DG9422DV-T1 [VISHAY]
Precision Low-Voltage, Low-Glitch CMOS Analog Switches; 精密，低电压，低毛刺CMOS模拟开关
| 型号： | DG9422DV-T1 |
| 厂家： | 
VISHAY |
| 描述： | Precision Low-Voltage, Low-Glitch CMOS Analog Switches |
| 文件： | 总10页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DG9421, DG9422
Vishay Siliconix
Precision Low-Voltage, Low-Glitch CMOS Analog Switches
DESCRIPTION
FEATURES
Using BiCMOS wafer fabrication technology allows the
DG9421, DG9422 to operate on single and dual supplies.
•
2.7- thru 12 V single supply or
2.7- thru 6-dual supply
Pb-free
Available
•
•
•
•
•
•
Low on-resistance - RDS(on): 2.0 Ω at 12 V
Fast switching - tON: 28 ns
- tOFF: 22 ns
Designed for optimal performance at single 5 V and dual
5 V, the DG9421, DG9422 combine low and flat
on-resistance (3 Ω), fast speed (tON = 38 ns) and is well
suited for applications where signal switching accuracy, low
noise and low distortion is critical.
RoHS*
COMPLIANT
TTL and low voltage logic
Low leakage: 10 pA (typ.)
> 2000 V ESD protection
The DG9421 and DG9422 respond to opposite control logic
as shown in the Truth Table.
BENEFITS
•
•
•
•
•
•
High accuracy
High speed, low glitch
Single and dual supply capability
Low RON in small TSOP package
Low leakage
Low power consumption
APPLICATIONS
•
•
•
•
•
•
Automatic test equipment
Data acquisition
XDSL and DSLAM
PBX systems
Reed relay replacement
Audio and video signal routing
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
TSOP-6
V+
COM
V-
IN
1
2
3
6
5
4
TRUTH TABLE
NC
GND
Logic
DG9421
ON
DG9422
0
1
OFF
ON
Top View
OFF
Device Marking:
Logic "0" ≤ 0.8 V
Logic "1" ≥ 2.4 V
DG9421DV = 4Exxx
Switches Shown for Logic "0" Input
TSOP-6
V+
COM
V-
IN
ORDERING INFORMATION
1
2
3
6
5
4
NO
Temp. Range
Package
Part Number
DG9421DV-T1
GND
DG9421DV-T1-E3
- 40 °C to 85 °C
6/Pin TSOP
Top View
DG9422DV-T1
DG9422DV-T1-E3
Device Marking:
DG9422DV = 4Fxxx
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70679
S-82265-Rev. F, 29-Sep-08
www.vishay.com
1
DG9421, DG9422
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
- 0.3 to 13
7
Unit
V+ to V-
V
GND to V-
- 0.3 to (V+ + 0.3)
or 50 mA, whichever occurs first
VINa, VS, VD
V/mA
mA
Continuous Current (Any Terminal)
Peak Current, S or D (Pulsed at 1 ms, 10 % Duty Cycle)
Storage Temperature
50
100
- 65 to 150
570
°C
Power Dissipation (Packages)b
6-Pin TSOPc
mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 7 mW/°C above 25 °C.
