GI824/23 [VISHAY]
Rectifier Diode, 1 Phase, 1 Element, 5A, 400V V(RRM), Silicon, PLASTIC, CASE P600, 2 PIN;
| 型号： | GI824/23 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 5A, 400V V(RRM), Silicon, PLASTIC, CASE P600, 2 PIN |
| 文件： | 总2页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GI820 thru GI828
Vishay Semiconductors
formerly General Semiconductor
Fast Switching Rectifier
Reverse Voltage 500 to 800 V
Forward Current 5.0 A
Case Style P600
Features
• Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
• High surge current capability
• High forward current operation
1.0 (25.4)
MIN.
• Fast switching for high efficiency
• Construction utilizes void-free molded plastic technique
• Uniform molded body
0.360 (9.1)
0.340 (8.6)
• High temperature soldering guaranteed:
250°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
0.360 (9.1)
0.340 (8.6)
Mechanical Data
Case: Void-free molded plastic body
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
0.052 (1.32)
1.0 (25.4)
MIN.
0.048 (1.22)
DIA.
Weight: 0.07 oz., 2.1 g
Packaging codes/options:
1/750 EA. per Bulk Box
4/800 EA. per 13" Reel (52mm Tape)
23/300 EA. per Ammo Box (52mm Tape)
Dimensions in inches and (millimeters)
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
VRRM
VRMS
VDC
GI820
GI821
100
70
GI822
200
140
200
250
GI824
400
280
400
450
GI826
600
420
600
650
GI828
800
560
800
880
Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
50
V
35
V
Maximum DC blocking voltage
Maximum non-repetitive peak reverse voltage
50
100
150
V
VRSM
75
V
Maximum average forward rectified current
0.375" (9.5mm) lead length at TA=55°C
IF(AV)
5.0
A
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Typical thermal resistance (1)
IFSM
300
10
A
RΘJA
°C/W
°C
Operating junction and storage temperature range
TJ, TSTG
-50 to +150
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Maximum instantaneous forward voltage
at 5.0A
TJ=25°C
TJ=100°C
VF
1.10
1.05
V
at 15.7A
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=100°C
10
1.0
IR
CJ
trr
µA
pF
ns
Typical junction capacitance at 4.0V, 1MHz
300
Maximum reverse recovery time
IF=1.0A, VR=30V, di/dt=50A/µs, Irr = 10% IRM
200
Maximum reverse recovery current
IF=1.0A, VR=30V, di/dt=50A/µs,
IRM(REC)
2.0
ns
Notes:
(1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted
Document Number 88629
21-Mar-02
www.vishay.com
1
GI820 thru GI828
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Forward Current
Fig. 2 – Forward Current
Derating Curve
Derating Curves
7.0
20
16
12
8
Resistive or Inductive Load
L = Lead Length
6.0
I(pk)
= π
I(AV)
1.1 x 1.1" (30 x 30mm)
5.0
Copper Pads
1.6 x 1.6 x 0.04"
(40 x 40 x 1mm)
Copper Heatsink
4.0
3.0
Capacitive Load
2.0
I(pk)
5.0
10
20
=
4
I(AV)
1.0
0
0
20
40
60
80
100
120
140
160
180
75 80 85 90 95 100 105 110 115 120 125
Ambient Temperature (°C)
Lead Temperature °C
Fig. 3 – Maximum Non-Repetitive
Peak Forward Surge Current
Fig. 4 – Typical Instantaneous
Forward Characteristics
400
350
300
250
200
150
100
100
10
8.3ms Single Half Sine-Wave
(JEDEC Method)
TJ = 25°C
Pulse Width = 300µs
1% Duty Cycle
TA = 25°C
1
TJ= 125°C
0.1
0.6
1
10
100
0.8
1.0
1.2
1.4
1.6
1.8
2.0
Number of Cycles at 60 HZ
Instantaneous Forward Voltage (V)
Fig. 5 – Typical Reverse
Characteristics
Fig. 6 – Typical Thermal Resistance
25
20
15
10
5.0
0
10
1
TJ = 100°C
L = Lead Length
TJ = 50°C
TJ = 25°C
0.1
0.01
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
Equal Lead Lengths to Heatsink (Inches)
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (V)
www.vishay.com
2
Document Number 88629
21-Mar-02
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