ESH2PD [VISHAY]
High Current Density Surface Mount Ultrafast Rectifiers; 高电流密度表面贴装超快整流器型号: | ESH2PD |
厂家: | VISHAY |
描述: | High Current Density Surface Mount Ultrafast Rectifiers |
文件: | 总4页 (文件大小:104K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
New ProducEt SH2PB, ESH2PC & ESH2PD
Vishay General Semiconductor
High Current Density Surface Mount Ultrafast Rectifiers
FEATURES
• Very low profile - typical height of 1.0 mm
eSMPTM Series
• Ideal for automated placement
• Glass passivated chip junction
• Ultrafast recovery times for high frequency
• Low forward voltage drop, low power loss
• Low thermal resistance
• Meets MSL level 1 per J-STD-020, LF maximum
peak of 260 °C
DO-220AA (SMP)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in secondary rectification and freewheeling for
ultrafast switching speeds of ac-to-ac and dc-to-dc
converters in high temperature conditions for both
PRIMARY CHARACTERISTICS
consumer and automotive applications.
IF(AV)
2 A
100 V, 150 V, 200 V
25 ns
VRRM
MECHANICAL DATA
trr
Case: DO-220AA (SMP)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
V
F at IF = 2 A
TJ max.
0.75 V
175 °C
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: Color band denotes cathode end
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
ESH2PB
P2B
ESH2PC
P2C
ESH2PD
P2D
UNIT
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (Fig. 1)
VRRM
IF(AV)
100
150
200
V
A
2.0
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
50
A
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Maximum instantaneous
forward voltage (1)
TJ = 25 °C
TJ = 125 °C
0.90
0.75
0.98
0.82
IF = 2 A
VF
V
TJ = 25 °C
TJ = 125 °C
0.2
12.6
1.0
25
Maximum reverse current (2)
rated VR
IR
µA
Document Number: 89016
Revision: 13-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
New Product
ESH2PB, ESH2PC & ESH2PD
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
MAX.
UNIT
Maximum reverse recovery time IF = 0.5 A, IR = 1 A, Irr = 0.25 A
trr
-
25
ns
-
-
25
35
Typical reverse recovery time
IF = 1.0 A, VR = 30 V,
trr
ns
TJ = 25 °C
TJ = 100 °C
dI/dt = 50 A/µs,
Irr = 10 % IRM
-
-
10
15
Typical stored charge
Qrr
CJ
nC
pF
Typical junction capacitance
4.0 V, 1 MHz
-
25
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL
ESH2PB
ESH2PC
ESH2PD
UNIT
RθJA
RθJL
RθJC
80
15
22
Typical thermal resistance (1)
°C/W
Note:
(1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 6.0 x 6.0 mm copper pad areas. RθJL is measured
at the terminal of cathode band. RθJC is measured at the top centre of the body
ORDERING INFORMATION (Example)
PREFERRED P/N
ESH2PB-E3/84A
ESH2PB-E3/85A
ESH2PBHE3/84A (1)
ESH2PBHE3/85A (1)
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
3000
DELIVERY MODE
0.024
84A
85A
84A
85A
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
0.024
10 000
0.024
3000
0.024
10 000
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
2.4
2.0
1.6
1.2
0.8
50
40
30
20
10
0
TL Measured
0.4
at the Cathode Band Terminal
0
1
10
Number of Cycles at 50 Hz
100
95
105
115
125
135
145
155
165
175
Lead Temperature (°C)
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89016
Revision: 13-May-08
New ProducEt SH2PB, ESH2PC & ESH2PD
Vishay General Semiconductor
100
10
1000
100
10
TJ = 175 °C
TJ = 150 °C
1
T
J = 25 °C
0.1
TJ = 125 °C
0.01
1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
10
100
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
1000
TJ = 175 °C
100
TJ = 150 °C
J = 125 °C
10
T
1
0.1
TJ = 25 °C
0.01
10
20
30
40
50
60
70
80
90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-220AA (SMP)
0.012 (0.30) REF.
Cathode band
0.086 (2.18)
0.074 (1.88)
0.053 (1.35)
0.041 (1.05)
0.036 (0.91)
0.024 (0.61)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.103 (2.60)
0.032 (0.80)
0.087 (2.20)
0.016 (0.40)
0.025 0.030
(0.635) (0.762)
0.105
(2.67)
0.013 (0.35)
0.004 (0.10)
0.045 (1.15)
0.033 (0.85)
0.100
(2.54)
0.050
(1.27)
0.012 (0.30) 0.018 (0.45)
0.000 (0.00) 0.006 (0.15)
Document Number: 89016
Revision: 13-May-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号:
ESH2PD-M3/84A
DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-220AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMP, 2 PIN, Rectifier Diode
VISHAY
ESH2PDHM3/84A
DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-220AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMP, 2 PIN, Rectifier Diode
VISHAY
ESH2PDHM3/85A
DIODE 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-220AA, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SMP, 2 PIN, Rectifier Diode
VISHAY
ESH335M100AC3JA
ESH, Aluminum Electrolytic, 3.3 uF, 20%, 100 VDC, -40/+105°C, Lead Spacing = 5mm
KEMET
ESH335M160AG3EA
ESH, Aluminum Electrolytic, 3.3 uF, 20%, 160 VDC, -25/+105°C, Lead Spacing = 3.5mm
KEMET
ESH335M400AH1AA
ESH, Aluminum Electrolytic, 3.3 uF, 20%, 400 VDC, -25/+105°C, Lead Spacing = 5mm
KEMET
©2020 ICPDF网 联系我们和版权申明