a
SPECIFICATIONS Single Supply 12 V
Limits
Test Conditions
- 40 °C to 85°C
Unless Otherwise Specified
V+ = 12 V, V- = 0 V, VIN = 2.4 V, 0.8 Vf
Parameter
Symbol
Temp.b Min.d
Typ.c
Max.d
Unit
Analog Switch
Analog Signal Rangea
VANALOG
RDS(on)
Full
0
12
V
Drain-Source
On-Resistance
Room
Full
3
3.4
V+ = 10.8 V, V- = 0 V, IS = 5 mA, VD = 2/9 V
VD = 1/11 V, VS = 11/1 V
2.0
Ω
Room
Full
- 1
- 10
1
10
IS(off)
ID(off)
ID(on)
Switch Off
Leakage Current
Room
Full
- 1
- 10
1
10
nA
Channel-On
Leakage Current
Room
Full
- 1
- 10
1
10
VS = VD = 11/1 V
Digital Control
IIL
VIN Under Test = 0.8 V
VIN Under Test = 2.4 V
Input Current, VIN Low
Input Current, VIN High
Dynamic Characteristics
Full
Full
- 1
- 1
0.02
0.02
1
1
µA
ns
IIH
Room
Full
20
25
45
49
Turn-On Timee
tON
RL = 300 Ω, CL = 35 pF, VS = 5 V
See Figure 2
Room
Full
47
59
Turn-Off Timee
tOFF
Charge Injectione
Off-Isolatione
Source Off Capacitancee
Drain Off Capacitancee
Channel On Capacitancee
Power Supplies
Q
Room
Room
Room
Room
Room
43
- 60
31
pC
dB
Vg = 0 V, Rg = 0 Ω, CL = 1 nF
RL = 50 Ω, CL = 5 pF , f = 1 MHz
OIRR
CS(off)
CD(off)
CD(on)
f = 1 MHz
30
pF
71
Room
Full
0.02
1
5
Positive Supply Current
Negative Supply Current
Ground Current
I+
I-
Room
Full
- 1
- 5
- 0.002
- 0.002
VIN = 0 or 12 V
µA
Room
Full
- 1
- 5
IGND
www.vishay.com
2
Document Number: 70679
S-82265-Rev. F, 29-Sep-08
DG9421, DG9422
Vishay Siliconix
a
SPECIFICATIONS Dual Supply 5 V
Limits
Test Conditions
- 40 °C to 85 °C
Unless Otherwise Specified
V+ = 5 V, V- = - 5 V, VIN = 2.4 V, 0.8 Vf
Parameter
Symbol
Temp.b Min.d
Typ.c
Max.d
Unit
Analog Switch
Analog Signal Rangee
VANALOG
RDS(on)
Full
- 5
5
V
V+ = 5 V, V- = - 5 V
Drain-Source
On-Resistance
Room
Full
2.2
3.2
3.6
Ω
IS = 5 mA, VD
=
3.5 V
Room
Full
- 1
1
IS(off)
ID(off)
ID(on)
- 10
10
V+ = 5.5 V, V- = - 5.5 V
VD 4.5 V, VS = -/+ 4.5 V
Switch Off
Leakage Currentg
=
Room
Full
- 1
- 10
1
10
nA
V+ = 5.5 V, V- = - 5.5 V
VS = VD 4.5 V
Channel-On
Room
Full
- 1
- 10
1
10
Leakage Currentg
=
Digital Control
Input Current, VIN Lowe
Input Current, VIN Highe
Dynamic Characteristics
Full
Full
- 1
- 1
0.02
0.02
1
1
IIL
VIN Under Test = 0.8 V
VIN Under Test = 2.4 V
µA
ns
IIH
Room
Full
38
45
63
68
tON
Turn-On Time
RL = 300 Ω, CL = 35 pF, VS
=
3.5 V
See Figure 2
Room
Full
83
97
tOFF
Turn-Off Time
Charge Injectione
Off-Isolatione
Source Off Capacitancee
Drain Off Capacitancee
Channel On Capacitancee
Power Supplies
Q
Room
Room
Room
Room
Room
207
- 57
32
pC
dB
Vg = 0 V, Rg = 0 Ω, CL = 1 nF
RL = 50 Ω, CL = 5 pF , f = 1 MHz
OIRR
CS(off)
CD(off)
CD(on)
f = 1 MHz
31
pF
71
Room
Full
0.03
1
5
Positive Supply Currente
Negative Supply Currente
Ground Currente
I+
I-
Room
Full
- 1
- 5
- 0.002
- 0.002
VIN = 0 or 5 V
µA
Room
Full
- 1
- 5
IGND
Document Number: 70679
S-82265-Rev. F, 29-Sep-08
www.vishay.com
3
DG9421, DG9422
Vishay Siliconix
a
SPECIFICATIONS Single Supply 5 V
Limits
Test Conditions
- 40 °C to 85 °C
Unless Otherwise Specified
V+ = 5 V, V- = 0 V, VIN = 2.4 V, 0.8 Vf
