MBR2090CT-E3/45 [VISHAY]

Rectifier Diode, Schottky, 10A, 90V V(RRM),;
MBR2090CT-E3/45
型号: MBR2090CT-E3/45
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, Schottky, 10A, 90V V(RRM),

二极管
文件: 总5页 (文件大小:146K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MBR(F,B)2090CT & MBR(F,B)20100CT  
Vishay General Semiconductor  
Dual Common-Cathode High-Voltage Schottky Rectifier  
FEATURES  
TO-220AB  
ITO-220AB  
• Guardring for overvoltage protection  
• Lower power losses, high efficiency  
• Low forward voltage drop  
• High forward surge capability  
• High frequency operation  
3
3
2
2
1
MBR2090CT  
MBR20100CT  
PIN 1  
1
MBRF2090CT  
MBRF20100CT  
• Meets MSL level 1, per J-STD-020C, LF max peak  
of 245 °C (for TO-263AB package)  
PIN 2  
CASE  
PIN 1  
PIN 2  
PIN 3  
PIN 3  
• Solder Dip 260 °C, 40 seconds (for TO-220AB &  
ITO-220AB package)  
TO-263AB  
K
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
2
1
TYPICAL APPLICATIONS  
MBRB2090CT  
MBRB20100CT  
For use in high frequency rectifier of switching  
mode power supplies, free-wheeling diodes, dc-to-dc  
converters or polarity protection application.  
PIN 1  
K
PIN 2  
HEATSINK  
MECHANICAL DATA  
Case: TO-220AB, ITO-220AB, TO-263AB  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
MAJOR RATINGS AND CHARACTERISTICS  
IF(AV)  
VRRM  
IFSM  
10 A x 2  
90 V, 100 V  
150 A  
E3 suffix for commercial grade  
VF  
0.65 V  
Polarity: As marked  
Tj max  
150 °C  
Mounting Torque: 10 in-lbs maximum  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
VRRM  
MBR2090CT MBR20100CT  
UNIT  
Maximum repetitive peak reverse voltage  
Working peak reverse voltage  
Maximum DC blocking voltage  
90  
90  
90  
100  
100  
100  
V
V
V
VRWM  
VDC  
Total device  
Maximum average forward rectified current at TC = 133 °C  
per diode  
20  
10  
IF(AV)  
A
A
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load per diode  
IFSM  
150  
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz  
Voltage rate of change (rated VR)  
IRRM  
dv/dt  
0.5  
A
10000  
V/µs  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 65 to + 150  
Isolation voltage (ITO-220AB only)  
From terminal to heatsink t = 1 minute  
VAC  
1500  
V
Document Number: 88672  
Revision: 03-Apr-07  
www.vishay.com  
1
MBR(F,B)2090CT & MBR(F,B)20100CT  
Vishay General Semiconductor  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
TEST CONDITIONS  
SYMBOL  
VALUE  
UNIT  
IF = 10 A, TC = 25 °C  
0.80  
0.65  
0.95  
0.75  
IF = 10 A,  
IF = 20 A,  
IF = 20 A,  
T
T
T
C = 125 °C  
C = 25 °C  
C = 125 °C  
Maximum instantaneous forward voltage per diode (1)  
VF  
V
Maximum reverse current per diode at working peak  
reverse voltage (1)  
Tj = 25 °C  
Tj = 100 °C  
100  
6.0  
µA  
mA  
IR  
Note:  
(1) Pulse test: 300 µs pulse width, 1 % duty cycle  
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
C
PARAMETER  
SYMBOL  
MBR  
MBRF  
MBRB  
UNIT  
RθJA  
RθJC  
60  
2.0  
-
60  
2.0  
Typical thermal resistance per diode  
°C/W  
3.5  
ORDERING INFORMATION (Example)  
PACKAGE  
TO-220AB  
ITO-220AB  
TO-263AB  
TO-263AB  
PREFERRED P/N  
MBR20100CT-E3/45  
MBRF20100CT-E3/45  
MBRB20100CT-E3/45  
MBRB20100CT-E3/81  
UNIT WEIGHT (g)  
PACKAGE CODE  
BASE QUANTITY  
50/Tube  
DELIVERY MODE  
Tube  
1.85  
1.99  
1.35  
1.35  
45  
45  
45  
81  
50/Tube  
Tube  
50/Tube  
Tube  
800/Reel  
Tape Reel  
RATINGS AND CHARACTERISTICS CURVES  
