DG441LAZ-883 [VISHAY]
Precision Monolithic Quad SPST Low-Voltage CMOS Analog Switches; 精密单片四路SPST低电压CMOS模拟开关型号: | DG441LAZ-883 |
厂家: | VISHAY |
描述: | Precision Monolithic Quad SPST Low-Voltage CMOS Analog Switches |
文件: | 总14页 (文件大小:201K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DG441L, DG442L
Vishay Siliconix
Precision Monolithic Quad SPST
Low-Voltage CMOS Analog Switches
DESCRIPTION
FEATURES
The DG441L, DG442L are low voltage pin-for-pin
compatible companion devices to the industry standard
DG441L, DG442L with improved performance.
•
Halogen-free according to IEC 61249-2-21
Definition
• 2.7 V thru 12 V single supply or
3 V thru 6 V dual supply
Using BiCMOS wafer fabrication technology allows the
DG441L, DG442L to operate on single and dual supplies.
Single supply voltage ranges from 3 V to 12 V while dual
supply operation is recommended with 3 V to 6 V.
• On-resistance - R
•
: 17
DS(on)
Fast switching - tON: 20 ns
- tOFF: 12 ns
TTL, CMOS compatible
Low leakage: 0.25 nA
2000 V ESD protection
•
•
•
•
Combining high speed (tON: 20 ns), flat RDS(on) over the
analog signal range (5 ), minimal insertion lose (- 3 dB at
280 MHz), and excellent crosstalk and off-isolation
performance (- 50 dB at 50 MHz), the DG441L, DG442L are
ideally suited for audio and video signal switching.
Compliant to RoHS Directive 2002/95/EC
BENEFITS
•
•
•
•
Widest dynamic range
The DG441L, DG442L responds to opposite control logic as
shown in the Truth Table open and two normally closed
switches.
Low signal errors and distortion
Break-before-make switching action
Simple interfacing
APPLICATIONS
•
•
•
•
•
•
•
Precision automatic test equipment
Precision data acquisition
Communication systems
Battery powered systems
Computer peripherals
SDSL, DSLAM
Audio and video signal routing
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
Dual-In-Line, TSSOP and SOIC
TRUTH TABLE
Logic
DG441L
On
DG442L
Off
IN
D
IN
D
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
1
1
1
2
0
1
Off
On
2
Logic "0" 0.8 V
Logic "1" 2.4 V
S
S
2
ORDERING INFORMATION
Temp. Range
V-
V+
Package
Part Number
DG441LDQ-T1-E3
DG442LDQ-T1-E3
DG441LDY-T1-E3
DG441L/442L
GND
NC
16-pin TSSOP
Top View
- 40 °C to 85 °C
16-pin narrow
SOIC
S
4
S
3
DG442LDY-T1-E3
DG441LAK, DG441LAK/883
DG442LAK, DG442LAK/883
DG441LAZ/883
D
4
D
3
16-pin CerDIP
LCC-20
- 55 °C to 125 °C
IN
4
IN
3
DG442LAZ/883
Document Number: 71399
S11-1066–Rev. E, 30-May-11
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1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441L, DG442L
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS (T = 25 °C, unless otherwise noted)
A
Parameter
Symbol
Limit
- 0.3 to 13
7
Unit
V + to V -
GND to V - A
V
GND - 0.3 to (V +) + 0.3
or 30 mA, whichever occurs first
Digital Inputsa VS, VD
Continuous Current (any terminal)
30
100
mA
°C
Current, S or D (pulsed 1 ms, 10 % duty cycle)
(DQ, DY suffix)
- 65 to 125
- 65 to 150
450
Storage Temperature
(AK suffix)
16-pin TSSOPc
16-pin narrow Body SOICd
16-pin CerDIPe
Power Dissipation (Packages)b
650
900
mW
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 7 mW/°C above 75 °C
d. Derate 7.6 mW/°C above 75 °C
e. Derate 12 mW/°C above 75 °C.