Parameter
Symbol
Temp.b Min.d
Typ.c
Max.d
Unit
Analog Switch
Analog Signal Rangee
VANALOG
RDS(on)
Full
0
5
V
V+ = 4.5 V, IS = 5 mA,
Room
Full
3.6
6.0
6.6
Drain-Source
On-Resistance
Ω
VD = 1 V, 3.5 V
Dynamic Characteristics
Room
Hot
43
30
25
67
74
Turn-On Timee
tON
RL = 300 Ω, CL = 35 pF, VS = 3.5 V,
ns
See Figure 2
Room
Hot
67
80
Turn-Off Timee
tOFF
Q
Charge Injectione
Vg = 0 V, Rg = 0 Ω, CL = 1 nF
Room
pC
Power Supplies
Room
Hot
0.02
1
5
Positive Supply Currente
Negative Supply Currente
Ground Currente
I+
I-
Room
Hot
- 1
- 5
- 0.002
- 0.002
VIN = 0 or 5 V
µA
Room
Hot
- 1
- 5
IGND
www.vishay.com
4
Document Number: 70679
S-82265-Rev. F, 29-Sep-08
DG9421, DG9422
Vishay Siliconix
a
SPECIFICATIONS Single Supply 3 V
Limits
Test Conditions
- 40 °C to 85 °C
Unless Otherwise Specified
V+ = 3 V, V- = 0 V, VIN = 0.4 Vf
Parameter
Symbol
Tempb Min.d
Typ.c
Max.d
Unit
Analog Switch
Analog Signal Rangee
VANALOG
RDS(on)
Full
0
3
V
V+ = 2.7 V, V- = 0 V
IS = 5 mA, VD = 0.5, 2.2 V
Room
Full
7.3
8.8
10.1
Drain-Source
On-Resistance
Ω
Room
Full
- 1
- 10
1
10
IS(off)
ID(off)
ID(on)
Switch Off
V+ = 3.3 V, V- = 0 V
Leakage Currentg
VS = 1, 2 V, VD = 2, 1 V
Room
Full
- 1
- 10
1
10
nA
Channel-On
Leakage Currentg
V+ = 3.3 V, V- = 0 V
Room
Full
- 1
- 10
1
10
V
D = VS = 1, 2 V
Digital Control
Input Current, VIN Lowe
IIL
VIN Under Test = 0.4 V
VIN Under Test = 2.4 V
Full
Full
- 1
- 1
0.02
0.02
1
1
µA
ns
Input Current, VIN Highe
IIH
Dynamic Characteristics
Room
Full
90
32
110
125
tON
Turn-On Time
Turn-Off Time
RL = 300 Ω, CL = 35 pF, VS = 1.5 V
See Figure 2
Room
Full
84
99
tOFF
Charge Injectione
Off-Isolatione
Source Off Capacitancee
Drain Off Capacitancee
Channel On Capacitancee
Vg = 0 V, Rg = 0 Ω, CL = 1 nF
Q
Room
Room
Room
Room
Room
31
- 60
35
pC
dB
RL = 50 Ω, CL = 5 pF , f = 1 MHz
OIRR
CS(off)
CD(off)
CD(on)
f = 1 MHz
34
pF
77
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 70679
S-82265-Rev. F, 29-Sep-08
www.vishay.com
5
DG9421, DG9422
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
10
8
10
I
= 5 mA
T = 25 °C
S
I
S
= 5 mA
V+ = 3.0 V
8
6
4
2
0
A
B
V+ = 3.0 V
6
V+ = 5.0 V
A
C
V+ = 5.0 V
V+ = 10.8 V
B
C
4
2
A = 85 °C
B = 25 °C
C = - 40 °C
V+ = 12 V
10
0
0
1
2
3
4
5
0
2
4
6
8
12
V
- Analog Voltage (V)
V
- Analog Voltage (V)
COM
COM
RON vs. VCOM and Supply Voltage
RON vs. Analog Voltage and Temperature
8
6
4
2
0
1000
V
I
=
5 V
V+ = 5 V
= 5 mA
V
= 0 V
S
IN
100
A
B
A = 85 °C
B = 25 °C
C = - 40 °C
C
10
- 5
- 3
- 1
Drain Voltage (V)
RON vs. Analog Voltage and Temperature
1
3
5
- 60 - 40 - 20
0
20
Temperature (°C)
Supply Current vs. Temperature
40
60
80
100
10 m
100
V+ = 5 V
V- = 0 V
1 m
100 µ
10 µ
10
I
(on)
1 µ
100 n
10 n
I
(off)
1
10
100
1K
Input Switching Frequences (Hz)
Supply Current vs. Input Switching Frequency
10K
100K
1M
10M
- 60 - 40 - 20
0
20
Temperature (°C)
Leakage Current vs. Temperature
40
60
80
100
www.vishay.com
6
Document Number: 70679
S-82265-Rev. F, 29-Sep-08
DG9421, DG9422
