DG419B [VISHAY]

Precision Monolithic Quad SPST CMOS Analog Switches; 精密单片四路SPST CMOS模拟开关
DG419B
型号: DG419B
厂家: VISHAY    VISHAY
描述:

Precision Monolithic Quad SPST CMOS Analog Switches
精密单片四路SPST CMOS模拟开关

开关
文件: 总10页 (文件大小:164K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DG417B/418B/419B  
Vishay Siliconix  
Precision Monolithic Quad SPST CMOS Analog Switches  
DESCRIPTION  
FEATURES  
The DG417B/418B/419B monolithic CMOS analog switches  
were designed to provide high performance switching of  
analog signals. Combining low power, low leakages, high  
speed, low on-resistance and small physical size, the  
DG417B series is ideally suited for portable and battery  
powered industrial and military applications requiring high  
performance and efficient use of board space.  
15 V Analog Signal Range  
Pb-free  
On-Resistance - rDS(on): 15 Ω  
Fast Switching Action - tON: 110 ns  
TTL and CMOS Compatible  
Available  
RoHS*  
COMPLIANT  
MSOP-8 and SOIC-8 Package  
BENEFITS  
Widest Dynamic Range  
To achieve high-voltage ratings and superior switching  
performance, the DG417B series is built on Vishay  
Siliconix’s high voltage silicon gate (HVSG) process.  
Break-before-make is guaranteed for the DG419B, which is  
an SPDT configuration. An epitaxial layer prevents latchup.  
Low Signal Errors and Distortion  
Break-Before-Make Switching Action  
Simple Interfacing  
Reduced Board Space  
Improved Reliability  
Each switch conducts equally well in both directions when  
on, and blocks up to the power supply level when off.  
APPLICATIONS  
Precision Test Equipment  
Precision Instrumentation  
Battery Powered Systems  
Sample-and-Hold Circuits  
Military Radios  
The DG417B and DG418B respond to opposite control logic  
levels as shown in the Truth Table.  
Guidance and Control Systems  
Hard Disk Drivers  
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION  
DG417B  
Dual-In-Line, SOIC-8 and MSOP-8  
1
2
3
4
8
7
6
5
S
NC  
D
TRUTH TABLE  
V-  
IN  
Logic  
DG417B  
DG418B  
OFF  
ON  
GND  
V+  
0
1
ON  
OFF  
V
L
Logic "0" 0.8 V  
Logic "1" 2.4 V  
Top View  
DG419B  
Dual-In-Line, SOIC-8 and MSOP-8  
TRUTH TABLE - DG419B  
1
2
3
4
8
7
6
5
D
S
2
SW1  
SW2  
Logic  
S
V-  
IN  
V
1
GND  
V+  
0
1
ON  
OFF  
ON  
OFF  
L
Logic "0" 0.8 V  
Logic "1" 2.4 V  
Top View  
* Pb containing terminations are not RoHS compliant, exemptions may apply  
Document Number: 72107  
S-71009–Rev. C, 14-May-07  
www.vishay.com  
1
DG417B/418B/419B  
Vishay Siliconix  
ORDERING INFORMATION  
Temp Range  
Package  
Part Number  
DG417B/418B  
DG417BDJ  
DG417BDJ-E3  
8-Pin Plastic MiniDIP  
8-Pin Narrow SOIC  
DG418BDJ  
DG418BDJ-E3  
DG417BDY  
DG417BDY-E3  
DG417BDY-T1  
DG417BDY-T1-E3  
- 40 to 85 °C  
DG418BDY  
DG418BDY-E3  
DG418BDY-T1  
DG418BDY-T1-E3  
DG417BDQ-T1-E3  
DG418BDQ-T1-E3  
8-Pin MSOP  
DG419B  
DG419BDJ  
DG419BDJ-E3  
8-Pin Plastic MiniDIP  
DG419BDY  
DG419BDY-E3  
DG419BDY-T1  
DG419BDY-T1-E3  
- 40 to 85 °C  
8-Pin Narrow SOIC  
8-Pin MSOP  
DG419BDQ-T1-E3  
ABSOLUTE MAXIMUM RATINGS  
Parameter  
Limit  
Unit  
V-  
- 20  
V+  
GND  
VL  
20  
25  
V
(GND - 0.3 V) to (V+) + 0.3  
(V-) - 2 V to (V+) + 2  
or 30 mA, whichever occurs first  