a
SPECIFICATIONS (Single Supply 12 V)
Test Conditions
Unless Otherwise Specified
V + = 12 V, V - = 0 V
A Suffix Limits D Suffix Limits
- 55 °C to 125 °C - 40 °C to 85 °C
Unit
Temp.b Typ.c Min.d Max.d Min.d Max.d
VIN = 2.4 V, 0.8 Vf
Parameter
Symbol
Analog Switch
Analog Signal Rangee
VANALOG
RDS(on)
RDS(on)
IS(off)
Full
0
12
0
12
V
V + = 10.8 V, V - = 0 V
Drain-Source
On-Resistance
Room
Full
20
30
45
30
40
I
S = 10 mA, VD = 2/9 V
On-Resistance Match
Between Channelse
IS = 10 mA, VD = 9 V
Room
0.1
0.5
0.5
Room
Full
- 1
- 15
1
15
- 1
- 10
1
10
VD = 1/11 V, VS = 11/1 V
VS = VD = 11/1 V
Switch Off Leakage Current
Channel On Leakage Current
Room
Full
- 1
- 15
1
15
- 1
- 10
1
10
ID(off)
nA
Room
Full
- 1
- 15
1
15
- 1
- 10
1
10
ID(on)
Digital Control
Input Current, VIN Low
IIL
VIN Under Test = 0.8 V
VIN Under Test = 2.4 V
Full
Full
0.01
- 1.5
- 1.5
1.5
1.5
- 1
- 1
1
1
µA
ns
Input Current, VIN High
IIH
Dynamic Characteristics
Room
Full
20
12
60
80
60
70
tON
Turn-On Time
Turn-Off Time
RL = 300 , CL = 35 pF
VS = 5 V, see figure 2
Room
Full
35
50
35
45
tOFF
Charge Injectione
Off Isolatione
Vg = 0 V, Rg = 0 , CL = 10 nF
RL = 50 , CL = 5 pF , f = 1 MHz
Q
Room
Room
Room
Room
Room
Room
5
71
95
5
pC
dB
OIRR
XTALK
CS(off)
CD(off)
CD(on)
Channel-to-Channel Crosstalke
Source Off Capacitancee
Drain Off Capacitancee
Channel On Capacitancee
Power Supplies
f = 1 MHz
6
pF
µA
15
Positive Supply Current
I+
I-
Full
0.03
1.5
1
-
Room
Full
- 1
- 1
- 5
Negative Supply Current
Ground Current
0.002
VIN = 0 V or 12 V
- 7.5
-
IGND
Full
- 1.5
- 1
0.002
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Document Number: 71399
S11-1066–Rev. E, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441L, DG442L
Vishay Siliconix
a
SPECIFICATIONS (Dual Supply 5 V)
Test Conditions
A Suffix Limits D Suffix Limits
Unless Otherwise Specified
- 55 °C to 125 °C - 40 °C to 85 °C
Unit
V + = 5 V, V - = - 5 V
Temp.b Typ.c
Min.d Max.d Min.d Max.d
Parameter
Symbol
V
IN = 2.4 V, 0.8 Vf
Analog Switch
Analog Signal Rangee
VANALOG
RDS(on)
RDS(on)
IS(off)
Full
- 5
5
- 5
5
V
V + = 5 V, V - = - 5 V
Drain-Source
On-Resistance
Room
Full
20
33
45
33
40
I
S = 10 mA, VD
=
3.5 V
On-Resistance Match
Between Channelse
IS = 10 mA, VD
=
3.5 V
Room
0.1
0.5
0.5
Room
Full
- 1
- 15
1
15
- 1
- 10
1
10
V + = 5.5 , V - = - 5.5 V
VD 4.5 V, VS 4.5 V
Switch Off
Leakage Currentg
=
=
Room
Full
- 1
- 15
1
15
- 1
- 10
1
10
ID(off)
nA
Channel On
Leakage Currentg
V + = 5.5 V, V - = - 5.5 V
S = VD 4.5 V
Room
Full
- 1
- 15
1
15
- 1
- 10
1
10
ID(on)
V
=
Digital Control
Input Current, VIN Lowe
IIL
VIN Under Test = 0.8 V
VIN Under Test = 2.4 V
Full
Full
0.05
0.05
- 1.5
- 1.5
1.5
1.5
- 1
- 1
1
1
µA
ns
Input Current, VIN Highe
IIH
Dynamic Characteristics
Room
Full
21
16
60
83
60
70
tON
Turn-On Time
RL = 300 , CL = 35 pF
VS
=
3.5 V, see figure 2
Room
Full
35
55
35
45
tOFF
Turn-Off Time
Charge Injectione
Off Isolatione
Vg = 0 V, Rg = 0 , CL = 10 nF
RL = 50 , CL = 5 pF , f = 1 MHz
