ICTE-8C [VISHAY]
TRANSZORB⑩ TRANSIENT VOLTAGE SUPPRESSOR; 的TransZorb ™瞬态电压抑制器型号: | ICTE-8C |
厂家: | VISHAY |
描述: | TRANSZORB⑩ TRANSIENT VOLTAGE SUPPRESSOR |
文件: | 总4页 (文件大小:46K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
ICTE5.0 THRU ICTE15C SERIES
TRANSZORB™ TRANSIENT VOLTAGE SUPPRESSOR
Stand-off Voltage - 5.0 to 15 Volts
Peak Pulse Power - 1500 Watts
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Case Style 1.5KE
♦ Glass passivated junction
♦ 1500W Peak pulse power capability with a
10/1000µs waveform, repetition rate (duty cycle): 0.05%
♦ Excellent clamping capability
1.00 (25.4)
MIN.
♦ Low incremental surge resistance
♦ Fast response time: typically less than
0.205 (5.207)
1.0ps from 0 Volts to V
and 5.0ns for bi-directional
for uni-directional
(BR)
0.190 (4.826)
DIA.
♦ Ideal for data and bus line applications
♦ High temperature soldering guaranteed:
265°C/10 seconds, 0.375" (9.5mm) lead length,
5lbs. (2.3 kg) tension
0.375 (9.527)
0.360 (9.146)
♦ Includes 1N6373 thru 1N6385
1.00 (25.4)
MIN.
MECHANICAL DATA
Case: Molded plastic over a passivated junction
Terminals: Plated Axial leads, solderable per MIL-STD-750,
Method 2026
0.042 (1.07)
0.038 (0.958)
DIA.
Polarity: For uni-directional types the color band denotes the
cathode, which is posititive with respect to the anode under
normal TVS operation
Dimensions in inches and (millimeters)
Mounting Position: Any
Weight: 0.045 ounce, 1.2 grams
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOL
VALUE
UNITS
Peak pulse power dissipation with a
10/1000µs waveform (NOTE 1, FIG. 1)
PPPM
Minimum 1500
Watts
Steady state power dissipation, TL= 75°C
at lead lengths 0.375" (9.5mm)
PM(AV)
IPPM
6.5
Watts
Amps
Peak pulse current with a 10/1000µs
waveform (NOTE 1, FIG. 3)
SEE TABLE 1 & 2
Peak forward surge current, 8.3ms single half
sine-wave superimposed on rated load for uni-directional
only (JEDEC Method) (NOTE 2)
IFSM
200
Amps
Maximum instantaneous forward voltage
at 100A for uni-directional only
VF
3.5
Volts
°C
Operating junction and
storage temperature range
TJ, TSTG
-55 to +175
NOTES:
(1) Non-repetitive current pulse, per Fig. 3 and derated above TA= 25°C per Fig. 2
(2) 8.3ms single half sine-wave, duty cycle=4 pulses per minute maximum
1/21/99
ELECTRICAL CHARACTERISTICS at 25°C (JEDEC REGISTERED DATA) TABLE 1
MINIMUM(3)
BREAKDOWN
VOLTAGE
at 1.0mA.
V(BR)
MAXIMUM
REVERSE
LEAKAGE
at VWM
ID
MAXIMUM
CLAMPING
VOLTAGE
at lPP = 1.0A
Vc
MAXIMUM
CLAMPING
VOLTAGE
at lPP = 10A
Vc
MAXIMUM
PEAK
PULSE
CURRENT
IPP
STAND-OFF
VOLTAGE
GENERAL
SEMICONDUCTOR
PART
JEDEC
TYPE
VWM
NUMBER
NUMBER
(VOLTS)
(VOLTS)
(µA)
(VOLTS)
(VOLTS)
(Amps)
1N6373(2)
1N6374
1N6375
1N6376
1N6377
ICTE-5(2)
ICTE-8
5.0
8.0
6.0
9.4
300
25.0
2.0
7.1
7.5
160
100
90
11.3
13.7
16.1
20.1
11.5
14.1
16.5
20.6
ICTE-10
ICTE-12
ICTE-15
10.0
12.0
15.0
11.7
14.1
17.6
2.0
70
2.0
60
ELECTRICAL CHARACTERISTICS AT 25°C (JEDEC REGISTERED DATA) TABLE 2
MINIMUM(3)
BREAKDOWN
VOLTAGE
at 1.0mA.
