DG441LAZ-883 [VISHAY]

Precision Monolithic Quad SPST Low-Voltage CMOS Analog Switches; 精密单片四路SPST低电压CMOS模拟开关
DG441LAZ-883
型号: DG441LAZ-883
厂家: VISHAY    VISHAY
描述:

Precision Monolithic Quad SPST Low-Voltage CMOS Analog Switches
精密单片四路SPST低电压CMOS模拟开关

开关
文件: 总14页 (文件大小:201K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DG441L, DG442L  
Vishay Siliconix  
Precision Monolithic Quad SPST  
Low-Voltage CMOS Analog Switches  
DESCRIPTION  
FEATURES  
The DG441L, DG442L are low voltage pin-for-pin  
compatible companion devices to the industry standard  
DG441L, DG442L with improved performance.  
Halogen-free according to IEC 61249-2-21  
Definition  
2.7 V thru 12 V single supply or  
3 V thru 6 V dual supply  
Using BiCMOS wafer fabrication technology allows the  
DG441L, DG442L to operate on single and dual supplies.  
Single supply voltage ranges from 3 V to 12 V while dual  
supply operation is recommended with 3 V to 6 V.  
• On-resistance - R  
: 17   
DS(on)  
Fast switching - tON: 20 ns  
- tOFF: 12 ns  
TTL, CMOS compatible  
Low leakage: 0.25 nA  
2000 V ESD protection  
Combining high speed (tON: 20 ns), flat RDS(on) over the  
analog signal range (5 ), minimal insertion lose (- 3 dB at  
280 MHz), and excellent crosstalk and off-isolation  
performance (- 50 dB at 50 MHz), the DG441L, DG442L are  
ideally suited for audio and video signal switching.  
Compliant to RoHS Directive 2002/95/EC  
BENEFITS  
Widest dynamic range  
The DG441L, DG442L responds to opposite control logic as  
shown in the Truth Table open and two normally closed  
switches.  
Low signal errors and distortion  
Break-before-make switching action  
Simple interfacing  
APPLICATIONS  
Precision automatic test equipment  
Precision data acquisition  
Communication systems  
Battery powered systems  
Computer peripherals  
SDSL, DSLAM  
Audio and video signal routing  
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION  
Dual-In-Line, TSSOP and SOIC  
TRUTH TABLE  
Logic  
DG441L  
On  
DG442L  
Off  
IN  
D
IN  
D
1
2
3
4
5
6
7
8
16  
15  
14  
13  
12  
11  
10  
9
1
1
1
2
0
1
Off  
On  
2
Logic "0" 0.8 V  
Logic "1" 2.4 V  
S
S
2
ORDERING INFORMATION  
Temp. Range  
V-  
V+  
Package  
Part Number  
DG441LDQ-T1-E3  
DG442LDQ-T1-E3  
DG441LDY-T1-E3  
DG441L/442L  
GND  
NC  
16-pin TSSOP  
Top View  
- 40 °C to 85 °C  
16-pin narrow  
SOIC  
S
4
S
3
DG442LDY-T1-E3  
DG441LAK, DG441LAK/883  
DG442LAK, DG442LAK/883  
DG441LAZ/883  
D
4
D
3
16-pin CerDIP  
LCC-20  
- 55 °C to 125 °C  
IN  
4
IN  
3
DG442LAZ/883  
Document Number: 71399  
S11-1066–Rev. E, 30-May-11  
www.vishay.com  
1
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
DG441L, DG442L  
Vishay Siliconix  
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)  
A
Parameter  
Symbol  
Limit  
- 0.3 to 13  
7
Unit  
V + to V -  
GND to V - A  
V
GND - 0.3 to (V +) + 0.3  
or 30 mA, whichever occurs first  
Digital Inputsa VS, VD  
Continuous Current (any terminal)  
30  
100  
mA  
°C  
Current, S or D (pulsed 1 ms, 10 % duty cycle)  
(DQ, DY suffix)  
- 65 to 125  
- 65 to 150  
450  
Storage Temperature  
(AK suffix)  
16-pin TSSOPc  
16-pin narrow Body SOICd  
16-pin CerDIPe  
Power Dissipation (Packages)b  
650  
900  
mW  
Notes:  
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.  
b. All leads welded or soldered to PC board.  