Digital Inputsa, VS, VD  
Current, (Any Terminal) Continuous  
Current (S or D) Pulsed at 1 ms, 10 % duty cycle  
Storage Temperature  
30  
100  
mA  
°C  
- 65 to 150  
400  
8-Pin Plastic MiniDIPc  
8-Pin Narrow SOICc  
8-Pin MSOPd  
400  
Power Dissipation (Package)b  
mW  
400  
8-Pin CerDIPe  
600  
Notes:  
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.  
b. All leads welded or soldered to PC Board.  
c. Derate 5.3 mW/°C above 75 °C.  
d. Derate 4 mW/°C above 70 °C.  
e. Derate 8 mW/°C above 75 °C.  
www.vishay.com  
2
Document Number: 72107  
S-71009–Rev. C, 14-May-07  
DG417B/418B/419B  
Vishay Siliconix  
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)  
V+  
S
V
L
V -  
Level  
Shift/  
Drive  
V
IN  
V+  
GND  
V -  
D
Figure 1.  
a
SPECIFICATIONS  
Test Conditions  
Unless Otherwise Specified  
V+ = 15 V, V- = - 15 V  
A Suffix  
- 55 to 125 °C - 40 to 85 °C  
D Suffix  
VL = 5 V, VIN = 2.4 V, 0.8 Vf  
Parameter  
Symbol  
Tempb  
Typc  
Mind Maxd Mind Maxd Unit  
Analog Switch  
Analog Signal Rangee  
VANALOG  
rDS(on)  
IS(off)  
Full  
- 15  
15  
- 15  
15  
V
IS = - 10 mA, VD  
=
12.5 V  
Drain-Source  
On-Resistance  
Room  
Full  
25  
34  
25  
29  
15  
Ω
V+ = 13.5 V, V- = - 13.5 V  
Room  
Full  
DG417B Room  
- 0.25 0.25 - 0.25 0.25  
- 20 20 - 5  
- 0.25 0.25 - 0.25 0.25  
- 20 20 - 5  
- 0.75 0.75 - 0.75 0.75  
- 60  
- 0.4  
- 40  
- 0.1  
- 0.1  
- 0.1  
- 0.4  
- 0.4  
5
V+ = 16.5, V- = - 16.5 V  
VD 15.5 V, VS 15.5 V  
Switch Off Leakage Current  
Channel On Leakage Current  
=
=
DG418B  
Full  
Room  
Full  
5
ID(off)  
DG419B  
nA  
60  
0.4  
40  
- 12  
- 0.4  
- 10  
12  
0.4  
10  
DG417B Room  
DG418B  
Full  
Room  
Full  
V+ = 16.5 V, V- = - 16.5 V  
S = VD 15.5 V  
ID(on)  
- 0.75 0.75 - 0.75 0.75  
- 60  
V
=
DG419B  
60  
- 12  
12  
Digital Control  
Input Current, VIN Low  
Input Current, VIN High  
IIL  
Full  
Full  
- 0.5  
- 0.5  
0.5  
0.5  
- 0.5  
- 0.5  
0.5  
0.5  
µA  
ns  
IIH  
Dynamic Characteristics  
DG417B Room  
DG418B Full  
DG417B Room  
89  
106  
80  
89  
99  
80  
86  
RL = 300 Ω, CL = 35 pF  
tON  
Turn-On Time  
62  
53  
VS  
=
10 V, See Switching  
Time Test Circuit  
tOFF  
Turn-Off Time  
DG418B  
Full  
88  
RL = 300 Ω, CL = 35 pF  
VS1 10 V, VS2 10 V  
RL = 300 Ω, CL = 35 pF  
S1 = VS2 10 V  
Room  
Full  
87  
96  
87  
93  
tTRANS  
Transition Time  
DG419B  
60  
16  
=
=
Break-Before-Make  
Time Delay  
tD  
Q
DG419B Room  
3
3
V
=
CL = 10 nF  
Charge Injection  
Off Isolatione  
Room  
Room  
4
pC  
dB  
V
gen = 0 V, Rgen = 0 Ω  
RL = 50 Ω, CL = 5 pF,  
- 86  
- 87  
OIRR  
XTALK  
f = 1 MHz  
Channel-to-Channel  
Crosstalke  
DG419B Room  
Document Number: 72107  
S-71009–Rev. C, 14-May-07  
www.vishay.com  
3
DG417B/418B/419B  
Vishay Siliconix  
a
SPECIFICATIONS  
Test Conditions  
Unless Otherwise Specified  
V+ = 15 V, V- = - 15 V  
A Suffix  
- 55 to 125 °C - 40 to 85 °C  
D Suffix  
VL = 5 V, VIN = 2.4 V, 0.8 Vf  
Parameter  
Symbol  
Tempb  
Typc  
Mind Maxd Mind Maxd Unit  
Source Off Capacitancee  
CS(off)  
Room  
12  
f = 1 MHz, VS = 0 V  
f = 1 MHz, VS = 0 V  
DG417B  
DG418B  
DG417B  
DG418B  
DG419B  
Drain Off Capacitancee  
CD(off)  
Room  
12  
