DG9414DQ [VISHAY]
Single 4 x 1 and Dual 2 x 1 Multiplexers; 单4× 1和双2× 1多路复用器
| 型号： | DG9414DQ |
| 厂家： | 
VISHAY |
| 描述： | Single 4 x 1 and Dual 2 x 1 Multiplexers |
| 文件： | 总9页 (文件大小：79K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DG9414/9415
Vishay Siliconix
Single 4 x 1 and Dual 2 x 1 Multiplexers
FEATURES
BENEFITS
APPLICATIONS
D Low Voltage Operation (+2.7 to +12 V)
D High Accuracy
D Battery Operated Systems
D Portable Test Equipment
D Sample and Hold Circuits
D Cellular Phones
D Low On-Resistance - rDS(on): 14
D Low Power Consumption
D TTL Compatible
ꢀ
D Simple Logic Interface
D Reduce Board Space
D ESD Protection >2000 V (Method 3015.7)
D Available in TSSOP-10 (aka MSOP-10)
D Communication Systems
D Networking Equipment
DESCRIPTION
The DG9414, a single 4 to 1 multiplexer, and the DG9415, a
dual 2 x 1 multiplexer, are monolithic CMOS analog devices
designed for high performance low voltage operation.
Combining low power, high speed, low on-resistance and
small physical size, the DG9414 and DG9415 are ideal for
portable and battery powered applications requiring high
performance and efficient use of board space.
Both the DG9414 and DG9415 are built on Vishay Siliconix’s
low voltage BCD-15 process. Minimum ESD protection, per
Method 3015.7, is 2000 volts. An epitaxial layer prevents
latchup. Break-before-make is guaranteed for DG9415.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG9414DQ
DG9415DQ
NO
NO
NO
V+
NO
COM
NC
V+
2
3
1
1
1
1
1
2
3
4
5
10
9
1
2
3
4
5
10
9
COM
COM
2
NO
NO
NC
0
2
8
8
EN
A
0
EN
Logic
2
7
7
GND
A
1
GND
A
0
Logic
6
6
EN
A
A
ON SWITCH
EN
A
0
ON SWITCH
1
0
1
0
0
0
0
X
X
None
1
X
None
0
0
1
1
0
1
0
1
NO
NO
NO
NO
NC
NC
0
1
2
3
1
2
0
0
0
1
NO
NO
1
2
X = Don’t Care
X = Don’t Care
ORDERING INFORMATION
Temp Range
Package
Part Number
DG9414DQ
-40 to 85°C
MSOP-10
DG9415DQ
Document Number: 71766
S-03220—Rev. F, 17-Feb-03
www.vishay.com
1
DG9414/9415
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND
ESD (Method 3015.7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . > 2000 V
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +13 V
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C
Notes:
a
IN, COM, NC, NO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
a. Signals on S , D , or IN exceeding V+ or V- will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
X
X
X
Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "20 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "40 mA
(Pulsed at 1ms, 10% duty cycle)
SPECIFICATIONS (V+ = 3 V)
Test Conditions
Otherwise Unless Specified
Limits
-40 to 85_C
Typb
e
Minc
Maxc
Unit
Parameter
Analog Switch
Symbol
Tempa
V+ = 3 V, "10%, V = 0.4 or 2.4 V
IN
d
Analog Signal Range
V
Full
0
V+
V
ANALOG
Room
Full
63
97
101
On-Resistance
d
r
ON
V+ = 2.7 V, V
= 1.0 V/1.5 V/2.0 V
or I = 5 mA
NC
COM
r
ON
Match
ꢁ r
ON
Room
Room
3
11
33
ꢀ
I
NO
r
ON
d, f
r
ON
Flatness
14
Flatness
I
NO/NC(off)
Room
Full
-1
-10
1
10
g
NO or NC Off Leakage Current
V+ = 3.3 V, V or V = 0.3 V / 3 V
NO
NC
V
= 3 V / 0.3 V
COM
Room
Full
-1
-10
1
10
g
COM Off Leakage Current
I
nA
