MB2S_13 [VISHAY]
Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier;型号: | MB2S_13 |
厂家: | VISHAY |
描述: | Miniature Glass Passivated Fast Recovery Surface Mount Bridge Rectifier |
文件: | 总3页 (文件大小:76K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MB2S, MB4S, MB6S
Vishay General Semiconductor
www.vishay.com
Miniature Glass Passivated Fast Recovery
Surface Mount Bridge Rectifier
FEATURES
• UL recognition, file number E54214
~
• Saves space on printed circuit boards
• Ideal for automated placement
• High surge current capability
~
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
~
~
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for power supply, lighting ballaster, battery charger, home
appliances, office equipment, and telecommunication
applications.
TO-269AA (MBS)
MECHANICAL DATA
PRIMARY CHARACTERISTICS
Package
TO-269AA (MBS)
Case: TO-269AA (MBS)
IF(AV)
0.5 A
200 V, 400 V, 600 V
35 A
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
VRRM
IFSM
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
IR
5 μA
E3 suffix meets JESD 201 class 1A whisker test
VF at IF = 0.4 A
TJ max.
Diode variations
1.0 V
150 °C
Polarity: As marked on body
Quad
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MB2S
2
MB4S
4
MB6S
6
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
200
140
200
400
280
400
0.5
600
420
600
V
V
V
Maximum DC blocking voltage
on glass-epoxy PCB (1)
on aluminum substrate (2)
Maximum average forward output
rectified current (fig. 1)
IF(AV)
A
0.8
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
35
A
Rating for fusing (t < 8.3 ms)
I2t
5.0
A2s
°C
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
Notes
(1)
On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad
(2)
Revision: 19-Aug-13
Document Number: 88661
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MB2S, MB4S, MB6S
Vishay General Semiconductor
www.vishay.com
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL
MB2S
MB4S
MB6S
UNIT
Maximum instantaneous forward
voltage per diode
IF = 0.4 A
VF
1.0
V
TA = 25 °C
5.0
100
13
Maximum DC reverse current at rated DC blocking
voltage per diode
IR
μA
pF
TA = 125 °C
4.0 V, 1 MHz
Typical junction capacitance per diode
CJ
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MB2S
MB4S
MB6S
UNIT
(1)
RJA
85
70
20
(2)
Typical thermal resistance
RJA
°C/W
(1)
RJL
Notes
(1)
On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads
On aluminum substrate PCB with an area of 0.8" x 0.8" (20 mm x 20 mm) mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) solder pad
(2)
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
Tube
MB2S-E3/45
0.22
0.22
45
80
100
MB2S-E3/80
3000
13" diameter paper tape and reel
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
35
30
25
20
15
10
5
TA = 40 °C
Single Half Sine-Wave
Aluminum Substrate
f = 50 Hz
f = 60 Hz
Glass
Epoxy
PCB
Resistive or Inductive Load
1.0 Cycle
0
0
20
40
60
80
100
120
140
160
1
10
Number of Cycles
100
Ambient Temperature (°C)
Fig. 1 - Derating Curve for Output Rectified Current
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Revision: 19-Aug-13
Document Number: 88661
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
MB2S, MB4S, MB6S
Vishay General Semiconductor
www.vishay.com
10
30
25
20
15
10
5
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mV
TJ = 150 °C
p-p
TJ = 25 °C
1
0.1
Pulse Width = 300 µs
1 % Duty Cycle
0.01
0
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0.1
10
Reverse Voltage (V)
100
1000
1
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Forward Voltage Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
TJ = 125 °C
10
1
0.1
TJ = 25 °C
0.01
20
Percent of Rated Peak Reverse Voltage (%)
0
40
60
80
100
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-269AA (MBS)
0.029 (0.74)
0.017 (0.43)
Mounting Pad Layout
0.023 MIN.
(0.58 MIN.)
0.161 (4.10)
0.144 (3.65)
0.272 (6.90)
0.252 (6.40)
0.272 MAX.
(6.91 MAX.)
0.030 MIN.
(0.76 MIN.)
0.105 (2.67)
0.095 (2.41)
0.195 (4.95)
0.179 (4.55)
0.205 (5.21)
0.195 (4.95)
0 to 8°
0.105 (2.67)
0.095 (2.41)
0.049 (1.24)
0.039 (0.99)
0.062 (1.57)
0.106 (2.70)
0.090 (2.30)
0.058 (1.47)
0.008 (0.20)
0.004 (0.10) 0.006 (0.15)
0.114 (2.90)
0.110 (2.80)
0.058 (1.47)
0.054 (1.37)
0.016 (0.41)
0.0075 (0.19)
0.0065 (0.16)
0.114 (2.90)
0.094 (2.40)
0.018 (0.46)
0.014 (0.36)
0.038 (0.96)
0.019 (0.48)
Revision: 19-Aug-13
Document Number: 88661
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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