DG636 [VISHAY]
0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch; 0.5 pC的电荷注入， 100 pA的泄漏，双路SPDT模拟开关
| 型号： | DG636 |
| 厂家： | 
VISHAY |
| 描述： | 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch |
| 文件： | 总10页 (文件大小：190K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
New Product
DG636
Vishay Siliconix
0.5 pC Charge Injection, 100 pA Leakage,
Dual SPDT Analog Switch
DESCRIPTION
FEATURES
The DG636 is an analog CMOS, dual SPDT switch,
designed to operate from a + 2.7 V to + 12 V single supply or
from 2.7 V to 5.0 V, dual supplies. The DG636 is fully
specified at + 3 V, + 5 V and 5 V. All control logic inputs
have guaranteed 2 V logic high limits when operating from
+ 5 V or 5 V supplies and 1.4 V when operating from a 3 V
supply.
The DG636 switches conduct equally well in both directions
and offer rail to rail analog signal handling. < 1 pC low charge
injection, coupled with very low switch capacitance and
leakage current makes this product ideal for use in precision
instrumentation applications. Operating temperature range
is specified from - 40 °C to + 125 °C. The DG636 is available
in 14 lead TSSOP and the space saving 1.8 x 2.6 mm
miniQFN package.
•
Ultra low charge injection ( 0.5 pC, typ. over the
full analog signal range)
•
•
•
•
Leakage current < 0.5 nA max. at 85 °C
Low switch capacitance (Csoff, 2 pF typ.)
Low rDS(on) - 115 Ω max.
Fully specified with single supply operation at 3.0 V, 5.0 V
and dual supplies at 5.0 V
RoHS
COMPLIANT
•
•
•
Low voltage, 2.5 V CMOS/TTL compatible
600 MHz, - 3 dB bandwidth
Excellent isolation and crosstalk performance (typ. > - 60 dB
at 10 MHz)
•
•
Fully specified from - 40 °C to 85 °C and - 40 °C to + 125 °C
14 Pin TSSOP and 16 Pin miniQFN package (1.8 x 2.6 mm)
APPLICATIONS
•
•
•
•
•
•
High-end data acquisition
Medical instruments
Precision instruments
High speed communications applications
Automated test equipment
Sample and hold applications
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG636
DG636
mQFN-16
TSSOP14
NC
A0
16
NC
A1
13
15
14
A1
1
2
3
4
14
13
12
A0
ENABLE
V-
1
2
3
4
GND
V+
ENABLE
V-
12
11
10
9
Logic
Logic
GND
V+
S2A
S2B
S1A
S1A
S1B
11 S2A
Rxx
5
6
7
11
S1B
D1
S2B
D2
9
Pin 1
5
6
7
8
Device Marking:Rxx for DG636
(miniQFN16)
D1
D2
NC
NC
NC
NC
8
Top View
xx = Date/Lot Traceability Code
Top View
ENABLE = Hi, all switches are controlled by
addr pins. ENABLE = Lo, all switches are off.
Document Number: 69901
S-80239-Rev. B, 04-Feb-08
www.vishay.com
1
New Product
DG636
Vishay Siliconix
TRUTH TABLE
Selected Input
On Switches
DG636
Enable
Input
A1
X
A0
X
L
All Switches Open
D1 to S1A, D2 to S2A
D1 to S1B, D2 to S2A
D1 to S1A, D2 to S2B
D1 to S1B, D2 to S2B
H
H
H
H
L
L
L
H
L
H
H
H
ORDERING INFORMATION
Temp. Range
Package
Part Number
DG636EQ-T1-E3
DG636EN-T1-E4
14-Pin TSSOP
16-Pin miniQFN
- 40 °C to 125 °Ca
Notes:
a. - 40 °C to 85 °C datasheet limits apply.
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted
Parameter
A
Limit
14
Unit
V+ to V-
GND to V-
7
V
(V-) - 0.3 to (V+) + 0.3
or 30 mA, whichever occurs first
Digital Inputsa, VS, VD
Continuous Current (Any Terminal)
Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle)
Storage Temperature
30
100
mA
°C
- 65 to 150
450
14-Pin TSSOPc
Power Dissipation (Package)b
Thermal Resistance (Package)b
mW
16-Pin miniQFNd, e
14-Pin TSSOP
525
178
152
°C/W
16-Pin miniQFN
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 5.6 mW/°C above 70 °C.
d. Derate 6.6 mW/°C above 70 °C.
e. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead terminal
is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be
guaranteed and is not required to ensure adequate bottom side solder interconnection.
