IRF9Z14STRRPBF [VISHAY]
暂无描述;型号: | IRF9Z14STRRPBF |
厂家: | VISHAY |
描述: | 暂无描述 晶体 晶体管 功率场效应晶体管 |
文件: | 总8页 (文件大小:2454K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
Power MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
• Advanced Process Technology
- 60
• Surface Mount (IRF9Z14S/SiHF9Z14S)
Available
RDS(on) (Ω)
VGS = - 10 V
0.50
•
Low-ProfileThrough-Hole (IRF9Z14L/SiHF9Z14L)
RoHS*
COMPLIANT
Qg (Max.) (nC)
12
3.8
• 175 °C Operating Temperature
• Fast Switching
Q
Q
gs (nC)
gd (nC)
5.1
• P-Channel
• Fully Avalanche Rated
• Lead (Pb)-free Available
Configuration
Single
DESCRIPTION
Third generation Power MOSFETs from Vishay utilize
advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with
the fast switching speed and ruggedized device design that
Power MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use in a
wide variety of applications.
S
D2PAK (TO-263)
I2PAK (TO-262)
G
G
D
S
The D2PAK is a surface mount power package capable of
accommodating die size up to HEX-4. It provides the highest
power capability and the lowest possible on-resistance in
any existing surface mount package. The D2PAK is suitable
for high current applications because of is low internal
connection resistance and can dissipate up to 2.0 W in a
typical surface mount application.
D
P-Channel MOSFET
The through-hole version (IRF9Z14L/SiHF9Z14L) is
available for low-profile applications.
ORDERING INFORMATION
Package
D2PAK (TO-263)
IRF9Z14SPbF
SiHF9Z14S-E3
IRF9Z14S
D2PAK (TO-263)
IRF9Z14STRLPbFa
SiHF9Z14STL-E3a
IRF9Z14STRLa
I2PAK (TO-262)
IRF9Z14LPbF
Lead (Pb)-free
SiHF9Z14L-E3
-
-
SnPb
SiHF9Z14S
SiHF9Z14STLa
Note
a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
- 60
20
V
T
C = 25 °C
- 6.7
- 4.7
- 27
0.29
140
- 6.7
4.3
Continuous Drain Currente
VGS at - 10 V
ID
TC =100°C
A
Pulsed Drain Currenta, e
Linear Derating Factor
Single Pulse Avalanche Energyb, e
Avalanche Currenta
IDM
W/°C
mJ
A
EAS
IAR
Repetiitive Avalanche Energya
EAR
mJ
T
C = 25 °C
3.7
Maximum Power Dissipation
PD
W
TA = 25 °C
43
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91089
S-Pending-Rev. A, 02-Jun-08
www.vishay.com
1
WORK-IN-PROGRESS
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
Peak Diode Recovery dV/dtc, e
SYMBOL
dV/dt
LIMIT
- 4.5
UNIT
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
TJ, Tstg
- 55 to + 175
300d
°C
for 10 s
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 3.6 mH, RG = 25 Ω, IAS = - 6.7 A (see fig. 12).
