J305-TR3 [VISHAY]
Transistor;
| 型号： | J305-TR3 |
| 厂家： | 
VISHAY |
| 描述： | Transistor |
| 文件： | 总7页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
J304/305
Vishay Siliconix
N-Channel JFETs
PRODUCT SUMMARY
Part Number
VGS(off) (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA)
J304
J305
−2 to −6
−30
−30
4.5
3
5
1
−0.5 to −3
FEATURES
BENEFITS
APPLICATIONS
D Excellent High Frequency Gain: J304,
D Wideband High Gain
D High-Frequency Amplifier/Mixer
D Oscillator
Gps 11 dB (typ) @ 400 MHz
D Very High System Sensitivity
D High Quality of Amplification
D Very Low Noise: 3.8 dB (typ) @
D Sample-and-Hold
400 MHz
D High-Speed Switching Capability
D High Low-Level Signal Amplification
D Very Low Capacitance Switches
D Very Low Distortion
D High ac/dc Switch Off-Isolation
D High Gain: AV = 60 @ 100 mA
DESCRIPTION
The J304/305 n-channel JFETs provide high-performance
amplification, especially at high-frequency. These products
are available in tape and reel for automated assembly (see
Package Information).
For similar products in TO-236 (SOT-23) packages, see the
2N/SST5484 series data sheet, or in TO-206AF (TO-72)
packages, see the 2N/SST4416 series data sheet.
TO-226AA
(TO-92)
1
2
3
S
D
G
Top View
ABSOLUTE MAXIMUM RATINGS
1
Lead Temperature ( / ” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Gate-Source/Gate-DrainVoltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −30 V
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to 150_C
16
a
Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
Document Number: 70236
S-50077—Rev. E, 24-Jan-05
www.vishay.com
1
J304/305
Vishay Siliconix
SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits
J304
J305
Typa
Unit
Min Max Min Max
Parameter
Symbol
Test Conditions
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
V
I
= −1 mA , V = 0 V
−35
V
V
−30
−30
(BR)GSS
G
DS
V
V
= 15 V, I = 1 nA
−3
8
−2
−6
15
−0.5
GS(off)
DS
D
b
Saturation Drain Current
I
mA
pA
nA
V
= 15 V, V = 0 V
GS
5
1
DSS
DS
V
= −20 V, V = 0 V
−2
−0.2
−20
2
−100
−100
GS
DS
Gate Reverse Current
I
GSS
T
A
= 100_C
b
Gate Operating Current
I
G
V
= 10 V, I = 1 mA
DG
D
pA
Drain Cutoff Current
I
V
= 10 V, V = −6 V
DS GS
D(off)
Drain-Source On-Resistance
Gate-Source Forward Voltage
r
V
= 0 V, I = 300 mA
200
0.7
W
DS(on)
GS
D
V
V
I
G
= 1 mA , V = 0 V
GS(F)
DS
Dynamic
Common-Source
g
7.5
50
mS
4.5
3
fs
Forward Transconductance
V
= 15 V, V = 0 V, f = 1 kHz
GS
DS
Common-Source
Output Conductance
g
os
mS
50
Common-Source Input Capacitance
C
2.2
0.7
iss
Common-Source
Reverse Transfer Capacitance
C
rss
V
= 15 V, V = 0 V
GS
f = 1 MHz
DS
pF
Common-Source
Output Capacitance
C
oss
1
V
= 10 V, V = 0 V
GS
f = 100 Hz
nV⁄
√Hz
DS
Equivalent Input Noise Voltage
e
n
10
TYPICAL HIGH-FREQUENCY SPECIFICATIONS (T = 25_C UNLESS OTHERWISE NOTED)
A
Limits (Typ)
J304
J305
100
400
100
400
MHz MHz MHz MHz
Parameter
High-Frequency
Symbol
Test Conditions
Unit
Common-Source Input Conductance
Common-Source Input Susceptance
Common-Source Output Conductance
Common-Source Output Susceptance
Common-Source Forward Transconductance
Common-Source Power Gain
g
80
2
800
7.5
80
80
2
mS
mS
mS
V
= 15 V, V = 0 V
GS
iss
DS
DS
b
iss
oss
oss
g
b
60
0.8
4.4
20
1.7
60
0.8
3
V
= 15 V, V = 0 V
GS
3.6
4.2
11
mS
dB
g
fs
G
V
= 15 V, I = 5 mA
D
ps
DS
Noise Figure
NF
R
G
= 1 kW
3.8
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
NH
b. Pulse test: PW v300 ms, duty cycle v2%.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 70236
S-50077—Rev. E, 24-Jan-05
www.vishay.com
2
J304/305
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
10
50
20
500
r
DS @ ID = 300 mA, VGS = 0 V
g
os @ VDS = 10 V, VGS = 0 V
