ESH1PD-HE3 [VISHAY]

Rectifier Diode, 1 Element, 1A, 200V V(RRM),;


型号：	ESH1PD-HE3
厂家：	VISHAY
描述：	Rectifier Diode, 1 Element, 1A, 200V V(RRM),
文件：	总4页 (文件大小：340K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ESH1PB, ESH1PC & ESH1PD

New Product

Vishay General Semiconductor

High Current Density Surface Mount Ultrafast Rectifiers

Major Ratings and Characteristics

I_F(AV)

V_RRM

t_rr

1 A

100 V, 150 V, 200 V

25 ns

V_F

0.90 V

T_Jmax.

175 °C

DO-220AA (SMP)

Features

Mechanical Data

• Very low profile - typical height of 1.0 mm

Case: DO-220AA (SMP)

• Ideal for automated placement

Epoxy meets UL-94V-0 flammability rating

• Glass passivated chip junction

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

• Ultrafast recovery times for high frequency

• Low forward voltage drop, low power loss

• Low thermal resistance

• Meets MSL level 1 per J-STD-020C

• Solder Dip 260 °C, 40 seconds

Polarity: Color band denotes cathode end

Typical Applications

For use in secondary rectification and freewheeling

for ultrafast switching speeds of ac-to-ac and dc-to-dc

converters in high temperature conditions for both

consumer and automotive applications

Maximum Ratings

(T_A= 25 °C unless otherwise specified)

Parameter

Device marking code

Symbol

ESH1PB

ESH1PC

ESH1PD

Unit

Maximum repetitive peak reverse voltage

V_RRM

I_F(AV)

I_FSM

100

150

200

Maximum average forward rectified current (Fig. 1)

1.0

Peak forward surge current 10 ms single half sine-

wave superimposed on rated load

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 175

°C

Document Number 88895

10-Nov-05

www.vishay.com

ESH1PB, ESH1PC & ESH1PD

Vishay General Semiconductor

Electrical Characteristics

(T_A= 25 °C unless otherwise specified)

Parameter

Maximum instantaneous forward

voltage ⁽¹⁾

Test condition

Symbol Value

Unit

at I_F= 0.7 A, T_J= 25 °C

at I_F= 1 A, T_J= 25 °C

V_F

0.86

0.90

(1)

T_J= 25 °C

I_R

1.0

µA

Maximum reverse current at rated V_R

voltage

T_J= 125 °C

Maximum reverse current

at V_R= 20 V, T_J= 150 °C

I_R

t_rr

µA

Maximum reverse recovery time

Typical reverse recovery time

at I_F= 0.5 A, I_R= 1 A, I_rr= 0.25 A

at I_F= 1.0 A, V_R= 30 V di/dt = 50 A/µs, I_rr= 10 % IRM T_J= 25 °C

at I_F= 1.0 A, V_R= 30 V di/dt = 50 A/µs, I_rr= 10 % IRM T_J= 100 °C

Typical reverse recovery time

Typical junction capacitance

at I_F= 1.0 A, V_R= 30 V di/dt = 50 A/µs, I_rr= 10 % IRM T_J= 25 °C

at I_F= 1.0 A, V_R= 30 V di/dt = 50 A/µs, I_rr= 10 % IRM T_J= 100 °C

Q_rr

C_J

at 4.0 V, 1 MHz

Thermal Characteristics

(T_A= 25 °C unless otherwise specified)

Parameter

Typical thermal resistance ⁽²⁾

Symbol

R_θJA

R_θJL

ESH1PB

ESH1PC

ESH1PD

Unit

°C/W

105

R_θJC

Notes:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

(2) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0 mm copper pad areas. R_θJLis

measured at the terminal of cathode band. R_θJCis measured at the top centre of the body

Ratings and Characteristics Curves

(T_A= 25 °C unless otherwise specified)

1.2

1.0

0.8

0.6

0.4

TL measured

at the cathode band terminal

0.2

105 115

Lead Temperature(°C)

Figure 1. Forward Current Derating Curve

125

135 145 155 165 175

100

Number of Cycles at 50 H

Figure 2. Maximum Non-Repetitive Peak Forward Surge Current

www.vishay.com

Document Number 88895

10-Nov-05

ESH1PB, ESH1PC & ESH1PD

Vishay General Semiconductor

100

1000

T_J= 175 °C

T_J= 150 °C

100

T_J= 25 °C

0.1

T_J= 125 °C

0.8 1.0

0.01

0.2

0.4

0.6

1.2

1.4

1.6

0.1

100

Instantaneous Forward Voltage (V)

Reverse Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics

Figure 5. Typical Junction Capacitance

1000

100

T_J= 175 °C

100

T_J= 150 °C

T_J= 125 °C

T_J= 25 °C

0.1

0.01

0.1

100

40 50

100

Percent of Rated Peak Reverse Voltage (%)

t, Pulse Duration (sec.)

Figure 4. Typical Reverse Leakage Characteristics

Figure 6. Typical Transient Thermal impedance

Package dimensions in inches (millimeters)

DO-220AA (SMP)

0.012 (0.30) REF

Cathode band

0.036 (0.91)

0.024 (0.61)

0.053 (1.35)

0.041 (1.05)

0.086 (2.18)

0.074 (1.88)

0.032 (0.80)

0.016 (0.40)

0.103 (2.60)

0.087 (2.20)

0.142 (3.61)

0.126 (3.19)

0.158 (4.00)

0.146 (3.70)

0.030

(0.762)

0.105

(2.67)

0.025

(0.635)

0.013 (0.35)

0.004 (0.10)

0.045 (1.15)

0.033 (0.85)

0.050

(1.27)

0.100

(2.54)

0.012 (0.30)

0.000 (0.00)

0.018 (0.45)

0.006 (0.15)

Document Number 88895

10-Nov-05

www.vishay.com

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,

or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

www.vishay.com

ESH1PD-HE3 [VISHAY]

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