COM(off)
V+ = 3.3 V
Room
Full
-1
-10
1
10
g
Channel-On Leakage Current
I
COM(on)
V
= V or V = 0.3 V / 3 V
COM
NO
NC
Digital Control
g
Input Current
IINL or IINH
V
= 0 or V+
Full
Full
Full
-1.0
1.6
1.0
0.4
ꢂ
A
IN
d
Input High Voltage
V
INH
V
d
Input Low Voltage
V
INL
Dynamic Characteristics
Room
Full
102
45
125
142
Turn-On Time
t
ON
V
or V = 1.5 V
Room
Full
68
75
NO
NC
Turn-Off Time
t
OFF
ns
Break-Before-Make Time
Transition Time
t
Room
7
78
81
D
Room
Full
128
144
t
V
= 1.5 V/0 V, V = 0 V/1.5 V
NO NC
trans
d
Charge Injection
Q
C = 1 nF, Vgen = 0 V, Rgen = 0
ꢀ
Room
Room
3
pC
dB
INJ
L
Off-Isolation
OIRR
R
L
= 50 ꢀ, C = 5 pF, f = 1 MHz
-58
L
Channel-to-Channel Crosstalk
(DG9415)
X
R
L
= 50 ꢀ, f = 1 MHz
Room
-64
TALK
DG9414
DG9415
DG9414
DG9415
DG9414
DG9415
Room
Room
Room
Room
Room
Room
11
10
26
13
43
25
C
C
NO(off),
NO, NC Off Capacitance
COM Off Capacitance
COM On Capacitance
NC(off)
C
f = 1 MHz
pF
COM(off)
COM(on)
C
Power Supply
Power Supply Range
V+
I+
2.7
3.3
1.0
V
h
Power Supply Current
V+ = 3.3 V, V = 0 or 3.3 V
Full
ꢂA
IN
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e.
f.
V
= input voltage to perform proper function.
IN
Difference of min and max values.
g. Guaranteed by 12-V leakage testing, not production tested.
h. Guaranteed by worst case test conditions and not subject to test.
Document Number: 71766
S-03220—Rev. F, 17-Feb-03
www.vishay.com
2
DG9414/9415
Vishay Siliconix
SPECIFICATIONS (V+ = 5 V)
Limits
Test Conditions
-40 to 85_C
Typb
Otherwise Unless Specified
Minc
Maxc
Unit
e
Parameter
Analog Switch
Symbol
Tempa
V+ = 5 V, "10%, V = 0.8 or 2.4 V
IN
d
Analog Signal Range
VANALOG
Full
0
V+
V
Room
Full
33
56
60
On-Resistance
r
ON
V+ = 4.5 V, V
= 1.5 V/2.5 V/3.5 V
or I = 10 mA
NC
COM
r
r
Match
ꢁ
r
Room
Room
2
10
20
ꢀ
ON
ON
I
NO
r
ON
f
Flatness
10
ON
Flatness
I
NO/NC(off)
Room
Full
-1
-10
1
10
g
NO or NC Off Leakage Current
V+ = 5.5 V, V or V = 1 V / 4.5 V
NO
NC
V
= 4.5 V / 1 V
COM
Room
Full
-1
-10
1
10
g
COM Off Leakage Current
I
nA
COM(off)
Room
Full
-1
-10
1
10
g
Channel-On Leakage Current
I
V+ = 5.5 V, V = V or V = 1 V / 4.5 V
COM NO NC
COM(on)
Digital Control
h
Input Current
IINL or IINH
V
= 0 or V+
Full
Full
Full
-1.0
1.8
1.0
0.6
ꢂA
IN
d
Input High Voltage
V
INH
V
d
Input Low Voltage
V
INL
Dynamic Characteristics
Room
Full
56
25
77
86
h
Turn-On Time
t
ON
Room
Full
46
50
V
or V = 3.0 V
ns
ns
NO
NC
h
Turn-Off Time
t
OFF
h
Break-Before-Make Time
t
Room
7
34
47
D
Room
Full
77
84
Transition Time
Off-Isolation
t
V
= 3 V/0 V, V = 0 V/3 V
NO NC
trans
OIRR
R
L
= 50 ꢀ, C = 5 pF, f = 1 MHz
Room
Room
-58
-64
L
dB
pC
Channel-to-Channel Crosstalk
(DG9415)
X
R = 50 ꢀ, f = 1 MHz
L
TALK
d
Charge Injection
Q
INJ
C = 1 nF, V
L
= 0 V, R = 0
gen
ꢀ
Room
Room
Room
Room
Room
Room
Room
6
gen
DG9414
11
10
25
13
42
24
C
NO(off),
NO, NC Off Capacitance
COM Off Capacitance
COM On Capacitance
C
NC(off)
DG9415
DG9414
DG9415
DG9414
DG9415
C
f = 1 MHz
pF
COM(off)
COM(on)
C
Power Supply
Power Supply Range
V+
I+
4.5
5.5
1.0
V
h
Power Supply Current
V+ = 5.5 V, V = 0 or 5.5 V
Full
ꢂ
A
IN
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e.
