IRKH91/12PBF [VISHAY]
Silicon Controlled Rectifier, 210A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-240AA, LEAD FREE, ADD-A-PAK-5;
| 型号： | IRKH91/12PBF |
| 厂家： | 
VISHAY |
| 描述： | Silicon Controlled Rectifier, 210A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-240AA, LEAD FREE, ADD-A-PAK-5 局域网 栅 栅极 |
| 文件： | 总11页 (文件大小：311K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Bulletin I27211 03/06
IRK.71, .91..PbF SERIES
ADD-A-pakTM GEN V Power Modules
THYRISTOR/ DIODE and
THYRISTOR/ THYRISTOR
Features
Benefits
High Voltage
Up to 1600V
IndustrialStandardPackage
Thickcopperbaseplate
UL E78996 approved
3500VRMS isolatingvoltage
TOTALLYLEAD-FREE
Full compatible TO-240AA
High Surge capability
Easy Mounting on heatsink
Al203 DBC insulator
Heatsink grounded
75 A
95 A
Mechanical Description
Theelectricalterminalsaresecuredagainstaxialpull-out:
they are fixed to the module housing via a click-stop
feature already tested and proved as reliable on other IR
modules.
The Generation V of Add-A-pak module combine the
excellent thermal performance obtained by the usage
of Direct Bonded Copper substrate with superior
mechanical ruggedness, thanks to the insertion of a
solidCopperbaseplateatthebottomsideofthedevice.
The Cu baseplate allow an easier mounting on the
majority of heatsink with increased tolerance of surface
roughness and improve thermal spread.
Electrical Description
These modules are intended for general purpose high
voltageapplicationssuchashighvoltageregulatedpower
supplies, lighting circuits, temperature and motor speed
control circuits, UPS and battery charger.
The Generation V of AAP module is manufactured
without hard mold, eliminating in this way any possible
direct stress on the leads.
Major Ratings and Characteristics
Parameters IRK.71
IRK.91
Units
IT(AV)or IF(AV)
75
95
A
A
@85°C
IO(RMS) (*)
165
210
ITSM @50Hz
IFSM @60Hz
1665
1740
1785
1870
A
A
2
2
I t @50Hz
13.86
15.91
KA s
2
@60Hz
12.56
138.6
14.52
159.1
KA s
2
2
I √t
KA √s
VRRM range
TSTG
400to1600
V
- 40 to 125
-40to125
oC
oC
TJ
(*) As AC switch.
Document Number: 94421
www.vishay.com
1
IRK.71, .91 Series
Bulletin I27211 03/06
ELECTRICAL SPECIFICATIONS
Voltage Ratings
VRRM , maximum
repetitive
VRSM , maximum
non-repetitive
VDRM , max. repetitive
peak off-state voltage,
gate open circuit
IRRM
Voltage
IDRM
Type number
Code
peak reverse voltage peak reverse voltage
125°C
-
V
400
600
800
V
500
700
900
V
400
600
800
mA
04
06
08
IRK.71/ .91
10
12
14
16
1000
1200
1400
1600
1100
1300
1500
1700
1000
1200
1400
1600
15
On-state Conduction
Parameters
IT(AV) Max. average on-state
current (Thyristors)
IF(AV) Max. average forward
current (Diodes)
IRK.71
75
IRK.91
Units
Conditions
180o conduction, half sine wave,
TC=85oC
95
IO(RMS Max. continuous RMS
)
on-state current.
