IL420-X009 [VISHAY]
Optocoupler, Phototriac Output, High dV/dt, Low Input Current; 光电耦合器，光敏可控硅输出，高dv / dt ，低输入电流
| 型号： | IL420-X009 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler, Phototriac Output, High dV/dt, Low Input Current |
| 文件： | 总7页 (文件大小：264K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IL420/ IL4208
Vishay Semiconductors
VISHAY
Optocoupler, Phototriac Output, High dV/dt, Low Input Current
Features
• High input sensitivity IFT = 2.0 mA
• 600/800 V blocking voltage
MT2
1
6
5
4
A
• 300 mA on-state current
• High static dV/dt 10 kV/µs
• Inverse parallel SCRs provide commutating
NC
2
3
C
MT1
NC
dV/dt > 10 kV/µs
• Very low leakage < 10 µA
• Isolation Test Voltage 5300 VRMS
• Small 6-pin DIP package
i179035
dt of greater than 10 kV/µs. This clamp circuit has a
MOSFET that is enhanced when high dV/dt spikes
occur between MT1 and MT2 of the TRIAC. When
conducting, the FET clamps the base of the pho-
totransistors, disabling the firs stage SCR predriver
Agency Approvals
• UL - File No. E52744 System Code H or J
• CSA -93751
• BABT/ BSI IEC60950 IEC60965
• DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
The 600/800 V blocking voltage permits control of off-
line voltages up to 240 VAC, with a safety factor of
more than two, and is sufficient for as much as
380 VAC.
Applications
The IL420/ IL4208 isolates low-voltage logic from
120, 240, and 380 VAC lines to control resistive,
inductive, or capacitive loads including motors, sole-
noids, high current thyristors or TRIAC and relays.
Solid-state relays
Industrial controls
Office equipment
Consumer appliances.
Order Information
Description
Part
Remarks
, DIP-6
The IL420/ IL4208 consists of a GaAs IRLED optically
coupled to a photosensitive non-zero crossing TRIAC
network. The TRIAC consists of two inverse parallel
connected monolithic SCRs. These three semicon-
ductors are assembled in a six pin dual in-line pack-
age.
High input sensitivity is achieved by using an emitter
follower phototransistor and a cascaded SCR pre-
driver resulting in an LED trigger current of less than
2.0 mA (DC)
IL420
600 V V
800 V V
600 V V
600 V V
600 V V
800 V V
800 V V
DRM
DRM
DRM
DRM
DRM
DRM
DRM
IL4208
, DIP-6
IL420-X006
IL420-X007
IL420-X009
IL4208-X007
IL4208-X009
, DIP-6 400 mil (option 6)
, SMD-6 (option 7)
, SMD-6 (option 9)
, SMD-6 (option 7)
, SMD-6 (option 9)
For additional information on the available options refer to
Option Information.
The IL420/ IL4208 used two discrete SCRs resulting
in a commutating dV/dt of greater than 10 k/µs. The
use of a proprietary dV/dt clam results in a static dV/
Document Number 83629
Rev. 1.4, 26-Apr-04
www.vishay.com
1
IL420/ IL4208
Vishay Semiconductors
VISHAY
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
amb
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
6.0
Unit
V
Reverse voltage
V
R
Forward current
Surge current
I
60
2.5
mA
A
F
I
FSM
Power dissipation
Derate from 25 °C
P
100
1.33
mW
diss
mW/°C
Output
Parameter
Test condition
Part
Symbol
Value
600
Unit
Peak off-state voltage
IL420
V
V
V
V
DRM
DRM
IL4208
800
300
3.0
RMS on-state current
Single cycle surge current
Power dissipation
I
mA
A
TM
I
TSM
P
500
6.6
mW
mW/°C
diss
Derate from 25 °C
Coupler
Parameter
Test condition
Symbol
Value
5300
Unit
1)
t = 1.0 sec.