f.
V
= input voltage to perform proper function.
IN
Difference of min and max values.
g. Guaranteed by 12-V leakage testing, not production tested.
h. Guaranteed by worst case test conditions and not subject to test.
Document Number: 71766
S-03220—Rev. F, 17-Feb-03
www.vishay.com
3
DG9414/9415
Vishay Siliconix
SPECIFICATIONS (V+ = 12 V)
Limits
Test Conditions Unless Specified
-40 to 85_C
e
V+ = 12 V, V = 0.8 V, 2.4 V
IN
Parameter
Analog Switch
Symbol
Tempa
Minc
Typb
Maxc
Unit
d
Analog Signal Range
V
Full
0
12
9
V
ANALOG
r
Match
ꢁ r
ON
Room
1
1
ON
ON
r
ON
d, f
r
Flatness
Room
10
Flatness
ꢀ
Room
Full
14
17
19
On-Resistance
r
ON
V+ = 10.8 V, I , I = 25 mA, V = 2/9 V
COM
NO NC
I
I
Room
Full
-1
-10
1
10
NO(off),
NC(off)
Switch Off
Leakage Current
V
= 1/11 V
COM
V
, V = 11/1 V
NO NC
Room
Full
-1
-10
1
10
I
nA
COM(off)
Channel On
Leakage Current
Room
Full
-1
-10
1
10
I
V
, V = V
= 11/1 V
COM(on)
NO NC
COM
Digital Control
Input Current
I
or I
V = 0 or V+
IN
Full
Full
Full
-1
1
ꢂ
A
INL
INH
d
Input High Voltage
V
2.4
INH
V
d
Input Low Voltage
V
0.8
INL
Dynamic Characteristics
Room
Full
33
17
55
59
h
Turn-On Time
t
ON
R
= 300 ꢀ , C = 35 pF
L
L
V
, V = 5 V See Figure 2
NO NC
Room
Full
40
41
h
Turn-Off Time
t
OFF
ns
DG419L Only, V , V = 5 V
NC NO
h
Break-Before-Make Time Delay
t
Room
2
24
29
D
R
L
= 300 ꢀ , C = 35 pF
L
Room
Full
56
59
Transition Time
t
V
V
= 5 V/0 V, V = 0 V/5 V
NO NC
trans
d
Charge Injection
Q
INJ
= 0 V, R = 0 ꢀ , C = 1 nF
Room
Room
Room
Room
Room
Room
Room
Room
Room
13
-58
-64
10
pC
dB
g
g
L
d
Off Isolation
OIRR
R
L
= 50 ꢀ , C = 5 pF
f = 1 MHz
L
d
Channel-to-Channel Crosstalk
X
TALK
DG9414
DG9415
DG9414
DG9415
DG9414
DG9415
C
NO(off),
d
NO, NC Off Capacitance
C
NC(off)
10
24
COM Off Capacitance
C
V
= 0 or V+, f = 1 MHz
IN
pF
COM(off)
13
40
d
COM On Capacitance
C
OM(on)
23
Power Supplies
Positive Supply Current
I+
V
= 0 or 12 V
Full
1
ꢂ
A
IN
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e.
f.