pF  
Room  
Room  
50  
57  
Channel On Capacitancee  
CD(on)  
Power Supplies  
Room  
Full  
Room  
Full  
Room  
Full  
Room  
Full  
0.001  
- 0.001  
0.001  
1
5
1
5
Positive Supply Current  
I+  
I-  
- 1  
- 5  
- 1  
- 5  
Negative Supply Current  
Logic Supply Current  
Ground Current  
V+ = 16.5 V, V- = - 16.5 V  
VIN = 0 or 5 V  
µA  
1
5
1
5
IL  
- 0.001  
- 1  
- 5  
- 1  
- 5  
IGND  
a
SPECIFICATIONS  
Test Conditions  
Unless Otherwise Specified  
V+ = 12 V, V- = 0 V  
A Suffix  
- 55 to 125 °C - 40 to 85 °C  
D Suffix  
VL = 5 V, VIN = 2.4 V, 0.8 Vf  
Parameter  
Symbol  
VANALOG  
rDS(on)  
Tempb  
Typc  
Mind Maxd Mind Maxd Unit  
Analog Switch  
Analog Signal Rangee  
Full  
0
12  
0
12  
V
IS = - 10 mA, VD = 3.8 V  
V+ = 10.8 V,  
Drain-Source  
On-Resistance  
Room  
Full  
35  
52  
35  
45  
Ω
26  
Dynamic Characteristics  
Room  
Full  
Room  
Full  
125  
155  
66  
125  
143  
66  
RL = 300 Ω, CL = 35 pF  
VS = 8 V, See Switching  
Time Test Circuit  
tON  
tOFF  
tD  
Turn-On Time  
100  
Turn-Off Time  
38  
62  
73  
69  
ns  
Break-Before-Make  
Time Delay  
RL = 300 Ω, CL = 35 pF  
DG419B Room  
25  
25  
RL = 300 Ω, CL = 35 pF  
VS1 = 0 V, 8 V, VS2 = 8 V, 0 V  
CL = 10 nF, Vgen = 0 V, Rgen = 0 Ω  
Room  
Full  
119  
153  
119  
141  
tTRANS  
Q
Transition Time  
95  
3
Charge Injection  
Room  
pC  
Power Supplies  
Room  
Full  
1
5
1
5
Positive Supply Current  
Negative Supply Current  
Logic Supply Current  
I+  
I-  
0.001  
- 0.001  
0.001  
- 1  
- 5  
- 1  
- 5  
Room  
Room  
Room  
V+ = 13.2 V, VL = 5.25 V  
VIN = 0 or 5 V  
µA  
1
5
1
5
IL  
- 1  
- 5  
-1  
- 5  
IGND  
Ground Current  
Notes:  
- 0.001  
a. Refer to PROCESS OPTION FLOWCHART.  
b. Room = 25 °C, Full = as determined by the operating temperature suffix.  
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.  
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.  
e. Guaranteed by design, not subject to production test.  
f. VIN = input voltage to perform proper function.  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation  
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum  
rating conditions for extended periods may affect device reliability.  
www.vishay.com  
4
Document Number: 72107  
S-71009–Rev. C, 14-May-07  
DG417B/418B/419B  
Vishay Siliconix  
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted  
A
300  
250  
200  
150  
100  
50  
40  
35  
30  
25  
20  
15  
10  
5
T
V
= 25 °C  
= 5 V  
T
A
= 25 °C  
A
L
5 V  
V+ = 3.0 V  
V
L
= 3 V  
8 V  
10 V  
12 V  
15 V  
V+ = 12.0 V  
V+ = 15.0 V  
V+ = 5.0 V  
V+ = 8.0 V  
V+ = 20.0 V  
20 V  
0
0
4
8
12  
16  
20  
- 20 - 15 - 10  
- 5  
0
5
10  
15  
20  
V
D
– Drain Voltage (V)  
V
D
– Drain Voltage (V)  
On-Resistance vs. V and Unipolar Power Supply Voltage  
D
On-Resistance vs. VD and Dual Supply Voltage  
50  
30  
V
V
=
15 V  
45  
40  
35  
30  
25  
20  
15  
10  
5
= 5 V  
L
25  
20  
15  
10  
5
125 °C  
85 °C  
125 °C  
85 °C  
25 °C  
25 °C  
- 55 °C  
- 55 °C  
V+ = 12 V  
V- = 0 V  
V
L
= 5 V  
0
2
4
6
8
10  
12  
- 15  
- 10  
- 5  
0
5
10  
15  
V
D
– Drain Voltage (V)  
V
D
– Drain Voltage (V)  
On-Resistance vs. VD and Temperature  
