DG419B [VISHAY]
Precision Monolithic Quad SPST CMOS Analog Switches; 精密单片四路SPST CMOS模拟开关型号: | DG419B |
厂家: | VISHAY |
描述: | Precision Monolithic Quad SPST CMOS Analog Switches |
文件: | 总10页 (文件大小:164K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DG417B/418B/419B
Vishay Siliconix
Precision Monolithic Quad SPST CMOS Analog Switches
DESCRIPTION
FEATURES
The DG417B/418B/419B monolithic CMOS analog switches
were designed to provide high performance switching of
analog signals. Combining low power, low leakages, high
speed, low on-resistance and small physical size, the
DG417B series is ideally suited for portable and battery
powered industrial and military applications requiring high
performance and efficient use of board space.
•
•
•
•
•
15 V Analog Signal Range
Pb-free
On-Resistance - rDS(on): 15 Ω
Fast Switching Action - tON: 110 ns
TTL and CMOS Compatible
Available
RoHS*
COMPLIANT
MSOP-8 and SOIC-8 Package
BENEFITS
•
•
•
•
•
•
Widest Dynamic Range
To achieve high-voltage ratings and superior switching
performance, the DG417B series is built on Vishay
Siliconix’s high voltage silicon gate (HVSG) process.
Break-before-make is guaranteed for the DG419B, which is
an SPDT configuration. An epitaxial layer prevents latchup.
Low Signal Errors and Distortion
Break-Before-Make Switching Action
Simple Interfacing
Reduced Board Space
Improved Reliability
Each switch conducts equally well in both directions when
on, and blocks up to the power supply level when off.
APPLICATIONS
•
•
•
•
•
•
•
Precision Test Equipment
Precision Instrumentation
Battery Powered Systems
Sample-and-Hold Circuits
Military Radios
The DG417B and DG418B respond to opposite control logic
levels as shown in the Truth Table.
Guidance and Control Systems
Hard Disk Drivers
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG417B
Dual-In-Line, SOIC-8 and MSOP-8
1
2
3
4
8
7
6
5
S
NC
D
TRUTH TABLE
V-
IN
Logic
DG417B
DG418B
OFF
ON
GND
V+
0
1
ON
OFF
V
L
Logic "0" ≤ 0.8 V
Logic "1" ≥ 2.4 V
Top View
DG419B
Dual-In-Line, SOIC-8 and MSOP-8
TRUTH TABLE - DG419B
1
2
3
4
8
7
6
5
D
S
2
SW1
SW2
Logic
S
V-
IN
V
1
GND
V+
0
1
ON
OFF
ON
OFF
L
Logic "0" ≤ 0.8 V
Logic "1" ≥ 2.4 V
Top View
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 72107
S-71009–Rev. C, 14-May-07
www.vishay.com
1
DG417B/418B/419B
Vishay Siliconix
ORDERING INFORMATION
Temp Range
Package
Part Number
DG417B/418B
DG417BDJ
DG417BDJ-E3
8-Pin Plastic MiniDIP
8-Pin Narrow SOIC
DG418BDJ
DG418BDJ-E3
DG417BDY
DG417BDY-E3
DG417BDY-T1
DG417BDY-T1-E3
- 40 to 85 °C
DG418BDY
DG418BDY-E3
DG418BDY-T1
DG418BDY-T1-E3
DG417BDQ-T1-E3
DG418BDQ-T1-E3
8-Pin MSOP
DG419B
DG419BDJ
DG419BDJ-E3
8-Pin Plastic MiniDIP
DG419BDY
DG419BDY-E3
DG419BDY-T1
DG419BDY-T1-E3
- 40 to 85 °C
8-Pin Narrow SOIC
8-Pin MSOP
DG419BDQ-T1-E3
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
Unit
V-
- 20
V+
GND
VL
20
25
V
(GND - 0.3 V) to (V+) + 0.3
(V-) - 2 V to (V+) + 2
or 30 mA, whichever occurs first
Digital Inputsa, VS, VD
Current, (Any Terminal) Continuous
Current (S or D) Pulsed at 1 ms, 10 % duty cycle
Storage Temperature
30
100
mA
°C
- 65 to 150
400
8-Pin Plastic MiniDIPc
8-Pin Narrow SOICc
8-Pin MSOPd
400
Power Dissipation (Package)b
mW
400
8-Pin CerDIPe
600
Notes:
a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 5.3 mW/°C above 75 °C.
d. Derate 4 mW/°C above 70 °C.
e. Derate 8 mW/°C above 75 °C.
