GBU8K-E3 [VISHAY]
Glass Passivated Single-Phase Bridge Rectifier;
| 型号： | GBU8K-E3 |
| 厂家： | 
VISHAY |
| 描述： | Glass Passivated Single-Phase Bridge Rectifier |
| 文件： | 总4页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GBU8A, GBU8B, GBU8D, GBU8G, GBU8J, GBU8K, GBU8M
www.vishay.com
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit boards
• High surge current capability
• High case dielectric strength of 1500 VRMS
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: For definitions of compliance
Case Style GBU
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for monitor, TV, printer, power supply, switching
mode power supply, adapter, audio equipment, and home
appliances applications.
PRIMARY CHARACTERISTICS
Package
GBU
8.0 A
IF(AV)
50 V, 100 V, 200 V, 400 V, 600 V,
800 V, 1000 V
MECHANICAL DATA
Case: GBU
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
VRRM
IFSM
IR
200 A
5 μA
VF at IF = 8.0 A
TJ max.
1.0 V
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
150 °C
In-Line
Diode variations
Polarity: As marked on body
Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.
Recommended Torque: 5.7 cm-kg (5 inches-lbs)
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL GBU8A GBU8B GBU8D GBU8G GBU8J GBU8K GBU8M UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800
560
800
1000
700
V
V
V
Maximum DC blocking voltage
100
1000
(1)
T
C = 60 °C
IF(AV)
8.0
3.9
Maximum average forward
rectified output current at
A
(2)
TA = 40 °C
IF(AV)
IFSM
I2t
Peak forward surge current single sine-wave
super-imposed on rated load
200
166
A
Rating for fusing (t < 8.3 ms)
A2s
°C
Operating junction and storage
temperature range
TJ, TSTG
- 55 to + 150
Notes
(1)
Unit case mounted on aIuminum plate heatsink
Units mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads and 0.375" (9.5 mm) lead length
(2)
Revision: 16-Aug-13
Document Number: 88616
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GBU8A, GBU8B, GBU8D, GBU8G, GBU8J, GBU8K, GBU8M
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS SYMBOL GBU8A GBU8B GBU8D GBU8G GBU8J GBU8K GBU8M UNIT
Maximum
instantaneous forward
voltage drop per diode
8.0 A
VF
1.0
V
Maximum DC reverse
current at rated DC
TA = 25 °C
5.0
IR
μA
pF
TA = 125 °C
500
blocking voltage per diode
Typical junction
capacitance per diode
4 V, 1 MHz
CJ
211
94
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL GBU8A GBU8B GBU8D GBU8G GBU8J GBU8K GBU8M UNIT
(2)
RJA
20
Typical thermal resistance
°C/W
(1)(3)
RJC
4.0
Notes
(1)
(2)
(3)
Units case mounted on aIuminum plate heatsink
Units mounted in free air, no heatsink on PCB, 0.5" x 0.5" (12 mm x 12 mm) copper pads, 0.375" (9.5 mm) lead length
Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screws
ORDERING INFORMATION
PREFERRED P/N
GBU8J-M3/45
GBU8J-M3/51
UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY
DELIVERY MODE
Tube
3.857
3.857
45
51
20
250
Paper tray
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
250
200
150
100
50
8.0
6.0
4.0
2.0
0
TJ = 150 °C
8.3 ms Single Half Sine-Wave
Heatsink Mounting, TC
PCB Mounting, TA
0.47" x 0.47" (12 mm x 12 mm)
Copper Pads 0.375" (9.5 mm) Lead
Length 60 Hz Resistive or Inductive Load
0
1
10
100
0
25
50
75
100
125
150
Number of Cycles at 60 Hz
Temperature (°C)
Fig. 1 - Derating Curve Output Rectified Current
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Revision: 16-Aug-13
Document Number: 88616
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
GBU8A, GBU8B, GBU8D, GBU8G, GBU8J, GBU8K, GBU8M
www.vishay.com
Vishay General Semiconductor
100
10
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1
100
0.1
TJ = 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
50 thru 400 V
600 thru 1000 V
0.01
10
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
10
Reverse Voltage (V)
100
1
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Forward Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
1000
100
10
TJ = 150 °C
100
10
TJ = 125 °C
1
50 thru 400 V
600 thru 1000 V
1
0.1
0.01
TJ = 25 °C
0.1
0.01
0.1
1
10
100
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
t - Heating Time (s)
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Type GBU
0.140 (3.56)
0.130 (3.30)
0.880 (22.3)
0.860 (21.8)
0.020 R (TYP.)
0.125 (3.2) x 45°
Chamfer
9° TYP.
0.310 (7.9)
0.290 (7.4)
0.160 (4.1)
0.140 (3.5)
0.740 (18.8)
0.720 (18.3)
0.075
(2.03)
(1.52)
0.080
0.060
0.085 (2.16)
0.065 (1.65)
(1.9)
R
.
5° TYP.
0.085 (2.16)
0.710 (18.0)
0.690 (17.5)
0.075 (1.90)
0.100 (2.54)
0.085 (2.16)
0.050 (1.27)
0.040 (1.02)
0.026 (0.66)
0.020 (0.51)
(4.83)
(5.33)
0.080 (2.03)
0.065 (1.65)
0.190
0.210
Polarity shown on front side of case, positive lead by beveled corner
Revision: 16-Aug-13
Document Number: 88616
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.
Revision: 02-Oct-12
Document Number: 91000
1
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