Q
Room
Room
5
pC
dB
OIRR
68
Channel-to-Channel
Crosstalke
XTALK
Room
85
Source Off Capacitancee
Drain Off Capacitancee
Channel On Capacitancee
CS(off)
CD(off)
CD(on)
Room
Room
Room
9
9
f = 1 MHz
pF
µA
20
Power Supplies
Positive Supply Currente
Negative Supply Currente
Ground Currente
I+
-
Full
0.002
1.5
1
Room - 0.002
Full
- 1
- 7.5
- 1
- 5
VIN = 0 V or 5 V
IGND
Full
- 0.002 - 1.5
- 1
Document Number: 71399
S11-1066–Rev. E, 30-May-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441L, DG442L
Vishay Siliconix
a
SPECIFICATIONS (Single Supply 5 V)
Test Conditions
A Suffix Limits D Suffix Limits
Unless Otherwise Specified
- 55 °C to 125 °C - 40 °C to 85 °C
Unit
V + = 5 V, V - = 0 V
Temp.b Typ.c
Min.d Max.d Min.d Max.d
Parameter
Symbol
V
IN = 2.4 V, 0.8 Vf
Analog Switch
Analog Signal Rangee
VANALOG
RDS(on)
Full
5
5
V
Drain-Source
On-Resistancee
V + = 4.5 V
Room
Full
35
50
88
50
75
I
S = 5 mA, VD = 1 V, 3.5 V
IS = 10 mA, VD = 3.5 V
On-Resistance Match
Between Channelse
RDS(on)
Room
0.5
1
1
Dynamic Characteristics
Room
Hot
27
15
50
90
50
60
Turn-On Timee
tON
RL = 300 , CL = 35 pF
ns
VS = 3.5 V, see figure 2
Room
Hot
30
55
30
40
Turn-Off Timee
tOFF
Q
Charge Injectione
Vg = 0 V, Rg = 0 , CL = 10 nF
Room
0.5
pC
Power Supplies
Positive Supply Currente
Negative Supply Currente
Ground Currente
I +
I -
Full
10
200
100
Room - 0.002
Full
- 1
- 7.5
- 1
- 5
VIN = 0 V or 5 V
µA
IGND
Full
- 10
- 200
- 100
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Document Number: 71399
S11-1066–Rev. E, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441L, DG442L
Vishay Siliconix
a
SPECIFICATIONS (Single Supply 3 V)
Test Conditions
A Suffix Limits D Suffix Limits
Unless Otherwise Specified
- 55 °C to 125 °C - 40 °C to 85 °C
Unit
V + = 3 V, V - = 0 V
Temp.b Typ.c
Min.d Max.d Min.d Max.d
Parameter
Symbol
V
IN = 0.4 Vf
Analog Switch
Analog Signal Rangee
VANALOG
RDS(on)
RDS(on)
IS(off)
Full
0
3
0
3
V
V + = 2.7 V, V - = 0 V
S = 5 mA, VD = 0.5, 2.2 V
Drain-Source
On-Resistance
Room
Full
65
1
80
115
80
100
I
On-Resistance Match
Between Channelse
IS = 5 mA, VD = 2.2 V
Room
3
3
Room
Full
- 1
- 15
1
15
- 1
- 10
1
10
Switch Off
Leakage Currentg
V + = 3.3 , V - = 0 V
V
D = 1, 2 V, VS = 2, 1 V
Room
Full
- 1
- 15
1
15
- 1
- 10
1
10
ID(off)
nA
Channel On
Leakage Currentg
V + = 3.3 V, V - = 0 V
S = VD = 1, 2 V
Room
Full
- 1
- 15
1
15
- 1
- 10
1
10
ID(on)
V
Digital Control
Input Current, VIN Lowe
IIL
VIN under test = 0.4 V
VIN under test = 2.4 V
Full
Full
0.005
0.005
- 1.5
- 1.5
1.5
1.5
- 1
- 1
1
1
µA
ns
Input Current, VIN Highe
IIH
Dynamic Characteristics
Room
Full
50
30
136
175
136
151
tON
Turn-On Time
RL = 300 , CL = 35 pF
VS = 1.5 V, see figure 2
Room
Full
100
140
100
125
tOFF
Turn-Off Time
Charge Injectione
Off Isolatione
Vg = 0 V, Rg = 0 , CL = 10 nF
RL = 50 , CL = 5 pF , f = 1 MHz
Q
Room
Room
1
pC
dB
OIRR
68
Channel-to-Channel
Crosstalke
XTALK
Room
85
Source Off Capacitancee
Drain Off Capacitancee