IDSS
8
40
f = 1 kHz
16
400
rDS
6
4
30
20
g
fs
12
8
300
200
gos
IDSS @ VDS = 10 V, VGS = 0 V
2
0
10
0
4
0
100
0
g
@ VDS = 10 V, VGS = 0 V
fs
f = 1 kHz
0
−2
−4
−6
−8
−10
0
−2
−4
−6
−8
−10
V
GS(off) − Gate-Source Cutoff Voltage (V)
VGS(off) − Gate-Source Cutoff Voltage (V)
Common-Source Forward Transconductance
vs. Drain Current
Gate Leakage Current
10
8
100 nA
10 nA
VGS(off) = −3 V
VDS = 10 V
f = 1 kHz
5 mA
1 mA
0.1 mA
T
= 125_C
1 nA
100 pA
10 pA
1 pA
A
T
A
= −55_C
125_C
6
4
2
0
IGSS
@
125_C
25_C
5 mA
1 mA
0.1 mA
T
A
= 25_C
IGSS @ 25_C
0.1 pA
0.1
1
10
0
4
8
12
16
20
V
DG − Drain-Gate Voltage (V)
ID − Drain Current (mA)
Output Characteristics
Output Characteristics
10
8
15
12
VGS(off) = −2 V
VGS(off) = −3 V
VGS = 0 V
V
= 0 V
GS
−0.3 V
−0.2 V
−0.4 V
−0.6 V
6
4
9
6
−0.6 V
−0.9 V
−1.2 V
−1.5 V
−0.8 V
−1.0 V
−1.2 V
2
0
3
0
−1.8 V
−1.4 V
0
2
4
6
8
10
0
2
4
6
8
10
V
DS − Drain-Source Voltage (V)
VDS − Drain-Source Voltage (V)
Document Number: 70236
S-50077—Rev. E, 24-Jan-05
www.vishay.com
3
J304/305
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Transfer Characteristics
Transfer Characteristics
10
10
VGS(off) = −2 V
VDS = 10 V
V
= −3 V
V
= 10 V
DS
GS(off)
8
8
T
A
= −55_C
T
= −55_C
A
25_C
6
4
6
4
25_C
125_C
125_C
2
0
2
0
0
−0.4
−0.8
−1.2
−1.6
−2
−2
10
0
−0.6
−1.2
−1.8
−2.4
−3
V
GS − Gate-Source Voltage (V)
V
− Gate-Source Voltage (V)
GS
Transconductance vs. Gate-Source Voltage
Transconductance vs. Gate-Source Voltgage
10
8
10
8
VGS(off) = −2 V
VDS = 10 V
f = 1 kHz
VGS(off) = −3 V
V
= 10 V
DS
f = 1 kHz
T
= −55_C
A
T
A
= −55_C
6
4
6
4
25_C
25_C
125_C
125_C
2
0
2
0
0
−0.4
−0.8
−1.2
−1.6
0
−0.6
−1.2
−1.8
−2.4
−3
V
GS − Gate-Source Voltage (V)
V
GS − Gate-Source Voltage (V)
On-Resistance vs. Drain Current
Circuit Voltage Gain vs. Drain Current
300
240
100
80
g
R
L
T
A
= 25_C
fs
A
+
V
1 ) R g
os
L
Assume VDD = 15 V, VDS = 5 V
10 V
VGS(off) = −2 V
R
+
I
L
D
180
120
60
40
VGS(off) = −3 V
VGS(off) = −2 V
60
0
20
0
VGS(off) = −3 V
0.1
1
0.1
1
10
ID − Drain Current (mA)
ID − Drain Current (mA)
Document Number: 70236
S-50077—Rev. E, 24-Jan-05
www.vishay.com
4
J304/305
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Common-Source Input Capacitance
vs. Gate-Source Voltage
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
5
3
f = 1 MHz
f = 1 MHz
4
2.4
3
2
1.8
VDS = 0 V
VDS = 0 V
1.2
VDS = 10 V
VDS = 10 V
1
0
0.6
0
0
−4
−8
−12
−16
−20
0
−4
−8
−12
−16
−20
V
GS − Gate-Source Voltage (V)
V
GS − Gate-Source Voltage (V)
Input Admittance
Forward Admittance
100
10
100
10
T
V
V
= 25_C
DS = 15 V
GS = 0 V
T
V
V
= 25_C
DS = 15 V
GS = 0 V
A
A
Common Source
Common Source
b
is
g
fs
g
is
−b
fs
1
1
0.1
0.1
100
1000
100
200
500
1000
200
500
f − Frequency (MHz)
f − Frequency (MHz)
Reverse Admittance
Output Admittance
10
10
T
V
V
= 25_C
DS = 15 V
GS = 0 V
A
b
os
−b
rs
Common Source
1
1
g
os
−g
rs
0.1
0.1
T
V
V
= 25_C
A
DS = 15 V
GS = 0 V
Common Source
0.01
0.01
100
1000
100
1000
200
500
200
500
f − Frequency (MHz)
f − Frequency (MHz)
Document Number: 70236
S-50077—Rev. E, 24-Jan-05
www.vishay.com
5
J304/305
Vishay Siliconix
TYPICAL CHARACTERISTICS (T = 25_C UNLESS OTHERWISE NOTED)
A
Equivalent Input Noise Voltage vs. Frequency
Output Conductance vs. Drain Current
20
16
20
16
VGS(off) = −3 V
VDS = 10 V
T
A
= −55_C
12
8
12
8
25_C
125_C
ID = 5 mA
4
0
4
0
VDS = 10 V
f = 1 kHz
VGS = 0 V
10
100
1 k
10 k
100 k
0.1
1
10
f − Frequency (Hz)
I − Drain Current (mA)
D
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?70236.
Document Number: 70236
S-50077—Rev. E, 24-Jan-05
www.vishay.com
6
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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