V
V
RMS
Isolation test voltage
ISO
Pollution degree
(DIN VDE 0109)
2
Creepage distance
Clearance
≥ 7.0
≥ 7.0
≥ 175
mm
mm
2)
Comparative tracking
12
Isolation resistance
V
V
= 500 V, T
= 25 °C
R
Ω
Ω
IO
IO
amb
IO
IO
≥ 10
11
= 500 V, T
= 100 °C
R
amb
≥ 10
Storage temperature range
Ambient temperature range
Soldering temperature
T
- 55 to + 150
- 55 to + 100
260
°C
°C
°C
stg
T
amb
max. ≤ 10 sec. dip soldering
≥ 0.5 mm from case bottom
T
sld
1)
between emitter and detector, climate per DIN 50014, part 2, Nov. 74
index per DIN IEC 60112/VDE 0303 part 1, group IIIa per DIN VDE 6110
2)
www.vishay.com
2
Document Number 83629
Rev. 1.4, 26-Apr-04
IL420/ IL4208
Vishay Semiconductors
VISHAY
Electrical Characteristics
T
= 25 °C, unless otherwise specified
amb
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
Symbol
Min
Typ.
1.16
Max
1.35
Unit
V
Forward voltage
I = 10 mA
V
I
F
F
Reverse current
V
= 6.0 V
0.1
40
10
µA
pF
R
R
Input capacitance
V
= 0 V, f = 1.0 MHz
C
F
IN
Thermal resistance, junction to
ambient
R
750
°C/W
thja
Output
Parameter
Test condition
Part
Symbol
Min
424
Typ.
460
Max
Unit
V
Off-state voltage
I
= 70 µA
IL420
V
V
D(RMS)
D(RMS)
D(RMS)
D(RMS)
I
= 70 µA
IL4208
IL420
565
600
800
V
V
Repetitive peak off-state voltage I
= 100 µs
V
V
DRM
DRM
DRM
IL4208
V
Off-state current
On-state voltage
On-current
V
= V
, T = 100 °C
I
BD
10
100
30
µA
V
D
DRM,
A
I = 300 mA
V
1.7
T
TM
TM
PF = 1.0, V
= 1.7 V
I
300
3.0
mA
A
T(RMS)
Surge (Non-repetitive) on-state f = 50 Hz
current
I
TSM
Holding current
I
65
5.0
1.0
7.0
500
µA
H
Latching current
V
= 2.2 V
I
mA
T
L
LED trigger current
V
= 5.0 V
I
2.0
14
AK
FT
Trigger current temperature
gradient
∆I /∆T
µA/°C
V/µs
FT
j
Critical state of rise off-state
voltage
V
= 0.67 V
, T = 25 °C
dV/dt
1000
D
DRM
J
cr
V
V
= 0.67 V
= 0.67 V
, T = 80 °C
dV/dt
5000
V/µs
V/µs
D
D
DRM
J
cr
Critical rate of rise of voltage at
current commutation
,
dV/dt
10000
DRM
crq
crq
cr
dI/dt ≤ 15 A/ms , T = 25 °C
crq
J
V
= 0.67 V
,
dV/dt
dI/dt
5000
8.0
V/µs
D
DRM
dI/dt ≤ 15 A/ms , T = 80 °C
crq
J
Critical state of rise of on-state
current
A/µs
Thermal resistance, junction to
ambient
R
150
°C/W
thja
Coupler
Parameter
Test condition
Symbol
dV/dt
Min
Typ.
500
Max
Unit
Critical rate of rise of coupled
input/output voltage
I = 0 A, V
= V
= V
D(RMS)
V/µs
T
RM
DM
Capacitance (input-output)
Isolation resistance
f = 1.0 MHz, V = 0 V
C
R
R
0.8
pF
Ω
IO
IO
IO
IO
12
V
V
= 500, T = 25 °C
A
IO
IO
10
11
= 500, T = 100 °C
Ω
A
10
Document Number 83629
Rev. 1.4, 26-Apr-04
www.vishay.com
3
IL420/ IL4208
Vishay Semiconductors
VISHAY
Switching Characteristics
Parameter
Test condition
= V
Symbol
Min
Typ.