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2
Document Number: 72107
S-71009–Rev. C, 14-May-07
DG417B/418B/419B
Vishay Siliconix
SCHEMATIC DIAGRAM (TYPICAL CHANNEL)
V+
S
V
L
V -
Level
Shift/
Drive
V
IN
V+
GND
V -
D
Figure 1.
a
SPECIFICATIONS
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
A Suffix
- 55 to 125 °C - 40 to 85 °C
D Suffix
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Parameter
Symbol
Tempb
Typc
Mind Maxd Mind Maxd Unit
Analog Switch
Analog Signal Rangee
VANALOG
rDS(on)
IS(off)
Full
- 15
15
- 15
15
V
IS = - 10 mA, VD
=
12.5 V
Drain-Source
On-Resistance
Room
Full
25
34
25
29
15
Ω
V+ = 13.5 V, V- = - 13.5 V
Room
Full
DG417B Room
- 0.25 0.25 - 0.25 0.25
- 20 20 - 5
- 0.25 0.25 - 0.25 0.25
- 20 20 - 5
- 0.75 0.75 - 0.75 0.75
- 60
- 0.4
- 40
- 0.1
- 0.1
- 0.1
- 0.4
- 0.4
5
V+ = 16.5, V- = - 16.5 V
VD 15.5 V, VS 15.5 V
Switch Off Leakage Current
Channel On Leakage Current
=
=
DG418B
Full
Room
Full
5
ID(off)
DG419B
nA
60
0.4
40
- 12
- 0.4
- 10
12
0.4
10
DG417B Room
DG418B
Full
Room
Full
V+ = 16.5 V, V- = - 16.5 V
S = VD 15.5 V
ID(on)
- 0.75 0.75 - 0.75 0.75
- 60
V
=
DG419B
60
- 12
12
Digital Control
Input Current, VIN Low
Input Current, VIN High
IIL
Full
Full
- 0.5
- 0.5
0.5
0.5
- 0.5
- 0.5
0.5
0.5
µA
ns
IIH
Dynamic Characteristics
DG417B Room
DG418B Full
DG417B Room
89
106
80
89
99
80
86
RL = 300 Ω, CL = 35 pF
tON
Turn-On Time
62
53
VS
=
10 V, See Switching
Time Test Circuit
tOFF
Turn-Off Time
DG418B
Full
88
RL = 300 Ω, CL = 35 pF
VS1 10 V, VS2 10 V
RL = 300 Ω, CL = 35 pF
S1 = VS2 10 V
Room
Full
87
96
87
93
tTRANS
Transition Time
DG419B
60
16
=
=
Break-Before-Make
Time Delay
tD
Q
DG419B Room
3
3
V
=
CL = 10 nF
Charge Injection
Off Isolatione
Room
Room
4
pC
dB
V
gen = 0 V, Rgen = 0 Ω
RL = 50 Ω, CL = 5 pF,
- 86
- 87
OIRR
XTALK
f = 1 MHz
Channel-to-Channel
Crosstalke
DG419B Room
Document Number: 72107
S-71009–Rev. C, 14-May-07
www.vishay.com
3
DG417B/418B/419B
Vishay Siliconix
a
SPECIFICATIONS
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
A Suffix
- 55 to 125 °C - 40 to 85 °C
D Suffix
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Parameter
Symbol
Tempb
Typc
Mind Maxd Mind Maxd Unit
Source Off Capacitancee
CS(off)
Room
12
f = 1 MHz, VS = 0 V
f = 1 MHz, VS = 0 V
DG417B
DG418B
DG417B
DG418B
DG419B
Drain Off Capacitancee
CD(off)
Room
12
pF
Room
Room
50
57
Channel On Capacitancee
CD(on)
Power Supplies
Room
Full
Room
Full
Room
Full
Room
Full
0.001
- 0.001
0.001
1
5
1
5
Positive Supply Current
I+
I-
- 1
- 5
- 1
- 5
Negative Supply Current
Logic Supply Current
Ground Current
V+ = 16.5 V, V- = - 16.5 V
VIN = 0 or 5 V
µA
1
5
1
5
IL
- 0.001
- 1
- 5
- 1
- 5
IGND
a
SPECIFICATIONS
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
A Suffix
- 55 to 125 °C - 40 to 85 °C
D Suffix
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Parameter
Symbol
VANALOG
rDS(on)
Tempb
Typc
Mind Maxd Mind Maxd Unit
Analog Switch
Analog Signal Rangee
Full
0
12
0
12
V
IS = - 10 mA, VD = 3.8 V
V+ = 10.8 V,
Drain-Source
On-Resistance
Room
Full
35
52
35
45
Ω
26
Dynamic Characteristics
Room
Full
Room
Full
125
155
66
125
143
66
RL = 300 Ω, CL = 35 pF
VS = 8 V, See Switching
Time Test Circuit
tON
tOFF
tD
Turn-On Time
100
Turn-Off Time
38
62
73
69
ns
Break-Before-Make
Time Delay
RL = 300 Ω, CL = 35 pF
DG419B Room
25
25
RL = 300 Ω, CL = 35 pF
VS1 = 0 V, 8 V, VS2 = 8 V, 0 V
CL = 10 nF, Vgen = 0 V, Rgen = 0 Ω
Room
Full
119
153
119
141
tTRANS
Q
Transition Time
95
3
Charge Injection
Room
pC
Power Supplies
Room
Full
1
5
1
5
Positive Supply Current
Negative Supply Current
Logic Supply Current
I+
I-
0.001
- 0.001
0.001
- 1
- 5
- 1
- 5
Room
Room
Room
V+ = 13.2 V, VL = 5.25 V
VIN = 0 or 5 V
µA
1
5
1
5
IL
- 1
- 5
-1
- 5
IGND
Ground Current
Notes:
- 0.001
a. Refer to PROCESS OPTION FLOWCHART.