As AC switch
165
210
or
I(RMS)
I(RMS)
A
ITSM
or
IFSM
Max.peak, one cycle
non-repetitive on-state
or forward current
1665
1740
1400
1470
1850
1940
13.86
12.56
9.80
1785
1870
1500
1570
2000
2100
15.91
14.52
11.25
10.27
20.00
18.30
159.1
t=10ms No voltage
Sinusoidal
half wave,
InitialTJ =TJ max.
t=8.3ms reapplied
t=10ms 100%VRRM
t=8.3ms reapplied
t=10ms TJ =25oC,
t=8.3ms no voltage reapplied
t=10ms No voltage
I2t
Max. I2t for fusing
t=8.3ms reapplied
InitialTJ =TJ max.
t=10ms 100%VRRM
KA2s
8.96
t=8.3ms reapplied
t=10ms TJ =25oC,
17.11
15.60
138.6
t= 8.3ms no voltage reapplied
t=0.1 to 10ms, no voltage reapplied,TJ = TJ max
I2√t
Max. I2√t for fusing (1)
KA2√s
VT(TO) Max. value of threshold
voltage (2)
0.82
0.85
3.00
0.80
0.85
2.40
Low level (3)
High level (4)
Low level (3)
TJ = TJ max
V
r
Max. value of on-state
t
TJ = TJ max
mΩ
slope resistance (2)
Max. peak on-state or
2.90
2.25
High level (4)
ITM= π xIT(AV)
VTM
VFM
TJ = 25°C
1.59
1.58
V
forward voltage
IFM=πxIF(AV)
di/dt Max. non-repetitive rate
TJ = 25oC, from 0.67 VDRM
,
of rise of turned on
current
150
250
400
A/µs
mA
I
TM =π x IT(AV), I = 500mA,
g
t < 0.5 µs, t > 6 µs
TJ = 25oC, anode supply = 6V,
resistive load, gate open circuit
TJ =25oC,anode supply=6V, resistive load
r
p
IH
IL
Max. holding current
Max. latching current
2
(1) I2t for time tx = I2√t x √tx
(4) I > π x IAV
(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS)
)
(3) 16.7% x π x IAV < I < π x IAV
Document Number: 94421
www.vishay.com
2
IRK.71, .91 Series
Bulletin I27211 03/06
Triggering
Parameters
IRK.71
12
IRK.91
12
Units
Conditions
PGM Max. peak gate power
W
A
PG(AV) Max. average gate power
3.0
3.0
IGM
Max. peak gate current
3.0
3.0
-VGM Max. peak negative
gate voltage
10
VGT Max. gate voltage
required to trigger
4.0
2.5
1.7
270
150
80
TJ =-40°C
TJ =25°C
TJ =125°C
TJ =-40°C
TJ =25°C
TJ =125°C
TJ=125oC,
rated VDRM applied
TJ=125oC,
rated VDRM applied
V
Anode supply=6V
resistive load
IGT
Max. gate current
required to trigger
Anode supply=6V
resistive load
mA
VGD Max. gate voltage
that will not trigger
0.25
6
V
IGD
Max. gate current
that will not trigger
mA
Blocking
Parameters
IRK.71
IRK.91
Units
mA
Conditions
IRRM Max. peak reverse and
IDRM off-state leakage current
at VRRM, VDRM
15
TJ = 125 oC, gate open circuit
2500 (1 min)
3500 (1 sec)
50 Hz, circuit to base, all terminals
shorted
VINS RMS isolation voltage
V
dv/dt Max. critical rate of rise
of off-state voltage (5)
TJ = 125oC, linear to 0.67 VDRM
gate open circuit
,
500
V/µs
(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT91/16AS90.
Thermal and Mechanical Specifications
Parameters
IRK.71
IRK.91
Units
°C
Conditions
TJ
Junction operating
temperature range
Storage temp. range
- 40 to 125
-40to125
T
stg
RthJC Max. internal thermal
resistance, junction
to case
RthCS Typical thermal resistance
case to heatsink
0.165
0.135
Per module, DC operation
K/W
Mounting surface flat, smooth and greased
0.1
5
A mounting compound is recommended
and the torque should be rechecked after
a period of 3 hours to allow for the
spread of the compound
T
Mounting torque ± 10%
to heatsink
Nm
busbar
3
wt
Approximate weight
110(4)
gr(oz)
Case style
TO-240AA
JEDEC
∆R Conduction (per Junction)
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Sine half wave conduction
Rect. wave conduction
Devices
Units
°C/W
180o
0.06
0.04
120o
0.07
0.05
90o
60o
0.12
0.08
30o
0.18
0.12
180o
0.04
0.03
120o
0.08
0.05
90o
0.10
0.06
60o
0.13
0.08
30o
0.18
0.12
IRK.71
IRK.91
0.09
0.06
Document Number: 94421
www.vishay.com
3
IRK.71, .91 Series
Bulletin I27211 03/06
Ordering Information Table
Device Code
IRK.92 types
IRK
T
91
/
16 S90
P
With no auxiliary cathode
1
5
6
2
3
4
1
2
3
4
5
-
-
-
-
-
Module type
Circuit configuration (See Circuit Configuration table below)
Current code * *
Voltage code (See Voltage Ratings table)
* * Available with no auxiliary cathode.
