DG9636 [VISHAY]
Dual SPDT Analog Switch; 双路SPDT模拟开关
| 型号： | DG9636 |
| 厂家： | 
VISHAY |
| 描述： | Dual SPDT Analog Switch |
| 文件： | 总10页 (文件大小：184K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DG9636
Vishay Siliconix
Dual SPDT Analog Switch
DESCRIPTION
FEATURES
The DG9636 is a CMOS, dual SPDT analog switch designed
to operate from + 2.7 V to + 12 V, single supply. All control
logic inputs have a guaranteed 1.65 V logic HIGH threshold
when operation from a + 12 V power supply. This makes the
DG9636 ideally suited to interface directly with low voltage
micro-processor control signals.
Processed with high density CMOS technology, the DG9636
has a 83 Ω channel ON resistance while providing ultra low
parasitic capacitance of 2 pF for CS(OFF) and 7 pF for
CD(ON). Other performance features are: 720 MHz - 3 dB
bandwidth, - 67 dB Cross Talk and - 58 dB Off isolation at
10 MHz frequency.
•
•
•
•
•
•
•
Leakage current < 0.5 nA max. at 85 °C
Low switch capacitance (Csoff, 2 pF typ.)
DS(on) - 83 Ω max.
Fully specified with single supply operation at 12 V
Low voltage, 1.65 V CMOS/TTL compatible
720 MHz, - 3 dB bandwidth
Excellentisolationandcrosstalkperformance(typ. >-60dB
at 10 MHz)
Fully specified from - 40 °C to 85 °C and - 40 °C to + 125 °C
Latch-up current 300 mA per JESD78
Lead (Pb)-free low profile miniQFN-10 (1.4 mm x 1.8 mm
x 0.55 mm)
R
RoHS
COMPLIANT
•
•
•
Key applications for the DG9636 are logic level translation,
pulse generator, and high speed or low noise signal
switching in precision instrumentations and portable device
designs.
•
Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
•
•
•
•
•
•
High-end data acquisition
Medical instruments
Precision instruments
High speed communications applications
Automated test equipment
Sample and hold applications
The DG9636 is available in space saving 1.4 mm x 1.8 mm
miniQFN10 package.
As a committed partner to the community and the
environment, Vishay Siliconix manufactures this product with
lead (Pb)-free device termination. The miniQFN-10 package
has a nickel-palladium-gold device termination and is
represented by the lead (Pb)-free "-E4" suffix to the ordering
part number. The nickel-palladium-gold device terminations
meet all JEDEC standards for reflow and MSL rating.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG9636
miniQFN - 10L
S2A
7
S2B
6
8
V+
A1
A0
5 D2
9
D1
4
3
Logic
10
S1B
Yx
2
1
Pin 1: LONG LEAD
GND S1A
Top View
Pin 1
Device marking: Yx for DG9636
x = Date/Lot Traceability Code
TRUTH TABLE
Selected Input
On Switches
DG9636
A1
X
A0
0
D1 to S1A
D1 to S1B
D2 to S2A
D2 to S2B
X
1
0
X
1
X
Document Number: 65159
S10-2012-Rev. B, 06-Sep-10
www.vishay.com
1
DG9636
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
Package
Part Number
- 40 °C to 125 °C
10 pin miniQFN
10 pin miniQFN
DG9636EN-T1-E4
DG9636DN-T1-E4
- 40 °C to 85 °C
Notes:
• - 40 °C to 85 °C datasheet limits apply.
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
Parameter
A
Limit
Unit
V+ to GND
Digital Inputsa, VS, VD
14
V
(V+) + 0.3 or 30 mA, whichever occurs first
Continuous Current (Any Terminal)
Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle)
Storage Temperature
30
100
mA
- 65 to 150
208
°C
Power Dissipation (Package)b
Thermal Resistance (Package)b
10 pin miniQFNc, d
mW
10 pin miniQFN
357
°C/W
Notes:
a. Signals on SX, DX, or AX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 2.6 mW/°C above 70 °C.
d. Manual soldering with iron is not recommended for leadless components. The miniQFN-10 is a leadless package. The end of the lead terminal
is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be
guaranteed and is not required to ensure adequate bottom side solder interconnection.