35
Max
Unit
Turn-on time
V
= V
t
µs
RM
DM
D(RMS)
on
PF = 1.0, I = 300 mA
t
50
µs
T
off
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
150
1.4
1.3
1.2
Ta = -55°C
Ta = 25°C
100
1.1
1.0
50
0
0.9
0.8
0.7
Ta = 85°C
-60
-40
-20
0
20
40
60
80
100
.1
1
10
100
Ta - Ambient Temperature - °C
IF - Forward Current - mA
iil420_01
iil420_03
Fig. 1 Forward Voltage vs. Forward Current
Fig. 3 Maximum LED Power Dissipation
10000
τ
Duty Factor
.005
.01
1000
100
10
t
I
= f(V ),
T
T
.02
parameter: T
j
.05
.1
.2
τ
DF = /t
.5
-6
-5
-4
-3
-2
-1
0
1
10
10
10
10
10
10
10
10
iil420_04
t -LED Pulse Duration -s
iil420_02
Fig. 2 Peak LED Current vs. Duty Factor, Tau
Fig. 4 Typical Output Characteristics
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4
Document Number 83629
Rev. 1.4, 26-Apr-04
IL420/ IL4208
Vishay Semiconductors
VISHAY
I
R
=f(T ),
A
TRMS
thJA
I
=f (T ), V =600 V,
j D
=150 K/W
D
parameter: T
j
Device switch
soldered in pcb
or base plate.
iil420_08
iil420_05
Fig. 5 Current Reduction
Fig. 8 Typical Off-State Current
for 40 to 60 Hz
line operation,
P
=f(I
)
tot
TRMS
I
=f(T
), R
PIN5
=16.5 K/W
thJ–PIN5
TRMS
Thermocouple measurement must
be performed potentially separated
to A1 and A2. Measuring junction
as near as possible at the case.
iil420_06
iil420_09
Fig. 6 Current Reduction
Fig. 9 Power Dissipation
I
=f (t )I normalized
FTN pIF FTN
t
=f (I I 25°C), V =200 V,
F FT
gd
parameter: T
D
to I , referring to t )I≥1.0 ms,
V
FT pIF
j
=200 V, f=40 to 60 Hz typ.
OP
iil420_07
iil420_10
Fig. 7 Typical Trigger Delay Time
Fig. 10Pulse Trigger Current
Document Number 83629
Rev. 1.4, 26-Apr-04
www.vishay.com
5
IL420/ IL4208
Vishay Semiconductors
VISHAY
Package Dimensions in Inches (mm)
pin one ID
3
2
1
.248 (6.30)
.256 (6.50)
ISO Method A
4
6
5
.335 (8.50)
.343 (8.70)
.300 (7.62)
typ.
.048 (1.22)
.052 (1.32)
.039
(1.00)
Min.
.130 (3.30)
.150 (3.81)
4°
typ .
18°
.130 (3.30)
.150 (3.81)
.033 (0.84) typ.
3°–9°
.008 (.20)
.012 (.30)
.018 (0.46)
.020 (0.51)
.033 (0.84) typ.
.100 (2.54) typ
.300–.347
(7.62–8.81)
i178014
Option 7
Option 6
Option 9
.300 (7.62)
TYP.
.407 (10.36)
.391 (9.96)
.375 (9.53)
.395 (10.03)
.307 (7.8)
.291 (7.4)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.0040 (.102)
.0098 (.249)
.012 (.30) typ.
.315 (8.0)
MIN.
.020 (.51)
.040 (1.02)
.014 (0.35)
.010 (0.25)
.400 (10.16)
.331 (8.4)
MIN.
15° max.
18450
.315 (8.00)
min.
.406 (10.3)
MAX.
.430 (10.92)
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6
Document Number 83629
Rev. 1.4, 26-Apr-04
IL420/ IL4208
Vishay Semiconductors
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83629
Rev. 1.4, 26-Apr-04
www.vishay.com
7
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