To specify change:
71 to 72
91 to 92
dv/dtcode:
S90 = dv/dt 1000 V/µs
e.g. : IRKT92/16P etc.
No letter = dv/dt 500 Vµs
6
6
-
P = Lead-Free
Outline Table
Dimensions are in millimeters and [inches]
IRKN
IRKT
IRKH
IRKL
(1)
(1)
(1)
(1)
~
-
~
~
+
+
+
+
(2)
(3)
(2)
(2)
(2)
-
(3)
+
-
-
(3)
(3)
G1 K1
(4) (5)
G1
K2 G2
(7) (6)
K1
G1 K1
(4) (5)
K2 G2
(7)
(4) (5)
(6)
NOTE: To order the Optional Hardware see Bulletin I27900
Document Number: 94421
www.vishay.com
4
IRK.71, .91 Series
Bulletin I27211 03/06
130
120
110
100
90
130
120
110
100
90
IRK.71.. Series
thJC
IRK.71.. Series
R
(DC) = 0.33 K/W
RthJC (DC) = 0.33 K/W
Conduction Period
Cond uction Angle
30°
30°
60°
60°
90°
120°
90°
80
80
180°
120°
DC
180°
80
70
70
0
10 20 30 40 50 60 70 80
Average On-state Current (A)
0
20
40
60
100 120
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Fig. 1 - Current Ratings Characteristics
120
100
80
60
40
20
0
140
120
100
80
DC
180°
120°
90°
180°
120°
90°
60°
60°
30°
30°
RMS Lim it
RM S Lim it
60
Conduction Period
Conduction Angle
40
IRK.71.. Series
Pe r Ju nc t io n
T = 125°C
J
IRK.71.. Series
Per Junc t io n
T = 125°C
J
20
0
0
10 20 30 40 50 60 70 80
Average On-state Current (A)
0
20
Average On-state Current (A)
Fig. 4 - On-state Power Loss Characteristics
40
60
80
100 120
Fig. 3 - On-state Power Loss Characteristics
1800
1600
1500
1400
1300
1200
1100
1000
900
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
At Any Rated Load Condition And With
Rated V
RRM
Applied Following Surge.
1600 Of Conduction May Not Be Maintained.
Initial T = 125°C
J
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
No Voltage Reapplied
1400
1200
1000
800
Rated V
Reapplied
RRM
IRK.71.. Series
Per Junction
IRK.71.. Series
Per Junction
800
700
600
1
10
100
0.01
0.1
Pulse Train Duration (s)
1
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Document Number: 94421
www.vishay.com
5
IRK.71, .91 Series
Bulletin I27211 03/06
250
200
150
100
180°
120°
90°
0
.
4
60°
K
/
W
W
30°
0
.
5
K
/
0
.
7
K
/
W
Conduction Angle
IRK.71.. Series
Pe r Mo d ule
J
50
T = 125 ° C
0
0
0
0
20 40 60 80 100 120 140 160 18
0
20 40
60 80 100 120 140
Maximum Allowable Ambient Temperature (°C)
To t a l RM S Output Current (A)
Fig. 7 - On-state Power Loss Characteristics
600
500
400
300
200
100
0
180°
(Sine)
180°
(Rect)
2 x IRK.71.. Series
Single Phase Bridge
Connected
1
K
/
W
T
= 125°C
J
20 40 60 80 100 120 140 160 1800 20 40
60 80 100 120 140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 8 - On-state Power Loss Characteristics
800
700
600
500
400
300
200
100
0
t
h
S
A
120°
(Rect)
0
.
