GSIB2520_14 [VISHAY]
Single-Phase Single In-Line Bridge Rectifiers;
| 型号： | GSIB2520_14 |
| 厂家： | 
VISHAY |
| 描述： | Single-Phase Single In-Line Bridge Rectifiers |
| 文件： | 总3页 (文件大小：67K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GSIB2520, GSIB2540, GSIB2560, GSIB2580
www.vishay.com
Vishay General Semiconductor
Single-Phase Single In-Line Bridge Rectifiers
FEATURES
• UL recognition file number E54214
• Thin single in-line package
• Glass passivated chip junction
• High surge current capability
• High case dielectric strength of 2500 VRMS
• Solder dip 275 °C max. 10 s, per JESD 22-B106
~
~
~
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Case Style GSIB-5S
~
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave rectification
for switching power supply, home appliances, office
equipment, industrial automation applications.
PRIMARY CHARACTERISTICS
Package
GSIB-5S
25 A
MECHANICAL DATA
IF(AV)
Case: GSIB-5S
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
VRRM
IFSM
200 V, 400 V, 600 V, 800 V
350 A
10 μA
1.0 V
IR
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
VF at IF = 12.5 V
TJ max.
150 °C
In-Line
Polarity: As marked on body
Diode variations
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL GSIB2520
GSIB2540
400
GSIB2560
600
GSIB2580
800
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
200
140
200
V
V
V
280
420
560
Maximum DC blocking voltage
400
600
800
TC = 98 °C (1)
TA = 25 °C (2)
25
Maximum average forward rectified
output current at
IF(AV)
A
3.5
Peak forward surge current single sine-wave
superimposed on rated load
IFSM
350
500
A
Rating for fusing (t < 8.3 ms)
I2t
A2s
°C
Operating junction and storage temperature range
TJ, TSTG
-55 to +150
Notes
(1)
Unit case mounted on aluminum plate heatsink
Units mounted on PCB without heatsink
(2)
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL
GSIB2520
GSIB2540
GSIB2560
GSIB2580
UNIT
Maximum instantaneous forward
voltage drop per diode
12.5 A
VF
IR
1.00
V
TA = 25 °C
10
Maximum DC reverse current at
rated DC blocking voltage per diode
μA
TA = 125 °C
350
Revision: 13-Jun-14
Document Number: 88646
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSIB2520, GSIB2540, GSIB2560, GSIB2580
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
GSIB2520
GSIB2540
GSIB2560
GSIB2580
UNIT
(2)
RJA
22
Typical thermal resistance
°C/W
(1)
RJC
1.0
Notes
(1)
(2)
(3)
Unit case mounted on aluminum plate heatsink
Units mounted on PCB without heatsink
Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
GSIB2560-E3/45
7.0
45
20
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
30
Heatsink Mounting, TC
TA = 150 °C
25
10
TA = 125 °C
20
TA = 100 °C
15
TA = 85 °C
1
10
TA = 25 °C
5
0
P.C.B. Mounting, TA
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
0
25
50
75
100
125
150
Instantaneous Forward Voltage (V)
Temperature (°C)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 3 - Typical Forward Characteristics Per Diode
400
350
300
200
150
100
50
1000
TA = 125 °C
100
10
1
TA = 25 °C
40
1.0 Cycle
0.1
0
1
10
100
0
20
60
80
100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Fig. 4 - Typical Reverse Characteristics Per Diode
Current Per Diode
Revision: 13-Jun-14
Document Number: 88646
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GSIB2520, GSIB2540, GSIB2560, GSIB2580
www.vishay.com
Vishay General Semiconductor
1000
100
10
10
1
1
0.1
0.01
1
10
100
0.1
1
10
Reverse Voltage (V)
t - Heating Time (s)
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in millimeters
Case Style GSIB-5S
4.6 0.2
3.6 0.2
30 0.3
+
2.5 0.2
2.7 0.2
2.2 0.2
1
0.1
0.7 0.1
7.5
0.2
7.5
0.2
10 0.2
Revision: 13-Jun-14
Document Number: 88646
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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