
100
10
TJ = 125 °C
1
0.1
0.01
TJ = 25 °C
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Instantaneous Forward Voltage (V)
1
10
100
Reverse Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitanc Per Diode
100
10
1
TJ = 150 °C
Junction to Case
10
TJ = 125 °C
1
0.1
0.1
0.01
0.001
0.01
TJ = 25 °C
0.001
0.1
100
10
20
30
40
50
60
70
80
90 100
1
10
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.404 (10.26)
0.384 (9.75)
0.076 (1.93) REF.
0.100 (2.54)
7° REF.
0.076 (1.93) REF.
45° REF.
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.135 (3.43) DIA.
0.122 (3.08) DIA.
0.671 (17.04)
0.651 (16.54)
0.600 (15.24)
0.580 (14.73)
7° REF.
0.350 (8.89)
0.330 (8.38)
PIN
1
2
3
7° REF.
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
0.110 (2.79)
0.100 (2.54)
0.057 (1.45)
0.045 (1.14)
0.057 (1.45)
0.045 (1.14)
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.105 (2.67)
0.095 (2.41)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
Revision: 17-Aug-15
Document Number: 89319
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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www.vishay.com
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Revision: 08-Feb-17
Document Number: 91000
1
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