2
K
/
W
3 x IRK.71.. Series
Th re e Pha se Brid g e
Connected
T = 125°C
J
40
80
120 160 200 240 20 40 60
80 100 120 140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 9 - On-state Power Loss Characteristics
Document Number: 94421
www.vishay.com
6
IRK.71, .91 Series
Bulletin I27211 03/06
130
120
110
100
90
130
120
110
100
90
IRK.91.. Series
thJC
IRK.91.. Series
thJC
R
(DC) = 0.27 K/W
R
(DC) = 0.27 K/W
Conduction Angle
Conduction Period
30°
30°
40
60°
60°
90°
120°
90°
120°
80
80
80
180°
100
DC
180°
70
70
0
20
60
0
20 40 60 80 100 120 140 160
Average On-state Current (A)
Average On-state Current (A)
Fig. 10 - Current Ratings Characteristics
Fig. 11 - Current Ratings Characteristics
140
120
100
80
180
160
140
120
100
80
180°
120°
90°
DC
180°
120°
90°
60°
30°
60°
30°
RMS Limit
RM S Lim it
60
Conduction Period
Conduction Angle
60
40
IRK.91.. Series
Pe r Ju nc t io n
T = 125°C
J
IRK.91.. Series
Pe r Ju nc t io n
T = 125°C
J
40
20
20
0
0
0
20
40
60
80
100
0
20 40 60 80 100 120 140 160
Average On-state Current (A)
Average On-state Current (A)
Fig. 12 - On-state Power Loss Characteristics
Fig. 13 - On-state Power Loss Characteristics
1600
1500
1400
1300
1200
1100
1000
900
1800
1600
1400
1200
1000
800
At Any Rated Load Condition And With
Maximum Non Repetitive Surge Current
VersusPulse Train Duration. Control
Of Conduction May Not Be Maintained.
Rated V
Applied Following Surge.
RRM
Initial T = 125°C
J
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
No Voltage Reapplied
Rated V
Reapplied
RRM
IRK.91.. Series
Per Junction
IRK.91.. Series
Per Junction
800
600
700
0.01
0.1
Pulse Train Duration (s)
1
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses(N)
Fig. 14 - Maximum Non-Repetitive Surge Current
Fig. 15 - Maximum Non-Repetitive Surge Current
Document Number: 94421
www.vishay.com
7
IRK.71, .91 Series
Bulletin I27211 03/06
350
300
250
200
R
t
h
180°
120°
90°
S
A
0
.
2
=
K
0
/
.
W
1
K
/
W
60°
-
D
30°
e
l
t
a
0
R
.
5
K
/
W
150
100
50
Conduction Angle
IRK.91.. Series
Per Mod ule
J
3
K
/
W
T = 1 25° C
0
0
40
80
120 160 200 24
0
20 40 60 80 100 120 140
Total RMSOutput Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 16 - On-state Power Loss Characteristics
600
500
400
300
200
100
0
R
t
180°
(Sine)
180°
h
S
A
=
0
.
1
(Rect)
K
/
W
0
.
2
-
K
D
/
W
e
l
t
a
R
0
.
5
K
/
W
2 x IRK.91.. Series
Single Phase Bridge
Connected
T
= 125°C
J
0
40
80
120
160
200 20
40 60 80 100 120 140
Total Output Current (A)
Maximum Allowable Ambient Temperature (°C)
Fig. 17 - On-state Power Loss Characteristics
900
800
700
600
500
400
300
200
100
0
t
h
S
A
120°
(Rect)
0
.
2
K
/
W
3 x IRK.91.. Series
0
.
