DG442 [VISHAY]
Quad SPST CMOS Analog Switches; 四通道SPST CMOS模拟开关
| 型号： | DG442 |
| 厂家： | 
VISHAY |
| 描述： | Quad SPST CMOS Analog Switches |
| 文件： | 总9页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DG441/442
Vishay Siliconix
Quad SPST CMOS Analog Switches
DESCRIPTION
FEATURES
•
•
•
•
•
•
•
•
Low On-Resistance: 50 Ω
Low Leakage: 80 pA
The DG441/442 monolithic quad analog switches are
designed to provide high speed, low error switching of
analog and audio signals. The DG441 has a normally closed
function. The DG442 has a normally open function.
Combining low on-resistance (50 Ω, typ.) with high speed
(tON 150 ns, typ.), the DG441/442 are ideally suited for
upgrading DG201A/202 sockets. Charge injection has been
minimized on the drain for use in sample-and-hold circuits.
Pb-free
Available
Low Power Consumption: 0.2 mW
Fast Switching Action-tON: 150 ns
Low Charge Injection-Q: - 1 pC
DG201A/DG202 Upgrades
TTL/CMOS-Compatible Logic
Single Supply Capability
RoHS*
COMPLIANT
BENEFITS
•
•
•
•
•
•
•
Less Signal Errors and Distortion
Reduced Power Supply Requirements
Faster Throughput
Improved Reliability
Reduced Pedestal Errors
Simplifies Retrofit
To achieve high voltage ratings and superior switching
performance, the DG441/442 are built on Vishay Siliconix’s
high-voltage silicon-gate process. An epitaxial layer
prevents latchup.
Simple Interfacing
Each switch conducts equally well in both directions when
on, and blocks input voltages to the supply levels when off.
APPLICATIONS
•
•
•
•
•
•
•
•
Audio Switching
Battery Powered Systems
Data Acquisition
Hi-Rel Systems
Sample-and-Hold Circuits
Communication Systems
Automatic Test Equipment
Medical Instruments
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
IN
IN
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1
1
1
2
D
IN
NC IN
D
2
1
1
2
Key
1
3
2
1
20
19
D
D
2
4
5
6
7
8
18
17
16
S
S
2
S
S
2
V-
NC
V+
LCC
V-
V+
Dual-In-Line and SOIC
DG441
NC
NC
DG441
Top View
GND
NC
15
14
GND
Top View
S
4
S
3
S
4
S
3
9
10
IN
11
12
13
D
4
D
3
D
4
NC IN
D
3
4
3
IN
4
IN
3
TRUTH TABLE
Logic
0
1
DG441
ON
OFF
DG442
OFF
ON
Logic "0" ≤ 0.8 V
Logic "1" ≥ 2.4 V
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 70053
S-71241–Rev. I, 25-Jun-07
www.vishay.com
1
DG441/442
Vishay Siliconix
ORDERING INFORMATION
Temp Range
Package
Part Number
DG441DJ
DG441DJ-E3
16-Pin Plastic DIP
DG442DJ
DG442DJ-E3
DG441DY
DG441DY-E3
DG441DY-T1
DG441DY-T1-E3
- 40 to 85 °C
16-Pin Narrow SOIC
DG442DY
DG442DY-E3
DG442DY-T1
DG442DY-T1-E3
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Unit
V+ to V-
44
25
GND to V-
V
(V-) - 2 to (V+) + 2
or 30 mA, whichever occurs first
Digital Inputsa, VS, VD
Continuous Current (Any Terminal)
30
100
mA
°C
Current, S or D (Pulsed at 1 ms, 10 % duty cycle)
(AK Suffix)
Storage Temperature
- 65 to 150
- 65 to 125
450
(DJ, DY Suffix)
16-Pin Plastic DIPc
16-Pin CerDIPd
16-Pin Narrow SOICd
900
Power Dissipation (Package)b
mW
900
LCC-20d
1200
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 6 mW/°C above 75 °C.
d. Derate 12 mW/°C above 75 °C.