www.vishay.com
2
Document Number: 69901
S-80239-Rev. B, 04-Feb-08
New Product
DG636
Vishay Siliconix
SPECIFICATIONS FOR DUAL SUPPLIES
Test Conditions
- 40 to 125 °C
- 40 to 85 °C
Unless Otherwise Specified
V+ = 5 V, V- = - 5 V
Typ.c
Min.d Max.d Min.d Max.d Unit
V
IN A0, A1 and ENABLE = 2.0 V, 0.8 Va
Temp.b
Parameter
Symbol
Analog Switch
Analog Signal Rangee
VANALOG
rDS(on)
Full
- 5
5
- 5
5
V
Room
Full
70
115
160
115
140
IS = 1 mA, VD = - 3 V, 0 V, + 3 V
IS = 1 mA, VD 3 V
On-Resistance
Room
Full
1
5
6.5
5
6.5
ΔrON
rFLATNESS
IS(off)
=
On-Resistance Match
Ω
Room
Full
10
20
33
20
22
IS = 1 mA, VD = - 3 V, 0 V, + 3 V
On-Resistance Flatness
Room
Full
0.01
0.01
- 0.1
- 18
0.1
18
- 0.1
- 0.5
0.1
0.5
V+ = 5.5 V, V- = - 5.5 V
Switch Off
Leakage Current
VD
=
4.5 V, VS
=
4.5 V
Room
Full
- 0.1
- 18
0.1
18
- 0.1
- 0.5
0.1
0.5
ID(off)
nA
V+ = 5.5 V, V- = - 5.5 V,
S = VD 4.5 V
Channel On
Leakage Current
Room
Full
0.01
- 0.1
- 18
0.1
18
- 0.1
- 0.5
0.1
0.5
ID(on)
V
=
Digital Control
VIN A0, A1 and ENABLE
Under Test = 0.8 V
IIL
Input Current, VIN Low
Full
0.005
- 0.1
- 0.1
0.1
0.1
- 0.1
- 0.1
0.1
0.1
µA
pF
VIN A0, A1 and ENABLE
Under Test = 2.0 V
IIH
Input Current, VIN High
Full
0.005
3.4
Input Capacitancee
CIN
f = 1 MHz
Room
Dynamic Characteristics
VS(CLOSE) = 3 V, VS(OPEN) = 0.0 V,
Room
Full
20
70
105
70
80
tTRANS
Transition Time
RL = 300 Ω, CL = 35 pF
Room
Full
16
15
60
90
60
65
tON
Turn-On Time
Turn-Off Time
RL = 300 Ω, CL = 35 pF
ns
VS
=
3 V
Room
Full
52
76
52
56
tOFF
VS = 3 V
15
Break-Before-Make
Time Delay
Room
Full
tD
5
5
RL = 300 Ω, CL = 35 pF
Charge Injectione
Q
Room
Room
Room
0.36
- 58
610
pC
dB
Vg = 0 V, Rg = 0 Ω, CL = 1 nF
RL = 50 Ω, CL = 5 pF, f = 10 MHz
RL = 50 Ω
Off Isolatione
Bandwidthe
OIRR
BW
MHz
Channel-to-Channel
Crosstalke
Source Off Capacitancee
Drain Off Capacitancee
XTALK
RL = 50 Ω, CL = 5 pF, f = 10 MHz
Room
- 88
dB
pF
CS(off)
CD(off)
Room
Room
2.1
4.2
f = 1 MHz
Channel On
CD(on)
THD
Room
Room
11.3
0.01
Capacitancee
Signal = 1 VRMS, 20 Hz to 20 kHz,
Total Harmonic
Distortione
%
RL = 600 Ω
Power Supplies
Room
Full
0.001
- 0.001
- 0.001
0.5
1
0.5
1
Power Supply Current
I+
I-
Room
Full
- 0.5
- 1
- 0.5
- 1
V
IN = 0 V, or V+
Negative Supply Current
Ground Current
µA
Room
Full
- 0.5
- 1
- 0.5
- 1
IGND
Document Number: 69901
S-80239-Rev. B, 04-Feb-08
www.vishay.com
3
New Product
DG636
Vishay Siliconix
SPECIFICATIONS FOR SINGLE SUPPLY
Test Conditions
- 40 to 125 °C
- 40 to 85 °C
Unless Otherwise Specified
V+ = 5 V, V- = 0 V
Temp.b Typ.c
Min.d Max.d Min.d Max.d Unit
V
IN A0, A1 and ENABLE = 2.0 V, 0.8 Va
Parameter
Symbol
Analog Switch
Analog Signal Rangee
VANALOG
rDS(on)
Full
5
5
V
Room
Full
120
3
170
250
170
200
IS = 1 mA, VD = + 3.5 V
IS = 1 mA, VD = + 3.5 V
