DG444DJ [VISHAY]
Quad SPST CMOS Analog Switches; 四通道SPST CMOS模拟开关
| 型号： | DG444DJ |
| 厂家： | 
VISHAY |
| 描述： | Quad SPST CMOS Analog Switches |
| 文件： | 总9页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DG444/445
Vishay Siliconix
Quad SPST CMOS Analog Switches
FEATURES
BENEFITS
APPLICATIONS
D Low On-Resistance: 50 W
D Low Leakage: 80 pA
D Low Signal Errors and Distortion
D Audio Switching
D Reduced Power Supply
D Battery Powered Systems
D Data Acquisition
Requirements
D Low Power Consumption: 22 nW
D Fast Switching Action—tON: 120 ns
D Low Charge Injection
D Faster Throughput
D Improved Reliability
D Reduced Pedestal Errors
D Simple Interfacing
D Sample-and-Hold Circuits
D Telecommunication Systems
D Automatic Test Equipment
D Single Supply Circuits
D Hard Disk Drives
D DG211/DG212 Upgrades
D TTL/CMOS Logic Compatible
DESCRIPTION
The DG444/DG445 monolithic quad analog switches are
designed to provide high speed, low error switching of analog
signals. The DG444 has a normally closed function. The
DG445 has a normally open function. Combining low power
(22 nW, typ) with high speed (tON: 120 ns, typ), the
DG444/DG445 are ideally suited for upgrading DG211/212
sockets. Charge injection has been minimized on the drain for
use in sample-and-hold circuits.
To achieve high-voltage ratings and superior switching
performance, the DG444/DG445 are built on Vishay Siliconix’s
high-voltage silicon-gate process. An epitaxial layer prevents
latchup.
Each switch conducts equally well in both directions when on,
and blocks input voltages to the supply levels when off.
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Dual-In-Line and SOIC
TRUTH TABLE
IN
D
IN
D
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1
1
1
2
Logic
DG444
DG445
2
0
1
ON
OFF
ON
OFF
S
S
2
Logic “0” v 0.8 V
Logic “1” w 2.4 V
V–
V+
DG444
GND
V
L
ORDERING INFORMATION
S
4
S
3
Temp Range
Package
Part Number
DG444DJ
DG445DJ
DG444DY
DG445DY
D
4
D
3
16-Pin Plastic DIP
–40C to 85C
IN
4
IN
3
16-Pin Narrow SOIC
Top View
Document Number: 70054
S-52433—Rev. F, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-1
DG444/445
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
V+ to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V
GND to V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V
Power Dissipation (Package)b
c
16-Pin Plastic DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW
d
16-Pin Narrow Body SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND –0.3 V) to (V+) + 0.3 V
a
L
Digital Inputs V , V . . . . . . . . . . . . . . . . . . . . . . . . . . (V–) –2 V to (V+) +2 V
S
D
Notes:
or 30 mA, whichever occurs first
a. Signals on S , D , or IN exceeding V+ or V– will be clamped by internal
X
X
X
diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/_C above 75_C
Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA
Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . . . . . . . 100 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 125_C
d. Derate 8 mW/_C above 75_C
SPECIFICATIONS FOR DUAL SUPPLIES
D Suffix
Test Conditions
–40 to 85_C
Unless Otherwise Specified
V+ = 15 V, V– = –15 V
e
Parameter
Analog Switch
Symbol
Tempa Minb
Typc
Maxb
Unit
V
L
= 5 V, V = 2.4 V, 0.8 V
IN
d
Analog Signal Range
V
Full
–15
15
V
ANALOG
I
= –10 mA, V
V+ = 13.5 V, V– = –13.5 V
=
D
"8.5 V
Room
Full
50
85
100
S
Drain-Source On-Resistance
Switch Off Leakage Current
r
W
DS(on)
Room
Full
–0.5
–5
"0.01
"0.01
"0.08
0.5
5
I
S(off)
D(off)
D(on)
V+ = 16.5, V– = –16.5 V
= "15.5 V, V = #15.5 V
V
D
S
Room
Full
–0.5
–5
0.5
5
I
I
nA
V+ = 16.5 V, V– = –16.5 V
Room
Full
–0.5
–10
0.5
10
Channel On Leakage Current
V
S
= V = "15.5 V
D
Digital Control
V
V
under test = 0.8 V
All Other = 2.4 V
IN
Input Current V Low
I
Full
Full
–500
–500
–0.01
0.01
500
500
IN
IL
nA
ns
under test = 2.4 V
All Other = 0.8 V
IN
Input Current V High
IN
I
IH
Dynamic Characteristics
Turn-On Time
t
Room
Room
Room
120
110
160
250
140
210
ON
R
S
= 1 kW, C = 35 pF
L
= "10 V, See Figure 2
L
DG444
DG445
V
Turn-Off Time
t
OFF
Q
C
= 1 nF, V = 0 V
S
L
e