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
5 V Reg
V-
Level
IN
X
Shift/
Drive
V+
GND
V-
Figure 1.
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2
Document Number: 70053
S-71241–Rev. I, 25-Jun-07
DG441/442
Vishay Siliconix
a
SPECIFICATIONS FOR DUAL SUPPLIES
Test Conditions
A Suffix
D Suffix
Unless Otherwise Specified
- 55 to 125 °C - 40 to 85 °C
V+ = 15 V, V- = - 15 V
Tempb
Typc
Mind Maxd Mind Maxd Unit
V
IN = 2.4 V, 0.8 Vf
Parameter
Symbol
Analog Switch
Analog Signal Rangee
VANALOG
rDS(on)
ΔrDS(on)
IS(off)
Full
- 15
15
- 15
15
V
IS = - 10 mA, VD
V+ = 13.5 V, V- = - 13.5 V
IS = - 10 mA, VD 10 V
=
8.5 V
Drain-Source
On-Resistance
Room
Full
50
85
100
85
100
Ω
On-Resistance Match Between
Channelse
=
Room
Full
4
5
4
5
V+ = 15 V, V– = - 15 V
Room
Full
0.01
0.01
0.08
- 0.5
- 20
0.5
20
- 0.5
- 5
0.5
5
V+ = 16.5, V- = - 16.5 V
Switch Off Leakage Current
VD
=
15.5 V, VS
=
15.5 V
Room
Full
- 0.5
- 20
0.5
20
- 0.5
- 5
0.5
5
ID(off)
nA
V+ = 16.5 V, V- = - 16.5 V
S = VD 15.5 V
Room
Full
- 0.5
- 40
0.5
40
- 0.5
- 10
0.5
10
ID(on)
Channel On Leakage Current
V
=
Digital Control
VIN under test = 0.8 V,
All Other = 2.4 V
VIN under test = 2.4 V
All Other = 0.8 V
Input Current VIN Low
IIL
Full
Full
- 0.01
0.01
- 500
- 500
500
500
- 500
- 500
500
500
nA
ns
Input Current VIN High
IIH
Dynamic Characteristics
tON
Turn-On Time
Room
Room
Room
150
90
250
120
210
250
120
210
RL = 1 kΩ, CL = 35 pF
DG441
DG442
VS
=
10 V
tOFF
Turn-Off Time
See Figure 2
110
CL = 1 nF, VS = 0 V
Vgen = 0 V, Rgen = 0 Ω
Charge Injectione
Off Isolatione
Q
Room
- 1
pC
dB
OIRR
XTALK
CS(off)
CD(off)
CD(on)
Room
Room
Room
Room
Room
60
100
4
RL = 50 Ω, CL = 5 pF
f = 1 MHz
Crosstalke (Channel-to-Channel)
Source Off Capacitancee
Drain Off Capacitancee
f = 1 MHz
4
pF
µA
Channel On Capacitancee
VANALOG = 0 V
16
Power Supplies
Positive Supply Current
I+
I-
Full
15
100
100
V+ = 16.5 V, V- = - 16.5 V
Room - 0.0001
Full
- 1
- 5
- 1
- 5
Negative Supply Current
Ground Current
V
IN = 0 or 5 V
IGND
Full
- 15
- 100
- 100
Document Number: 70053
S-71241–Rev. I, 25-Jun-07
www.vishay.com
3
DG441/442
Vishay Siliconix
a
SPECIFICATIONS FOR SINGLE SUPPLY
Test Conditions
A Suffix
D Suffix
Unless Otherwise Specified
- 55 to 125 °C - 40 to 85 °C
V+ = 12 V, V- = 0 V
Tempb
Typc
Mind Maxd Mind Maxd Unit
V
IN = 2.4 V, 0.8 Vf
Parameter
Symbol
Analog Switch
Analog Signal Rangee
VANALOG
rDS(on)
Full
0
12
0
12
V
IS = - 10 mA, VD = 3 V, 8 V
V+ = 10.8 V