V
= input voltage to perform proper function.
IN
Difference of min and max values.
g. Guaranteed by 12-V leakage testing, not production tested.
h. Guaranteed by worst case test conditions and not subject to test.
Document Number: 71766
S-03220—Rev. F, 17-Feb-03
www.vishay.com
4
DG9414/9415
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
r
vs. V
and Supply Voltage
r vs. Analog Voltage and Temperature
ON
ON
COM
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
A = 85_C
B = 25_C
T = 25_C
C = -40_C
V+ = 3.0 V
I
S
= 5 mA
V+ = 3.0 V
= 5 mA
A
I
S
B
C
V+ = 5.0 V
I
S
= 10 mA
V+ = 12.0 V
= 25 mA
A
V+ = 5.0 V
I
S
I
S
= 10 mA
B
C
B
A
V+ = 12.0 V
I
S
= 25 mA
C
0
3
6
9
12
0
2
4
6
8
10
12
V
- Analog Voltage (V)
V
- Analog Voltage (V)
COM
COM
Supply Current vs. Input Switching Frequency
Supply Current vs. Temperature
10000
1000
100
10
10 m
1 m
V
, V = 0 V
AX EN
V+ = 12 V
100
10
1
ꢂ
ꢂ
ꢂ
V+ = 12.0 V
100 n
10 n
1 n
V+ = 5.0 V
1
10
100
1 K
10 K
100 K
1 M
10 M
-60
-40
-20
0
20
40
60
80
100
Temperature (_C)
Input Switching Frequency (Hz)
Leakage Current vs. Temperature
Leakage vs. Analog Voltage
1000
100
10
100
60
V+ = 12 V
V+ = 12.0 V
I
COM(off)
I
COM(on)
20
I
COM(off)
I
, I
NO(off) NC(off)
-20
-60
-100
I
/I
NO(off) NC(off)
I
COM(on)
1
-60
-40
-20
0
20
40
60
80
100
0
2
4
6
8
10
12
Temperature (_C)
V
, V , V
COM NO NC
- Analog Voltage (V)
Document Number: 71766
S-03220—Rev. F, 17-Feb-03
www.vishay.com
5
DG9414/9415
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transistion Time vs. Temperature (DG9414)
Transistion Time vs. Temperature (DG9415)
120
100
80
60
40
20
0
120
t
V+ = 3 V
100
80
60
40
20
0
TRANS-
t
V+ = 3 V
TRANS-
t
V+ = 3 V
TRANS+
t
t
V+ = 3 V
V+ = 5 V
TRANS+
t
V+ = 5 V
TRANS+
t
V+ = 5 V
TRANS-
TRANS-
t
V+ = 5 V
TRANS+
t
V+ = 12 V
t
V+ = 12 V
TRANS+
TRANS+
t
V+ = 12 V
t
V+ = 12 V
TRANS-
TRANS-
-60
-40
-20
0
20
40
60
80
100
-60
-40
-20
0
20
40
60
80
100
Temperature (_C)
Temperature (_C)
Insertion Loss, Off -Isolation
Crosstalk vs. Frequency (DG9414)
Switching Time vs. Temperature
140
120
100
80
10
-10
-30
Loss
t
V+ = 3 V
ON
60
t
V+ = 5 V
-50
-70
-90
ON
t
t
V+ = 3 V
V+ = 5 V
OFF
X
TALK
OIRR
40
t
V+ = 12 V
= 50
V+ = 12 V
ON
OFF
R
L
ꢀ
20
t
V+ = 12 V
OFF
0
-60
-40
-20
0
20
40
60
80
100
100 k
1 M
10 M
Frequency (Hz)
100 M
1 G
Temperature (_C)
Insertion Loss, Off -Isolation
Crosstalk vs. Frequency (DG9415)
Switching Threshold vs. Supply Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
Loss
-10
-30
-50
-70
-90
X
TALK
OIRR
V+ = 12 V
= 50
R
L
ꢀ
2
4
6
8
10
12
14
100 k
1 M
10 M
100 M
1 G
Frequency (Hz)
V+ - Supply Voltage (V)
Document Number: 71766
S-03220—Rev. F, 17-Feb-03
www.vishay.com
6
DG9414/9415
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Charge Injection vs. Analog Voltage (DG9414)
Charge Injection vs. Analog Voltage (DG9415)
50
50
30
30
V+ = 3 V
V+ = 3 V
10
-10
-30
-50
10
V+ = 5 V
V+ = 5 V
-10
-30
-50
V+ = 12 V
V+ = 12 V
0
2
4
6
8
10
12
0
2
4
6
8
10
12
V
- Analog Voltage (V)
V
- Analog Voltage (V)
COM
COM
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S
V-
Level
Shift/
V
IN
Drive
V+
D
GND
Figure 1.