On-Resistance vs. VD and Temperature  
100 m  
100  
80  
V
L
=
15 V  
V
V
T
A
=
15 V  
10 m  
1 m  
V
= 5 V  
= 5 V  
= 25 °C  
L
60  
40  
100 µ  
I
D(on)  
I
I+, I-  
D(off)  
20  
10 µ  
1 µ  
0
I
L
- 20  
- 40  
- 60  
- 80  
- 100  
I
S(off)  
100 n  
10 n  
1 n  
100 p  
-15  
- 10  
- 5  
0
5
10  
15  
10  
100  
1 K  
Input Switching Frequency (Hz)  
Supply Current vs. Input Switching Frequency  
10 K  
100 K  
1 M  
10 M  
V
D
or V – Drain or Source Voltage (V)  
S
Leakage vs. Analog Voltage  
Document Number: 72107  
S-71009–Rev. C, 14-May-07  
www.vishay.com  
5
DG417B/418B/419B  
Vishay Siliconix  
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted  
A
100  
90  
80  
70  
60  
50  
40  
30  
20  
140  
120  
100  
80  
V
L
= 5 V  
V
V
=
15 V  
= 5 V  
L
t
V = 12 V  
ON  
t
TRANS-  
t
TRANS+  
t
V = 15 V  
ON  
t
V = 15 V  
OFF  
60  
t
V = 12 V  
OFF  
40  
20  
- 55 - 35 - 15  
5
25  
45  
65  
85 105 125  
- 55 - 35 - 15  
5
25  
45  
65  
85 105 125  
Temperature ( C)  
Temperature ( C)  
Transition Time vs. Temperature  
Switching Time vs. Temperature  
140  
120  
100  
80  
10  
V+ = 12 V  
V– = 0 V  
- 10  
Loss  
V
L
= 5 V  
t
TRANS-  
- 30  
- 50  
- 70  
X
TALK  
OIRR  
t
TRANS+  
60  
V+ = 3 V  
V– = 0 V  
- 90  
40  
R
L
= 50  
20  
- 110  
- 55 - 35 - 15  
5
25  
45  
65  
85 105 125  
100 k  
1 M  
10 M  
100 M  
1 G  
Temperature ( C)  
Frequency (Hz)  
Insertation Loss, Off -Isolation Crosstalk vs. Frequency  
Transition Time vs. Temperature  
30  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
25  
V
= 5 V  
L
C = 10 nF  
20  
15  
10  
V = 15 V  
5
0
V+ = 12 V  
- 5  
- 10  
- 15  
- 20  
- 25  
- 30  
- 15 - 12 - 9 - 6 - 3  
0
3
6
9
12 15  
4
6
8
10  
V+ – Supply Voltage (V)  
Switching Threshold vs. Supply Voltage  
12  
14  
16  
18  
20  
V
S
– Analog Voltage (V)  
Charge Injection vs. Analog Voltage  
www.vishay.com  
6
Document Number: 72107  
S-71009–Rev. C, 14-May-07  
DG417B/418B/419B  
Vishay Siliconix  
TEST CIRCUITS  
V
O
is the steady state output with the switch on.  
+ 5 V  
+ 15 V  
3 V  
0 V  
t < 5 ns  
t < 5 ns  
f
r
Logic  
Input  
50 %  
V
L
V+  
D
S
V
O
10 V  
t
OFF  
Switch  
Input  
V
S
IN  
GND  
V
O
R
300  
C
35 pF  
L
L
90 %  
V–  
Switch  
Output  
0 V  
t
ON  
- 15 V  
C
L
(includes fixture and stray capacitance)  
Note: Logic input waveform is inverted for switches that have the  
opposite logic sense.  
R
L
V
O
= V  
S
R
L
+ r  
DS(on)  
Figure 2. Switching Time (DG417B/418B)  
+ 5 V  
+ 1 V  
V+  
Logic  
3 V  
Input  
t < 5 ns  
t < 5 ns  
f
r
V
L
0 V  
S
S
1
D
V
S1  
V
O
2
V
S2  
V
S1  
= V  
S2  
V
R
300  
C
L
35 pF  
L
90 %  
O
IN  
Switch  
Output  
0 V  
V -  
GND  
t
D
t
D
C
L
(includes fixture and stray capacitance)  
- 15 V  
Figure 3. Break-Before-Make (DG419B)  
+ 5 V  
+ 15 V  
V
L
V+  
3 V  
t < 5 ns  
r
t < 5 ns  
f
Logic  
Input  
S
D
50 %  
1
V
S1  
V
O
0 V  
S
2
V
S2  
t
t
TRANS  
TRANS  
R
300  
C
L
35 pF  
L
V
S1  
IN  
GND  
V
01  
90 %  
V -  
Switch  
Output  
10 %  
V
02  
V
S2  
- 15 V  
(includes fixture and stray capacitance)  
C
L
R
L
V
O
= V  
S
R
L
+ r  
DS(on)  
Figure 4. Transition Time (DG419B)  
Document Number: 72107  
S-71009–Rev. C, 14-May-07  
www.vishay.com  
7