On-Resistance
Ω
Room
Full
5
12
5
10
ΔrON
IS(off)
ID(off)
On-Resistance Match
Room
Full
0.01
0.01
- 0.1
- 18
0.1
18
- 0.1
- 0.5
0.1
0.5
V+ = 5.5 V, V- = 0 V
D = 1 V/4.5 V, VS = 4.5 V/1 V
Switch Off Leakage Current
V
Room
Full
- 0.1
- 18
0.1
18
- 0.1
- 0.5
0.1
0.5
nA
V+ = 5.5 V, V- = 0 V
Room
Full
0.01
- 0.1
- 18
0.1
18
- 0.1
- 0.5
0.1
0.5
ID(on)
Channel On Leakage Current
Digital Control
V
S = VD = 1 V/4.5 V
VIN A0, A1 and ENABLE
Under Test = 0.8 V
VIN A0, A1 and ENABLE
Under Test = 2.0 V
Input Current, VIN Low
IL
Full
0.005
- 0.1
- 0.1
0.1
0.1
- 0.1
- 0.1
0.1
0.1
µA
pF
Input Current, VIN High
IH
Full
0.005
4.3
CIN
Input Capacitance
f = 1 MHz
Room
Dynamic Characteristics
Room
Full
36
30
17
23
75
120
75
95
tTRANS
tON(EN)
tOFF(EN)
tBMM
Transition Time
VS(CLOSE) = 3 V, VS(OPEN) = 0.0 V,
Room
Full
70
102
70
80
Enable Turn-On Time
Enable Turn-Off Time
Break-Before-Make-Time
RL = 300 Ω, CL = 35 pF
ns
Room
Full
47
88
47
63
Room
Full
5
5
CL = 1 nF, RGEN = 0 Ω, VGEN = 0 V
f = 10 MHz, RL = 50 Ω, CL = 5 pF
RL = 50 Ω
Charge Injection
Off-Isolatione
Crosstalke
Q
Full
0.1
- 58
- 81
520
pC
dB
OIRR
XTALK
Room
Room
Room
Bandwidthe
BW
MHz
%
Signal = 1 VRMS, 20 Hz to 20 kHz,
Total Harmonic Distortion
THD
Room
0.009
RL = 600 Ω
Source Off Capacitancee
Drain Off Capacitancee
Channel On Capacitancee
Power Supplies
2.5
6.4
CS(off)
CD(off)
CD(on)
f = 1 MHz
Room
pF
11.3
Room
Full
0.001
0.5
1
0.5
1
Power Supply Current
Negative Supply Current
Ground Current
I+
I-
Room - 0.001
Full
- 0.5
- 1
- 0.5
- 1
V
IN = 0 V, or V+
µA
Room - 0.001
Full
- 0.5
- 1
- 0.5
- 1
IGND
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4
Document Number: 69901
S-80239-Rev. B, 04-Feb-08
New Product
DG636
Vishay Siliconix
SPECIFICATIONS FOR SINGLE SUPPLY
Test Conditions
- 40 to + 125 °C - 40 to + 85 °C
Unless Otherwise Specified
V+ = 3 V, V- = 0 V
Temp.b Typ.c
Min.d Max.d Min.d Max.d Unit
V
IN A0, A1 and ENABLE = 1.4 V, 0.6 Va
Parameter
Symbol
Analog Switch
Analog Signal Rangee
VANALOG
rDS(ON)
Full
3
3
V
Room
Full
200
5
245
325
245
290
IS = 1 mA, VD = + 1.5 V
IS = 1 mA, VD = + 1.5 V
On-Resistance
Ω
Room
Full
6
13
11
6
ΔrON
IS(off)
ID(off)
On-Resistance Match
Room
Full
0.01
0.01
- 0.1
- 18
0.1
18
- 0.1
- 0.5
0.1
0.5
V+ = 3.0 V, V- = 0 V
D = 1 V/3.0 V, VS = 3.0 V/1 V
Switch Off Leakage Current
V
Room
Full
- 0.1
- 18
0.1
18
- 0.1
- 0.5
0.1
0.5
nA
V+ = 3.0 V, V- = 0 V
Room
Full
0.01
- 0.1
- 18
0.1
18
- 0.1
- 0.5
0.1
0.5
ID(on)
Channel On Leakage Current
Digital Control
V
S = VD = 1 V/3.0 V
VIN A0, A1 and ENABLE
Under Test = 0.6 V
VIN A0, A1 and ENABLE
Under Test = 1.4 V
Input Current, VIN Low
IL
Full
0.005
- 1
- 1
1
1
- 1
- 1
1
1
µA
pF
Input Current, VIN High
IH
Full
0.005
4.3
CIN
Input Capacitance
f = 1 MHz
Room