Drain-Source
On-Resistance
Room
Full
100
160
200
160
200
Ω
Dynamic Characteristics
tON
tOFF
Q
RL = 1 kΩ, CL = 35 pF
Turn-On Time
Room
Room
Room
300
60
2
450
200
450
200
ns
V
S = 8 V
Turn-Off Time
See Figure 2
CL = 1nF, Vgen = 6 V, Rgen = 0 Ω
Charge Injection
pC
Power Supplies
Positive Supply Current
I+
I-
Full
15
100
100
V+ = 13.2 V, V- = 0 V
VIN = 0 or 5 V
Room - 0.0001
Full
- 1
- 100
- 1
- 100
Negative Supply Current
Ground Current
µA
IGND
Full
- 15
- 100
- 100
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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4
Document Number: 70053
S-71241–Rev. I, 25-Jun-07
DG441/442
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
80
70
60
V+ = 15 V
V- = - 15 V
5 V
80
125 °C
60
40
20
8 V
10 V
12 V
15 V
50
40
30
20
10
0
85 °C
25 °C
20 V
- 55 °C
0 °C
- 40 °C
0
- 20 - 15 - 10
- 5
0
5
10
15
20
- 15
- 10
- 5
0
5
10
15
V
D
– Drain Voltage (V)
V
D
– Drain Voltage (V)
rDS(on) vs. VD and Power Supply Voltage
rDS(on) vs. VD and Temperature
300
250
200
150
100
50
140
V- = 0 V
120
100
80
60
40
20
0
125 °C
85 °C
V+ = 5 V
25 °C
8 V
10 V
12 V
15 V
- 55 °C
0 °C
- 40 °C
V+ = 12 V
V- = 0 V
20 V
0
0
4
8
12
16
20
0
2
4
6
8
10
12
V
− Drain Voltage (V)
D
V
– Drain Voltage (V)
D
rDS(on) vs. VD and Unipolar
Power Supply Voltage
r
DS(on) vs. VD and Temperature
(Single 12-V Supply)
50
40
30
140
C
L
= 1 nF
120
100
80
60
40
20
0
Crosstalk
V+ = 15 V
V- = - 15 V
20
10
0
Off Isolation
V+ = 12 V
V- = 0 V
- 10
- 20
- 30
V+ = 15 V
V- = - 15 V
Ref. 10 dBm
100
1 k
10 k
f – Frequency (Hz)
Crosstalk and Off Isolation vs. Frequency
100 k
1 M
10 M
- 10
- 5
0
5
10
V
S
– Source Voltage (V)
Charge Injection vs. Source Voltage
Document Number: 70053
S-71241–Rev. I, 25-Jun-07
www.vishay.com
5
DG441/442
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
2.4
20
0
I
, I
S(off) D(off)
1.6
0.8
0
- 20
- 40
- 60
- 80
- 100
I
D(on)
V+ = 15 V
V- = - 15 V
For I , V = - V
(off)
D
S
5
10
V+, V– Positive and Negative Supplies (V)
Switching Threshold vs. Supply Voltage
15
20
0
- 15
- 10
V
- 5
0
5
10
15
or V – Drain or Source Voltage (V)
D
S
Source/Drain Leakage Currents
10
0
50
V+
I
, I
44
40
S(off) D(off)
S
D
5 V – CMOS
Compatible
IN
- 10
- 20
- 30
30
20
10
I
+ I
D(on)
S(on)
V-
TTL Compatible
= 0.8 V, 2.4 V
V
V+ = 12 V
V- = 0 V
IN
For I , V = 0
D
S
For I , V = 0
CMOS
S
D
Compatible
3
0
- 40
0
2
4
6
8
10
12
0
- 10
- 20
- 30
- 40
- 50
V
D
or V – Drain or Source Voltage (V)
S
V- – Negative Supply (V)