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
100
60
V+ = 5 V
V- = 0 V
V+ = 5 V
10
I
/I
NO(off) NC(off)
20
I
(on)
I
COM(off)
- 20
- 60
- 100
I
COM(on)
1
I
(off)
0.1
- 60 - 40 - 20
0
1
2
3
4
5
0
20
Temperature (°C)
Leakage Current vs. Temperature
40
60
80
100
V
, V , V
- Analog Voltage (V)
COM NO NC
Leakage vs. Analog Voltage
120
100
80
60
40
20
0
400
300
V+ = 12 V
V- = 0 V
200
t
V+ = 3 V
ON
100
I
COM(on)
0
t
V+ = 5 V
ON
- 100
- 200
- 300
- 400
t
V+ = 5 V
OFF
t
V+ = 3 V
OFF
I
/I
NO(off) NC(off)
t
V+ = 12 V
I
t
V+ = 12 V
OFF
COM(off)
ON
- 60 - 40 - 20
0
20
40
60
80
100
0
2
4
6
8
10
12
V
, V , V
COM NO NC
- Analog Voltage (V)
Temperature (°C)
Switching Time vs. Temperature and
Supply Voltage (DG9421)
Leakage vs. Analog Voltage
2.5
2.0
1.5
1.0
0.5
0.0
10
0
Loss
V+ = 3 V
- 10
- 20
- 30
- 40
R
L
= 50 Ω
OIRR
- 50
- 60
- 70
- 80
- 90
0
2
4
6
8
10
V+ - Supply Voltage (V)
Switching Threshold vs. Supply Voltage
12
14
100K
1M
10M
100M
1G
Frequency (MHz)
Insertion Loss, Off Isolation vs. Frequency
Document Number: 70679
S-82265-Rev. F, 29-Sep-08
www.vishay.com
7
DG9421, DG9422
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
300
250
300
V+ = 12 V
250
200
200
150
100
50
150
100
V = 5 V
50
0
0
V+ = 5 V
V+ = 3 V
- 50
- 100
- 150
- 200
- 250
- 300
- 50
- 100
- 150
- 200
- 250
- 300
- 6
- 4
- 2
0
2
4
6
0
2
4
6
8
10
12
V
- Analog Voltage (V)
V
- Analog Voltage (V)
COM
COM
Charge Injection vs. Analog Voltage
Charge Injection vs. Analog Voltage
SCHEMATIC DIAGRAM Typical Channel
V+
NC/NO
V-
Level
Shift/
Drive
V
IN
V+
GND
V-
COM
Figure 1.
TEST CIRCUITS
V+
V+
V
t < 5 ns
t < 5 ns
f
NC/NO
0 V
r
Logic
Input
50 %
t
S
D
OFF
V
S
V
O
Switch
Input*
V
S
V
O
IN
GND
90 %
R
300 Ω
C
L
35 pF
L
V-
V-
0 V
Switch
Output
t
ON
90 %
V
- V
O
S
Switch
Input*
C
L
(includes fixture and stray capacitance)
R
L
Note: * Logic input waveform is inverted for switches that
have the opposite logic sense control
V
= V
S
O
R
L
+ r
DS(on)
Figure 2. Switching Time
www.vishay.com
8
Document Number: 70679
S-82265-Rev. F, 29-Sep-08
DG9421, DG9422
Vishay Siliconix
TEST CIRCUITS
ΔV
O
V+
V+
V
O
X
IN
R
g
S
D
OFF
OFF
ON
ON
OFF
OFF
V
O
IN
C
10 nF
V
g
L
3 V
V-
V-
GND
IN
X
Q = ΔV x C
O
L
IN dependent on switch configuration Input polarity determined
X
by sense of switch.
Figure 3. Charge Injection
V+
C
V+
S
D
V
1
1
2
S
R
g
= 50 Ω
50 Ω
IN
1
0 V, 2.4 V
NC
S
D
2
V
O
R
L
IN
2
0 V, 2.4 V
GND
V-
V-
C
V
V
S
X
Isolation = 20 log
TALK
O
C = RF bypass
Figure 4. Crosstalk
V+
V+
C
C
V+
V
O
S
D
V
S
V+
S
R
g
= 50 Ω
R
50 Ω
L
IN
Meter
0 V, 2.4 V
IN
HP4192A
Impedance
Analyzer
GND
V-
V-
C
0 V, 2.4 V
or Equivalent
D
GND
V-
V-
C
V
V
S
Off Isolation = 20 log
C = RF Bypass
O
Figure 6. Source/Drain Capacitances
Figure 5. Off Isolation
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70679.
Document Number: 70679
S-82265-Rev. F, 29-Sep-08
www.vishay.com
9
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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