Dynamic Characteristics
Room
Full
95
77
35
45
130
190
130
160
tTRANS
tON(EN)
tOFF(EN)
tBMM
Transition Time
VS(CLOSE) = 3.0 V, VS(OPEN) = 0.0 V,
Room
Full
108
161
108
131
Enable Turn-On Time
Enable Turn-Off Time
Break-Before-Make-Time
RL = 300 Ω, CL = 35 pF
ns
Room
Full
76
112
76
88
Room
Full
5
5
CL = 1 nF, RGEN = 0 Ω, VGEN = 0 V
f = 10 MHz, RL = 50 Ω, CL = 5 pF
RL = 50 Ω
Charge Injection
Off-Isolatione
Crosstalke
Q
Full
1.2
- 57
- 93
442
pC
dB
OIRR
XTALK
Room
Room
Room
Bandwidthe
BW
MHz
%
Signal = 1 VRMS, 20 Hz to 20 kHz,
Total Harmonic Distortion
THD
Room
0.09
RL = 600 Ω
Source Off Capacitancee
Drain Off Capacitancee
Channel On Capacitancee
Power Supplies
2.5
6.4
CS(off)
CD(off)
CD(on)
f = 1 MHz
Room
pF
11.7
Room
Full
0.001
0.5
1
0.5
1
Power Supply Current
Negative Supply Current
Ground Current
I+
I-
Room - 0.001
Full
- 0.5
- 1
- 0.5
- 1
V
IN = 0 V, or V+
µA
Room - 0.001
Full
- 0.5
- 1
- 0.5
- 1
IGND
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 69901
S-80239-Rev. B, 04-Feb-08
www.vishay.com
5
New Product
DG636
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C
350
160
140
120
100
80
T = 25 °C
S = 1 mA
VCC = 2.7 V
VCC = 3.0 V
V+ = + 2.7 V
V- = - 2.7 V
I
300
250
200
150
100
50
V+ = + 6.2 V
V- = - 6.2 V
V+ = + 5.0 V
V- = - 5.0 V
VCC = 5.0 V
60
VCC = 13.2 V
40
T = 25 °C
S = 1 mA
20
I
0
- 8
0
- 6
- 4
- 2
0
2
4
6
8
0
2
4
6
8
10
12
14
VD - Analog Voltage (V)
VD - Analog Voltage (V)
On-Resistance vs. VD (Single Supply Voltage)
On-Resistance vs. VD (Dual Supply Voltage)
500
450
400
350
300
250
200
150
100
50
400
350
300
250
200
150
100
50
V+ = 3.0 V, V- = 0 V
V+ = 5.0 V, V- = 0 V
IS = 1 mA
IS = 1 mA
+ 25 °C
- 40 °C
+ 125 °C
+ 85 °C
+ 125 °C
+ 85 °C
+ 25 °C
- 40 °C
0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
VD - Analog Voltage (V)
On-Resistance vs. Analog Voltage and Temperature
2
2.5
3
3.5
4
4.5
5
VD - Analog Voltage (V)
On-Resistance vs. Analog Voltage and Temperature
10 mA
250
225
200
175
150
125
100
75
V+ = 5.0 V, V- = - 5.0 V
1 mA
V+ = + 5.0 V
V- = - 5.0 V
IS = 1 mA
100 µA
10 µA
1 µA
I+
+ 125 °C
+ 85 °C
+ 25 °C
I-
IGND
- 40 °C
100 nA
1 nA
100 pA
10 pA
1 pA
50
25
0
- 5 - 4 - 3 - 2 - 1
VD - Analog Voltage (V)
On-Resistance vs. Analog Voltage and Temperature
0
1
2
3
4
5
10
100
1K
10K
100K
1M
10M
Input Switching Frequency (Hz)
Supply Current vs. Input Switching Frequency
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6
Document Number: 69901
S-80239-Rev. B, 04-Feb-08
New Product
DG636
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C
10000
1000
100
10
100000
V+ = 13.2 V
V- = 0 V
V+ = + 5.0 V
V- = - 5.0 V
ID(off)
10000
1000
IS(off)
ID(off)
100
ID(on)
ID(on)
IS(off)
10
1
1
- 60 - 40 - 20
0
20
40 60 80 100 120 140
- 60 - 40 - 20
0
20
40 60