Channel On Capacitancee
CS(off)
CD(off)
CD(on)
Room
Room
Room
6
6
f = 1 MHz
pF
20
Notes:
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this datasheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
g. Leakage parameters are guaranteed by worst case test conditions and not subject to test.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 71399
S11-1066–Rev. E, 30-May-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441L, DG442L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
50
40
30
20
10
0
100
80
60
40
20
0
V+ = 5 V
V- = 0 V
A
B
C
V
= 2.7 V
CC
D
E
V
= 4.5 V
CC
A =125 °C
B = 85 °C
C = 25 °C
D = - 40 °C
E = - 55 °C
V
= 12 V
CC
0
3
6
9
12
0
1
2
3
4
5
Drain Voltage (V)
Drain Voltage (V)
RDS(on) vs. Drain Voltage
(Single Supply)
RDS(on) vs. Drain Voltage and Temperature
(Single Supply)
30
20
35
28
21
14
7
V+ = 5 V
V- = - 5 V
V
=
5 V
A
10
B
C
I
D(on)
0
I
D(off)
D
E
I
S(off)
- 10
- 20
- 30
A = 125 °C
B = 85 °C
C = 25 °C
D = - 40 °C
E = - 55 °C
0
- 5
- 3
- 1
1
3
5
- 5
- 3
- 1
1
3
5
V
or V – Drain-Source Voltage
S
Drain Voltage (V)
D
RDS(on) vs. Drain Voltage and Temperature
(Dual Supply)
Leakage Current vs. Analog Voltage
(Dual Supply)
45
36
27
18
9
50
40
30
20
10
0
t
ON
t
ON
t
OFF
t
OFF
0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
0
3
6
9
12
15
V
Positive Supply Voltage (V)
V
ꢀPosisꢁv ꢂSuupl ꢁPpitav ꢃVꢄ
Switching Time vs. Single Supply
Switching Time vs. Dual Supply
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Document Number: 71399
S11-1066–Rev. E, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441L, DG442L
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
6
4
V
=
5 V
SUPPLY
2
0
V
= 3 V
SUPPLY
- 2
- 5
- 3
- 1
1
3
5
Drain Voltage (V)
Charge Injection vs. Drain Voltage
1.8
1.5
1.2
0.9
0.6
0.3
0.0
7
6
5
C
at V = 5 V
CC
D(off)
C
D(off)
at V = 12 V
CC
C
at V = 3 V
CC
D(off)
4
3
2
1
0
0
3
6
9
12
0
2
4
6
8
10
12
14
V
–Drain Voltage (V)
V
Positive Supply Voltage (V)
D
Input Threshold vs. Single Supply Voltage
Drain Capacitance vs. Drain Voltage
(Single Supply)
25
20
15
10
5
10
V
=
5 V
SUPPLY
C
D(on)
- 10
V+ = 3 V
V- = 0 V
Insertion Loss
- 3 dB = 280 MHz
R
L
= 50
- 30
- 50
- 70
Off Isolation
Crosstalk
C /C
S
D(off)
- 90
0
- 110
- 5
- 3
- 1
1
3
5
0.1
1
10
Frequency (MHz)
100
1000
Analog Voltage (V)
Capacitance vs. Analog Signal
(Dual Supply)
Insertion Loss, Off Isolation and Crosstalk
vs. Frequency (Single Supply)
Document Number: 71399
S11-1066–Rev. E, 30-May-11
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441L, DG442L
Vishay Siliconix
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
5 V Reg
S
V-
Level
IN
X
Shift/
Drive
V+
GND
D
V-
Figure 1.
TEST CIRCUITS
V+
3 V
0 V
Logic
Input
t < 20 ns
r
t < 20 ns
f
50 % 50 %
V+
S
D
V
V
S
O
t
OFF
Switch
Input
V
S
IN
R
1 k
C
L
35 pF
L
V
O
80 %
80 %
3 V
GND
V-
Switch
Output
0 V
t
ON
V-
C
L
(includes fixture and stray capacitance)
Note:
Figure 2. Switching Time
Logic input waveform is inverted for DG442.