c. ISD ≤ - 6.7 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
e. Uses IRF9Z14/SiHF9Z14 data and test conditions.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
40
UNIT
Maximum Junction-to-Ambient (PCB
Mounted, steady-state)a
RthJA
-
-
°C/W
Maximum Junction-to-Case (Drain)
RthJC
3.5
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
ΔVDS/TJ
VGS(th)
IGSS
VGS = 0 V, ID = - 250 µA
- 60
-
-
V
V/°C
V
V
DS Temperature Coefficient
Reference to 25 °C, ID = - 1 mAc
VDS = VGS, ID = - 250 µA
-
- 0.06
-
Gate-Source Threshold Voltage
Gate-Source Leakage
- 2.0
-
-
-
-
-
-
- 4.0
100
- 100
- 500
0.5
-
VGS
=
20 V
-
nA
VDS = - 60 V, VGS = 0 V
-
-
Zero Gate Voltage Drain Current
IDSS
µA
V
DS = - 48 V, VGS = 0 V, TJ = 150 °C
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
RDS(on)
gfs
VGS = - 10 V
VDS = - 25 V, ID = - 4.0 Ac
ID = - 4.0 Ab
-
Ω
1.4
S
Input Capacitance
Ciss
Coss
Crss
Qg
-
-
-
-
-
-
-
-
-
-
-
270
170
31
-
-
VGS = 0 V,
DS = - 25 V,
f = 1.0 MHz, see fig. 5c
Output Capacitance
V
-
pF
nC
Reverse Transfer Capacitance
Total Gate Charge
-
12
3.8
5.1
-
ID = - 6.7 A, VDS = - 48 V,
see fig. 6 and 13b, c
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
td(on)
tr
VGS = - 10 V
-
-
Turn-On Delay Time
Rise Time
11
63
10
31
7.5
-
V
DD = - 30 V, ID = - 6.7 A,
ns
Turn-Off Delay Time
Fall Time
td(off)
tf
R
G = 24 Ω, RD = 4.0 Ω, see fig. 10b
-
-
Internal Source Inductance
Drain-Source Body Diode Characteristics
LS
Between lead, and center of die contact
-
nH
MOSFET symbol
showing the
integral reverse
p - n junction diode
D
Continuous Source-Drain Diode Current
IS
-
-
- 6.7
A
V
G
Pulsed Diode Forward Currenta
Body Diode Voltage
ISM
-
-
-
-
- 27
S
VSD
TJ = 25 °C, IS = - 6.7 A, VGS = 0 Vb
- 5.5
www.vishay.com
2
Document Number: 91089
S-Pending-Rev. A, 02-Jun-08
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain-Source Body Diode Characteristics
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
trr
-
-
80
96
160
190
ns
TJ = 25 °C, IF = - 6.7 A, dI/dt = 100 A/µsb, c
Qrr
ton
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.
c. Uses IRF9Z14/SiHF9Z14 data and test conditions.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Fig. 1 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91089
S-Pending-Rev. A, 02-Jun-08
www.vishay.com
3
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
www.vishay.com
4
Document Number: 91089
S-Pending-Rev. A, 02-Jun-08
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
RD
VDS
VGS
D.U.T.
RG
-
+
VDD
- 10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
Fig. 10a - Switching Time Test Circuit
td(on) tr td(off) tf
VGS
10 %
90 %
VDS
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
L
IAS
VDS
Vary tp to obtain
required IAS
VDS
D.U.T.
R G
-
V
+
DD
VDD
IAS
tp
- 10 V
0.01 Ω
tp
VDS
Fig. 12b - Unclamped Inductive Waveforms
Fig. 12a - Unclamped Inductive Test Circuit
Document Number: 91089
S-Pending-Rev. A, 02-Jun-08
www.vishay.com
5
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Current regulator
Same type as D.U.T.
50 kΩ
QG
- 10 V
12 V
0.2 µF
0.3 µF
-
QGS
QGD
V
+
DS
D.U.T.
VG
VGS
- 3 mA
Charge
IG
ID
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
www.vishay.com
6
Document Number: 91089
S-Pending-Rev. A, 02-Jun-08
IRF9Z14S, SiHF9Z14S, IRF9Z14L, SiHF9Z14L
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
D.U.T.
+
Circuit layout considerations
•
Low stray inductance
• Ground plane
•
Low leakage inductance
current transformer
-
+
-
+
-
RG
+
-
• dV/dt controlled by RG
• ISD controlled by duty factor "D"
• D.U.T. - device under test
VDD
Compliment N-Channel of D.U.T. for driver
Driver gate drive
P.W.
Period
Period
D =
P.W.
V
= - 10 V*
GS
D.U.T. I waveform
SD
Reverse
recovery
current
Body diode forward
current
dI/dt
D.U.T. V waveform
DS
Diode recovery
dV/dt
V
DD
Re-applied
voltage
Body diode forward drop
Ripple ≤ 5 %
Inductor current
I
SD
* VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?91089.
Document Number: 91089
S-Pending-Rev. A, 02-Jun-08
www.vishay.com
7
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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