80 100 120 140
Temperature (°C)
Temperature (°C)
Leakage Current vs. Temperature
Leakage Current vs. Temperature
0.8
0.6
10
0
LOSS
T = 25 °C
CL = 1 nF
- 10
- 20
- 30
- 40
- 50
- 60
- 70
- 80
- 90
- 100
0.4
V+ = 5.0 V
L = 50 Ω
0.2
R
V+ = + 3.0 V
V- = 0 V
0
V+ = + 5.0 V
V- = - 5.0 V
OIRR
- 0.2
- 0.4
- 0.6
- 0.8
XTALK
V+ = + 5.0 V
V- = 0 V
- 5 - 4 - 3 - 2
VS - Analog Voltage (V)
Charge Injection vs. Analog Voltage
- 1
0
1
2
3
4
5
100K
1M
10M
Frequency (Hz)
100M
1G
Insertion Loss, Off-Isolation, Crosstalk
vs. Frequency
100
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
RL = 600 Ω
VSignal = 1 VRMS
1
V+ = 3.0 V
V+ = 5.0 V
V
=
5.0 V
0.1
0.01
0.001
10
100
1000
Frequency (Hz)
Total Harmonic Distortion vs. Frequency
10000
100000
0
2
4
6
8
10
V+ - Supply Voltage (V)
Switching Threshold vs. Supply Voltage
12
14
Document Number: 69901
S-80239-Rev. B, 04-Feb-08
www.vishay.com
7
New Product
DG636
Vishay Siliconix
TEST CIRCUITS
V+
V+
tr < 5 ns
tf < 5 ns
VCC
50 %
VS1A or VS2A
VS2A or VS2B
S1A or S2A
S2A or S2B
A0
A1
VA0,A1
0 V
50 Ω
V+
VS1A or VS2A
VO
VO
D1 or D2
ENABLE
GND
50 %
90 %
V-
35 pF
300 Ω
tTRANS
tTRANS
V-
Figure 1. Transition Time
V+
V+
tr < 5 ns
tf < 5 ns
V
CC
50 %
V+
A0
S1A or S2A
VENABLE
0 V
A1
S1B or S2B
VS1Aor VS2A
90 %
90 %
50 %
VO
VO
D1 or D2
ENABLE
GND
V-
35 pF
300 Ω
0 V
50 Ω
tOFF
tON
S1A or S2A ON
V-
Figure 2. Enable Switching Time
V+
tr < 5 ns
tf < 5 ns
VCC
V+
50 %
SxA - SxB
A0
A1
V+
VA0,A1
0 V
50 Ω
VSxA or VSxB
80 %
VO
+
VO
D1 or D2
V
ENABLE
GND
V-
35 pF
300 Ω
0 V
V-
tD
Figure 3. Break-Before-Make
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8
Document Number: 69901
S-80239-Rev. B, 04-Feb-08
New Product
DG636
Vishay Siliconix
TEST CIRCUITS
V+
tr < 5 ns
tf < 5 ns
V+
VCC
A0
A1
Channel
Select
ON
OFF
OFF
VENABLE
0 V
Rg
SxA or SxB
VO
Vg
ΔVO
VO
D1 or D2
ENABLE
GND
V-
CL
1 nF
Charge Injection = ΔVO X CL
V-
Figure 4. Charge Injection
V+
V+
V+
Network Analyzer
Network Analyzer
V+
VIN
VIN
A0
A1
S1A or S2A
A0
A1
SxA or SxB
Rg = 50 Ω
Rg = 50 Ω
Vg
Vg
VOUT
VOUT
V+
D1 or D2
ENABLE
GND
D1 or D2
ENABLE
GND
V-
V-
50 Ω
50 Ω
V-
V-
VOUT
VOUT
VIN
Off Isolation = 20 log
Insertion Loss = 20 log
VIN
Figure 5. Insertion Loss
Figure 6. Off-Isolation
V+
V+
V+
Network Analyzer
V+
S1A or S2A
VIN
A0
A1
Rg = 50
A0
S1A or S2A
Vg
Channel
Select
|
A1
to
|
D1 or D2
Impedance
Analyzer
S2A or S2B
VOUT
S1B or S2B
ENABLE
GND
V+
50 Ω
D1 or D2
V-
ENABLE
GND
V+
50 Ω
V-
V-
V-
VOUT
Cross Talk = 20 log
V
IN
Figure 8. Source/Drain Capacitance
Figure 7. Crosstalk
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?69901.
Document Number: 69901
S-80239-Rev. B, 04-Feb-08
www.vishay.com
9
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
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