TEST CIRCUITS
t <5 ns
r
t <5 ns
f
V+
V+
Logic
V
INH
Input
50%
V
INL
Switch
Switch
Output
t
OFF
Input
NO or NC
COM
V
IN
V
OUT
V
t
OUT
90%
0.9 x V
OUT
IN
GND
R
300
C
L
35 pF
L
ꢀ
0 V
Switch
Output
ON
C
L
(includes fixture and stray capacitance)
Note: Logic input waveform is inverted for switches that
have the opposite logic sense control
R
L
V
= V
IN
OUT
R
L
+ r
ON
Figure 2. Switching Time
Document Number: 71766
S-03220—Rev. F, 17-Feb-03
www.vishay.com
7
DG9414/9415
Vishay Siliconix
TEST CIRCUITS
V+
V+
V
Logic
Input
INH
t <5 ns
t <5 ns
f
r
V
INL
COM
NO
V
V
O
NO
NC
V
NC
R
300
C
L
35 pF
L
V
= V
NC
NO
ꢀ
IN
V
90%
O
GND
Switch
Output
0 V
t
D
t
D
C
L
(includes fixture and stray capacitance)
Figure 3. Break-Before-Make
+15 V
V+
t <5 ns
r
t <5 ns
f
Logic
Input
V
INH
NO or NC
NC or NO
COM
50%
V
S1
V
O
V
INL
V
t
t
TRANS-
S2
TRANS+
R
300
C
L
35 pF
L
V
S1
ꢀ
IN
V
01
90%
GND
Switch
Output
10%
V
02
C
L
(includes fixture and stray capacitance)
V
S2
R
L
V
= V
S
O
R
L
+ r
ON
Figure 4. Transition Time
ꢁ V
V+
O
V
O
V+
NO or NC
R
g
COM
IN
IN
V
O
OFF
ON
OFF
C
L
V
g
1 nF
Q = ꢁ V x C
O
L
GND
IN dependent on switch configuration Input polarity determined
by sense of switch.
V
= 0 - V+
IN
Figure 5. Charge Injection
Document Number: 71766
S-03220—Rev. F, 17-Feb-03
www.vishay.com
8
DG9414/9415
Vishay Siliconix
TEST CIRCUITS
V+
V+
C
V
V
NO or NC
COM
S
IN
R
g
= 50 ꢀ
50
ꢀ
IN
0 V or 2.4 V
NC or NO
V
OUT
GND
V
OUT
X
Isolation = 20 log
TALK
V
IN
C = RF bypass
Figure 6. Crosstalk
V+
V+
V+
C
C
COM
NO or NC
COM
R
g
= 50
ꢀ
Meter
R
50
L
IN
IN
HP4192A
Impedance
Analyzer
ꢀ
0V, 2.4 V
0 V, 2.4 V
or Equivalent
GND
NO or NC
GND
f = 1 MHz
V
COM
Off Isolation = 20 log
C = RF Bypass
V
NO/NC
Figure 7. Off Isolation
Figure 8. Source/Drain Capacitances
Document Number: 71766
S-03220—Rev. F, 17-Feb-03
www.vishay.com
9
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