Charge Injection
Room
–1
pC
dB
V
gen
= 0 V, R
= 0 W
gen
e
Off Isolation
OIRR
Room
Room
Room
Room
Room
60
100
4
R
= 50 W, C = 5 pF, f = 1 MHz
L
L
d
Crosstalk (Channel-to-Channel)
X
C
C
C
TALK
S(off)
D(off)
D(on)
Source Off Capacitance
Drain Off Capacitance
Channel On Capacitance
f = 1 MHz
4
pF
V
= 0 V
16
ANALOG
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Ground Current
Room
Full
0.001
1
5
I+
I–
Room
Full
–1
–5
–0.0001
V+ = 16.5 V, V– = –16.5 V
= 0 or 5 V
mA
V
IN
Room
Full
1
5
I
L
0.001
Room
Full
–1
–5
I
–0.001
GND
Document Number: 70054
S-52433—Rev. F, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-2
DG444/445
Vishay Siliconix
SPECIFICATIONS FOR UNIPOLAR SUPPLIES
D Suffix
Test Conditions
–40 to 85_C
Unless Otherwise Specified
V+ = 12 V, V– = 0 V
e
Parameter
Analog Switch
Symbol
Tempa
Minb
Typc
Maxb
Unit
V
L
= 5 V, V = 2.4 V, 0.8 V
IN
d
Analog Signal Range
V
Full
0
12
V
ANALOG
I
S
= –10 mA, V = 3 V, 8 V
Room
Full
100
160
200
D
d
Drain-Source On-Resistance
r
W
DS(on)
V+ = 10.8 V, V = 5.25 V
L
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Charge Injection
t
Room
Room
Room
300
60
2
450
200
ON
R
= 1 kW, C = 35 pF, V = 8 V
L
L
S
ns
See Figure 2
t
OFF
Q
C
L
= 1 nF, V
= 6 V, R
= 0 W
pC
gen
gen
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Room
Full
0.001
–0.0001
0.001
1
5
I+
I–
V+ = 13.2 V, V = 0 or 5 V
IN
Room
Full
–1
–5
V
IN
= 0 or 5 V
mA
Room
Full
1
5
I
L
V = 5.25 V, V = 0 or 5 V
L IN
Room
Full
–1
–5
–0.001
Ground Current
Notes:
I
V
IN
= 0 or 5 V
GND
a. Room = 25_C, Full = as determined by the operating temperature suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. Guaranteed by design, not subject to production test.
e.
V
IN
= input voltage to perform proper function.
Document Number: 70054
S-52433—Rev. F, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-3
DG444/445
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
r
vs. V and Temnperature
Crosstak and Off Isolation vs. Frequency
DS(on)
D
80
70
60
–140
V+ = 15 V
V– = –15 V
–120
–100
–80
–60
–40
–20
0
Crosstalk
50
40
30
20
10
0
85_C
25_C
Off Isolation
–40_C
0_C
V+ = 15 V
V– = –15 V
Ref. 10 dBm
100
1 k
10 k
100 k
1 M
10 M
–15
–10
–5
0
5
10
15
V
D
– Drain Voltage (V)
f – Frequency (Hz)
Charge Injection vs. Source Voltage
Switching Threshold vs. Supply Voltage
50
40
30
C = 1 nF
L
4
3
20
10
V+ = 15 V
V– = –15 V
V
L
= 7 V
2
1
0
0
V+ = 12 V
V– = 0 V
–10
–20
–30
V
L
= 5 V
8
0
4
12
(V)
16
20
–10
–5
0
5
10
V
S
– Source Voltage (V)
V
SUPPLY
Source/Drain Leakage Currents
(Single 12-V Supply)
Source/Drain Leakage Currents
20
0
10
0
I
, I
S(off) D(off)
I
, I
S(off) D(off)
–20
–40
–60
–80
–100
–10
–20
–30
I
D(on)
I
+ I
S(on)
D(on)
V+ = 12 V
V– = 0 V
V+ = 15 V
V– = –15 V
For I , V = 0 V
D
S
For I , V = –V
(off)
D
S
For I , V = 0 V
S
D
–40
–15
–10
–5
0
5
10
15
0
2
4
6
8
10
V or V – Drain or Source Voltage (V)
D
12
V
D
or V – Drain or Source Voltage (V)
S
S
Document Number: 70054
S-52433—Rev. F, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-4
DG444/445
Vishay Siliconix
TYPICAL CHARACTERISTICS (_2C5 UNLESS NOTED)
Switching Time vs. Power Supply Voltage
Switching Times vs. Power Supply Voltage
160
140
120
500
V– = 0 V
V
L
= 5 V
400
DG444
DG445
t
ON
t
OFF
t
ON
300
200
100
80
t
ON
t
ON
60
40
20
t
OFF
100
0
t
OFF
DG444
DG445
t
OFF
"10
"12
"14
"V
"16
SUPPLY
"18
(V)
"20
"22
8
10
12
14
16
18
20
22
V+ – Positive Supply (V)
Supply Current vs. Temperature
Source/Drain Capacitance vs. Analog Voltage
100 mA
10 mA
1 mA
25
20
15
10
5
V+ = 15 V
V– = –15 V
C
S(on)
+ C
D(on)
I+, I
GND
100 nA
10 nA
1 nA
–(I–)
100 pA
10 pA
1 pA
I
L
C
S(off)
, C
D(off)
0
–55
–25
0
25
50
75
100
125
–15
–10
–5
0
5
10
15
Temperature (_C)
V
– Analog Voltage (V)
ANALOG
Switching Time vs. Input Voltage
160
V+ = 15 V
V– = –15 V
140
120
100
80
t
ON
t
ON
t
OFF
60
DG444
DG445
40
20
2
3
4
5
Input Voltage (V)
Document Number: 70054
S-52433—Rev. F, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-5
DG444/445
Vishay Siliconix
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S
V
L
V–
V+
Level
Shift/
Drive
V
IN
GND
V–
D
FIGURE 1.
