ES3DE3 [VISHAY]

DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN, Rectifier Diode;


型号：	ES3DE3
厂家：	VISHAY
描述：	DIODE 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB, LEAD FREE, PLASTIC, SMC, 2 PIN, Rectifier Diode 功效瞄准线光电二极管
文件：	总4页 (文件大小：305K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ES3A thru ES3D

Vishay General Semiconductor

Surface Mount Ultrafast Plastic Rectifier

Major Ratings and Characteristics

I_F(AV)

V_RRM

I_FSM

t_rr

3.0 A

50 V to 200 V

100 A

20 ns

V_F

0.90 V

T_jmax.

150 °C

DO-214AB (SMC)

Features

Mechanical Data

• Glass passivated chip junction

Case: DO-214AB (SMC)

• Ideal for automated placement

Epoxy meets UL 94V-0 Flammability rating

• Ultrafast recovery times for high efficiency

• Low forward voltage, low power losses

• High forward surge capability

• Meets MSL level 1, per J-STD-020C

• Solder Dip 260 °C, 40 seconds

Terminals: Matte tin plated leads, solderable per

J-STD-002B and JESD22-B102D

E3 suffix for commercial grade, HE3 suffix for high

reliability grade (AEC Q101 qualified)

Polarity: Color band denotes cathode end

Typical Applications

For use in high frequency rectification and freewheel-

ing application in switching mode converters and

inverters for consumer, computer and Telecommuni-

cation

Maximum Ratings

T_A= 25 °C unless otherwise specified

Parameter

Device marking code

Symbol

ES3A

ES3B

ES3C

ES3D

Unit

Maximum repetitive peak reverse voltage

V_RRM

V_RMS

V_DC

100

150

200

Maximum RMS voltage

105

150

140

200

Maximum DC blocking voltage

100

Maximum average forward rectified current at T_L= 100 °C

I_F(AV)

I_FSM

3.0

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

100

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

°C

Document Number 88589

28-Jul-05

www.vishay.com

ES3A thru ES3D

Vishay General Semiconductor

Electrical Characteristics

T_A= 25 °C unless otherwise specified

Parameter

Test condition

Symbol ES3A

V_F

ES3B

ES3C

ES3D

Unit

at 3.0 A ⁽¹⁾

Maximum instantaneous

forward voltage

0.90

Maximum DC reverse current

at rated DC blocking voltage

T_A= 25 °C

T_A= 100 °C

I_R

500

µA

Maximum reverse recovery

time

I_F= 0.5 A, I_R= 1.0 A, I_rr= 0.25 A

t_rr

Maximum reverse recovery

time

I_F= 3.0 A, V_R= 30 V,

T_J= 25 °C

T_J= 100 °C

di/dt = 50 A/µs, I_rr= 10 % I_RM

Maximum stored charge

I_F= 3.0 A, V_R= 30 V, di/dt = 50 T_J= 25 °C

Q_rr

C_J

A/µs, I_rr= 10 % I_RM

T_J= 100 °C

Typical junction capacitance at 4.0 V, 1 MHz

Notes:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

Thermal Characteristics

T_A= 25 °C unless otherwise specified

Parameter

Typical thermal resistance⁽¹⁾

Symbol

R_θJA

R_θJL

ES3A

ES3B

ES3C

ES3D

Unit

°C/W

Notes:

(1) Units mounted on P.C.B. with 0.31 x 0.31" (8.0 x 8.0 mm) copper pad areas

Ratings and Characteristics Curves

(T_A= 25 °C unless otherwise specified)

3.0

2.0

1.0

150

8.3 ms Single Half Sine-Wave

at T^L= 100 °C

125

100

Resistive or Inductive Load

P.C.B. Mounted on 0.31 x 0.31”

(8.0 x 8.0 mm) Copper Pad Areas

100

90 100 110 120 130 140 150

Lead Temperature (°C)

Number of Cycles at 60 Hz

Figure 1. Maximum Forward Current Derating Curve

Figure 2. Maximum Non-Repetitive Peak Forward Surge Current

www.vishay.com

Document Number 88589

28-Jul-05

ES3A thru ES3D

Vishay General Semiconductor

100

TJ = 25 °C

f = 1.0 MHz

Vsig = 50m Vp-p

Tj = 150 °C

Tj = 125 °C

Tj = 100 °C

0,1

0,01

Tj = 25 °C

0,1

0,3

0,5

0,7

0,9

1,1

1,3

0.1

100

Reverse Voltage (V)

Instantaneous Forward Voltage (V)

Figure 3. Typical Instantaneous Forward Characteristics

Figure 5. Typical Junction Capacitance

10000

Tj = 150 °C

Tj = 125 °C

Tj = 100 °C

1000

100

Tj = 25 °C

0,1

100

Percent of Rated Peak Reverse Voltage (%)

Figure 4. Typical Reverse Leakage Characteristics

Package outline dimensions in inches (millimeters)

DO-214AB (SMC)

Mounting Pad Layout

Cathode Band

0.185 MAX.

(4.69 MAX.)

0.126 (3.20)

0.114 (2.90)

0.246 (6.22)

0.220 (5.59)

0.126 MIN.

(3.20 MIN.)

0.280 (7.11)

0.060 MIN.

(1.52 MIN.)

0.260 (6.60)

0.012 (0.305)

0.006 (0.152)

0.320 REF

0.103 (2.62)

0.079 (2.06)

0.060 (1.52)

0.030 (0.76)

0.008 (0.2)

0 (0)

0.320 (8.13)

0.305 (7.75)

Document Number 88589

28-Jul-05

www.vishay.com

Legal Disclaimer Notice

Vishay

Notice

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,

or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by

estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's

terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express

or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness

for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.

Customers using or selling these products for use in such applications do so at their own risk and agree to fully

indemnify Vishay for any damages resulting from such improper use or sale.

Document Number: 91000

Revision: 08-Apr-05

www.vishay.com

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