IRFR9014TRL [VISHAY]

Power MOSFET; 功率MOSFET

IRFR9014TRL


型号：	IRFR9014TRL
厂家：	VISHAY TELEFUNKEN
描述：	Power MOSFET 功率MOSFET 晶体晶体管开关脉冲
文件：	总8页 (文件大小：2013K)
下载：	下载PDF数据表文档文件

IRFR9014TRLA

Power MOSFET

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1 KERSEMI

IRFR9014TRLPBF

Power MOSFET

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25 VISHAY

IRFR9014TRLPBFA

Power MOSFET

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1 KERSEMI

IRFR9014TRPBF

Power MOSFET

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44 VISHAY

IRFR9014TRPBFA

Power MOSFET

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1 KERSEMI

IRFR9014TRR

Power MOSFET

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1 KERSEMI

IRFR9014TRRPBF

Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

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0 IRF

IRFR9014TRRPBF

Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3

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1 VISHAY

IRFR9015

TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 4.5A I(D) | TO-252AA

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103 ETC

IRFR9015-T1

Power Field-Effect Transistor, 4.5A I(D), 60V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

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0 SAMSUNG

IRFR9020

Power MOSFET

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124 VISHAY

IRFR9020

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS

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239 IRF

IRFR9020PBF

Power MOSFET

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25 VISHAY

IRFR9020PBF

Power MOSFET

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21 KERSEMI

IRFR9020-T1

Power Field-Effect Transistor, 9.9A I(D), 50V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3

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0 SAMSUNG

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