TEST CIRCUITS
+5 V
+15 V
V+
3 V
0 V
Logic
Input
t <20 ns
t <20 ns
f
r
50%
50%
V
L
S
D
"10 V
V
O
t
OFF
Switch
Input
V
IN
S
R
1 kW
C
L
35 pF
L
V
t
O
3 V
80%
80%
V–
GND
Switch
Output
0 V
–15 V
ON
Note:
Logic input waveform is inverted for DG445.
C
L
(includes fixture and stray capacitance)
FIGURE 2. Switching Time
+5 V
+15 V
V+
DV
O
V
O
V
L
R
g
S
D
V
O
IN
X
OFF
OFF
ON
ON
OFF
OFF
IN
C
1 nF
V
g
L
(DG444)
3 V
V–
GND
–15 V
IN
X
Q = DV x C
O
L
(DG445)
FIGURE 3. Charge Injection
Document Number: 70054
S-52433—Rev. F, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-6
DG444/445
Vishay Siliconix
TEST CIRCUITS
C = 1 mF tantalum in parallel with 0.01 mF ceramic
C
+5 V
+15 V
V+
+5 V
+15 V
C
V
L
S
D
D
V
S
1
1
V
L
V+
R
g
= 50 W
V
O
S
D
V
S
50 W
IN
S
1
0V, 2.4 V
NC
R
g
= 50 W
R
L
V
O
IN
2
2
0V, 2.4 V
R
L
GND
V–
IN
2
C
0V, 2.4 V
GND
V–
C
–15 V
–15 V
V
V
S
Off Isolation = 20 log
V
V
O
S
X
Isolation = 20 log
TALK
O
C = RF bypass
FIGURE 4. Crosstalk
FIGURE 5. Off Isolation
+5 V
+15 V
V+
C
V
L
S
D
Meter
IN
HP4192A
Impedance
Analyzer
0 V, 2.4 V
or Equivalent
GND
V–
f = 1 MHz
C
–15 V
FIGURE 6. Source/Drain Capacitances
APPLICATIONS
+5 V
+15 V
V+
V
L
+15 V
+15 V
1
/ DG444
4
V
OUT
0 V
+5 V
10 kW
V
IN
0 V
GND
V–
FIGURE 7. Level Shifter
Document Number: 70054
S-52433—Rev. F, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-7
DG444/445
Vishay Siliconix
APPLICATIONS
V
IN
+
–
V
OUT
+ 5 V
+15 V
V+
Gain error is determined only by the resistor
tolerance. Op amp offset and CMRR will limit
accuracy of circuit.
V
L
GAIN
1
R
90 kW
1
A
= 1
V
With SW Closed:
4
R
2
5 kW
GAIN
2
A
= 10
V
V
R + R + R + R
1 2 3 4
OUT
=
= 100
V
R
4
IN
R
4 kW
3
GAIN
3
A
= 20
V
R
1 kW
4
GAIN
4
A
= 100
V
DG444 or DG445
V–
GND
–15 V
FIGURE 8. Precision-Weighted Resistor Programmable-Gain Amplifier
+5 V
+15 V
V
1
Logic Input
Low = Sample
High = Hold
DG444
+15 V
–15 V
+15 V
–
+
J202
C
50 pF
1
R
V
IN
5 MW
1
2N4400
200 kW
V
OUT
5.1 MW
J500
J507
V
2
C
2
1000 pF
GND
30 pF
–15 V
FIGURE 9. Precision Sample-and-Hold
Document Number: 70054
S-52433—Rev. F, 06-Sep-99
www.vishay.com S FaxBack 408-970-5600
4-8
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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