G5SBA60-E3/1 [VISHAY]
DIODE 2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode;
| 型号： | G5SBA60-E3/1 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 2.8 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE GBU, 4 PIN, Bridge Rectifier Diode 局域网 二极管 |
| 文件： | 总2页 (文件大小：25K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
G5SBA20 and G5SBA60
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Single-Phase
Bridge Rectifier
Reverse Voltage 200 and 600 V
Forward Current 6.0 A
Case Type GBU
Features
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• This series is UL listed under the Recognized
Component Index, file number E54214
• High case dielectric strength of 1500 VRMS
• Ideal for printed circuit boards
0.140 (3.56)
0.130 (3.30)
0.880 (22.3)
0.860 (21.8)
0.020 R (TYP.)
o
0.125 (3.2) x 45
o
9
CHAMFER
TYP.
0.160 (4.1)
0.140 (3.5)
0.310 (7.9)
0.290 (7.4)
0.740 (18.8)
0.720 (18.3)
• Glass passivated chip junction
• High surge current capability
0.075
0.085 (2.16)
0.065 (1.65)
(2.03)
(1.52)
0.080
0.060
(1.9)
R.
o
• High temperature soldering guaranteed:
260°C/10 seconds, 0.375 (9.5mm) lead length,
5lbs. (2.3kg) tension
5
TYP.
0.085 (2.16)
0.075 (1.90)
0.710 (18.0)
0.690 (17.5)
0.100 (2.54)
0.085 (2.16)
0.050 (1.27)
0.040 (1.02)
Mechanical Data
Case: Molded plastic body over passivated junctions
Terminals: Plated leads solderable per MIL-STD-750,
Method 2026
0.022 (0.56)
0.018 (0.46)
(4.83)
(5.33)
0.080 (2.03)
0.065 (1.65)
0.190
0.210
Mounting Position: Any (Note 3)
Mounting Torque: 5 in-lbs max.
Weight: 0.15 oz., 4.0 g
Polarity shown on front side of case, positive lead by beveled corner
If preferred, marking on front side of case may be on reverse side of case. Lead
forming option with 10mm-7.5mm spacing is available.
Packaging codes/options:
Dimensions in inches and (millimeters)
1/250 ea. per Bulk Tray Stack
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
VRRM
VRMS
VDC
G5SBA20
G5SBA60
Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
200
600
V
140
420
V
Maximum DC blocking voltage
200
600
V
Maximum average forward
rectified output current at
TC = 100OC (Note 1)
TA = 25OC (Note 2)
6.0
2.8
IF(AV)
A
A
Peak forward surge current single
sine-wave superimposed on rated load (JEDEC Method)
IFSM
I2t
150
Rating for fusing (t < 8.3ms)
93
A2sec
Typical thermal resistance per leg
(Note 2)
(Note 1)
RθJA
RθJC
22
3.4
°C/W
°C
Operating junction storage and temperature range
TJ, TSTG
–55 to +150
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol
G5SBA20
G5SBA60
Unit
Maximum instantaneous forward voltage
drop per leg at 3.0 A
VF
1.05
V
Maximum DC reverse current at rated TA = 25°C
5.0
300
IR
µA
DC blocking voltage per leg
TA = 125°C
Notes:
(1) Unit case mounted on Al plate heatsink
(2) Units mounted on P.C.B. with 0.5 x 0.5” (12 x 12mm) copper pads and 0.375” (9.5mm) lead length
(3) Recommended mounting position is to bolt down on heatsink with silicone thermal compound for maximum heat transfer with #6 screw
Document Number 88608
21-Feb-03
www.vishay.com
1
G5SBA20 and G5SBA60
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 - Derating Curve Output
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current Per Leg
Rectified Current
8.0
150
100
50
T = T max.
J
J
single sine-wave
(JEDEC Method)
Heatsink Mounting, T
C
6.0
4.0
P.C.B. Mounting, T
A
2.0
0
1.0 Cycle
0
1
10
Number of Cycles at 60 Hz
100
0
50
100
150
Temperature (°C)
Fig. 3 - Typical Forward Characteristics
Per Leg
Fig. 4 - Typical Reverse Characteristics
Per Leg
500
100
100
10
TJ = 125°C
10
1
TJ = 25°C
Pulse Width = 300µs
1% Duty Cycle
1
0.1
0.1
0.01
TJ = 25°C
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0
20
40
60
80
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Junction Capacitance
Per Leg
Fig. 6 - Typical Transient Thermal
Impedance
100
10
1,000
TJ = 25°C
f = 1.0 MHz
Vsig = 50mVp-p
100
1
0.1
10
0.1
1
10
100
0.01
0.1
1
10
100
Reverse Voltage (V)
t, Heating Time (sec.)
www.vishay.com
2
Document Number 88608
21-Feb-03
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