Source/Drain Leakage Currents (Single 12 V Supply)
Operating Voltage
160
140
500
400
V- = 0 V
t
ON
120
t
ON
300
200
100
80
t
OFF
60
40
20
100
0
t
OFF
10
12
14
Supply Voltage (V)
Switching Time vs. Power Supply Voltage
16
18
20
22
8
10
12
14
16
18
20
22
V
− Source Voltage (V)
S
Switching Time vs. Power Supply Voltage
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6
Document Number: 70053
S-71241–Rev. I, 25-Jun-07
DG441/442
Vishay Siliconix
TEST CIRCUITS
+ 15 V
3 V
0 V
Logic
Input
t < 20 ns
f
r
50 % 50 %
t < 20 ns
V+
S
D
10 V
V
O
t
OFF
Switch
Input
V
S
IN
R
1 kΩ
C
L
35 pF
L
V
O
80 %
80 %
3 V
GND
V-
Switch
Output
0 V
t
ON
- 15 V
C
L
(includes fixture and stray capacitance)
Note:
Logic input waveform is inverted for DG442.
Figure 2. Switching Time
+ 15 V
ΔV
O
V
O
V+
R
g
S
D
IN
X
V
O
OFF
ON
ON
OFF
OFF
(DG441)
IN
C
1 nF
L
3 V
V-
GND
OFF
IN
X
Q = ΔV x C
O
L
(DG442)
- 15 V
Figure 3. Charge Injection
C = 1 mF tantalum in parallel with 0.01 mF ceramic
+ 15 V
C
+ 15 V
V+
C
V+
S
D
1
D
2
V
S
1
R
g
= 50 Ω
V
O
50 Ω
S
D
IN
S
V
S
1
0 V, 2.4 V
R
g
= 50 Ω
V
O
L
R
2
L
IN
NC
0 V, 2.4 V
R
IN
2
GND
V-
0 V, 2.4 V
C
GND
V-
C
- 15 V
- 15 V
V
V
S
Off Isolation = 20 log
V
V
S
O
X
Isolation = 20 log
TA L K
O
C = RF bypass
Figure 5. Off Isolation
Figure 4. Crosstalk
+ 15 V
V+
C
S
D
Meter
IN
HP4192A
0 V, 2.4 V
Impedance
Analyzer
or Equivalent
GND
V-
C
- 15 V
Figure 6. Source/Drain Capacitances
Document Number: 70053
S-71241–Rev. I, 25-Jun-07
www.vishay.com
7
DG441/442
Vishay Siliconix
APPLICATIONS
+ 24 V
+ 15 V
R
L
V+
I = 3 A
DG442
150 Ω
10 kΩ
+ 15 V
IN
VN0300 L, M
+ 15 V
V
IN
1/4 DG442
S
D
+
-
V
OUT
+ 15 V
+
-
C
H
GND
V-
IN
- 15 V
0 = Load Off
1 = Load On
H = Sample
L = Hold
Figure 8. Open Loop Sample-and-Hold
Figure 7. Power MOSFET Driver
V
IN
+
-
V
OUT
+ 15 V
Gain error is determined only by the resistor
tolerance. Op amp offset and CMRR will limit ac-
curacy of circuit.
V+
GAIN
1
R
90 kΩ
1
A
= 1
V
With SW Closed
4
R
2
5 kΩ
GAIN
2
A
= 10
V
V
R + R + R + R
1 2 3 4
OUT
=
= 100
V
R
4
IN
R
4 kΩ
3
GAIN
3
A
= 20
V
R
1 kΩ
4
GAIN
4
A
= 100
V
DG441 or DG442
V-
GND
- 15 V
Figure 9. Precision-Weighted Resistor Programmable-Gain Amplifier
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?70053.
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8
Document Number: 70053
S-71241–Rev. I, 25-Jun-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
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