c. Derate 7 mW/°C above 75 °C  
d. Derate 7.6 mW/°C above 75 °C  
e. Derate 12 mW/°C above 75 °C.  
a
SPECIFICATIONS (Single Supply 12 V)  
Test Conditions  
Unless Otherwise Specified  
V + = 12 V, V - = 0 V  
A Suffix Limits D Suffix Limits  
- 55 °C to 125 °C - 40 °C to 85 °C  
Unit  
Temp.b Typ.c Min.d Max.d Min.d Max.d  
VIN = 2.4 V, 0.8 Vf  
Parameter  
Symbol  
Analog Switch  
Analog Signal Rangee  
VANALOG  
RDS(on)  
RDS(on)  
IS(off)  
Full  
0
12  
0
12  
V
V + = 10.8 V, V - = 0 V  
Drain-Source  
On-Resistance  
Room  
Full  
20  
30  
45  
30  
40  
I
S = 10 mA, VD = 2/9 V  
On-Resistance Match  
Between Channelse  
IS = 10 mA, VD = 9 V  
Room  
0.1  
0.5  
0.5  
Room  
Full  
- 1  
- 15  
1
15  
- 1  
- 10  
1
10  
VD = 1/11 V, VS = 11/1 V  
VS = VD = 11/1 V  
Switch Off Leakage Current  
Channel On Leakage Current  
Room  
Full  
- 1  
- 15  
1
15  
- 1  
- 10  
1
10  
ID(off)  
nA  
Room  
Full  
- 1  
- 15  
1
15  
- 1  
- 10  
1
10  
ID(on)  
Digital Control  
Input Current, VIN Low  
IIL  
VIN Under Test = 0.8 V  
VIN Under Test = 2.4 V  
Full  
Full  
0.01  
- 1.5  
- 1.5  
1.5  
1.5  
- 1  
- 1  
1
1
µA  
ns  
Input Current, VIN High  
IIH  
Dynamic Characteristics  
Room  
Full  
20  
12  
60  
80  
60  
70  
tON  
Turn-On Time  
Turn-Off Time  
RL = 300 , CL = 35 pF  
VS = 5 V, see figure 2  
Room  
Full  
35  
50  
35  
45  
tOFF  
Charge Injectione  
Off Isolatione  
Vg = 0 V, Rg = 0 , CL = 10 nF  
RL = 50 , CL = 5 pF , f = 1 MHz  
Q
Room  
Room  
Room  
Room  
Room  
Room  
5
71  
95  
5
pC  
dB  
OIRR  
XTALK  
CS(off)  
CD(off)  
CD(on)  
Channel-to-Channel Crosstalke  
Source Off Capacitancee  
Drain Off Capacitancee  
Channel On Capacitancee  
Power Supplies  
f = 1 MHz  
6
pF  
µA  
15  
Positive Supply Current  
I+  
I-  
Full  
0.03  
1.5  
1
-
Room  
Full  
- 1  
- 1  
- 5  
Negative Supply Current  
Ground Current  
0.002  
VIN = 0 V or 12 V  
- 7.5  
-
IGND  
Full  
- 1.5  
- 1  
0.002  
www.vishay.com  
2
Document Number: 71399  
S11-1066–Rev. E, 30-May-11  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
DG441L, DG442L  
Vishay Siliconix  
a
SPECIFICATIONS (Dual Supply 5 V)  
Test Conditions  
A Suffix Limits D Suffix Limits  
Unless Otherwise Specified  
- 55 °C to 125 °C - 40 °C to 85 °C  
Unit  
V + = 5 V, V - = - 5 V  
Temp.b Typ.c  
Min.d Max.d Min.d Max.d  
Parameter  
Symbol  
V
IN = 2.4 V, 0.8 Vf  
Analog Switch  
Analog Signal Rangee  
VANALOG  
RDS(on)  
RDS(on)  
IS(off)  
Full  
- 5  
5
- 5  
5
V
V + = 5 V, V - = - 5 V  
Drain-Source  
On-Resistance  
Room  
Full  
20  
33  
45  
33  
40  
I
S = 10 mA, VD  
=
3.5 V  
On-Resistance Match  
Between Channelse  
IS = 10 mA, VD  
=
3.5 V  
Room  
0.1  
0.5  
0.5  
Room  
Full  
- 1  
- 15  
1
15  
- 1  
- 10  
1
10  
V + = 5.5 , V - = - 5.5 V  
VD 4.5 V, VS 4.5 V  
Switch Off  
Leakage Currentg  
=
=
Room  
Full  
- 1  
- 15  
1
15  
- 1  
- 10  
1
10  
ID(off)  
nA  
Channel On  
Leakage Currentg  
V + = 5.5 V, V - = - 5.5 V  
S = VD 4.5 V  
Room  
Full  
- 1  
- 15  
1
15  
- 1  
