DG5043 [VISHAY]
Monolithic General-Purpose CMOS Analog Switch; 单片通用CMOS模拟开关型号: | DG5043 |
厂家: | VISHAY |
描述: | Monolithic General-Purpose CMOS Analog Switch |
文件: | 总3页 (文件大小:39K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DG5043
Vishay Siliconix
Monolithic General-Purpose CMOS Analog Switch
FEATURES
BENEFITS
APPLICATIONS
D "15-V Input Range
D Improved Signal Headroom
D Reduced Switching Errors
D No Shorting of Inputs
D Simple Interfacing
D Audio Switching
D On-Resistance: <50 W
D Break-Before-Make Switching
D TTL and CMOS Compatible
D Instrumentation
D Battery Powered Systems
DESCRIPTION
The DG5043 solid state analog switch is recommended for
general purpose applications in instrumentation, and process
control. Built on the Vishay Siliconix PLUS-40 high voltage
CMOS process, this device provides ease-of-use and
performance advantages to the system designer. Key
performance features of the DG5043 are 1-ms switching, low
power supply requirements, and break-before-make
switching. Each switch conducts equally well in either
direction, when on, and blocks up to 30 V peak-to-peak when
off. Off leakage current is 1-nA maximum. An epitaxial layer
prevents latch up. For new designs, DG403 is recommended.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Dual-In-Line
D
S
1
1
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
TRUTH TABLE
NC
IN
1
Logic
SW1, SW2
SW3, SW4
D
3
S
3
S
4
D
4
V–
0
1
OFF
ON
ON
OFF
GND
Logic “0” = v 0.8 V
Logic “1” = w 2 V
V
L
V+
ORDERING INFORMATION
NC
IN
2
Temp Range
Package
Part Number
D
2
S
2
0 to 70_C
16-Pin Plastic DIP
DG5043CJ
Top View
ABSOLUTE MAXIMUM RATINGS
V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Power Dissipation (Package)b
c
16-Pin Plastic DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND – 0.3 V) to 44 V
a
L
Digital Inputs V , V . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+ plus 2 V)
S
D
or 30 mA, whichever occurs first
Notes:
a. Signals on S , D , or IN exceeding V+ or V– will be clamped by internal
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/_C above 75_C
X
X
X
Current (Any Terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Current, S or D (Pulsed 1 ms 10% duty) . . . . . . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 125_C
Document Number: 70059
S-52880—Rev. B, 28-Apr-97
www.vishay.com S FaxBack 408-970-5600
4-1
DG5043
Vishay Siliconix
SPECIFICATIONS
Test Conditions
Unless Otherwise Specified
C Suffix
0 to 70_C
V+ = 15 V, V– = –15 V
e
Parameter
Symbol
Tempa
Minc
Typb
Maxc
Unit
V
L
= 5 V, V = 2 V, 0.8 V
IN
Analog Switch
d
Analog Signal Range
VANALOG
Full
–15
15
V
Room
Full
50
75
Drain-Source On-Resistance
Switch Off Leakage Current
r
I
S
= –10 mA, V = "10 V
W
DS(on)
D
Room
Full
–1
–100
1
100
V
S
= V = 14 V
D
I
S(off)
Room
Full
–1
–100
1
100
V
S
= V = –14 V
D
nA
Room
Full
2
200
V
S
= V = 14 V
D
Channel On Leakage Current
I
D(on)
Room
Full
–2
–200
V
S
= V = –14 V
D
Digital Control
Input Current with V Low
I
V Under Test = 0.8 V
IN
Full
Full
–1
–1
1
1
IN
IL
mA
Input Current with V High
IN
I
IH
V
IN
Under Test = 2 V
Dynamic Characteristics
Turn-On Time
Turn-Off Time
t
Room
Room
Room
Room
Room
Room
Room
Room
1200
700
ON
V
= "10 V, R = 1 kW, C = 35 pF
S
L
L
ns
pC
dB
See Figure 1
t
OFF
d
Charge Injection
Q
C
= 10 nF, V
= 0 V, R
= 0 W
30
75
89
15
17
45
L
gen
gen
d
Off Isolation
OIRR
R = 75 W, C = 5 pF, f = 1 MHz
L L
d
Crosstalk (Channel-to-Channel)
X
TALK
C
S(off)
C
D(off)
C
D(on)
R = 75 W, V = 2 V , f = 1 MHz
L S P-P
Source Off Capacitance
d
Drain Off Capacitance
V
= V = 0 V, f = 1 MHz
pF
D
S
d
Channel On Capacitance
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
I+
I–
Full
Full
Full
Full
300
300
V
V
= 0 or 2.4 V
= 0 or 2.4 V
IN
–300
–300
mA
I
L
IN
I
GND
Notes:
a. Room = 25_C, Full = as determined by the operating temperature suffix.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guaranteed by design, not subject to production test.
e.
V
IN
= input voltage to perform proper function.
Document Number: 70059
S-52880—Rev. B, 28-Apr-97
www.vishay.com S FaxBack 408-970-5600
4-2
DG5043
Vishay Siliconix
TEST CIRCUITS
+5 V
+15 V
V
V+
D
L
t <20 ns
r
t <20 ns
f
V
O1
V
V
S1
Logic “0” = SW On
S
S
IN
1
1
1
3 V
Logic
Input
V
O2
S2
50%
D
2
2
t
IN
GND
OFF
Switch
Output
R
L1
C
L1
V
S
V–
R
L2
C
L2
Switch
Output
90% V
O
0
–15 V
t
C
L
(includes fixture and stray capacitance)
ON
FIGURE 1. Switching Time
+5 V
+15 V
V
L
V+
D
R
g
DV
O
S
V
O
V
O
IN
GND
C
10 nF
V
g
L
IN
X
3 V
OFF
ON
OFF
V–
Q = C DV
L
O
–15 V
FIGURE 2. Charge Injection
Document Number: 70059
S-52880—Rev. B, 28-Apr-97
www.vishay.com S FaxBack 408-970-5600
4-3
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