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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4
Document Number: 72107
S-71009–Rev. C, 14-May-07
DG417B/418B/419B
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
300
250
200
150
100
50
40
35
30
25
20
15
10
5
T
V
= 25 °C
= 5 V
T
A
= 25 °C
A
L
5 V
V+ = 3.0 V
V
L
= 3 V
8 V
10 V
12 V
15 V
V+ = 12.0 V
V+ = 15.0 V
V+ = 5.0 V
V+ = 8.0 V
V+ = 20.0 V
20 V
0
0
4
8
12
16
20
- 20 - 15 - 10
- 5
0
5
10
15
20
V
D
– Drain Voltage (V)
V
D
– Drain Voltage (V)
On-Resistance vs. V and Unipolar Power Supply Voltage
D
On-Resistance vs. VD and Dual Supply Voltage
50
30
V
V
=
15 V
45
40
35
30
25
20
15
10
5
= 5 V
L
25
20
15
10
5
125 °C
85 °C
125 °C
85 °C
25 °C
25 °C
- 55 °C
- 55 °C
V+ = 12 V
V- = 0 V
V
L
= 5 V
0
2
4
6
8
10
12
- 15
- 10
- 5
0
5
10
15
V
D
– Drain Voltage (V)
V
D
– Drain Voltage (V)
On-Resistance vs. VD and Temperature
On-Resistance vs. VD and Temperature
100 m
100
80
V
L
=
15 V
V
V
T
A
=
15 V
10 m
1 m
V
= 5 V
= 5 V
= 25 °C
L
60
40
100 µ
I
D(on)
I
I+, I-
D(off)
20
10 µ
1 µ
0
I
L
- 20
- 40
- 60
- 80
- 100
I
S(off)
100 n
10 n
1 n
100 p
-15
- 10
- 5
0
5
10
15
10
100
1 K
Input Switching Frequency (Hz)
Supply Current vs. Input Switching Frequency
10 K
100 K
1 M
10 M
V
D
or V – Drain or Source Voltage (V)
S
Leakage vs. Analog Voltage
Document Number: 72107
S-71009–Rev. C, 14-May-07
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5
DG417B/418B/419B
Vishay Siliconix
TYPICAL CHARACTERISTICS T = 25 °C, unless otherwise noted
A
100
90
80
70
60
50
40
30
20
140
120
100
80
V
L
= 5 V
V
V
=
15 V
= 5 V
L
t
V = 12 V
ON
t
TRANS-
t
TRANS+
t
V = 15 V
ON
t
V = 15 V
OFF
60
t
V = 12 V
OFF
40
20
- 55 - 35 - 15
5
25
45
65
85 105 125
- 55 - 35 - 15
5
25
45
65
85 105 125
Temperature ( C)
Temperature ( C)
Transition Time vs. Temperature
Switching Time vs. Temperature
140
120
100
80
10
V+ = 12 V
V– = 0 V
- 10
Loss
V
L
= 5 V
t
TRANS-
- 30
- 50
- 70
X
TALK
OIRR
t
TRANS+
60
V+ = 3 V
V– = 0 V
- 90
40
R
L
= 50
20
- 110
- 55 - 35 - 15
5
25
45
65
85 105 125
100 k
1 M
10 M
100 M
1 G
Temperature ( C)
Frequency (Hz)
Insertation Loss, Off -Isolation Crosstalk vs. Frequency
Transition Time vs. Temperature
30
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25
V
= 5 V
L
C = 10 nF
20
15
10
V = 15 V
5
0
V+ = 12 V
- 5
- 10
- 15
- 20
- 25
- 30
- 15 - 12 - 9 - 6 - 3
0
3
6
9
12 15
4
6
8
10
V+ – Supply Voltage (V)
Switching Threshold vs. Supply Voltage
12
14
16
18
20
V
S
– Analog Voltage (V)
Charge Injection vs. Analog Voltage
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Document Number: 72107
S-71009–Rev. C, 14-May-07
DG417B/418B/419B
Vishay Siliconix
TEST CIRCUITS
V
O
is the steady state output with the switch on.