V+
V+
V
O
V
O
R
g
S
D
IN
X
V
O
OFF
ON
ON
OFF
OFF
(DG441)
IN
C
1 nF
L
3 V
V-
V-
GND
OFF
IN
X
Q = V x C
O
L
(DG442)
Figure 3. Charge Injection
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Document Number: 71399
S11-1066–Rev. E, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441L, DG442L
Vishay Siliconix
TEST CIRCUITS
C = 1 µF tantalum in parallel with 0.01 µF ceramic
V+
V+
C
S
D
D
V
1
1
S
R
g
= 50
50
IN
1
0 V, 2.4 V
V
O
L
S
2
2
NC
0 V, 2.4 V
R
IN
2
GND
V-
V-
C
V
S
X
Isolation = 20 log
TA L K
V
O
C = RF bypass
Figure 4. Crosstalk
V+
C
V+
V
O
S
D
V
S
R
= 50
g
R
L
IN
0 V, 2.4 V
GND
V-
C
V-
V
V
S
Off Isolation = 20 log
O
Figure 5. Off Isolation
V+
C
S
D
V+
Meter
IN
HP4192A
Impedance
Analyzer
0 V, 2.4 V
or Equivalent
GND
V-
C
V-
Figure 6. Source/Drain Capacitances
Document Number: 71399
S11-1066–Rev. E, 30-May-11
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This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG441L, DG442L
Vishay Siliconix
APPLICATIONS
+ 24 V
+ 12 V
R
L
V+
I = 3A
DG442L
150
10 k
+ 12 V
IN
VN0300L, M
+ 12 V
V
IN
1/4 DG442L
S
D
+
-
V
OUT
+ 12 V
+
-
C
H
GND
V-
IN
0 V
H = Sample
L = Hold
0 = Load Off
1 = Load On
Figure 8. Open Loop Sample-and-Hold
Figure 7. Power MOSFET Driver
V
IN
+
-
V
OUT
+ 12 V
V+
Gain error is determined only by the resistor
tolerance. Op amp offset and CMRR will limit ac-
curacy of circuit.
GAIN
1
R
90 k
1
A
= 1
V
With SW Closed
4
R
2
5 k
GAIN
2
A
= 10
V
V
R + R + R + R
1 2 3 4
OUT
=
= 100
V
R
4
IN
R
4 k
3
GAIN
3
A
= 20
V
R
1 k
4
GAIN
4
A
= 100
V
DG441L or DG442L
V-
GND
V
Figure 9. Precision-Weighted Resistor Programmable-Gain Amplifier
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see www.vishay.com/ppg?71399.
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10
Document Number: 71399
S11-1066–Rev. E, 30-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW): 16ĆLEAD
JEDEC Part Number: MS-012
MILLIMETERS
INCHES
Dim
A
A1
B
C
D
Min
1.35
0.10
0.38
0.18
9.80
3.80
Max
1.75
0.20
0.51
0.23
10.00
4.00
Min
Max
0.069
0.008
0.020
0.009
0.393
0.157
0.053
0.004
0.015
0.007
0.385
0.149
E
16 15
14 13
12 11
10
7
9
8
1.27 BSC
0.050 BSC
e
H
L
Ĭ
5.80
0.50
0_
6.20
0.93
8_
0.228
0.020
0_
0.244
0.037
8_
E
1
2
3
4
5
6
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300
H
D
C
All Leads
0.101 mm
0.004 IN
A1
Ĭ
L
e
B
Document Number: 71194
02-Jul-01
www.vishay.com
1
Package Information
Vishay Siliconix
TSSOP: 16-LEAD
DIMENSIONS IN MILLIMETERS
Symbols
Min
-
Nom
1.10
0.10
1.00
0.28
0.127
5.00
6.40
4.40
0.65
0.60
1.00
-
Max
1.20
0.15
1.05
0.38
-
A
A1
A2
B
0.05
-
0.22
-
C
D
4.90
6.10
4.30
-
5.10
6.70
4.50
-
E
E1
e
L
0.50
0.90
-
0.70
1.10
0.10
6°
L1
y
θ1
0°
3°
ECN: S-61920-Rev. D, 23-Oct-06
DWG: 5624
Document Number: 74417
23-Oct-06
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-16
0.372
(9.449)
0.047
(1.194)
0.022
0.050
0.028
(0.559)
(1.270)
(0.711)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
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24
Document Number: 72608
Revision: 21-Jan-08
Legal Disclaimer Notice
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Document Number: 91000
Revision: 11-Mar-11
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1
相关型号:
DG441LAZ/883
IC QUAD 1-CHANNEL, SGL POLE SGL THROW SWITCH, QCC20, LCC-20, Multiplexer or Switch
VISHAY
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