- 10  
1
10  
ID(on)  
V
=
Digital Control  
Input Current, VIN Lowe  
IIL  
VIN Under Test = 0.8 V  
VIN Under Test = 2.4 V  
Full  
Full  
0.05  
0.05  
- 1.5  
- 1.5  
1.5  
1.5  
- 1  
- 1  
1
1
µA  
ns  
Input Current, VIN Highe  
IIH  
Dynamic Characteristics  
Room  
Full  
21  
16  
60  
83  
60  
70  
tON  
Turn-On Time  
RL = 300 , CL = 35 pF  
VS  
=
3.5 V, see figure 2  
Room  
Full  
35  
55  
35  
45  
tOFF  
Turn-Off Time  
Charge Injectione  
Off Isolatione  
Vg = 0 V, Rg = 0 , CL = 10 nF  
RL = 50 , CL = 5 pF , f = 1 MHz  
Q
Room  
Room  
5
pC  
dB  
OIRR  
68  
Channel-to-Channel  
Crosstalke  
XTALK  
Room  
85  
Source Off Capacitancee  
Drain Off Capacitancee  
Channel On Capacitancee  
CS(off)  
CD(off)  
CD(on)  
Room  
Room  
Room  
9
9
f = 1 MHz  
pF  
µA  
20  
Power Supplies  
Positive Supply Currente  
Negative Supply Currente  
Ground Currente  
I+  
-
Full  
0.002  
1.5  
1
Room - 0.002  
Full  
- 1  
- 7.5  
- 1  
- 5  
VIN = 0 V or 5 V  
IGND  
Full  
- 0.002 - 1.5  
- 1  
Document Number: 71399  
S11-1066–Rev. E, 30-May-11  
www.vishay.com  
3
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
DG441L, DG442L  
Vishay Siliconix  
a
SPECIFICATIONS (Single Supply 5 V)  
Test Conditions  
A Suffix Limits D Suffix Limits  
Unless Otherwise Specified  
- 55 °C to 125 °C - 40 °C to 85 °C  
Unit  
V + = 5 V, V - = 0 V  
Temp.b Typ.c  
Min.d Max.d Min.d Max.d  
Parameter  
Symbol  
V
IN = 2.4 V, 0.8 Vf  
Analog Switch  
Analog Signal Rangee  
VANALOG  
RDS(on)  
Full  
5
5
V
Drain-Source  
On-Resistancee  
V + = 4.5 V  
Room  
Full  
35  
50  
88  
50  
75  
I
S = 5 mA, VD = 1 V, 3.5 V  
IS = 10 mA, VD = 3.5 V  
On-Resistance Match  
Between Channelse  
RDS(on)  
Room  
0.5  
1
1
Dynamic Characteristics  
Room  
Hot  
27  
15  
50  
90  
50  
60  
Turn-On Timee  
tON  
RL = 300 , CL = 35 pF  
ns  
VS = 3.5 V, see figure 2  
Room  
Hot  
30  
55  
30  
40  
Turn-Off Timee  
tOFF  
Q
Charge Injectione  
Vg = 0 V, Rg = 0 , CL = 10 nF  
Room  
0.5  
pC  
Power Supplies  
Positive Supply Currente  
Negative Supply Currente  
Ground Currente  
I +  
I -  
Full  
10  
200  
100  
Room - 0.002  
Full  
- 1  
- 7.5  
- 1  
- 5  
VIN = 0 V or 5 V  
µA  
IGND  
Full  
- 10  
- 200  
- 100  
www.vishay.com  
4
Document Number: 71399  
S11-1066–Rev. E, 30-May-11  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
DG441L, DG442L  
Vishay Siliconix  
a
SPECIFICATIONS (Single Supply 3 V)  
Test Conditions  
A Suffix Limits D Suffix Limits  
Unless Otherwise Specified  
- 55 °C to 125 °C - 40 °C to 85 °C  
Unit  
V + = 3 V, V - = 0 V  
Temp.b Typ.c  
Min.d Max.d Min.d Max.d  
Parameter  
Symbol  
V
IN = 0.4 Vf  
Analog Switch  
Analog Signal Rangee  
VANALOG  
RDS(on)  
RDS(on)  
IS(off)  
Full  
0
3
0
3
V
V + = 2.7 V, V - = 0 V  
S = 5 mA, VD = 0.5, 2.2 V  
Drain-Source  
On-Resistance  
Room  
Full  
65  
1
80  
115  
80  
100  
I
On-Resistance Match  
Between Channelse  
IS = 5 mA, VD = 2.2 V  
Room  
3
3
Room  
Full  
- 1  
- 15  
1
15  
- 1  
- 10  
1
10  
