IRFZ44R_11 [VISHAY]
Power MOSFET; 功率MOSFET
| 型号： | IRFZ44R_11 |
| 厂家： | 
VISHAY |
| 描述： | Power MOSFET |
| 文件： | 总9页 (文件大小：1292K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFZ44R, SiHFZ44R
Vishay Siliconix
Power MOSFET
FEATURES
• Advanced Process Technology
• Ultra Low On-Resistance
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
PRODUCT SUMMARY
VDS (V)
60
Available
RDS(on) (Ω)
VGS = 10 V
0.028
RoHS*
COMPLIANT
Qg (Max.) (nC)
67
18
Q
Q
gs (nC)
gd (nC)
• Fully Avalanche Rated
25
• Drop in Replacement of the IRFZ44, SiHFZ44 for
Linear/Audio Applications
Configuration
Single
• Compliant to RoHS Directive 2002/95/EC
D
DESCRIPTION
TO-220AB
Advanced Power MOSFETs from Vishay utilize advanced
processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry.
G
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
TO-220AB
IRFZ44RPbF
SiHFZ44R-E3
IRFZ44R
Lead (Pb)-free
SnPb
SiHFZ44R
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
VDS
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
60
V
VGS
20
Continuous Drain Currente
TC = 25 °C
C = 100 °C
50
VGS at 10 V
ID
T
36
200
A
Continuous Drain Current
Pulsed Drain Currenta
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
1.0
W/°C
mJ
EAS
PD
100
Maximum Power Dissipation
T
C = 25 °C
150
W
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
4.5
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)d
- 55 to + 175
300
°C
for 10 s
6-32 or M3 screw
10
lbf · in
N · m
Mounting Torque
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 25 V, starting TJ = 25 °C, L = 44 μH, Rg = 25 Ω, IAS = 51 A (see fig. 12).
c. ISD ≤ 51 A, dV/dt ≤ 250 A/μs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
e. Current limited by the package, (die current = 51 A).
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91292
S11-0517-Rev. B, 21-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ44R, SiHFZ44R
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
62
UNIT
Maximum Junction-to-Ambient
Case-to-Sink, Flat, Greased Surface
Maximum Junction-to-Case (Drain)
RthJA
RthCS
RthJC
-
0.50
-
-
°C/W
1.0
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
60
-
-
-
-
V
V/°C
V
VDS Temperature Coefficient
0.060
Gate-Source Threshold Voltage
Gate-Source Leakage
2.0
-
-
-
-
-
-
-
4.0
100
25
VGS
VDS = 60 V, VGS = 0 V
DS = 48 V, VGS = 0 V, TJ = 150 °C
VGS = 10 V
ID = 31 Ab
VDS = 25 V, ID = 31 Ab
=
20
nA
-
Zero Gate Voltage Drain Current
IDSS
μA
V
-
250
0.028
-
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
-
Ω
15
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
1900
920
170
-
-
-
VGS = 0 V,
VDS = 25 V,
pF
f = 1.0 MHz, see fig. 5
-
67
18
25
-
ID = 51 A, VDS = 48 V,
see fig. 6 and 13b
Qgs
Qgd
td(on)
tr
VGS = 10 V
-
nC
-
14
110
45
92
-
VDD = 30 V, ID = 51 A,
Rg = 9.1 Ω, RD = 0.55 Ω, see fig. 10b
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
-
-
D
Between lead,
Internal Drain Inductance
LD
LS
-
-
4.5
7.5
-
-
6 mm (0.25") from
package and center of
die contact
nH
G
Internal Source Inductance
S
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
MOSFET symbol
showing the
integral reverse
p - n junction diode
50c
200
D
IS
-
-
-
-
A
G
Pulsed Diode Forward Currenta
ISM
S
Body Diode Voltage
VSD
trr
TJ = 25 °C, IS = 51 A, VGS = 0 Vb
-
-
-
-
2.5
180
0.80
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
120
0.53
ns
μC
TJ = 25 °C, IF = 51 A, dI/dt = 100 A/μsb
Qrr
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. Current limited by the package (die current = 51 A).
