MBR10H150CT-E3/45 [VISHAY]
Dual Common-Cathode High-Voltage Schottky Rectifier; 双共阴极高压肖特基整流器
| 型号： | MBR10H150CT-E3/45 |
| 厂家： | 
VISHAY |
| 描述： | Dual Common-Cathode High-Voltage Schottky Rectifier |
| 文件： | 总5页 (文件大小：129K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MBR10H150CT, MBRF10H150CT & SB10H150CT-1
Vishay General Semiconductor
Dual Common-Cathode High-Voltage Schottky Rectifier
Low Leakage Current 5.0 µA
FEATURES
TO-220AB
ITO-220AB
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High frequency operation
3
3
• Solder dip 260 °C, 40 s
2
2
1
1
MBRF10H150CT
TO-262AA
MBR10H150CT
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling and
polarity protection applications.
3
2
1
MECHANICAL DATA
SB10H150CT-1
PIN 1
PIN 3
PIN 2
CASE
Case: TO-220AB, ITO-220AB, TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
VF
2 x 5 A
150 V
160 A
0.72 V
175 °C
Mounting Torque: 10 in-lbs maximum
Polarity: As marked
TJ
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
C
PARAMETER
SYMBOL
MBR10H150CT
UNIT
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
VRRM
150
150
150
V
V
V
VRWM
VDC
total device
Maximum average forward rectified current (Fig. 1)
per diode
10
5
IF(AV)
A
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
160
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz
Peak non-repetitive reverse surge energy per diode (8/20 µs waveform)
Non-repetitive avalanche energy per diode at 25 °C, IAS = 1.5 A, L = 10 mH
Voltage rate of change (rated VR)
IRRM
ERSM
EAS
1.0
10
A
mJ
mJ
V/µs
°C
11.25
dV/dt
TJ, TSTG
VAC
10 000
- 65 to + 175
1500
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only) from terminals to heatsink t = 1 min
V
Document Number: 88779
Revision: 18-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
MBR10H150CT, MBRF10H150CT & SB10H150CT-1
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
C
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
IF = 5.0 A
TJ = 25 °C
TJ = 125 °C
TJ = 25 °C
TJ = 125 °C
0.88
0.72
0.96
0.80
IF = 5.0 A
IF = 10 A
IF = 10 A
Maximum instantaneous forward voltage per
diode (1)
VF
V
TJ = 25 °C
TJ = 125 °C
5.0
1.0
Maximum reverse current per diode at
working peak reverse voltage (1)
µA
mA
IR
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
C
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
Typical thermal resistance per diode
RθJC
2.4
4.5
2.4
°C/W
ORDERING INFORMATION (Example)
PACKAGE
TO-220AB
ITO-220AB
TO-262AA
PREFERRED P/N
MBR10H150CT-E3/45
MBRF10H150CT-E3/45
SB10H150CT-1E3/45
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
50/tube
DELIVERY MODE
2.06
2.20
1.58
45
45
45
Tube
Tube
Tube
50/tube
50/tube
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
12
200
MBR, MBRB
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
180
160
140
120
100
80
10
8
MBRF
6
4
60
40
2
20
0
0
1
25
50
75
100
125
150
175
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Forward Derating Curve (Total)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88779
Revision: 18-Apr-08
MBR10H150CT, MBRF10H150CT & SB10H150CT-1
Vishay General Semiconductor
100
10
10 000
1000
TJ = 175 °C
TJ = 125 °C
TJ = 75 °C
100
1
TJ = 25 °C
10
0.1
0.1
1
10
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
Figure 5. Typical Junction Capacitance Per Diode
10 000
100
TJ = 175 °C
1000
TJ = 125 °C
10
100
MBRF
10
MBR, MBRB
TJ = 75 °C
1
1
TJ = 25 °C
0.1
0.1
0.01
0.01
0.1
1
10
100
10
20
30
40
50
60
70
80
90 100
t - Pulse Duration (s)
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
Figure 6. Typical Transient Thermal Impedance Per Diode
Document Number: 88779
Revision: 18-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
MBR10H150CT, MBRF10H150CT & SB10H150CT-1
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
ITO-220AB
0.193 (4.90)
0.177 (4.50)
0.108 (2.74)
0.092 (2.34)
0.398 (10.10)
0.382 (9.70)
0.185 (4.70)
0.169 (4.30)
0.408 (10.36)
0.392 (9.96)
1.29 (3.28)
1.21 (3.08)
0.150 (3.80)
0.139 (3.54)
DIA.
0.114 (2.90)
0.106 (2.70)
0.055 (1.40)
0.047 (1.20)
DIA.
0.343 (8.70)
TYP.
0.055 (1.40)
0.049 (1.25)
0.138 (3.50)
0.122 (3.10)
0.270 (6.88)
0.255 (6.48)
0.154 (3.90)
0.138 (3.50)
0.067 (1.70)
TYP.
0.638 (16.20)
0.598 (15.20)
0.331 (8.40)
TYP.
0.633 (16.07)
0.601 (15.67)
0.634 (16.10)
0.618 (15.70)
0.370 (9.40)
0.354 (9.00)
0.630 (16.00)
0.614 (15.60)
0.320 (8.12)
0.304 (7.72)
PIN
2
1.161 (29.48)
1.106 (28.08)
0.264 (6.70)
0.248 (6.50)
1
3
PIN
2
0.118 (3.00)
1
3
0.102 (2.60)
TYP.
0.087 (2.20)
0.523 (13.28)
0.507 (12.88)
0.117 (2.96)
0.101 (2.56)
0.035 (0.90)
0.028 (0.70)
0.396 (10.05)
0.372 (9.45)
0.064 (1.62)
0.056 (1.42)
0.100 (2.54)
TYP.
0.024 (0.60)
0.018 (0.45)
0.039 (1.00)
0.024 (0.60)
0.200 (5.08) TYP.
0.058 (1.47) MAX.
0.200 (5.08) TYP.
0.024 (0.60)
0.018 (0.45)
0.100
(2.54) TYP.
TO-262AA
0.185 (4.70)
0.169 (4.30)
0.398 (10.10)
0.382 (9.70)
0.055 (1.40)
0.039 (1.00)
0.055 (1.40)
0.049 (1.25)
K
0.425 (10.80)
0.393 (10.00)
0.370 (9.40)
0.354 (9.00)
PIN
2
0.488 (12.4)
0.472 (12.00)
1
3
0.102 (2.60)
0.087 (2.20)
0.523 (13.28)
0.507 (12.88)
0.405 (10.28)
0.389 (9.88)
0.035 (0.90)
0.028 (0.70)
0.062 (1.57)
0.054 (1.37)
0.024 (0.60)
0.018 (0.45)
0.100
(2.54) TYP.
0.200 (5.08) TYP.
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For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88779
Revision: 18-Apr-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
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products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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MBR10H150CTE3
DIODE 5 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3, Rectifier Diode
VISHAY
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