Switch Off  
Leakage Currentg  
V + = 3.3 , V - = 0 V  
V
D = 1, 2 V, VS = 2, 1 V  
Room  
Full  
- 1  
- 15  
1
15  
- 1  
- 10  
1
10  
ID(off)  
nA  
Channel On  
Leakage Currentg  
V + = 3.3 V, V - = 0 V  
S = VD = 1, 2 V  
Room  
Full  
- 1  
- 15  
1
15  
- 1  
- 10  
1
10  
ID(on)  
V
Digital Control  
Input Current, VIN Lowe  
IIL  
VIN under test = 0.4 V  
VIN under test = 2.4 V  
Full  
Full  
0.005  
0.005  
- 1.5  
- 1.5  
1.5  
1.5  
- 1  
- 1  
1
1
µA  
ns  
Input Current, VIN Highe  
IIH  
Dynamic Characteristics  
Room  
Full  
50  
30  
136  
175  
136  
151  
tON  
Turn-On Time  
RL = 300 , CL = 35 pF  
VS = 1.5 V, see figure 2  
Room  
Full  
100  
140  
100  
125  
tOFF  
Turn-Off Time  
Charge Injectione  
Off Isolatione  
Vg = 0 V, Rg = 0 , CL = 10 nF  
RL = 50 , CL = 5 pF , f = 1 MHz  
Q
Room  
Room  
1
pC  
dB  
OIRR  
68  
Channel-to-Channel  
Crosstalke  
XTALK  
Room  
85  
Source Off Capacitancee  
Drain Off Capacitancee  
Channel On Capacitancee  
CS(off)  
CD(off)  
CD(on)  
Room  
Room  
Room  
6
6
f = 1 MHz  
pF  
20  
Notes:  
a. Refer to PROCESS OPTION FLOWCHART.  
b. Room = 25 °C, Full = as determined by the operating temperature suffix.  
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.  
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.  
e. Guaranteed by design, not subject to production test.  
f. VIN = input voltage to perform proper function.  
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
Document Number: 71399  
S11-1066–Rev. E, 30-May-11  
www.vishay.com  
5
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
DG441L, DG442L  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
50  
40  
30  
20  
10  
0
100  
80  
60  
40  
20  
0
V+ = 5 V  
V- = 0 V  
A
B
C
V
= 2.7 V  
CC  
D
E
V
= 4.5 V  
CC  
A =125 °C  
B = 85 °C  
C = 25 °C  
D = - 40 °C  
E = - 55 °C  
V
= 12 V  
CC  
0
3
6
9
12  
0
1
2
3
4
5
Drain Voltage (V)  
Drain Voltage (V)  
RDS(on) vs. Drain Voltage  
(Single Supply)  
RDS(on) vs. Drain Voltage and Temperature  
(Single Supply)  
30  
20  
35  
28  
21  
14  
7
V+ = 5 V  
V- = - 5 V  
V
=
5 V  
A
10  
B
C
I
D(on)  
0
I
D(off)  
D
E
I
S(off)  
- 10  
- 20  
- 30  
A = 125 °C  
B = 85 °C  
C = 25 °C  
D = - 40 °C  
E = - 55 °C  
0
- 5  
- 3  
- 1  
1
3
5
- 5  
- 3  
- 1  
1
3
5
V
or V – Drain-Source Voltage  
S
Drain Voltage (V)  
D
RDS(on) vs. Drain Voltage and Temperature  
(Dual Supply)  
Leakage Current vs. Analog Voltage  
(Dual Supply)  
45  
36  
27  
18  
9
50  
40  
30  
20  
10  
0
t
ON  
t
ON  
t
OFF  
t
OFF  
0
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
5.5  
6.0  
6.5  
0
3
6
9
12  
15  
V
Positive Supply Voltage (V)  
V
ꢀPosisꢁv ꢂSuupl ꢁPpitav ꢃVꢄ  
Switching Time vs. Single Supply  
Switching Time vs. Dual Supply  
www.vishay.com  
6
Document Number: 71399  
S11-1066–Rev. E, 30-May-11  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
DG441L, DG442L  
Vishay Siliconix  
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)  
6
4
V
=
5 V  
SUPPLY  
2
0
V
= 3 V  
SUPPLY  
- 2  