5
K
/
W
Three Phase Bridge
Connected
1
K
/
W
TJ = 125°C
0
40 80 120 160 200 240 280 20 40
Total Output Current (A) Maximum Allowable Ambient Temperature (°C)
Fig. 18 - On-state Power Loss Characteristics
60 80 100 120 140
Document Number: 94421
www.vishay.com
8
IRK.71, .91 Series
Bulletin I27211 03/06
1000
100
10
1000
100
10
T = 25°C
J
T = 25 ° C
J
T = 125°C
J
T = 125°C
J
IRK.71.. Series
Per Junction
IRK.91.. Series
Per Junc tio n
1
1
0.5
1
1.5
InstantaneousOn-state Voltage (V)
Fig. 19 - On-state Voltage Drop Characteristics
2
2.5
3
3.5
4
0.5
1
1.5
InstantaneousOn-state Voltage (V)
Fig. 20 - On-state Voltage Drop Characteristics
2
2.5
3
3.5
700
600
500
400
300
200
100
140
IRK.71.. Series
IRK.91.. Series
J
I
= 200 A
100 A
TM
I
= 200 A
100 A
IRK.71.. Series
IRK.91.. Series
J
TM
120
100
80
T = 125 °C
T = 125 °C
50 A
50 A
20 A
10 A
20 A
10 A
60
40
20
10 20 30 40 50 60 70 80 90 100
10 20 30 40 50 60 70 80 90 100
Rate Of Fall Of Forward Current - di/dt (A/µs)
Rate Of Fall Of On-state Current - di/dt (A/µs)
Fig. 21 - Recovery Charge Characteristics
Fig. 22 - Recovery Current Characteristics
1
Steady State Value:
R
= 0.33 K/W
= 0.27 K/W
thJC
R
thJC
(DC Operation)
IRK.71.. Series
IRK.91.. Series
0.1
Per Ju nc t io n
0.01
0.001
0.01
0.1
Square Wave Pulse Duration (s)
Fig. 23 - Thermal Impedance ZthJC Characteristics
1
10
Document Number: 94421
www.vishay.com
9
IRK.71, .91 Series
Bulletin I27211 03/06
100
Rectangular gate pulse
(1) PGM = 200 W, tp = 300 µs
(2) PGM = 60 W, tp = 1 ms
(3) PGM = 30 W, tp = 2 ms
(4) PGM = 12 W, tp = 5 ms
a)Recommended load line for
rated di/ dt: 20 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30%rated di/ dt: 15 V, 40 ohms
tr =1 µs, tp >= 6 µs
10
1
(a)
(b)
(4) (3) (2)
(1)
VGD
IGD
IRK.71../.91.. Series Frequency Limited by PG(AV)
0.1 10 100 1000
0.1
0.001
0.01
1
InstantaneousGate Current (A)
Fig. 24 - Gate Characteristics
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial Level and Lead-Free.
Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7309
03/06
Document Number: 94421
www.vishay.com
10
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier®, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN®
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
Document Number: 99901
Revision: 12-Mar-07
www.vishay.com
1
相关型号：
IRKH91/12S90
Silicon Controlled Rectifier, 210A I(T)RMS, 90000mA I(T), 1200V V(DRM), 1200V V(RRM), 1 Element, TO-240AA
INFINEON
IRKH91/12S90PBF
Silicon Controlled Rectifier, 210A I(T)RMS, 1200V V(DRM), 1200V V(RRM), 1 Element, TO-240AA, LEAD FREE, ADD-A-PAK-5
VISHAY
IRKH91/14A
Silicon Controlled Rectifier, 210A I(T)RMS, 95000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, TO-240AA, POWER, ADD-A-PAK-5
VISHAY
IRKH91/14APBF
Silicon Controlled Rectifier, 149.15A I(T)RMS, 1400V V(DRM), 1400V V(RRM), 1 Element, TO-240AA, ADD-A-PAK-5
INFINEON
IRKH91/14AS90
Silicon Controlled Rectifier, 210A I(T)RMS, 95000mA I(T), 1400V V(DRM), 1400V V(RRM), 1 Element, TO-240AA, POWER, ADD-A-PAK-5
VISHAY
©2020 ICPDF网 联系我们和版权申明