SPECIFICATIONS FOR DUAL SUPPLIES
Test Conditions
- 40 °C to 125 °C - 40 °C to 85 °C
Unless Otherwise Specified
Parameter
Symbol
V+ = 12 V, VA0, A1 = 1.65 V, 0.5 Va Temp.b
Typ.c
Min.d Max.d Min.d Max.d Unit
Analog Switch
Analog Signal Rangee
VANALOG
RDS(on)
Full
12
12
V
Room
IS = 1 mA, VD = + 11.3 V
Full
83
110
140
110
125
On-Resistance
Room
IS = 1 mA, VD = + 11.3 V
Full
2
4
9
4
6
On-Resistance Match
ΔRON
Ω
Room
Full
33
45
55
45
50
On-Resistance Flatness RFLATNESS IS = 1 mA, VD = 0.7 V, 6.5 V, 11.3 V
Room
Full
0.01
0.01
0.01
- 1
- 18
1
18
- 1
- 2
1
2
IS(off)
Switch Off
Leakage Current
V+ = 12 V,
D = 1 V/11 V, VS = 11 V/1 V
V
Room
Full
- 1
- 18
1
18
- 1
- 2
1
2
ID(off)
ID(on)
nA
Channel On
Leakage Current
V+ = 12 V,
D = VS 11 V/1 V
Room
Full
- 1
- 18
1
18
- 1
- 2
1
2
V
Digital Control
IIL
IIH
VAX = 0.5 V
VAX = 1.65 V
f = 1 MHz
Full
Full
0.005
0.005
3
- 0.1
- 0.1
0.1
0.1
- 0.1
- 0.1
0.1
0.1
Input Current, VIN Low
Input Current, VIN High
Input Capacitancee
µA
pF
CIN
Room
Dynamic Characteristics
Room
Full
30
15
15
70
90
70
80
Turn-On Time
tON
tOFF
tBBM
RL = 300 Ω, CL = 35 pF
Room
Full
55
75
55
65
Turn-Off Time
ns
see figure 1, 2
Room
Full
5
2
5
2
Break-Before-Make
Charge Injectione
Off Isolatione
Bandwidthe
QINJ
OIRR
BW
Vg = 0 V, Rg = 0 Ω, CL = 1 nF
RL = 50 Ω, CL = 5 pF, f = 10 MHz
RL = 50 Ω
Room
Room
Room
23.5
- 58
720
pC
dB
MHz
Channel-to-Channel
Crosstalke
XTALK
RL = 50 Ω, CL = 5 pF, f = 10 MHz
Room
- 67
dB
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2
Document Number: 65159
S10-2012-Rev. B, 06-Sep-10
DG9636
Vishay Siliconix
SPECIFICATIONS FOR DUAL SUPPLIES
Test Conditions
- 40 °C to 125 °C - 40 °C to 85 °C
Unless Otherwise Specified
Parameter
Symbol
V+ = 12 V, VA0, A1 = 1.65 V, 0.5 Va Temp.b
Typ.c
Min.d Max.d Min.d Max.d Unit
Dynamic Characteristics
Source Off Capacitancee
CS(off)
CD(on)
Room
2
f = 1 MHz
pF
%
Channel On
Room
7.7
Capacitancee
Total Harmonic
Distortione
Signal = 1 VRMS, 20 Hz to 20 kHz,
THD
Room
0.01
RL = 600 Ω
Power Supplies
Room
Full
0.001
0.5
1
0.5
1
Power Supply Current
I+
VIN = 0 V, or V+
µA
Room
Full
- 0.001
- 0.5
- 1
- 0.5
- 1
Ground Current
IGND
SPECIFICATIONS FOR SINGLE SUPPLY
Test Conditions
- 40 °C to 125 °C - 40 °C to 85 °C
Unless Otherwise Specified
V+ = 5 V, VA0, A1 = 1.4 V, 0.5 Va
Parameter
Symbol
Temp.b Typ.c
Min.d Max.d Min.d
Max.d
Unit
Analog Switch
Analog Signal Rangee
VANALOG
RDS(on)
Full
5
5
V
Room
Full
120
3
170
250
170
200
On-Resistance
IS = 1 mA, VD = + 3.5 V
IS = 1 mA, VD = + 3.5 V
Ω
Room
Full
5
12
5
10