- 5  
- 3  
- 1  
1
3
5
Drain Voltage (V)  
Charge Injection vs. Drain Voltage  
1.8  
1.5  
1.2  
0.9  
0.6  
0.3  
0.0  
7
6
5
C
at V = 5 V  
CC  
D(off)  
C
D(off)  
at V = 12 V  
CC  
C
at V = 3 V  
CC  
D(off)  
4
3
2
1
0
0
3
6
9
12  
0
2
4
6
8
10  
12  
14  
V
Drain Voltage (V)  
V
Positive Supply Voltage (V)  
D
Input Threshold vs. Single Supply Voltage  
Drain Capacitance vs. Drain Voltage  
(Single Supply)  
25  
20  
15  
10  
5
10  
V
=
5 V  
SUPPLY  
C
D(on)  
- 10  
V+ = 3 V  
V- = 0 V  
Insertion Loss  
- 3 dB = 280 MHz  
R
L
= 50  
- 30  
- 50  
- 70  
Off Isolation  
Crosstalk  
C /C  
S
D(off)  
- 90  
0
- 110  
- 5  
- 3  
- 1  
1
3
5
0.1  
1
10  
Frequency (MHz)  
100  
1000  
Analog Voltage (V)  
Capacitance vs. Analog Signal  
(Dual Supply)  
Insertion Loss, Off Isolation and Crosstalk  
vs. Frequency (Single Supply)  
Document Number: 71399  
S11-1066–Rev. E, 30-May-11  
www.vishay.com  
7
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
DG441L, DG442L  
Vishay Siliconix  
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)  
V+  
5 V Reg  
S
V-  
Level  
IN  
X
Shift/  
Drive  
V+  
GND  
D
V-  
Figure 1.  
TEST CIRCUITS  
V+  
3 V  
0 V  
Logic  
Input  
t < 20 ns  
r
t < 20 ns  
f
50 % 50 %  
V+  
S
D
V
V
S
O
t
OFF  
Switch  
Input  
V
S
IN  
R
1 k  
C
L
35 pF  
L
V
O
80 %  
80 %  
3 V  
GND  
V-  
Switch  
Output  
0 V  
t
ON  
V-  
C
L
(includes fixture and stray capacitance)  
Note:  
Figure 2. Switching Time  
Logic input waveform is inverted for DG442.  
V+  
V+  
V  
O
V
O
R
g
S
D
IN  
X
V
O
OFF  
ON  
ON  
OFF  
OFF  
(DG441)  
IN  
C
1 nF  
L
3 V  
V-  
V-  
GND  
OFF  
IN  
X
Q = V x C  
O
L
(DG442)  
Figure 3. Charge Injection  
www.vishay.com  
8
Document Number: 71399  
S11-1066–Rev. E, 30-May-11  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
DG441L, DG442L  
Vishay Siliconix  
TEST CIRCUITS  
C = 1 µF tantalum in parallel with 0.01 µF ceramic  
V+  
V+  
C
S
D
D
V
1
1
S
R
g
= 50   
50   
IN  
1
0 V, 2.4 V  
V
O
L
S
2
2
NC  
0 V, 2.4 V  
R
IN  
2
GND  
V-  
V-  
C
V
S
X
Isolation = 20 log  
TA L K  
V
O
C = RF bypass  
Figure 4. Crosstalk  
V+  
C
V+  
V
O
S
D
V
S
R
= 50   
g
R
L
IN  
0 V, 2.4 V  
GND  
V-  
C
V-  
V
V
S
Off Isolation = 20 log  
O
Figure 5. Off Isolation  
V+  
C
S
D
V+  
Meter  
IN  
HP4192A  
Impedance  
Analyzer  
0 V, 2.4 V  
or Equivalent  
GND  
V-  
C
V-  
Figure 6. Source/Drain Capacitances  
Document Number: 71399  
S11-1066–Rev. E, 30-May-11  
www.vishay.com  
9
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
DG441L, DG442L  
Vishay Siliconix  
APPLICATIONS  
+ 24 V  
+ 12 V  
R
L
V+  
I = 3A  
DG442L  
150   
10 k  
+ 12 V  
IN  
VN0300L, M  
+ 12 V  
V
IN  
1/4 DG442L  
S
D
+
-
V
OUT  
+ 12 V  
+
-
C
H
GND  
V-  
IN  
0 V  
H = Sample  
L = Hold  
0 = Load Off  
1 = Load On  
Figure 8. Open Loop Sample-and-Hold  
Figure 7. Power MOSFET Driver  
V
IN  
+
-
V
OUT  
+ 12 V  
V+  
Gain error is determined only by the resistor  
tolerance. Op amp offset and CMRR will limit ac-  
curacy of circuit.  