(T = 25 °C unless otherwise noted)  
A
20  
160  
140  
120  
100  
80  
Resistive or Inductive Load  
Tj = Tj max.  
8.3 ms Single Half Sine-Wave  
16  
12  
8
4
60  
40  
1
0
10  
50  
150  
100  
0
100  
Case Temperature (°C)  
Number of Cycles at 60 Hz  
Figure 1. Forward Current Derating Curve  
Figure 2. Maximum Non-Repetitive Peak Forward Surge  
Current Per Diode  
www.vishay.com  
2
Document Number: 88672  
Revision: 03-Apr-07  
MBR(F,B)2090CT & MBR(F,B)20100CT  
Vishay General Semiconductor  
50  
100  
10  
1
20  
10  
Tj = 150 °C  
Tj = 100 °C  
5.0  
3.0  
Tj = 25 °C  
1.0  
0.5  
0.1  
0.01  
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0  
Instantaneous Forward Voltage (V)  
0.1  
1
10  
100  
t - Pulse Duration (s)  
Figure 3. Typical Instantaneous Forward Characteristics Per Diode  
Figure 5. Typical Transient Thermal Impedance Per Diode  
Tj  
= 150 °C  
10  
1.0  
T
j = 125 °C  
Tj = 100 °C  
0.1  
Tj = 25 °C  
0.01  
0
20  
40  
60  
80  
100  
Percent of Rated Peak Reverse Voltage (%)  
Figure 4. Typical Reverse Characteristics Per Diode  
Document Number: 88672  
Revision: 03-Apr-07  
www.vishay.com  
3
MBR(F,B)2090CT & MBR(F,B)20100CT  
Vishay General Semiconductor  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
TO-220AB  
ITO-220AB  
See note  
0.404(10.26)  
0.384(9.75)  
0.415 (10.54) MAX.  
0.190(4.83)  
0.170(4.32)  
See note  
(4.70)  
0.185  
0.175 (4.44)  
0.076Ref.  
(1.93)ref.  
0.154 (3.91)  
0.148 (3.74)  
0.370 (9.40)  
0.360 (9.14)  
0.110(2.79)  
0.100(2.54)  
0.076Ref.  
(1.93)  
Ref.  
(1.39)  
0.045 (1.14)  
0.055  
7°Ref.  
0.113 (2.87)  
0.103 (2.62)  
45°Ref.  
0.140(3.56)DIA.  
0.125(3.17)DIA.  
0.135(3.43)DIA.  
0.122(3.08)DIA.  
0.671(17.04)  
0.651(16.54)  
0.600(15.24)  
0.580(14.73)  
0.145 (3.68)  
0.135 (3.43)  
PIN  
7°Ref.  
0.635 (16.13)  
0.603 (15.32)  
0.573 (14.55)  
0.350(8.89)  
0.330(8.38)  
0.625 (15.87)  
0.350 (8.89)  
0.330 (8.38)  
PIN  
3
1
2
2
3
1
0.160 (4.06)  
0.140 (3.56)  
0.191(4.85)  
0.171(4.35)  
7°Ref.  
1.148 (29.16)  
1.118 (28.40)  
0.560(14.22)  
0.530(13.46)  
0.110 (2.79)  
0.100 (2.54)  
0.057 (1.45)  
0.045 (1.14)  
0.057(1.45)  
0.045(1.14)  
0.080(2.03)  
0.065(1.65)  
0.110(2.79)  
0.100(2.54)  
0.560 (14.22)  
0.530 (13.46)  
0.105 (2.67)  
0.095 (2.41)  
0.035 (0.90)  
0.028 (0.70)  
0.035(0.89)  
0.025(0.64)  
0.025(0.64)  
0.015(0.38)  
0.105(2.67)  
0.095(2.41)  
0.104 (2.65)  
0.096 (2.45)  
0.028 (0.71)  
0.020(0.51)  
0.022 (0.56)  
0.014 (0.36)  
0.205 (5.20)  
0.195 (4.95)  
0.205(5.21)  
0.195(4.95)  
Note: Copper exposure is allowable for 0.005 (0.13) max. from the body  
TO-263AB  
0.41 (10.45)  
0.380 (9.65)  
0.190 (4.83)  
0.160 (4.06)  
Mounting Pad Layout  
0.055 (1.40)  
0.045 (1.14)  
0.42  
(10.66)  
0.245 (6.22)  
MIN  
MIN.  
K
0.33  
(8.38)  
0.055 (1.40)  
0.047 (1.19)  
MIN.  
0.360 (9.14)  
0.320 (8.13)  
0.624 (15.85)  
1
K
0.591(15.00)  
2
0.670 (17.02)  
0.591 (15.00)  
0-0.01 (0-0.254)  
0.110 (2.79)  
0.090 (2.29)  
0.021 (0.53)  
0.014 (0.36)  
0.15  
(3.81)  
0.037 (0.940)  
0.027 (0.686)  
MIN.  
0.08  
MIN.  
0.140 (3.56)  
0.110 (2.79)  
0.105 (2.67)  
0.095 (2.41)  
(2.032)  
0.205 (5.20)  
0.195 (4.95)  
0.105 (2.67)  
(0.095) (2.41)  
www.vishay.com  
4
Document Number: 88672  
Revision: 03-Apr-07  
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

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