DG417B/418B/419B  
Vishay Siliconix  
TEST CIRCUITS  
+ 5 V  
+ 15 V  
V
O
V
O
V
L
V+  
D
R
g
S
V
O
IN  
X
OFF  
ON  
OFF  
IN  
GND  
C
10 nF  
L
3 V  
V -  
Q =  
V x C  
O L  
- 15 V  
Figure 5. Charge Injection  
+ 5 V  
+ 15 V  
C
C
+ 5 V  
+ 15 V  
C
C
V
V+  
D
L
S
S
V
S
1
V
L
V+  
V
R
g
= 50  
O
S
D
V
S
50  
R
g
= 50  
V
O
2
R
L
IN  
0 V, 2.4 V  
R
L
IN  
GND  
GND  
V -  
C
V
0.8 V  
C
V -  
- 15 V  
- 15 V  
O
Off Isolation = 20 log  
V
O
V
S
X
Isolation = 20 log  
TALK  
V
S
C = RF bypass  
Figure 7. Off isolation  
Figure 6. Crosstalk  
+ 5 V  
+ 15 V  
V+  
C
C
V
L
S
D
V
S
V
O
R
g
= 50  
R
L
IN  
0 V, 2.4 V  
GND  
V-  
C
- 15 V  
Figure 8. Insertion Loss  
www.vishay.com  
8
Document Number: 72107  
S-71009–Rev. C, 14-May-07  
DG417B/418B/419B  
Vishay Siliconix  
TEST CIRCUITS  
+ 5 V  
+ 15 V  
+ 15 V  
NC  
C
C
C
V
L
V+  
S
D
S
S
1
V+  
2
DG417B/418B  
DG419B  
IN  
Meter  
Meter  
0 V, 2.4 V  
0 V, 2.4 V  
IN  
HP4192A  
Impedance  
Analyzer  
HP4192A  
Impedance  
Analyzer  
or Equivalent  
or Equivalent  
D
2
D
1
GND  
V-  
GND  
f = 1 MHz  
f = 1 MHz  
V-  
C
C
- 15 V  
- 15 V  
Figure 9. Source/Drain Capacitances  
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-  
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability  
data, see http://www.vishay.com/ppg?72107.  
www.vishay.com  
9
Document Number: 72107  
S-71009–Rev. C, 14-May-07  
Legal Disclaimer Notice  
Vishay  
Disclaimer  
All product specifications and data are subject to change without notice.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf  
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein  
or in any other disclosure relating to any product.  
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any  
information provided herein to the maximum extent permitted by law. The product specifications do not expand or  
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed  
therein, which apply to these products.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this  
document or by any conduct of Vishay.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless  
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such  
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting  
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding  
products designed for such applications.  
Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 18-Jul-08  
www.vishay.com  
1

相关型号:

DG419BAK

Precision CMOS Analog Switches
VISHAY

DG419BAK-E3

PRECISION CMOS ANALOG SWITCH
VISHAY

DG419BAK/883

Precision CMOS Analog Switches
VISHAY

DG419BDJ

Precision CMOS Analog Switches
VISHAY

DG419BDJ-E3

Precision Monolithic Quad SPST CMOS Analog Switches
VISHAY

DG419BDQ

Precision CMOS Analog Switches
VISHAY

DG419BDQ-E3

IC 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO8, LEAD FREE, MSOP-8, Multiplexer or Switch
VISHAY

DG419BDQ-T1-E3

Precision Monolithic Quad SPST CMOS Analog Switches
VISHAY

DG419BDY

Precision CMOS Analog Switches
VISHAY

DG419BDY-E3

Precision Monolithic Quad SPST CMOS Analog Switches
VISHAY

DG419BDY-T1

Precision Monolithic Quad SPST CMOS Analog Switches
VISHAY

DG419BDY-T1-E3

Precision Monolithic Quad SPST CMOS Analog Switches
VISHAY