GAIN  
1
R
90 k  
1
A
= 1  
V
With SW Closed  
4
R
2
5 k  
GAIN  
2
A
= 10  
V
V
R + R + R + R  
1 2 3 4  
OUT  
=
= 100  
V
R
4
IN  
R
4 k  
3
GAIN  
3
A
= 20  
V
R
1 k  
4
GAIN  
4
A
= 100  
V
DG441L or DG442L  
V-  
GND  
V
Figure 9. Precision-Weighted Resistor Programmable-Gain Amplifier  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-  
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability  
data, see www.vishay.com/ppg?71399.  
www.vishay.com  
10  
Document Number: 71399  
S11-1066–Rev. E, 30-May-11  
This document is subject to change without notice.  
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Package Information  
Vishay Siliconix  
SOIC (NARROW): 16ĆLEAD  
JEDEC Part Number: MS-012  
MILLIMETERS  
INCHES  
Dim  
A
A1  
B
C
D
Min  
1.35  
0.10  
0.38  
0.18  
9.80  
3.80  
Max  
1.75  
0.20  
0.51  
0.23  
10.00  
4.00  
Min  
Max  
0.069  
0.008  
0.020  
0.009  
0.393  
0.157  
0.053  
0.004  
0.015  
0.007  
0.385  
0.149  
E
16 15  
14 13  
12 11  
10  
7
9
8
1.27 BSC  
0.050 BSC  
e
H
L
Ĭ
5.80  
0.50  
0_  
6.20  
0.93  
8_  
0.228  
0.020  
0_  
0.244  
0.037  
8_  
E
1
2
3
4
5
6
ECN: S-03946—Rev. F, 09-Jul-01  
DWG: 5300  
H
D
C
All Leads  
0.101 mm  
0.004 IN  
A1  
Ĭ
L
e
B
Document Number: 71194  
02-Jul-01  
www.vishay.com  
1
Package Information  
Vishay Siliconix  
TSSOP: 16-LEAD  
DIMENSIONS IN MILLIMETERS  
Symbols  
Min  
-
Nom  
1.10  
0.10  
1.00  
0.28  
0.127  
5.00  
6.40  
4.40  
0.65  
0.60  
1.00  
-
Max  
1.20  
0.15  
1.05  
0.38  
-
A
A1  
A2  
B
0.05  
-
0.22  
-
C
D
4.90  
6.10  
4.30  
-
5.10  
6.70  
4.50  
-
E
E1  
e
L
0.50  
0.90  
-
0.70  
1.10  
0.10  
6°  
L1  
y
θ1  
0°  
3°  
ECN: S-61920-Rev. D, 23-Oct-06  
DWG: 5624  
Document Number: 74417  
23-Oct-06  
www.vishay.com  
1
Application Note 826  
Vishay Siliconix  
RECOMMENDED MINIMUM PADS FOR SO-16  
0.372  
(9.449)  
0.047  
(1.194)  
0.022  
0.050  
0.028  
(0.559)  
(1.270)  
(0.711)  
Recommended Minimum Pads  
Dimensions in Inches/(mm)  
Return to Index  
www.vishay.com  
24  
Document Number: 72608  
Revision: 21-Jan-08  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree  
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and  
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay  
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to  
obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 11-Mar-11  
www.vishay.com  
1

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