V(BR)
MAXIMUM
REVERSE
LEAKAGE
at VWM
ID
MAXIMUM
CLAMPING
VOLTAGE
at lPP = 1A
Vc
MAXIMUM
CLAMPING
VOLTAGE
at lPP = 10A
Vc
MAXIMUM
PEAK
PULSE
CURRENT
IPP
STAND-OFF
VOLTAGE
GENERAL
SEMICONDUCTOR
PART
JEDEC
TYPE
VWM
NUMBER
NUMBER
(VOLTS)
(VOLTS)
(µA)
(VOLTS)
(VOLTS)
(Amps)
1N6382
1N6383
1N6384
1N6385
ICTE-8C
ICTE-10C
ICTE-12C
ICTE-15C
8.0
9.4
50.0
2.0
2.0
2.0
11.4
14.1
16.7
20.8
11.6
14.5
17.1
21.4
100
90
10.0
12.0
15.0
11.7
14.1
17.6
70
60
NOTES:
(1) “ C “ Suffix indicates bi-directional
(2) ICTE-5 and 1N6373 are not available as bi-directional
(3) The minimum breakdown voltage as shown takes into consideration the ±1 Volt tolerance normally specified for power supply regulation on most integrated circuit
manufacturers data sheets. Please consult factory for devices that require reduced clamping voltages where tighter regulated power supply voltages are employed.
(4) Clamping Factor: 1.33 at full lo rated power; 1.20 at 50% rated power; Clamping Factor: the ratio of the actual Vc (Clamping Voltage) to the V(BR) (Breakdown Voltage)
as measured on a specific device.
RATINGS AND CHARACTERISTIC CURVES ICTE5.0 THRU ICTE15C SERIES
FIG. 1 - PEAK PULSE POWER RATING CURVE
FIG. 2 - PULSE DERATING CURVE
100
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG. 3
100
75
50
25
0
T =25°C
A
10
1.0
0.1
25
75
125
175
200
0
50
100
150
µ
µ
µ
µ
100 s
1.0ms
10ms
0.1 s
1.0 s
10 s
TA, AMBIENT TEMPERATURE, °C
td, PULSE WIDTH, sec.
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
UNI-DIRECTIONAL TYPE
100,000
10,000
FIG. 3 - PULSE WAVEFORM
MEASURED at
ZERO BIAS
PULSE WIDTH (td) IS DEFINED
as that POINT WHERE the PEAK
CURRENT DECAYS to 50% of I
tr=10µsec.
PP
T =25°C
A
f=1.0 MHz
Vsig=50mVp-p
PEAK VALUE
I
PP
100
50
MEASURED at
STAND-OFF
VOLTAGE, V
HALF VALUE - I
WM
PP
2
1,000
100
10 x 1000µs WAVEFORM as DEFINED by R.E.A.
td
1
0
0
1
2
5
10 20
50 100 200
1.0
2.0
3.0
4.0
V(BR), BREAKDOWN VOLTAGE, VOLTS
t, TIME, ms
2
5
RATINGS AND CHARACTERISTIC CURVES ICTE5.0 THRU ICTE15C SERIES
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
BIDIRECTIONAL TYPE
100,000
FIG. 6 - MAXIMUM NON-REPETITIVE PEAK FORWARD
MEASURED AT
ZERO BIAS
SURGE CURRENT
200
FOR UNI-DIRECTIONAL ONLY
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
T =25°C
J
10,000
f=1.0 MHz
Vsig=50mVp-p
100
1,000
100
MEASURED AT
STAND-OFF
VOLTAGE
(V
WM
)
10
1
10
NUMBER OF CYCLES AT 60 Hz
100
10
100 200
1
V(BR), BREAKDOWN VOLTAGE, VOLTS
FIG. 7 - TYPICAL CHARACTERISTIC CLAMPING VOLTAGE
50
T =25°C UNIDIRECTIONAL ONLY
A
10
1
6
8
10
12 14
16
18
20 22
24
Vc, CLAMPING VOLTAGE, VOLTS
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