MB2S_13 [VISHAY]

Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier;
MB2S_13
型号: MB2S_13
厂家: VISHAY    VISHAY
描述:

Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier

文件: 总3页 (文件大小:76K)
中文:  中文翻译
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MB2S, MB4S, MB6S  
Vishay General Semiconductor  
www.vishay.com  
Miniature Glass Passivated Fast Recovery  
Surface Mount Bridge Rectifier  
FEATURES  
• UL recognition, file number E54214  
~
• Saves space on printed circuit boards  
• Ideal for automated placement  
• High surge current capability  
~
• Meets MSL level 1, per J-STD-020, LF maximum  
peak of 260 °C  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
~
~
TYPICAL APPLICATIONS  
General purpose use in AC/DC bridge full wave rectification  
for power supply, lighting ballaster, battery charger, home  
appliances, office equipment, and telecommunication  
applications.  
TO-269AA (MBS)  
MECHANICAL DATA  
PRIMARY CHARACTERISTICS  
Package  
TO-269AA (MBS)  
Case: TO-269AA (MBS)  
IF(AV)  
0.5 A  
200 V, 400 V, 600 V  
35 A  
Molding compound meets UL 94 V-0 flammability rating  
Base P/N-E3 - RoHS-compliant, commercial grade  
VRRM  
IFSM  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
IR  
5 μA  
E3 suffix meets JESD 201 class 1A whisker test  
VF at IF = 0.4 A  
TJ max.  
Diode variations  
1.0 V  
150 °C  
Polarity: As marked on body  
Quad  
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
MB2S  
2
MB4S  
4
MB6S  
6
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
0.5  
600  
420  
600  
V
V
V
Maximum DC blocking voltage  
on glass-epoxy PCB (1)  
on aluminum substrate (2)  
Maximum average forward output  
rectified current (fig. 1)  
IF(AV)  
A
0.8  
Peak forward surge current 8.3 ms single half sine-wave  
superimposed on rated load  
IFSM  
35  
A
Rating for fusing (t < 8.3 ms)  
I2t  
5.0  
A2s  
°C  
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
Notes  
(1)  
On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads  
On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad  
(2)  
Revision: 19-Aug-13  
Document Number: 88661  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
MB2S, MB4S, MB6S  
Vishay General Semiconductor  
www.vishay.com  
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
TEST CONDITIONS SYMBOL  
MB2S  
MB4S  
MB6S  
UNIT  
Maximum instantaneous forward  
voltage per diode  
IF = 0.4 A  
VF  
1.0  
V
TA = 25 °C  
5.0  
100  
13  
Maximum DC reverse current at rated DC blocking  
voltage per diode  
IR  
μA  
pF  
TA = 125 °C  
4.0 V, 1 MHz  
Typical junction capacitance per diode  
CJ  
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)  
PARAMETER  
SYMBOL  
MB2S  
MB4S  
MB6S  
UNIT  
(1)  
RJA  
85  
70  
20  
(2)  
Typical thermal resistance  
RJA  
°C/W  
(1)  
RJL  
Notes  
(1)  
On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads  
On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad  
(2)  
ORDERING INFORMATION (Example)  
PREFERRED P/N  
UNIT WEIGHT (g)  
PREFERRED PACKAGE CODE  
BASE QUANTITY  
DELIVERY MODE  
Tube  
MB2S-E3/45  
0.22  
0.22  
45  
80  
100  
MB2S-E3/80  
3000  
13" diameter paper tape and reel  
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0
35  
30  
25  
20  
15  
10  
5
TA = 40 °C  
Single Half Sine-Wave  
Aluminum Substrate  
f = 50 Hz  
f = 60 Hz  
Glass  
Epoxy  
PCB  
Resistive or Inductive Load  
1.0 Cycle  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
1
10  
Number of Cycles  
100  
Ambient Temperature (°C)  
Fig. 1 - Derating Curve for Output Rectified Current  
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge  
Current Per Diode  
Revision: 19-Aug-13  
Document Number: 88661  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
MB2S, MB4S, MB6S  
Vishay General Semiconductor  
www.vishay.com  
10  
30  
25  
20  
15  
10  
5
TJ = 25 °C  
f = 1.0 MHz  
Vsig = 50 mV  
TJ = 150 °C  
p-p  
TJ = 25 °C  
1
0.1  
Pulse Width = 300 µs  
1 % Duty Cycle  
0.01  
0
0.3  
0.5  
0.7  
0.9  
1.1  
1.3  
1.5  
0.1  
10  
Reverse Voltage (V)  
100  
1000  
1
Instantaneous Forward Voltage (V)  
Fig. 3 - Typical Forward Voltage Characteristics Per Diode  
Fig. 5 - Typical Junction Capacitance Per Diode  
100  
TJ = 125 °C  
10  
1
0.1  
TJ = 25 °C  
0.01  
20  
Percent of Rated Peak Reverse Voltage (%)  
0
40  
60  
80  
100  
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode  
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)  
TO-269AA (MBS)  
0.029 (0.74)  
0.017 (0.43)  
Mounting Pad Layout  
0.023 MIN.  
(0.58 MIN.)  
0.161 (4.10)  
0.144 (3.65)  
0.272 (6.90)  
0.252 (6.40)  
0.272 MAX.  
(6.91 MAX.)  
0.030 MIN.  
(0.76 MIN.)  
0.105 (2.67)  
0.095 (2.41)  
0.195 (4.95)  
0.179 (4.55)  
0.205 (5.21)  
0.195 (4.95)  
0 to 8°  
0.105 (2.67)  
0.095 (2.41)  
0.049 (1.24)  
0.039 (0.99)  
0.062 (1.57)  
0.106 (2.70)  
0.090 (2.30)  
0.058 (1.47)  
0.008 (0.20)  
0.004 (0.10) 0.006 (0.15)  
0.114 (2.90)  
0.110 (2.80)  
0.058 (1.47)  
0.054 (1.37)  
0.016 (0.41)  
0.0075 (0.19)  
0.0065 (0.16)  
0.114 (2.90)  
0.094 (2.40)  
0.018 (0.46)  
0.014 (0.36)  
0.038 (0.96)  
0.019 (0.48)  
Revision: 19-Aug-13  
Document Number: 88661  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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