On-Resistance Match
ΔRON
IS(off)
ID(off)
ID(on)
Room
Full
0.01
0.01
0.01
- 1
- 18
1
18
- 1
- 2
1
2
Switch Off
Leakage Current
V+ = 5.5 V,
VD = 1 V/4.5 V, VS = 4.5 V/1 V
Room
Full
- 1
- 18
1
18
- 1
- 2
1
2
nA
Channel On
Leakage Current
Room
Full
- 1
- 18
1
18
- 1
- 2
1
2
V+ = 5.5 V, VS = VD = 1 V/4.5 V
Digital Control
Input Current, VIN Low
Input Current, VIN High
Input Capacitance
IL
IH
VAX = 0.5 V
VAX = 1.4 V
f = 1 MHz
Full
Full
0.005
0.005
3
- 0.1
- 0.1
0.1
0.1
- 0.1
- 0.1
0.1
0.1
µA
pF
CIN
Room
Dynamic Characteristics
Room
Full
55
30
36
Turn-On Time
tON
tOFF
tBMM
RL = 300 Ω, CL = 35 pF
Room
Full
Turn-Off Time
ns
see figure 1, 2
Room
Full
Break-Before-Make-Time
Charge Injectione
Off-Isolatione
Crosstalke
QINJ
OIRR
XTALK
BW
CL = 1 nF, RGEN = 0 Ω, VGEN = 0 V
f = 10 MHz, RL = 50 Ω, CL = 5 pF
RL = 50 Ω
Full
10
pC
dB
Room
Room
Room
- 58
- 68
610
Bandwidthe
MHz
%
Total Harmonic
Signal = 1 VRMS, 20 Hz to 20 kHz,
THD
CS(off)
CD(on)
Room
2.2
2.1
8.1
Distortione
RL = 600 Ω
Source Off Capacitancee
f = 1 MHz
Room
pF
Channel On
Capacitancee
Power Supplies
Room
Full
0.001
0.5
1
0.5
1
Power Supply Current
I+
VIN = 0 V, or V+
µA
Room - 0.001
Full
- 0.5
- 1
- 0.5
- 1
Ground Current
IGND
Document Number: 65159
S10-2012-Rev. B, 06-Sep-10
www.vishay.com
3
DG9636
Vishay Siliconix
SPECIFICATIONS FOR SINGLE SUPPLY
Test Conditions
- 40 °C to + 125 °C - 40 °C to + 85 °C
Unless Otherwise Specified
V+ = 3 V, VA0, A1 = 1.4 V, 0.5 Va
Parameter
Symbol
Temp.b Typ.c
Min.d
Max.d
Min.d
Max.d Unit
Analog Switch
Analog Signal Rangee
VANALOG
RDS(ON)
Full
3
3
V
Room
Full
200
5
245
325
245
290
On-Resistance
IS = 1 mA, VD = + 1.5 V
IS = 1 mA, VD = + 1.5 V
Ω
Room
Full
6
13
6
11
On-Resistance Match
ΔRON
IS(off)
ID(off)
Room
Full
0.01
0.01
- 1
- 18
1
18
- 1
- 2
1
2
Switch Off
Leakage Current
(for 16 pin miniQFN)
V+ = 3.3 V, V- = 0 V
V
D = 1 V/3 V, VS = 3 V/1 V
Room
Full
- 1
- 18
1
18
- 1
- 2
1
2
nA
Channel On
Leakage Current
(for 16 pin miniQFN)
V+ = 3.3 V, V- = 0 V,
Room
Full
0.01
- 1
- 18
1
18
- 1
- 2
1
2
ID(on)
V
S = VD = 1 V/3 V
Digital Control
Input Current, VIN Low
Input Current, VIN High
Input Capacitance
IL
IH
VAX = 0.5 V
VAX = 1.4 V
f = 1 MHz
Full
Full
0.005
0.005
3.1
- 0.1
- 0.1
0.1
0.1
- 0.1
- 0.1
0.1
0.1
µA
pF
CIN
Room
Dynamic Characteristics
Room
Full
96
60
77
Enable Turn-On Time
Enable Turn-Off Time
tON
tOFF
tBMM
RL = 300 Ω, CL = 35 pF
Room
Full
ns
see figure 1, 2
Break-Before-Make-
Time
Room
Full
Charge Injectione
Off-Isolatione
Crosstalke
QINJ
OIRR
XTALK
BW
CL = 1 nF, RGEN = 0 Ω, VGEN = 0 V