+ 5 V
+ 15 V
3 V
0 V
t < 5 ns
t < 5 ns
f
r
Logic
Input
50 %
V
L
V+
D
S
V
O
10 V
t
OFF
Switch
Input
V
S
IN
GND
V
O
R
300
C
35 pF
L
L
90 %
V–
Switch
Output
0 V
t
ON
- 15 V
C
L
(includes fixture and stray capacitance)
Note: Logic input waveform is inverted for switches that have the
opposite logic sense.
R
L
V
O
= V
S
R
L
+ r
DS(on)
Figure 2. Switching Time (DG417B/418B)
+ 5 V
+ 1 V
V+
Logic
3 V
Input
t < 5 ns
t < 5 ns
f
r
V
L
0 V
S
S
1
D
V
S1
V
O
2
V
S2
V
S1
= V
S2
V
R
300
C
L
35 pF
L
90 %
O
IN
Switch
Output
0 V
V -
GND
t
D
t
D
C
L
(includes fixture and stray capacitance)
- 15 V
Figure 3. Break-Before-Make (DG419B)
+ 5 V
+ 15 V
V
L
V+
3 V
t < 5 ns
r
t < 5 ns
f
Logic
Input
S
D
50 %
1
V
S1
V
O
0 V
S
2
V
S2
t
t
TRANS
TRANS
R
300
C
L
35 pF
L
V
S1
IN
GND
V
01
90 %
V -
Switch
Output
10 %
V
02
V
S2
- 15 V
(includes fixture and stray capacitance)
C
L
R
L
V
O
= V
S
R
L
+ r
DS(on)
Figure 4. Transition Time (DG419B)
Document Number: 72107
S-71009–Rev. C, 14-May-07
www.vishay.com
7
DG417B/418B/419B
Vishay Siliconix
TEST CIRCUITS
+ 5 V
+ 15 V
V
O
V
O
V
L
V+
D
R
g
S
V
O
IN
X
OFF
ON
OFF
IN
GND
C
10 nF
L
3 V
V -
Q =
V x C
O L
- 15 V
Figure 5. Charge Injection
+ 5 V
+ 15 V
C
C
+ 5 V
+ 15 V
C
C
V
V+
D
L
S
S
V
S
1
V
L
V+
V
R
g
= 50
O
S
D
V
S
50
R
g
= 50
V
O
2
R
L
IN
0 V, 2.4 V
R
L
IN
GND
GND
V -
C
V
0.8 V
C
V -
- 15 V
- 15 V
O
Off Isolation = 20 log
V
O
V
S
X
Isolation = 20 log
TALK
V
S
C = RF bypass
Figure 7. Off isolation
Figure 6. Crosstalk
+ 5 V
+ 15 V
V+
C
C
V
L
S
D
V
S
V
O
R
g
= 50
R
L
IN
0 V, 2.4 V
GND
V-
C
- 15 V
Figure 8. Insertion Loss
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Document Number: 72107
S-71009–Rev. C, 14-May-07
DG417B/418B/419B
Vishay Siliconix
TEST CIRCUITS
+ 5 V
+ 15 V
+ 15 V
NC
C
C
C
V
L
V+
S
D
S
S
1
V+
2
DG417B/418B
DG419B
IN
Meter
Meter
0 V, 2.4 V
0 V, 2.4 V
IN
HP4192A
Impedance
Analyzer
HP4192A
Impedance
Analyzer
or Equivalent
or Equivalent
D
2
D
1
GND
V-
GND
f = 1 MHz
f = 1 MHz
V-
C
C
- 15 V
- 15 V
Figure 9. Source/Drain Capacitances
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Tech-
nology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability
data, see http://www.vishay.com/ppg?72107.
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9
Document Number: 72107
S-71009–Rev. C, 14-May-07
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1
相关型号:
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IC 1-CHANNEL, SGL POLE DOUBLE THROW SWITCH, PDSO8, LEAD FREE, MSOP-8, Multiplexer or Switch
VISHAY
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