www.vishay.com
2
Document Number: 91292
S11-0517-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ44R, SiHFZ44R
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
51A
I =
D
V
=10V
GS
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
T , Junction Temperature ( C)
J
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91292
S11-0517-Rev. B, 21-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ44R, SiHFZ44R
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
100us
1ms
10ms
°
T = 25 C
C
°
T = 175 C
J
Single Pulse
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
Fig. 8 - Maximum Safe Operating Area
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
www.vishay.com
4
Document Number: 91292
S11-0517-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ44R, SiHFZ44R
Vishay Siliconix
RD
60
50
40
30
20
10
0
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+
V
-
DD
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
VDS
90 %
25
50
75
100
125
150
175
10 %
VGS
°
T , Case Temperature( C)
C
td(on) tr
td(off) tf
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
10
1
D = 0.50
0.20
P
2
DM
0.10
0.1
t
1
0.05
t
2
0.02
0.01
Notes:
1. Duty factor D = t / t
SINGLE PULSE
1
(THERMAL RESPONSE)
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91292
S11-0517-Rev. B, 21-Mar-11
www.vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ44R, SiHFZ44R
Vishay Siliconix
VDS
15 V
tp
Driver
L
VDS
D.U.T
IAS
RG
+
-
V
A
DD
IAS
20 V
0.01 Ω
tp
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12b - Unclamped Inductive Waveforms
250
I
D
TOP
21A
36A
200
150
100
50
BOTTOM 51A
0
25
50
75
100
125
150
175
°
Starting T , Junction Temperature ( C)
J
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
VGS
12 V
0.2 µF
0.3 µF
+
-
QGS
QGD
VDS
D.U.T.
VG
VGS
3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13b - Gate Charge Test Circuit
Fig. 13a - Basic Gate Charge Waveform
www.vishay.com
6
Document Number: 91292
S11-0517-Rev. B, 21-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFZ44R, SiHFZ44R
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
Circuit layout considerations
• Low stray inductance
• Ground plane
D.U.T.
• Low leakage inductance
current transformer
-
+
-
-
+
Rg
• dV/dt controlled by Rg
• Driver same type as D.U.T.
• ISD controlled by duty factor “D”
• D.U.T. - device under test
+
-
VDD
Driver gate drive
P.W.
P.W.
D =
Period
Period
V
GS = 10 Va
D.U.T. lSD waveform
D.U.T. VDS waveform
Reverse
recovery
current
Body diode forward
current
dI/dt
Diode recovery
dV/dt
VDD
Re-applied
voltage
Body diode forward drop
Inductor current
ISD
Ripple ≤ 5 %
Note
a. VGS = 5 V for logic level devices
Fig. 14 - For N-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?91292.
Document Number: 91292
S11-0517-Rev. B, 21-Mar-11
www.vishay.com
7
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
TO-220AB
A
MILLIMETERS
MIN.
INCHES
MAX.
E
DIM.
A
MAX.
4.65
1.01
1.73
0.61
15.49
10.51
2.67
5.28
1.40
6.48
2.92
14.02
3.82
3.94
3.00
MIN.
0.167
0.027
0.047
0.014
0.585
0.395
0.095
0.192
0.045
0.240
0.095
0.526
0.131
0.139
0.102
F
4.25
0.69
1.20
0.36
14.85
10.04
2.41
4.88
1.14
6.09
2.41
13.35
3.32
3.54
2.60
0.183
0.040
0.068
0.024
0.610
0.414
0.105
0.208
0.055
0.255
0.115
0.552
0.150
0.155
0.118
Ø P
b
b(1)
c
D
E
e
e(1)
F
H(1)
J(1)
L
1
3
2
L(1)
Ø P
Q
* M
ECN: X10-0416-Rev. M, 01-Nov-10
DWG: 5471
b(1)
Note
* M = 1.32 mm to 1.62 mm (dimension including protrusion)
Heatsink hole for HVM
C
b
e
J(1)
e(1)
Document Number: 71195
Revison: 01-Nov-10
www.vishay.com
1
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
1
相关型号：
©2020 ICPDF网 联系我们和版权申明