f = 10 MHz, RL = 50 Ω, CL = 5 pF
RL = 50 Ω
Full
6.6
- 57
- 69
525
pC
dB
Room
Room
Room
Bandwidthe
MHz
%
Total Harmonic
Signal = 1 VRMS, 20 Hz to 20 kHz,
THD
CS(off)
CD(on)
Room
2.2
2.1
8.3
Distortione
RL = 600 Ω
Source Off Capacitancee
f = 1 MHz
Room
pF
Channel On
Capacitancee
Power Supplies
Room
Full
0.001
0.5
1
0.5
1
Power Supply Current
I+
VIN = 0 V, or V+
µA
Room - 0.001
Full
- 0.5
- 1
- 0.5
- 1
Ground Current
IGND
Notes:
a. VIN = input voltage to perform proper function.
b. Room = 25 ºC, Full = as determined by the operating temperature.
c. Typical value are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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4
Document Number: 65159
S10-2012-Rev. B, 06-Sep-10
DG9636
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
500
450
400
350
300
250
200
150
100
50
350
T = 25 °C
IS = 1 mA
V+ = 3.0 V
S = 1 mA
VCC = 2.7 V
VCC = 3.0 V
I
300
250
+ 85 °C
+ 25 °C
+ 125 °C
- 40 °C
200
150
100
50
VCC = 5.0 V
VCC = 12.0 V
VCC = 10.8 V
VCC = 13.2 V
12 14
0
0
0
2
4
6
8
10
0
0.5
1
1.5
2
2.5
3
VD - Analog Voltage (V)
VD - Analog Voltage (V)
On-Resistance vs. Single Supply Voltage
On-Resistance vs. Analog Voltage and Temperature
350
300
250
200
150
100
50
150
125
100
75
V+ = 12.0 V
V+ = 5.0 V
IS = 1 mA
I
= 1mA
S
+ 125 °C
- 40 °C
+ 25 °C
+ 85 °C
+ 125 °C
+ 85 °C
+ 25 °C
- 40 °C
50
25
0
0
0
1
2
3
4
5
6
7
8
9
10 11 12
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
VD - Analog Voltage (V)
VD - Analog Voltage (V)
On-Resistance vs. Analog Voltage and Temperature
On-Resistance vs. Analog Voltage and Temperature
100 µA
10 000
1000
V+ = +12.0 V
10 µA
1 µA
V+ = 13.2 V
100 nA
1 nA
ID(off)
100
10
1
IGND
I+
IS(off)
100 pA
ID(on)
10 pA
1 pA
10
100
1K
Input Switching Frequency (Hz)
Supply Current vs. Input Switching Frequency
10K
100K
1M
10M
- 60 - 40 - 20
0
20
Temperature (°C)
Leakage Current vs. Temperature
40 60
80 100 120 140
Document Number: 65159
S10-2012-Rev. B, 06-Sep-10
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5
DG9636
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25
0
T = 25 °C
L = 1 nF
LOSS
20
15
- 10
C
V+ = 12.0 V
RL = 50
- 20
- 30
- 40
- 50
- 60
- 70
- 80
- 90
- 100
V+ = 12.0 V
10
5
0
- 5
XTALK
OIRR
V+ = 3.0 V
- 10
- 15
- 20
- 25
V+ = 5.0 V
0
1
2
3
4
5
6
7
8
9
10 11 12
100K
1M
10M
Frequency (Hz)
Insertion Loss, Off-Isolation,
Crosstalk vs. Frequency
100M
1G
VS - Analog Voltage (V)
Charge Injection vs. Analog voltage
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
VIH
VIL
2
3
4
5
6
7
8
9
10 11 12 13 14 15
V+ - Supply Voltage (V)
Switching Threshold vs. Supply Voltage
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Document Number: 65159
S10-2012-Rev. B, 06-Sep-10
DG9636
Vishay Siliconix
TEST CIRCUITS
V+
V+
tr < 5 ns
tf < 5 ns
V
CC
50 %
V+
A0 or A1
S1A or S2A
VAX
0 V
S1B or S2B
D1 or D2
50 Ω
VS1Aor VS2A
90 %
90 %
50 %
VO
VO
GND
35 pF
300 Ω
0 V
tOFF
tON
S1A or S2A ON
Figure 1. Enable Switching Time
V+
V+
tr < 5 ns
tf < 5 ns
VCC
50 %
SxA - SxB
V+
A0
A1
VA0,A1
0 V
50 Ω
VSxA or VSxB
80 %
VO
VO
D1 or D2
GND
35 pF
300 Ω
0 V
tD
Figure 2. Break-Before-Make
V+
tr < 5 ns
tf < 5 ns
V+
VCC
A0 or A1
SxA or SxB
GND
ON
OFF
OFF
VAX
0 V
Rg
VO
Vg
ΔVO
VO
D1 or D2
CL
1 nF
Charge Injection = ΔVO X CL
Figure 3. Charge Injection
Document Number: 65159
S10-2012-Rev. B, 06-Sep-10
www.vishay.com
7
DG9636
Vishay Siliconix
TEST CIRCUITS
V+
V+
V+
Network Analyzer
Network Analyzer
V+
VIN
VIN
V+
A0 or A1
A0
A1
S1A or S2A
SxA or SxB
Rg = 50 Ω
Rg = 50 Ω
Vg
Vg
VOUT
VOUT
D1 or D2
D1 or D2
GND
GND
50 Ω
50 Ω
VOUT
VIN
VOUT
VIN
Off Isolation = 20 log
Insertion Loss = 20 log
Figure 5. Off-Isolation
Figure 4. Insertion Loss
V+
V+
V+
Network Analyzer
V+
S1A or S2A
VIN
A0 or A1
V+
Rg = 50
A0 or A1
S1A or S2A
V+
Vg
|
to
|
D1 or D2
Impedance
Analyzer
S2A or S2B
VOUT
S1B or S2B
50 Ω
D1 or D2
GND
50 Ω
V-
GND
V-
VOUT
Cross Talk = 20 log
V
IN
Figure 6. Crosstalk
Figure 7. Source/Drain Capacitance
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65159.
www.vishay.com
8
Document Number: 65159
S10-2012-Rev. B, 06-Sep-10
Package Information
Vishay Siliconix
MINI QFN-10L CASE OUTLINE
MILLIMETERS
NAM.
0.55
INCHES
DIM
MIN.
0.50
0.00
0.15
MAX.
0.60
0.05
0.25
MIN.
0.0197
0.000
0.006
NAM.
0.0217
-
MAX.
0.0236
0.002
0.010
A
A1
b
-
0.20
0.008
c
0.15 REF
1.80
0.006 REF
0.071
D
E
1.75
1.35
1.85
1.45
0.069
0.053
0.073
0.057
1.40
0.055
e
0.40 BSC
0.40
0.016 BSC
0.016
L
0.35
0.45
0.45
0.55
0.014
0.018
L1
0.50
0.0177
0.0197
0.0217
ECN T-07039-Rev. A, 12-Feb-07
DWG: 5957
Document Number: 74496
12-Feb-07
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1
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
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liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
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product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
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Document Number: 91000
Revision: 11-Mar-11
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